Electro-optical properties of doped anthracene films

Electroluminescence in anthracene doped with anthraquinone (10^?3 mole%) films are presented. Films are deposited at room temperature in a vacuum of 10^?5 torr. It is observed that at constant frequency the brightness/voltage relationship follows the relation $\text{B = B}{}_0\text{exp}\text{(?b/V}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{)}$. The results show that electroluminescent brightness increases linearly with frequency. At lower frequencies green electroluminescent (EL) emission and at higher frequencies blue EL emission is observed. Similar nature for I–V and brightness/voltage relationship are found in anthracene doped with 10^?4 mole% anthraquinone.     

Efficient and stable single-dopant white OLEDs based on 9,10-bis (2-naphthyl) anthracene

Efficient white organic light-emitting diodes (WOLEDs) are fabricated with a thin layer of 9,10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene as the source of white emission. A device with the structure of ITO/NPB (70 nm)/ADN: 0.5% Rubrene (30 nm)/Alq₃ (50 nm)/MgAg shows a maximum current efficiency of 3.7 cd/A, with the CIE coordinates of x=0.33, y=0.43. The EL spectrum of the devices and the CIE coordinates remains almost the same when the voltage is increased from 10 to 15 V and the current efficiency remains quite stable with the current density increased from 20 to 250 mA/cm².     

Electroluminescence,photoluminescence and electroabsorption of a lightly substituted anthracene langmuir film

Optical data are presented for a novel thin film structure based on anthracene. Thin films of the 9-butyl–10-anthryl propionic acid derivative were prepared using the Langmuir-Blodgett technique. By applying electric fields in excess of 10⁶ V cm^?1 both electroabsorption and electroluminescence results have been obtained. The electroluminescence spectrum exhibits a shoulder at the wavelength where the maximum in the fluorescence spectrum occurs.     

A non-self-consistent electron-beam controlled discharge in methane

The use of methane in a non-self-consistent discharge controlled by an electron beam permits obtaining high discharge currents for relatively low electric fields. The current gain is 10³for 500 V/cm fields and a 14 mA/cm² injection current density. For fields greater than 7–8 kV/cm and atmospheric pressure, punch-through of the gas discharge gap occurs. It is shown that a breakpoint in the CVC in the area of low currents is associated with the appearance of spots on the cathode. A domain Instability, related to the nonmonotonic dependence of the drift velocity on the reduced field in methane, is detected.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 65–68, April, 1982.     

488 nm连续激光晶化本征非晶硅薄膜的喇曼光谱研究

利用等离子增强化学气相沉积系统制备了本征非晶硅薄膜,并选用488 nm波长的连续激光进行晶化.采用喇曼测试技术对本征非晶硅薄膜在不同激光功率密度和扫描时间下的晶化状态进行了表征,并用514 nm波长与488 nm波长对样品的晶化效果进行了比较.测试结果显示:激光照射时间60 s, 激光功率密度在1.57×10⁵ W/cm²时,能实现非晶硅向多晶硅的转变,在功率密度达到2.7 56×10⁵ W/cm²时,有非晶开始向单晶转变,随着激光功率密度的继续增加,晶化结果仍为单晶;在功率密度为2.362×10⁵ W/cm²下,60 s照射时间晶化效果较好;在功率密度为2.756×10⁵ W/cm²和照射时间为60 s的条件下,用488 nm波长比514 nm波长的激光晶化本征非晶硅薄膜效果较好,并均为单晶态.     

Electric-field dependent electron mobility in anthracene single crystals

We observed the electric-field dependence of electron drift velocity in the c′ direction of anthracene single crystals at low temperature and found out that it tends to almost constant value above the electric-field of 1.8 × 10⁵ V cm^-1 at 140 K deviating from the linear proportionality to the field below this value. This result may be regarded as an experimental verification for the recent theoretical prediction by Sumi.     

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm² and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm² were achieved. We obtained luminance of 5993 cd/m² when current density was 140 mA/cm². The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength.     

Effect of high electric field on the dc conduction of TeO2-V2O5-MoO3 amorphous bulk material

Effect of high electric field on the dc conductivity of TeO₂-V₂O₅-MoO₃ amorphous bulk samples with different molar ratio of each component was investigated with gap-type electrode arrangement. At low electric fields, the current-voltage (I–V) characteristics has a linear shape, while at high electric fields (>10³ V/cm), bulk samples show nonlinear behavior (nonohmic conduction) and current-voltage characteristics shows increasing deviation from Ohm’s law with increasing current density. High-field effect of Pool-Frenkel type was observed at electrical fields about 10³−10⁴ V/cm. In addition, positive deviation from Pool-Frenkel effect was observed when a field higher than about 10⁴ V/cm was applied.     

PL and EL characterizations of ZnO:Eu, Li films derived by sol-gel process

ZnO:Eu³⁺, Li⁺ films prepared by the dip-coating method were characterized by photoluminescence (PL) and electroluminescence (EL). When the ZnO:Eu³⁺, Li⁺ films were excited using UV light with energy corresponding to the band-to-band excitation of the host matrix, the PL spectra showed emissions from both ZnO and Eu³⁺ ions, while their EL spectra showed emissions only from Eu³⁺ ions, and no emission from ZnO could be detected. It is found that the EL emission intensity B is dependent on the applied voltage, B=B_o exp(−bV^−1/2). With increasing frequency, the EL intensity dramatically increases at lower frequencies (<1000 Hz), and then increases gradually at higher frequencies (>1000 Hz).     

Improved electrical and interfacial properties of RF-sputtered HfAlOx on n-GaAs with effective Si passivation

In this paper, we present the effects of ultrathin Si interfacial layer on the physical and electrical properties of GaAs MOS capacitors fabricated using RF-sputtered HfAlO_x gate dielectric. It is found that HfAlO_x/Si/n-GaAs stack exhibits excellent electrical properties with low frequency dispersion (∼4.8%), hysteresis voltage (0.27 V) and interface trap density (1.3 × 10¹² eV⁻¹ cm⁻²). The current density of 3.7 × 10⁻⁵ A/cm² is achieved with an equivalent-oxide-thickness of 1.8 nm at V_FB + 1 V for Si-passivated HfAlO_x films on n-GaAs. X-ray photoelectron spectroscopy (XPS) analysis shows that the suppression of low-k interfacial layer formation is accomplished with the introduction of ultrathin Si interface control layer (ICL). Thus the introduction of thin layer of Si between HfAlO_x dielectrics and GaAs substrate is an effective way to improve the interface quality such as low frequency dispersion, hysteresis voltage and leakage current. Additionally, current conduction mechanism has been studied and the dominant conduction mechanisms are found to be Schottky emission at low to medium electric fields and Poole-Frenkel at high fields and high temperatures under substrate injection. In case of gate injection, the main current conduction at low field is found to be the Schottky emission at high temperatures.     

Electrical properties of highly (111)-oriented lead zirconate thin films

Antiferroelectric PbZrO₃ thin films were grown on Pt/Ti/SiO₂/Si substrates with predominant (111) orientation using a sol-gel process. The Pt/PbZrO₃/Pt film capacitor showed well-saturated hysteresis loops at an applied voltage of 5 V with remanent polarisation (P_r) and coercive electric field (E_c) values of 8.97 μC/cm² and 162 kV/cm, respectively. The leakage current density of the highly (111)-oriented PbZrO₃ film was less than 1.0×10⁻⁷ A/cm² over electric field ranges from 0 to 105 kV/cm. The conduction current depended on the voltage polarity. The PbZrO₃/Pt interface forms a Schottky barrier at electric fields from 20 to 160 kV/cm. The dielectric relaxation current behaviour of Pt/PbZrO₃/Pt capacitor obeys the well-known Curie-Von Schweidler law at electric field of 20-80 kV/cm, the currents have contributions of both dielectric relaxation current and leakage current.     

Space-charge-limited-trap-limited-currents in anthracene crystals

Space-charge-limited-trap-limited hole currents in anthracene crystals are interpreted in terms of a trap distribution which starts at a discrete trap level at 0·6–0·8 eV and in which the trap density falls off exponentially with energy relative to this level. It is suggested that exponential hole trap distributions are produced by physical perturbations of the crystal lattice introduced by the same impurities which give rise to the discrete hole trap level at 0·6–0·8 eV (revealed by thermally stimulated current studies). The results indicate that a perturbed molecule is introduced for every 10,000 impurity molecules and the total number of perturbed molecules is constant at 10¹⁷ m^?3 for melt-grown and vapor-grown crystals. The parameter kT_c varies from crystal to crystal, indicating that the relative contributions of highly perturbed and slightly perturbed molecules is influenced by crystal growth conditions.     

On low-field electron emission mechanisms

It is established by direct experiments that the main component of the stationary field-emission current in fields E<10⁵ V/cm is due to piezogeometric intensification (by a factor of 10³) of the electricfield at the end faces of piezoelectrically active films. An emission mechanism governed by electrons supplied by tunneling from the valence band of the piezoelectric is proposed. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 11, 823–827 (10 June 1997)     

高直流电场下PET薄膜的电致发光及其可靠性

用自制电致发光(Electrolum inescence-EL)测量装置测试了直流高电场下聚对苯二甲酸乙二酯[poly(ethylene terephthalate)-PET]薄膜EL的光强和光谱。实验表明:PET的发光光强随所加电场而增大,在4.00MV/cm附近发生预击穿。EL光谱在300~400nm、400~460nm、500~600nm和680nm附近存在发射峰,其中500~600nm峰带相对较强,预击穿信号出现后680nm附近的峰带增加很快。为了评价PET的介电性能,本文对实验数据用双参数Weibull分布解析法计算,得出了该薄膜在(24±1)℃,阶跃加压条件下的寿命和击穿电场的累积失效概率和可靠度方程,Weibull假设检验结果表明,实验结果服从Weibull分布。     

Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells

Electroluminescence (EL) spectra of blue InGaN/GaN multiple-quantum-well light-emitting diode (LED) have been investigated over a wide range of injection current (0.001–200 mA) and at various temperatures (6–300 K). Surprisingly, with increasing the injection current the EL peak energy shows an initial blueshift accompanied by a broadening of the EL linewidth at low temperatures (below 30 K). This trend differs from the usual photoluminescence (PL) measurement results, which have shown that with increasing the optical excitation power the PL peak energy gave an initial blueshift accompanied by a narrowing of the PL linewidth at low temperatures. The anomalous current behavior of the EL spectra may be attributed to electron leakage results in the failure of Coulomb screening effect and the relative enhancement of the low-energetic localized state filling at low temperatures and low currents. The electron leakage for the LED is further confirmed by both the current dependence of the EL intensity and the temperature dependence of the EL efficiency.     

Pool-Frenkel effect and high frequency dielectric constant determination of semiconducting P2O5-Li2MoO4-Li2O and P2O5-Na2MoO4-Na2O bulk glasses

The ternary 70P₂O₅-10Li₂MoO₄-20Li₂O and 70P₂O₅-10Na₂MoO₄-20Na₂O glasses, prepared by the press-melt quenching technique, were studied at temperatures between 298 and 418 K for their high dc electric field properties. For the above purpose, the effect of a strong electric field on the dc conduction of these amorphous bulk samples was investigated using the gap-type electrode configuration. At low electric fields, the current-voltage (I — V) characteristics have a linear shape, while at high electric fields (> 10³ V/cm), bulk samples show nonlinear effects (nonohmic conduction). Current-voltage curves show increasing departure from Ohm’s law with increasing current density, leading to critical phenomena at a maximum voltage (threshold voltage), known as switching (switch from a low-conduction state to a higher-conduction state at threshold voltage). The Pool-Frenkel high-field effect was observed at electrical fields of about 10³–10⁴ V/cm; then the lowering factor of the potential barrier, the high frequency dielectric constant, and the refractive index of these glasses were determined.      

Non-Ohmic conduction in polydiacetylene thin films

We have studied the current–voltage (I–V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300–1.7 K. It was found that at electric fields higher than 2 × 10⁴ V/cm, the I–V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.     

High‐performance In–Zn–O thin‐film transistors with a soluble processed ZrO2 gate insulator

Spin‐coated zirconium oxide films were used as a gate dielectric for low‐voltage, high performance indium zinc oxide (IZO) thin‐film transistors (TFTs). The ZrO₂ films annealed at 400 °C showed a low gate leakage current density of 2 × 10^–8 A/cm² at an electric field of 2 MV/cm. This was attributed to the low impurity content and high crystalline quality. Therefore, the IZO TFTs with a soluble ZrO₂ gate insulator exhibited a high field effect mobility of 23.4 cm²/V s, excellent subthreshold gate swing of 70 mV/decade and a reasonable I_on/off ratio of ～10⁶. These TFTs operated at low voltages (～3.0 V) and showed high drain current drive capability, enabling oxide TFTs with a soluble processed high‐k dielectric for use in backplane electronics for low‐power mobile display applications. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Preparation of fluorocarbon thin film deposited by soft X-ray ablation and its electrical characteristics and thermal stability

Fluorocarbon films were deposited by soft X-ray ablation of polytetrafluoroethylene (PTFE) and characterized as low-dielectric-constant interlayer dielectrics. Very rapid deposition of such films at approximately 1500 nm/min could be achieved at room temperature. Fourier-transform infrared spectroscopy (FT-IR) measurement results suggest that the films deposited are primarily formed as one-dimensional chains of (-CF₂-)_n which are partially cross-linked. The cross-link density increases with increasing deposition temperature, which improves the thermal stability. However, the dielectric constant of the films increased abruptly above 300 °C. The dielectric constant and leakage current at 1.0 MV/cm of the film deposited at room temperature were approximately 2.1 and 2.0×10⁻⁹ A/cm², respectively.     

Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

This work is a comparative study of the processes of charge trapping in silicon dioxide layers doped with different rare-earth (RE) impurities (Gd, Tb, Er) as well as with Ge. Diode SiO₂-Si structures incorporating such oxide layers exhibit efficient electroluminescence (EL) in the spectral range of UV to IR. Ion implantation was performed over a wide dose range with the implant profiles peaking in the middle of the oxide. Charge trapping was studied using an electron injection technique in constant current regime with simultaneous measurements of the EL intensity (ELI). High-frequency C/V characteristics were used to monitor the net charge in the oxides.Analysis of the charge trapping and the variation of the EL intensity during electron injection shows that the current density range can be divided in three portions: (i) low injection level, where electron/hole capture at traps with large capture cross-sections and low ELI occurs; (ii) medium injection level corresponding to the main operation mode of the devices (odd hole trapping depending on the injected current level is observed); and (iii) high injection level (electrical quenching of the EL that correlates with electron capture at traps of extremely small capture cross-sections takes place). The nature of specific hole trapping at the medium injection level in RE-doped devices is discussed. Mechanisms of EL quenching at the high injection level are proposed.