Soft Magnetism and High Frequency Properties of Fe65Co35-MgF2 Granular Thin Films

（Fe65 Co35 ）x （MgF2 ）1-x films with different metal volume fraction x are fabricated by magnetron sputtering. The results reveal that good soft magnetic properties can be obtained in a very wide x range （0.9 〉 x 〉 0.55） with Hc not exceeding 10 Oe, and high resistivity is also realized for the samples. Especially for the sample with x = 0.75, the coercivity in hard and easy axes is 1.6 Oe and 8.5 Oe, respectively, 4πMs = 14.1 kG and p reaches 1.16 mΩ2.cm. The dependence of complex permeability μ =μ′ - jμ″ on frequency shows that the real part μ′is more than 190 below 2.0 GHz and ferromagnetic resonance frequency fr reaches 2.43 GHz, implying that the film is promising for high frequency applications. High resolution transmission electron micrographs show that the films consists of bcc Fe65 Co35 particles embedded uniformly in an amorphous insulating MgF2 matrix with particle size around a few nanometers. The excellent soft magnetic properties and high frequency properties are ascribed to exchange of coupling among magnetic granules, and the exchange coupling variation in a wide x range （0.9 〉 x 〉 0.55） is studied systematically by △M plots.     

High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites

The high-temperature dielectric properties of SiO₂/Si₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO_2/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.     

Exchange coupling and remanence enhancement in nanocomposite Nd–Fe–B/FeCo multilayer films

Nd–Fe–B-type hard phase single layer films and nanocomposite Nd₂₈Fe₆₆B₆/Fe₅₀Co₅₀ multilayer films with Mo underlayers and overlayers have been fabricated on Si substrates by rf sputtering. The hysteresis loops of all films indicated simple single loops for fixed Nd–Fe–B layer thickness (10 nm) and different FeCo layer thickness (d_FeCo=1–50 nm). The remanence of these films is found to increase with increasing d_FeCo and the coercivity decrease with increasing d_FeCo. It is shown that high remanence is achieved in the nanocomposite multilayer films consisting of the hard magnetic Nd–Fe–B-type phase and soft magnetic phase FeCo with 20 nm?d_FeCo?3 nm. The sample of maximum energy product is 27 MG Oe for d_FeCo=5 nm at room temperature. The enhancement of the remanence and energy products in nanocomposite multilayer films is attributed to the exchange coupling between the magnetically soft and hard phases.     

Effects of Interfacial Polarization on Voltage Tunability of Pb(Fe1/2Nb1/2)1-xTixO3 Single Crystals

The voltage tunability of Pb(Fe_1/2Nb_1/2)_1-xTi_xO₃ single crystals is investigated at a low electric field (<130 V/cm) in a low frequency range (<1 MHz). The results show that the capacitance is strongly suppressed by the applied dc biases for both the rhombohedral sample and the tetragonal sample. A negative voltage tunability is only detected in the tetragonal sample. The origin of the giant tunability and the negative tunability is discussed based on the multipolarization-mechanism model and the equivalent circuit model, respectively. It is ascribed to the interfacial polarization at the interface of electrode/sample.     

Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.     

Electromechanical properties and dielectric behavior of (Bi1/2Na1/2)(1−1.5x)BixTiO3 lead-free piezoelectric ceramics

Bismuth doped bismuth sodium titanate ceramics [(Bi_1/2Na_1/2)_(1−1.5x)Bi_xTiO₃, x=0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm² and a relatively low coercive field of 71 kV/cm, while their d₃₃ and k_p reach a maximum value of 95 pC/N and 21%, respectively.     

Dielectric characteristics and polarization response of lead-free ferroelectric (Bi0.5Na0.5)0.94Ba0.06TiO3-P(VDF-TrFE) 0-3 composites

Bismuth sodium barium titanate/poly(vinylidene fluoride-trifluoroethylene) 70/30 [(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃-P(VDF-TrFE)] 0-3 composites were prepared by a hot-press method for different volume fractions of (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ ceramic powder in a P(VDF-TrFE) 70/30 copolymer matrix. The relative permittivity and dielectric loss of the composites increased with increase in the volume fraction of the ceramics, which well follows the Bruggeman model. The polarization responses of the composites were strongly dependent on the ceramic volume fraction. The composites with a higher ceramic volume fraction showed an increase in remanent polarization. At room temperature, a 0.3(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃-0.7P(VDF-TrFE) composite showed a relative permittivity ε_r=30, remanent polarization and coercive field      

Laser Molecular Beam Epitaxy of Multilayer Heterostructure SrNb0.05Ti0.95O3/La0.9Sr0.1MnO3 in 10000 Unit-Cell Layers

Ten thousands of unit-cell multilayer heterosturctures, [SrNb0.05 Ti0.95O3/La0.9 Sr0.1MnO3]3 （SNTO/LSMO）, have been epitaxial grown on SrTiO3 （001） substrates by laser molecular beam epitaxy. The monitor of insitu. reflection high-energy electron diffraction demonstrates that the heterosturctures are layer-by-layer epitaxial growth. Atomic force microscope observation indicates that the surface of the heterosturcture is atomically smooth. The measurements of cross-sectional low magnification and high-resolution transmission electron microscopy as well as the corresponding selected area electron diffraction reveal that the interfaces are of perfect orientation, and the epitaxial crystalline structure shows the orientation relation of SNTO（001）//LSMO（001）, and SNTO[100]//LSMO[100].     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Magnetic properties and magneto electric effect in ferroelectric rich Ni0.5Zn0.5Fe2O4+BPZT ME composites

Magneto electric composites with composition (x) Ni_0.5Zn_0.5Fe₂O₄+(1-x) Ba_0.8Pb_0.2Zr_0.8Ti_0.2O₃ (BPZT—barium lead zirconate titanate) in which x varies as 0.0, 0.15, 0.30, 0.45 and 1.0 mol% were prepared by standard double sintering ceramic method. The presence of constituent phases such as ferrite and ferroelectric was confirmed by X-ray diffraction. The structural analyses were carried out by using X-ray diffraction pattern. Scanning electron micrographs (SEM) were taken to understand the microstructure of the samples. The calculated values of the porosity of the samples lie between 4.5% and 16.2%. The hysteresis measurements were made to determine saturation magnetization (M_s), magnetic moment (μ_B) and coercivity (H_c). From the AC susceptibility measurements the contribution of both the single domain (SD) particles of the ferrite phase and mixed domain (SD+MD) particles of the composites in ME output were explained. The static magneto electric voltage coefficients (dE/dH)_H were measured as a function of intensity of magnetic field and the maximum ME coefficient were observed for the composites with 30% of ferrite+70% of ferroelectric phase.     

Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Maxwell-Wagner characterization of dielectric relaxation in Ni0.8Zn0.2Fe2O4/Sr0.5Ba0.5Nb2O6 composite

Dense composites were prepared through incorporating the dispersed Ni_0.8Zn_0.2Fe₂O₄ ferromagnetic particles into Sr_0.5Ba_0.5Nb₂O₆ ferroelectric matrix. Extrinsic dielectric relaxation and associated high permittivities of the materials are reported in the composites. We used an ideal equivalent circuit to explain electrical responses in impedance formalism. A Debye-like relaxation in the permittivity formalism was also found. Interestingly, real permittivity (ε′) of the sample containing 30% Ni_0.8Zn_0.2Fe₂O₄ shows obvious independence of the temperature at 100 kHz. Dielectric relaxation and high-ε′ properties of the composites are explained in terms of the Maxwell-Wagner (MW) polarization model.     

Fabrication and Characterization of SmCo5/Fe65Co35 and SmCo5/Fe Composite Spring Exchange Magnets

SmCo5/Fe65Co35 and SmCo5/Fe spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates and 100-nm-thick Si3N4 membranes, respectively. The base pressure of sputtering chamber is kept below 10^-7 Tort, and Ar pressure is 3 to 8mTorr. The samples are characterized by an x-ray diffractometer, a superconducting quantum interference magnetometer, and high resolution magnetic soft x-ray microscopy. We obtain the complete exchange coupling and single phase behaviour of composite magnets. The （BH）max value achieved is 28.8 MGOe.     

Photoluminescence investigations on the nanoscale phase transition in Pb(Mg1/3Nb2/3)O3

The temperature dependence of the photoluminescence spectra of the relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O₃ has been reported. The temperature behaviours of the 1.57, 1.67 and 1.73 eV bands indicate a phase transition at 110 K. This is attributed to a structural phase transition in the charged nanoshell. Analysis of the temperature dependence of 1.67 eV band intensity with a thermal quenching model indicated the existence of a phonon mode at 1153 cm⁻¹. This mode is identified in the Raman spectra measurement. The intensity of the 1.73 eV band showing an anomalous behaviour at 210 K is attributed to a transition from a crystalline phase to an amorphous phase in the charged nanoshell.     

Domain observation and transition from giant magnetoresistance to anisotropy magnetoresistance in Ag1−x(Ni0.8Co0.2)x granular films

A series of Ag_1−x(Ni_0.8Co_0.2)_x granular film samples were prepared using an ion-beam cosputtering technique. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were performed to investigate the microstructure of these samples. The results measured using a vibrating sample magnetometer (VSM) show a gradual change from superparamagnetism to ferromagnetism as x increases in these samples. Magnetoresistance was measured using a conventional four terminal method at room temperature. As x increases, a transition from giant magnetoresistance (GMR) to anisotropic magnetoresistance (AMR) has been observed. The stripe-type domains have been observed using magnetic force microscopy (MFM) in the high x samples, and the domains gradually disappear as x decreases. It suggests that the transition from GMR to AMR may result from intergranular interaction (not only dipolar) in the samples as x increases.     

Effects of Li Substitution and Sintering Temperature on Properties of Bi0.5（Na,K）0.5TiO3 Lead-Free Piezoelectric Ceramics

Bi0.5 （Na0.72K0.28- x Lix ）0.5 TiO3 （BNKLT- 100x） lead-free piezoelectric ceramics are synthesized by conventional solid state sintering techniques. The dielectric and piezoelectric properties of the BNKLT-100x ceramics as a function of Li content are systematically investigated. It is found that not only Li content but also the sintering temperature has a strong effect on the piezoelectric properties of BNKLT. The piezoelectric constant d33 Of BNKLT varies from 120 to 252pC/N in the Li content range from 0.03 to 0.16. In the sintering temperature range from 1080 to 1130℃, the d33 value of BNKLT-6 changes from 200pC/N to 252pC/N. The BNKLT-6 sample sintered at 1100℃ has the highest piezoelectric constant d33 of 252pC/N, with the electromechanical coupling factors kp of 0.32 and kt of 0.44.     

An All-Thin-Film Electrochromic Device Composed of MoO3--LiBSO--NiOx Multilayer Structure

An all-thin-tilm （ATF） electrochromic device for modulating the optical transmittance is manufactured using magnetron sputtering. The devices consists of MoO3 as the main electrochromic layer, LiBO2 ＋Li2SO4 （LiBSO） as the ion conductor layer, and NiOx as the complementary electrochromic layer. Glass covered with indium tin oxide （ITO） is used as the substrate and the ITO film is used as the bottom electrode. The ITO film deposited on the top of the devices is used as the other electrode. The structure and morphology of the films are characterized by x-ray diffraction （XRD） and scanning electron microscopy （SEM）. The devices exhibit good optical properties with low transmittance values in the coloured state, and the optical modulation is measured by spectrophotometer in the wavelength range from 400 to 800nm. The average visible light transmittance reaches 50.2% and 3.7% in bleached and coloured state, respectively. The results indicate that such a monolithic system has great potential to be applied in smart windows.     

Dielectric and Ferroelectric Properties of La-Doped SrBi2Nb2O9 Ceramics

Sr1-xLa2x/3Bi2Nb20O （0 ≤ x ≤0.2） ceramic samples are prepared by the solid-state reaction method. Their structure, dielectric and ferroelectric properties are investigated. The incorporation of La^3＋ improves the den- sification and decreases the grain size of the ceramics without changing the crystal structure. The remanent polarization 2PT increases with increasing La content and reaches a maximum value of 22.8μC/cm^2 at x = 0.125, which is approximately 60% larger than that of pure SrBi2Nb2O9. The Curie temperature keeps almost unchanged at a value of about 440℃. The relationship between doping and the ferroeleetrie and dielectric properties are discussed.     

Magnetic interface polarization of the La-5d states in Fe/LaHx multilayers

For rare-earth (RE)-hydrides (REHx), a metal-to-insulator transition is observed if the hydrogen concentration is increased from the dihydride (x=2) towards the trihydride (x=3). This transition provides an object for studies of the magnetic interface polarization in layered ferromagnet/insulator structures. For different samples with a fixed Fe and varied LaH_x sublayer thickness t_LaHx ([15 ? Fe/t? LaH_x]xn), the H concentration x in the LaH_x sublayer is gradually increased in the experiment. Starting from the as prepared dihydride REH_2-δ, the modification of the magnetic polarization of the La-5d states at the Fe/La_x interface is studied across the transition by magnetic circular dichroism measurements at the La-L₂ and L₃ edges. The experiments reveal an induced magnetic polarization of the La-5d hole states on a length scale of 9 ? that is independent of the altered electronic structure of the La-5d states. Received: 23 May 2001 / Accepted: 4 July 2001 / Published online: 5 October 2001     

A study of the effect of ZrO2 on the magnetic properties of FePt/ZrO2 multilayer

Fe_xPt_100−x(30 nm) and [Fe_xPt_100−x(3 nm)/ZrO₂]₁₀ (x = 37, 48, 57, 63, 69) films with different ZrO₂ content were prepared by RF magnetron sputtering technique, then were annealed at 550 °C for 30 min. This work investigates the effect of ZrO₂ doping on the microstructural evolution, magnetic properties, grain size, as well as the ordering kinetics of FePt alloy films. The as-deposited films behaved a disordered state, and the ordered L1₀ structure was obtained by post-annealing. The magnetic properties of the films are changed from soft magnetism to hard magnetism after annealing. The variation of the largest coercivities of [Fe_xPt_100−x/ZrO₂]₁₀ films with the Fe atomic percentage, x and differing amounts of ZrO₂ content reveals that as we increase the ZrO₂ content we must correspondingly increase the amount of Fe. This phenomenon suggests that the Zr or O atoms of ZrO₂ preferentially react with the Fe atoms of FePt alloy to form compounds. In addition, introducing the nonmagnetic ZrO₂ can reduce the intergrain exchange interactions of the FePt/ZrO₂ films, and the interactions are decreased as the ZrO₂ content increases, the dipole interactions are observed in FePt/ZrO₂ films as the ZrO₂ content is more than 15%.