Collective modes and the periodicity of quantum Hall stripes

We investigate the quantum Hall stripe phase at filling factor 9/2 at the microscopic level by probing the dispersion of its collective modes with the help of surface acoustic waves with wavelengths down to 60 nm. The dispersion is strongly anisotropic. It is highly dispersive and exhibits a roton minimum for wave vectors aligned along the easy transport direction. In the perpendicular direction, however, the dispersion is featureless, although not flat as predicted by theory. Oscillatory behavior in the absorption intensity of the collective mode with a wave vector perpendicular to the stripes is attributed to a commensurability effect. It allows us to extract the periodicity of the quantum Hall stripes.     

Integer and fractional quantum Hall effect in a strip of stripes

We study anisotropic stripe models of interacting electrons in the presence of magnetic fields in the quantum Hall regime with integer and fractional filling factors. The model consists of an infinite strip of finite width that contains periodically arranged stripes (forming supercells) to which the electrons are confined and between which they can hop with associated magnetic phases. The interacting electron system within the one-dimensional stripes are described by Luttinger liquids and shown to give rise to charge and spin density waves that lead to periodic structures within the stripe with a reciprocal wavevector 8k _F in a mean field approximation. This wavevector gives rise to Umklapp scattering and resonant scattering that results in gaps and chiral edge states at all known integer and fractional filling factors ν. The integer and odd denominator filling factors arise for a uniform distribution of stripes, whereas the even denominator filling factors arise for a non-uniform stripe distribution. We focus on the ground state of the system, and identify the quantum Hall regime via the quantized Hall conductance. For this we calculate the Hall conductance via the Streda formula and show that it is given by σ _H = νe ²/h for all filling factors. In addition, we show that the composite fermion picture follows directly from the condition of the resonant Umklapp scattering.     

Quantum Hall effect-insulator transition in the InAs/GaAs system with quantum dots

The InAs/GaAs structures consisting of quantum-dot layers with electronic properties typical of two-dimensional systems are investigated. It is found that, at a low concentration of charge carriers, the variable-range-hopping conductivity is observed at low temperatures. The localization length corresponds to characteristic quantum-dot cluster sizes determined using atomic-force microscopy (AFM). The quantum Hall effect-insulator transition induced by a magnetic field occurs in InAs/GaAs quantum-dot layers with metallic conductivity. The resistivities at the transition point exceed the resistivities characteristic of electrons in heterostructures and quantum wells. This can be explained by the large-scale fluctuations of the potential and, hence, the electron density.     

Quantum Hall effect in noncommutative quantum mechanics

We study the quantum Hall (QH) effect for an electron moving in a plane whose coordinates and momenta are noncommuting under the influence of uniform external magnetic and electric fields. After solving the time independent Schrödinger equation both on a noncommutative space (NCS) and a noncommutative phase space (NCPS), we obtain the energy eigenvalues and eigenfunctions of the relevant Hamiltonian. We derive the electric current whose expectation value gives the QH effect both on a NCS and a NCPS.     

Studies of the quantum Hall to quantum Hall insulator transition in InSb-based 2DESs

The temperature dependence of ρ_xx is studied in the vicinity of the quantum Hall to quantum Hall insulator transition (ν=1→0) in InSb/InAlSb based 2DESs. ρ_xx displays a symmetric temperature dependence about the transition with on the QH side and on the insulating side. A plot of 1/T₀ for successive ν displays power-law divergence with 1/T₀∝|ν−ν_c|^−γ,² with γ=2.2±0.3. This critical behavior in addition to the behavior expected of the quantum transport regime confirms that the QH/QHI transition is indeed a good quantum phase transition.     

On the quantum phase transition of a quantum Hall liquid

It is shown that, in the absence of disorder, a quantum Hall liquid undergoes a second-order quantum phase transition as function of the applied magnetic field. The analysis is carried out in the framework of the Chem-Simons-Ginzburg-Landau theory which is shown to exhibit a nontrivial infrared stable fixed point. The corresponding critical exponents are found to be gaussian, and thus universal and independent of the filling fraction.     

Quantum Hall ferrimagnetism in lateral quantum dot molecules

We demonstrate the existence of ferrimagnetic and ferromagnetic phases in a spin phase diagram of coupled lateral quantum dot molecules in the quantum Hall regime. The spin phase diagram is determined from the Hartree-Fock configuration interaction method as a function of electron number N and magnetic field B. The quantum Hall ferrimagnetic phase corresponds to spatially imbalanced spin droplets resulting from strong interdot coupling of identical dots. The quantum Hall ferromagnetic phases correspond to ferromagnetic coupling of spin polarization at filling factors between nu=2 and nu=1.     

Dynamical scaling of the quantum Hall plateau transition

Using different experimental techniques, we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f=0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa=0.5+/-0.1, yielding a dynamical exponent z=0.9+/-0.2.     

Helical nuclear spin order in a strip of stripes in the quantum Hall regime

We investigate nuclear spin effects in a two-dimensional electron gas in the quantum Hall regime modeled by a weakly coupled array of interacting quantum wires. We show that the presence of hyperfine interaction between electron and nuclear spins in such wires can induce a phase transition, ordering electrons and nuclear spins into a helix in each wire. Electron-electron interaction effects, pronounced within the one-dimensional stripes, boost the transition temperature up to tens to hundreds of millikelvins in GaAs. We predict specific experimental signatures of the existence of nuclear spin order, for instance for the resistivity of the system at transitions between different quantum Hall plateaus.     

Metal insulator transition in modulated quantum Hall systems

The quantum Hall effect is studied numerically in modulated two-dimensional electron systems in the presence of disorder. Based on the scaling property of the Hall conductivity as well as the localization length, the critical energies where the states are extended are identified. We find that the critical energies, which are distributed to each of the subbands, combine into one when the disorder becomes strong, in the way depending on the symmetry of the disorder and/or the periodic potential.     

Hall micromagnetometry of domain-wall depinning in Permalloy nanowires

Experimental results of field-induced domain-wall depinning in Permalloy nanowires of submicron width and thicknesses between 10 and 30 nm are presented. Single domain walls pinned at notches in nanowires are detected by Hall micromagnetometry. The technique allows to study domain-wall propagation and depinning non-invasively in the temperature range between 2 and 50 K. The influence of sample thickness on domain-wall propagation properties is investigated. In nanowires with two notches of different pinning strength single domain walls are pinned in a toggle mode. The temperature dependence of domain-wall depinning fields in two-notch wires is analyzed.     

Quantum Hall ferromagnetism in a two-valley strained Si quantum well

Tilted field magnetotransport study was performed in a two-valley strained Si quantum well and hysteretic diagonal resistance spikes were observed near the coincidence angles. The spike around filling factor ν=3 develops into a giant feature when it moves to the high-field edge of the quantum Hall (QH) state and quenches for higher tilt angles. When the spike is most prominent, its peak resistance is temperature independent from T20 mK up to 0.3 K, which is different from the critical behavior previously reported near the Curie temperature of the QH ferromagnet in AlAs quantum wells. Our data suggest a strong interplay between spins and valleys near the coincidence.     

Temperature scaling of quantum Hall plateau transition in bilayer systems

We have investigated the scaling behavior of the quantum Hall plateau transition in double quantum well systems with different interlayer tunneling strengths. The scaling behavior of the localization property is found to be similar between the case when the relevant Landau level (LL) is non-degenerate and the case when two LLs associated with the two layers are accidentally degenerate. In both cases, the scaling exponent κ0.4 close to the canonical value is obtained, and it is unaffected by the in-plane magnetic field which changes the interlayer tunneling strength.     

Quantum field-theory description of tunneling in the integer quantum Hall effect

We study the tunneling between two quantum Hall systems, along a quasi one-dimensional interface. A detailed analysis relates microscopic parameters, characterizing the potential barrier, with the effective field-theory model for the tunneling. It is shown that the phenomenon of fermion number fractionalization is expected to occur, either localized in conveniently modulated barriers or in the form of free excitations, once lattice effects are taken into account. This opens the experimental possibility of an observation of fractional charges with internal structure, close to the magnetic length scale. The coupling of the system to external gauge fields is performed, leading us to the exact quantization of the Hall conductivity at the interface. The field-theory approach is well supported by a numerical diagonalization of the microscopic hamiltonian.     

Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures

The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number C_s for energy-bands of trilayer graphene having the essence of intrinsic spin–orbit coupling is analytically calculated. We find that for each valley and spin, C_s is three times larger in trilayer graphene as compared to single layer graphene. Since the spin Chern-number corresponds to the number of edge states,consequently the trilayer graphene has edge states, three times more in comparison to single layer graphene. We also study the trilayer graphene in the presence of both electric-field and intrinsic spin–orbit coupling and investigate that the trilayer graphene goes through a phase transition from a quantum spin Hall state to a quantum valley Hall state when the strength of the electric field exceeds the intrinsic spin coupling strength. The robustness of the associated topological bulk-state of the trilayer graphene is evaluated by adding various perturbations such as Rashba spin–orbit(RSO) interaction αR, and exchange-magnetization M. In addition, we consider a theoretical model, where only one of the outer layers in trilayer graphene has the essence of intrinsic spin–orbit coupling, while the other two layers have zero intrinsic spin–orbit coupling.Although the first Chern number is non-zero for individual valleys of trilayer graphene in this model, however, we find that the system cannot be regarded as a topological insulator because the system as a whole is not gaped.