Synthesis and characterization of ZnxHg1?xSeyS1?y quantum dots

This article describes the synthesis of highly water-soluble Zn _x Hg_1−x Se _y S_1−y quantum dots (QDs) in aqueous solution through a simple photo-assisted reaction between ZnSe QDs and mercury(I) nitrate dihydrate [Hg₂(NO₃)₂·2H₂O]. In order to deduce the optimal synthesis conditions, we varied several parameters, including the concentrations of mercaptosuccinic acid (MSA) and Hg₂(NO₃)₂·2H₂O, the illumination time, and the reaction temperature. When irradiated at temperatures below 80 °C, the ZnSe QDs reacted with the S²⁻ ions formed rapidly from MSA and the Hg²⁺ ions formed from Hg₂ ²⁺ ions to form Zn _x Hg_1−x Se _y S_1−y QDs through a process of photo-etching and surface combination. Under different conditions, we prepared a series of Zn _x Hg_1−x Se _y S_1−y QDs that emit fluorescence at the maximum wavelengths ranging from 405 to 760 nm. Inductively coupled plasma-mass spectrometry and transmission electron microscopy/energy dispersive spectrometry revealed that the content of Hg in the Zn _x Hg_1−x Se _y S_1−y QDs was greater when the synthesis was conducted at higher temperature. The Zn_0.88Hg_0.12Se_0.44S_0.56 QDs exhibit improved photostability than crude ZnSe QDs and possess long lifetimes (τ₁ ~ 38 ns and τ₂ ~ 158 ns).     

Crystal structure and electrical properties of GdxMn1 ? xS and TixMn1 ? xSe solid solutions

Regions of the existence of sulfide Gd _x Mn_{1 − x} S and selenide Ti _x Mn_{1 − x} Se solid solutions have been identified. Their electrical and thermoelectric properties have been studied in the temperature range 80–900 K. It has been established that the substitution of Gd²⁺ and Ti²⁺ ions for Mn²⁺ cations initiates reversal of the type of charge carrier with respect to the starting compounds MnS and MnSe. The cation substitution in solid solutions brings about a change from the hole conduction (α > 0) characteristic of the manganese monosulfide and monoselenide to the electronic conduction (α < 0).     

Thermal conductivity of single crystals of Ca1 ? xErxF2 + x and Ca1 ? xTmxF2 + x solid solutions

The thermal conductivity of single crystals of Ca_{1 − x} Er _x F_{2 + x} (x = 0.01, 0.05, 0.07, and 0.10) and Ca_{1 − x} Tm _x F_{2 + x} (x = 0.02, 0.04, and 0.06) solid solutions is studied in the temperature ranges 50–300 and 298–673 K. With increasing content of rare-earth elements, the behavior of thermal conductivity in these solid solutions changes from the characteristic of defect single crystals to glasslike. The concentration dependences of thermal conductivity for the two systems differ insignificantly.     

Effect of the spin and valence states of cobalt ions on the kinetic properties of Ho1 ? xSrxCoO3 ? δ and Er1 ? xSrxCoO3 ? δ compounds

The electrical conductivity and Seebeck effect in ceramics based on cobaltites Ho_{1 − x} Sr _x CoO_{3 − δ} (x = 0.65, 0.75, 0.85, 0.95) and Er_{1 − x} Sr _x CoO_{3 − δ} (x = 0.75, 0.85, 0.95) with a perovskite-like structure have been investigated in the temperature range T > 77 K. All the compounds under study are characterized by the variable-range-hopping conductivity with the temperature dependence of the electrical resistivity corresponding to the Mott law. It has been found that, in the Ho_0.35Sr_0.65CoO_{3 − δ} compound, thermally excited Co³⁺ ions contribute to the electrical conductivity with an increase in temperature to 250 K. The Seebeck coefficient of the systems studied decreases as the strontium concentration and temperature increase. It has been shown that, for an adequate explanation of this behavior, proper allowance must be made for the splitting of the 3d levels, as well as for the charge disproportionation of the cobalt ions.     

Charge state of manganese ions and the nonstoichiometry of Ca1 ? xLayMnO3 ? δ single crystals

The charge states and effective spins of manganese ions in nonstoichiometric single crystals of Ca_{1 − x} La _y MnO_{3 − δ} (x = 0, 0.05, 1) manganites have been determined from the exchange splitting of Mn 3s X-ray photoelectron spectra. The chemical composition of the manganite samples under investigation, including the concentration of oxygen, has been determined using the data of the X-ray microanalysis of cations. It has been found that the manganite single crystals under investigation have large defectiveness in both the cation and oxygen sublattices. The efficiency of the complex use of 3s photoelectron spectroscopy and X-ray microanalysis in the determination of the charge state of manganese ions and violations of stoichiometry in doped and defected manganites has been demonstrated.     

M?ssbauer study of compounds of Cu3 ? xFexSnS4 and Cu2Fe1 ?xZnxSnS4 systems

A M?ssbauer study of the structural and charge states of ⁵⁷Fe and ¹¹⁹Sn atoms in the compounds of Cu_{3 −x} Fe _x SnS₄ and Cu₂Fe_{1 − x} Zn _x SnS₄ systems was performed. It was shown that the iron atoms in the compounds of both systems were in the divalent and trivalent states occupying the tetrahedral positions of the structure. The character of the changes of the degree of covalency of the Fe²⁺-S, Fe³⁺-S and Sn⁴⁺-S bonds during the isomorphic substitution in the systems was established.     

Noncentrosymmetric cubic helical ferromagnets Mn1 ? yFeySi and Fe1 ? xCoxSi

Two systems of noncentrosymmetric cubic helical magnets Mn_{1 − y} Fe _y Si (y = 0.06, 0.08, 0.10) and Fe_{1 − x} Co _x Si (x = 0.10, 0.15, 0.20, 0.25, 0.30, 0.35, 0.50) have been compared. The concentration dependences of the critical temperature and magnetic field have been obtained using small-angle polarized-neutron scattering and analyzed in the framework of the Bak-Jensen model. It has been established that, among the two interactions that play the main role in these systems, i.e., the isotropic symmetric ferromagnetic exchange and the Dzyaloshinskii-Moriya isotropic antisymmetric interaction, the former interaction determines the critical temperature in the Mn_{1 − y} Fe _y Si system and the latter interaction determines this temperature in the Fe_{1 − x} Co _x Si system.     

Ternary alloys CdyZn1 ? yO and MgxZn1 ? xO as materials for optoelectronics

Thin films of Cd _y Zn_{1 − y} O and Mg _x Zn_{1 − x} O (y = 0−0.35, x = 0−0.45) ternary alloys have been grown by pulsed laser deposition onto sapphire substrates. The record solubility limits of Cd (y = 0.3) and Mg (x = 0.35) have been achieved in hexagonal zinc oxide. The mismatch of the lattice parameters a of Cd_0.2Zn_0.8O and Mg_0.35Zn_0.65O does not exceed 1%; in this case, the band gap discontinuity is 1.3 eV. The surface roughness of the films does not exceed 2.5 nm at x = 0−0.27 and y = 0−0.20.     

Study of high-temperature oxygen permeability in Sr1 ? xLaxCo0.8 ? yNbyFe0.2O3 ? z perovskites

The oxygen permeability of ceramic SrCo_{0.8 − y} Fe_0.2Nb _y O_{3 − z} (0 ≤ y ≤ 0.2) and La_0.3Sr_0.7Co_0.6Fe_0.2Nb_0.2O_{3 − z} disc membranes as a function of temperature and oxygen partial pressure was studied. Kinetic analysis was performed based on the experimental data on oxygen permeability as a function of oxygen partial pressure.     

Influence of the illumination on the subband structure and?occupation in AlxGa1?xN/GaN heterostructures

The subband structure and occupation in the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.     

Anomalous effect of magnetic field on the low-temperature thermal expansion of the Bi2Sr2?xLaxCuO6+δ and Nd2?xCexCuO4?δ HTSC systems in the non-superconducting phase

The thermal expansion of single crystals of the Bi₂Sr_2−x La _x CuO_6+δ high-temperature superconducting (HTSC) system in the insulating phase with compositions having no superconducting transition to a temperature of 1.8 K (x ≥ 0.8) is measured in an arbitrary direction in the (ab) plane in the temperature range of 7–50 K. Temperature regions of material compression upon heating are found. The study of anomalies in magnetic fields of 3 and 6 T, parallel and perpendicular to the c-axis revealed an anisotropic and nonmonotonic effect of the field on thermal expansion. Such anomalies for the n-type Nd_2−x Ce _x CuO_4−δ HTSC sample also having no superconducting transition are detected for the first time. The results show that the anomaly nature is caused by anisotropic electronic ordering, probably, by the charge density wave in the CuO₂ plane and superconductivity fluctuations in the insulating phase.     

Electronic properties of LiMn2?xTixO4

Ti-substituted LiMn₂O₄ (LiMn_2−x Ti _x O₄, x=0, 0.15, 0.30, 0.45, 0.60, and 0.75) has been synthesized using solid-state reactions. Their crystal and electronic structures were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD data suggested that the lattice parameters of LiMn_2−x Ti _x O₄ increase due to the replacement of Mn by Ti ions. XPS results indicated that the substituted Ti ions were in +4 oxidation state; consequently, the normal oxidation state of Mn ions has been detected by measuring the binding energy splitting of Mn 3s states, which decreases with the content of substituted Ti. The valence band spectra suggested that the intensity of e _g level of Mn 3d orbitals increased due to the increase of the Mn³⁺/Mn⁴⁺ ratio.     

Dielectric tunability and conduction mechanisms of?nanostructured (Pb1?xSrx)TiO3 thin films

The effect of nanosize grains to enhance dielectric tunability in chemically prepared (Pb_1−x Sr _x )TiO₃ (PST) (x=0.1 to 0.5) thin films has been observed. The grain size is evaluated from X-ray diffraction patterns and atomic force microscopy. The average grain size lies in the range of 80–23 nm with varying Sr content. The nanosize grains in the PST films control the dielectric behavior up to the higher frequency region and exhibit large tunability with low loss factor at room temperature. The current–voltage characteristics show a large tunability as electron transport takes place within a highly resistive Fermi gap.     

Synthesis and study of photocatalytic activity of nanoscale quasi-one-dimensional Ti1 ? xVxO2 (0 ≤ x ≤ 0.13) and Zn1 ? xCoxO (0 ≤ x ≤ 0.3) oxides

A original method of synthesis of quasi-one-dimensional Ti_{1 − x} V _x (OCH₂CH₂O)₂ (0 ≤ x ≤ 0.13) and Zn_{1 − x} Co _x (HCOO)(HOCH₂CH₂O) (0 ≤ x ≤ 0.3) has been developed. The synthesis products were used as a basis for nanoscale extended Ti_{1 − x} V _x O₂ and Zn_{1 − x} Co _x O oxides. The compounds obtained and products of their thermolysis were investigated by X-ray diffraction, microscopy, IR spectroscopy, thermogravimetry, and chemical analysis; the shape and size of particles were determined by scanning electron microscopy. The good prospects of Ti_{1 − x} V _x O₂ and Zn_{1 − x} Co _x O solid solutions as photocatalysts for hydroquinone oxidation are shown.     

Characterization of Cd1?xMgxTe film and plasma diagnostic studies by optical emission spectroscopy during sputtering

Cd_1−x Mg _x Te is an attractive II–VI semiconductor alloy candidate for obtaining energy gaps wider than 1.5 eV of CdTe needed for the top junction absorber layer in a polycrystalline thin-film tandem solar cell. We have shown that these alloy films can easily be prepared by sputtering, however, the sputtering rate is substantially lower than for CdTe and the attainable cell performance has been poor, both before and after activation treatments with chlorine-containing vapors. In this work we have applied optical emission spectroscopy (OES) using selected peaks of ArII, CdII, MgI, TeII and correlated the results with crystallographic and morphological characteristics of the deposited films. Results were obtained as a function of rf sputter power and sputter gas pressure.     

Effect of biaxial strain on the band gap of wurtzite AlxGa1?xN

First-principles calculations are applied to investigate the effect of biaxial strain on the band gap of wurtzite Al _x Ga_1−x N. The band gap and band gap bowing parameter increase with compressive strain and decrease with tensile strain. The strain-induced changes in the band gap of Al _x Ga_1−x N are linear in the strain range of about −1% to 1% while the linearity is invalid out of the range. The linear coefficient B(x), characterizing the relationship between the band gap and the biaxial stress, with a quadratic form is obtained. The value of the band gap bowing parameter decreases from 1.0 eV for −2% strain to 0.91 eV for unstrained and to 0.67 eV for 2% strain.     

Kinetics of glass transition and thermal stability of?Se58Ge42?xPbx?(9≤x≤20) glasses

Se₅₈Ge_42−x Pb _x (9≤x≤20) glasses have been prepared using conventional melt quenching technique. Differential Scanning Calorimetric (DSC) measurements show single glass transition and double crystallization, which indicate the occurrence of phase separation in the samples. The phases present in the samples were identified using XRD. The kinetics of the glass transition has been studied in terms of the variation of glass transition temperature with composition and heating rate. In addition to this, activation energy of the glass transition (E _t ) has also been evaluated and its composition dependence is also investigated. The thermal stability of these glasses has been investigated using various stability criteria: Deiztal first glass criterion, ΔT, Saad and Poulain weighted thermal stability, H′ and the S-parameter. The values of these parameters were obtained using various characteristic temperatures such as the glass transition temperature, T _g , the onset temperature of crystallization, T _c , and the peak crystallization temperature, T _p . The values of stability parameters show that the phase corresponding to second crystallization is more stable than the phase corresponding to first one. The stability in terms of the lead (Pb) content has been determined considering the values of stability parameters of the phase corresponding to second peak. It was found that the stability increases with the lead content.     

Effect of Mg doping and substrate temperature on the properties of pulsed laser deposited epitaxial Zn1?xMgxO thin films

In this paper, we report on the pulsed laser deposition of epitaxial (0002) oriented Zn_1−x Mg _x O thin films onto (0001) sapphire substrate in O₂ ambient at different deposition temperatures. Pulsed laser deposited Zn_1−x Mg _x O films showed (0002) oriented hexagonal wurtzite structure up to 34% of Mg concentration. The bandgap of Zn_1−x Mg _x O thin films is successfully tuned from 3.3 to 4.2 eV by adjusting the Mg concentration x=0.0 to x=0.34. Pulsed laser deposited Zn_1−x Mg _x O thin films were characterized by XRD, AFM, SEM, PL and UV–VIS spectrometer. We have also studied the effect of deposition temperature on to the structure, surface morphology and optical properties of Zn_1−x Mg _x O thin films.     

Ferromagnetic resonance and magnetic microstructure in nanocomposite films of Cox(SiO2)1 ? x and (CoFeB)x(SiO2)1 ? x

This paper reports on the results of the investigation of the relation between the magnetic microstructure and ferromagnetic resonance (FMR) in ferromagnetic metal-insulator composites by using granular alloys (Co₄₁Fe₃₉B₂₀) _x (SiO₂)_{1 − x} and Co _x (SiO₂)_{1 − x} as an example. A comparative analysis of the properties of FMR spectra and parameters of random magnetic anisotropy leads to correlations between these quantities. It has been found that the main mechanism that determines the FMR line width in the films under investigation is the exchange narrowing mechanism.     

Spin-wave resonance in a multilayer Co1 ? xPx/Co1 ? yPy structure as a method of detection of the Bragg gaps in a spin wave spectrum

The method of spin-wave resonance has been used to detect in multilayer (Co₉₈P₂/Co₉₅P₅) _N structures a modification of the exchange spin wave spectrum due to the formation of the first, second, and third Brillouin zones in a one-dimensional magnon crystal formed by a periodic modulation of the exchange. The band gaps have been measured for wave vectors k _b = π/(d ₁ + d ₂) and 2k _b .