Current patterning of 6H-SiC(0 0 0 1) surface by AFM

The Atomic Force Microscope (AFM) with the conducting cantilever has been used as a tool for controlled printing the well-defined shapes of conductive paths on the 6H-SiC(0 0 0 1) surface as well as paths connecting the shapes. For clean 6H-SiC(0 0 0 1) samples the metal-tip/sample contact is of the diode type. The conditions have been found (tip/sample voltage, current) for which the local morphology of the surface is modified during current flow between the tip and the sample. Such a modified surface shows quite a different conduction type of the tip/sample surface contact than that of the unmodified surface.     

Direct observation of slow morphological transformations and wetting behavior of pulsed laser deposited sub-monolayer gold on (0 0 0 1) sapphire in atmosphere

Using high-resolution atomic force microscope we observed in ambient atmosphere the slow morphological transitions of the incipient adlayer of gold grown on (0 0 0 1) sapphire substrate by pulsed laser deposition. The equivalent average uniform thickness of the gold deposition was about 0.55 Å, which is about one-fourth of its monolayer. A dynamic simulation revealed that about 10% of the gold was implanted into the substrate up to the depth of about 3.3 nm and the top monolayer of the sapphire surface was almost completely depleted of oxygen atoms due to the preferential sputtering by the plume particles. The gold adlayer transformed into a labile phase which enhanced the surface roughness and had a preferred orientation of a wavy structure during 24 h of the deposition. The auto-correlation function of this wavy structure in labile metastable phase revealed two-fold symmetry and provided a preferential size of about 4 nm (peak to peak) with a mean separation of 8 nm. At the end of about 6 days this phase was found to completely transform into an apparently de-wetted phase of beads with average in-plane diameter of ∼20 nm and height of ∼7 nm having large size distribution. Each bead was seen to have coating of a concentric corona layer, which might be that of the condensed moisture or other gaseous species from atmosphere because subjecting these samples to vacuum removed this layer. These observations shed light on the dynamics of the pulsed laser deposited metastable gold adlayer in the incipient stage of its growth on sapphire and their wetting or de-wetting mechanisms in ambient atmosphere.     

Nanoscale dislocation patterning in Bi(1 1 1)/Si(0 0 1) heteroepitaxy

Continuous, atomically flat, and epitaxial Bi(1 1 1) films could be grown on Si(0 0 1). The inherent strain of 2.3% between the Bi(1 1 1) and Si(0 0 1) lattices is relieved by the formation of a grating like one-dimensional misfit dislocation array at the heterointerface. The lattice distortions around each dislocation give rise to a pronounced height depression Δh = 0.12 nm of the surface, which results in a spot splitting in low-energy electron diffraction and a height contrast in scanning tunneling microscopy (STM). Using STM surface profiles across these depressions, the Burgers vector of the underlying isolated non-interacting dislocations is estimated to be 0.377 nm. For thicker Bi films the ordering of the dislocation network is increased. This reflects an increase of repulsive interaction between neighboring dislocations.     

In situ observation on Au(1 0 0) surface in molten EMImBF4 by electrochemical atomic force microscopy (EC-AFM)

The Au(1 0 0) surface structure in contact with 1-ethyl-3-methylimidazolium tetrafluoroborate (EMImBF₄) has been observed using electrochemical atomic force microscopy (EC-AFM) under an electrochemically controlled potential. The AFM images, taken in EMImBF₄ in the potential range from −0.6 to 0.2 V vs. Ag/Ag(I), shows a fourfold symmetry with the distance between protrusions of ≈0.30-0.32 nm. This structure agrees well with the ideal surface structure of Au(1 0 0)-(1 × 1) and it is very similar to that previously obtained in a sulfuric acid aqueous solution.     

Novel mesoscale defect structure on NiO(1 0 0) surfaces by atomic force microscopy

Cleaved NiO(1 0 0) surfaces were imaged with atomic force microscopy (AFM) to determine defect concentrations and morphology. Random 〈0 1 0〉 and 〈0 0 1〉 oriented steps, which have been previously characterized, were the most common defect observed on the cleaved surface and formed with step heights in multiples of 2.1 Å, the Ni-O nearest-neighbor distance, and terrace widths in the range of 25-100 nm. In addition, the surface showed novel mesoscale (∼0.5-2 μm) square pyramidal defects with the pyramid base oriented along 〈1 0 0〉 symmetry related directions. Upon etching, the pyramidal defects converted to more stable cubic pits, consistent with (1 0 0) symmetry related walls. The square pyramidal pits tended to cluster or to form along step edges, where the weakened structure is more susceptible to surface deformations. Also, a small concentration of square pyramidal pits, oriented with the base of the pyramid along 〈0 1 1〉, was observed on the cleaved NiO surfaces. For comparison purposes, chemical mechanical polished (CMP) NiO(1 0 0) substrates were imaged with AFM. Defect concentrations were of comparable levels to the cleaved surface, but showed a different distribution of defect types. Long-ranged stepped defects were much less common on CMP substrates, and the predominant defects observed were cubic pits with sidewalls steeper than could be accurately measured by the AFM tip. These defects were similar in size and structure to those observed on cleaved NiO(1 0 0) surfaces that had been acid etched, although pit clustering was more pronounced for the CMP surfaces.     

A structural parallel between Ge- and Si-induced 4 × 4 and 3 × 3 reconstructions on SiC(0 0 0 1) drawn from comparative RHEED oscillations

The initial Ge growth stages on a (√3 × √3)R30°-reconstructed SiC(0 0 0 1) surface (√3) have been studied using a complete set of surface techniques such as reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), atomic force microscopy (AFM) and photoemission and compared with similar Si surface enrichments in place of Ge. The investigations essentially focus on the wetting growth-regimes that are favoured by the use of the √3 surface as a starting substrate, this surface being the closest to a smooth and ideally truncated Si-terminated face of hexagonal SiC(0 0 0 1). Depending on temperature and Ge or Si coverages, varying surface organizations are obtained. They range from unorganized layer by layer growths to relaxed Ge(1 1 1) or Si(1 1 1) island growths, through intermediate attempts of coherent and strained Ge or Si surface layers, characterized by 4 × 4 and 3 × 3 surface reconstructions, respectively. RHEED intensity oscillation recordings, as a function of Ge or Si deposited amounts, have been particularly helpful to pinpoint the limited (by the high lattice mismatch) existence domains of these interesting coherent phases, either in terms of formation temperature or surface coverages. Prominently comparable data for these two Ge- and Si-related reconstructions allow us to propose an atomic model for the still unexplained Ge-4 × 4 one. It is based on a same local organization in trimer and ad-atom units for the Ge excess as admitted for the Si-excess of the 3 × 3 surface, the higher strain nevertheless favouring arrangements, for the Ge-units, in 4 × 4 arrays instead of 3 × 3 Si ones. Admitting such models, 1.25 and 1.44 monolayers of Ge and Si, should, respectively, be able to lie coherently on SiC, with respective lattice mismatches near 30% and 25%. The experimental RHEED-oscillations values are compatible with such theoretical ones. Moreover, these RHEED coverage determinations (for layer completion, for instance) inform us in turn about the initial Si richness of the starting √3 reconstruction and help us to discriminate between earlier contradictory atomic models proposed in the literature.     

Oxidation of epitaxial Y(0 0 0 1) films

We have investigated the oxidation behavior of MBE grown epitaxial Y(0 0 0 1)/Nb(1 1 0) films on sapphire substrates at elevated temperatures under atmospheric conditions with a combination of experimental methods. At room temperature X-ray diffraction (XRD) reveals the formation of a 25 Å thick YO_xH_x layer at the surface, while simultaneously oxide growth proceeds along defect lines normal to the film plane, resulting in the formation of a single crystalline cubic Y₂O₃ (2 2 2) phase. Furthermore, nuclear resonance analysis (NRA) reveals that hydrogen penetrates into the sample and transforms the entire Y film into the hydride YH₂ phase. Additional annealing in air leads to further oxidation radially out from the already existing oxide channels. Finally material transport during oxidation results in the formation of conically shaped oxide precipitations at the surface above the oxide channels as observed by atomic force microscopy (AFM).     

Growth of nano-crystalline metal dots on the Si(1 1 1)-7 × 7 surface saturated with C2H5OH

Metal atom on the Si(1 1 1)-7 × 7 surface undergoes migration by hopping among Si-adatom and Si-rest atom. If the hopping migration is prohibited, how change the deposited metals? In this paper, we studied the deposition of metals on the Si(1 1 1)-7 × 7 surface saturated with C₂H₅OH, on which the whole Si-rest atoms are changed to Si-H so that the hoping migration of metals will be prohibited. We found the growth of ca. 5 nm of crystalline dots by the deposition of Sn, Zn and Ag. Interestingly, Ag dots undergo layer-by-layer growth so that the surface is covered with 5 nm size dots with uniform height. When the hopping migration is prohibited, growth of dots is controlled by the kinetics of precursor state atoms instead of the lattice energy relating to lattice matching or strain.     

Vanadium nanoclusters on Si(1 1 1) 7 × 7 surface studied by scanning tunneling microscopy

The size distribution and shape transition of self-assembled vanadium silicide clusters on Si(1 1 1) 7 × 7 have been investigated by scanning tunneling microscopy. Nanoclusters were formed by submonolayer vanadium deposition at room temperature followed by subsequent annealing (solid phase epitaxy - SPE). At room temperature, initially V-nanoclusters are formed which occupy sites avoiding the corner hole parts of the unit cells in the Si(1 1 1) 7 × 7 surface. Upon annealing, strong metal-silicon reaction occur leading to the formation of vanadium silicide nanoclusters. As a function of temperature, both, flat (2D) and three dimensional (3D) clusters have been obtained. After annealing at temperatures around 900 K many faceted clusters are created, whereas at higher annealing temperature, around 1300 K, predominantly 3D clusters are formed. The size distribution of SPE grown clusters could be well controlled in the range of 3-10 nm. The cluster size depends on the annealing temperature as well as on the initial vanadium coverage. Based on high resolution STM images a structure model for one kind of vanadium disilicide clusters exposing atomically flat surfaces was proposed.     

Fabrication of rubrene nanowires on vicinal (0 0 0 1) sapphire surfaces

Morphology of high-vacuum deposited rubrene thin films on the annealed (0 0 0 1) vicinal sapphire surfaces was studied by atomic force microscopy in non-contact mode. Atomic force microscopy images of rubrene thin films indicate that a regular array of steps on the sapphire surface acts as a template for the growth of the arrays of rubrene nanosize wires. To further demonstrate that morphological features of a substrate are crucial in determining the morphology of rubrene layers we have grown rubrene on the sapphire surfaces that were characterized by the terrace-and-step morphology with islands. We have found preferential nucleation of rubrene molecules at the intersection between a terrace and a step, as well as around the islands located on terraces.     

Role of crystal orientation on the magnetic properties of CoFe2O4 thin films grown on Si (1 0 0) and Al2O3 (0 0 0 1) substrates using pulsed laser deposition

We report the influence of crystal orientation on the magnetic properties of CoFe₂O₄ (CFO) thin films grown on single crystal Si (1 0 0) and c-cut sapphire (Al₂O₃) (0 0 0 1) substrates using pulsed laser deposition technique. The thickness was varied from 200 to 50 nm for CFO films grown on Si substrates, while it was fixed at 200 nm for CFO films grown on Al₂O₃ substrates. We observed that the 200 and 100 nm thick CFO-Si films grew in both (1 1 1) and (3 1 1) directions and displayed out-of-plane anisotropy, whereas the 50 nm thick CFO-Si film showed only an (1 1 1) orientation and an in-plane anisotropy. The 200 nm thick CFO film grown on an Al₂O₃ substrate was also found to show a complete (1 1 1) orientation and a strong in-plane anisotropy. These observations pointed to a definite relation between the crystalline orientation and the observed magnetic anisotropy in the CFO thin films.     

Atomic structure of the Si(5 5 12)-2 × 1 surface

Based on the results of scanning tunneling microscopy studies of the reconstructed Si(5 5 12)-2 × 1 surface, its atomic structure has been found. It turns out that Si(5 5 12)-2 × 1 consists of four one-dimensional structures: honeycomb (H) chain, π-bonded H′ (π) chain, dimer-adatom (D/A) row, and tetramer (T) row. Its period is composed of three subunits, i.e., (i) (3 3 7) unit with a D/A row [D(3 3 7)], (ii) (3 3 7) unit with a T row [T(3 3 7)], and (iii) (2 2 5) unit with both a D/A and a T row. Two kinds of adjacent subunits, T(3 3 7)/D(3 3 7) and D(3 3 7)/(2 2 5), are divided by H chains with 2× periodicity due to buckling, while one kind of adjacent subunits, T(3 3 7)/(2 2 5), is divided by a π chain with 1× periodicity. Two chain structures, H and π chains, commute with each other depending upon the external stresses perpendicular to the chain, which is the same for two row structures, D/A and T rows. It can be concluded that the wide and planar reconstruction of Si(5 5 12)-2 × 1 is originates from the stress balance among two commutable chains and two commutable rows.     

Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(0 0 1) substrate

High density and ultrasmall size of Ge quantum dots (QDs) have been achieved directly on Si(0 0 1) (2 × 1) reconstruction surface. Their detailed morphology was observed by atomic force microscope (AFM) and shows that small pyramids, small domes, huts, and multi-headed large domes coexist in the film grown at 400 °C, while small domes and multi-headed large domes formed at 450 °C. Their low temperature photoluminescence (PL) showed that a very strong non-phonon (NP) peak with a large blue shift of 0.19 eV at 14 K, which can be attributed to their very high areal density, 5.2 × 10¹¹ cm⁻², and sub-10-nm mean size, 7.6 ± 2.3 nm.     

Quasiclassical studies of Eley-Rideal and hot-atom reactions on a surface at 94 K: H(D) → D(H) + Cu(1 1 1)

Reactions and reaction dynamics of gas-phase H(or D) atoms with D(or H) atoms adsorbed onto a Cu(1 1 1) surface have been investigated by the quasi-classical molecular dynamics method. To simulate the H(D) → D(H) + Cu(1 1 1) system at a 94 K surface temperature, D(or H) adsorbates were disseminated arbitrarily on the surface of Cu(1 1 1) to form 0.50, 0.28 and 0.18 ML of coverages. The interaction of hydrogen atoms and the surface system is worked out by an LEPS function. LEPS parameters have been determined by using the total energy values which were calculated by a density functional theory (DFT) method and the generalized gradient approximation (GGA) for the exchange-correlation energy for various configurations of one and two hydrogen atoms on the Cu(1 1 1) surface. The Cu(1 1 1) surface, imitated by an embedded-atom method which is a many-body potential parameterized by Voter-Chen, is formed as a multilayer slab. The slab atoms are permitted to move. Various processes, trapping onto the surface, inelastic reflection of the incident projectile and penetration of the adsorbate or projectile atom into the slab, are examined. The dependence of these mechanisms on isotopic replacement has also been analyzed. Considerable contributions of the hot-atom pathways for the product formations are consequently observed. The rate of subsurface penetrations is obtained to be larger than the sticking rate onto the surface.     

Structure and electronic properties of gold adsorbed on Ti(0 0 0 1)

The Au/Ti(0 0 0 1) adsorption system was studied by low energy electron diffraction (LEED) and photoemission spectroscopy with synchrotron radiation after step-wise Au evaporation onto the Ti(0 0 0 1) surface. For adsorption of Au at 300 K, no additional superstructures were observed and the (1 × 1) pattern of the clean surface simply became diffuse. Annealing of gold layers more than 1 ML thick resulted in the formation of an ordered Au-Ti surface alloy. Depending on the temperature and annealing time, three surface reconstructions were observed by LEED: (√3 × √3) R30°, (2 × 2) and a one-dimensional incommensurate (√3 × √3) rectangular pattern. The Au 4f core level and valence band photoemission spectra provided evidence of a strong chemical interaction between gold and titanium. The data indicated formation of an intermetallic interface and associated valence orbital hybridization, together with diffusion of gold into the bulk. Au core-level shifts were found to be dependent on the surface alloy stoichiometry.     

Structural and magnetic properties of evaporated Fe thin films on Si(1 1 1), Si(1 0 0) and glass substrates

We present experimental results on the structural and magnetic properties of series of Fe thin films evaporated onto Si(1 1 1), Si(1 0 0) and glass substrates. The Fe thickness, t, ranges from 6 to110 nm. X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to study the structure and surface morphology of these films. The magnetic properties were investigated by means of the Brillouin light scattering (BLS) and magnetic force microscopy (MFM) techniques. The Fe films grow with (1 1 0) texture; as t increases, this (1 1 0) texture becomes weaker for Fe/Si, while for Fe/glass, the texture changes from (1 1 0) to (2 1 1). Grains are larger in Fe/Si than in Fe/glass. The effective magnetization, 4πM_eff, inferred from BLS was found to be lower than the 4πM_S bulk value. Stress induced anisotropy might be in part responsible for this difference. MFM images reveal stripe domain structure for the 110 nm thick Fe/Si(1 0 0) only.     

Distribution of lattice-strain on partly nitrogen-covered Cu(0 0 1) surfaces

In-plane elastic lattice strain on the Cu(0 0 1)-c(2 × 2)N surfaces is investigated by scanning tunneling microscopy on the surface where nitrogen-adsorbed patches with average size of 5 × 5 nm² (c(2 × 2)N patches) are well separated by wide clean Cu surface. The lattice distortion on clean Cu surface is recognized in the vicinity of the boundary to a c(2 × 2)N patch. The positions of the protrusions observed on the c(2 × 2)N patch are compared with the surrounding undistorted (1 × 1) lattice of the clean Cu surface. Most of the protrusions on the c(2 × 2)N patches locate on the fourfold hollow sites of the undistorted Cu lattice. The lattice distortion is significant only near the boundary to the surrounding clean Cu surface.     

Olefin bonding mechanism and growth to (1 0 0)(2 × 1):H diamond

The bonding and growth mechanism of photochemically attached olefin molecules to (1 0 0)(2 × 1):H diamond is characterized using atomic force (AFM) and scanning tunneling microscopy (STM) experiments in combination with molecular orbital calculations. To identify growth schemas, diamond surfaces after 10, 40 and 90 min of photo-chemically stimulated growth have been characterized. These data show clearly island formation which is discussed taking into account a growth model from silicon. The island growth shows no directional properties which are attributed to arrangement and geometrical properties of hydrogen terminated carbon bonds at the surface of (1 0 0) oriented (2 × 1) reconstructed diamond.     

A nanoindentation study of the mechanical properties of ZnO thin films on (0 0 0 1) sapphire

The mechanical properties of epitaxial ZnO thin films grown on (0 0 0 1) sapphire substrate were investigated by nanoindentation with a Berkovich tip and compared with that of bulk ZnO single crystal. In all indents on ZnO film a single discontinuity (‘pop-in’) in the load versus indentation depth data was observed at a specific depth of between 13 and 16 nm. In bulk ZnO, however only 65% of indents showed pop-in event at a specific depth of between 12 and 20 nm. The mechanism responsible for the ‘pop-in’ event in the epitaxial ZnO thin films as well as in bulk ZnO was attributed to the sudden propagation of dislocations, which had been pinned down by pre-existing defects, along the pyramidal and basal {0 0 0 1} planes (cross slip). The elastic modulus and hardness of the epitaxial ZnO thin films were determined to be 154 ± 5 and 8.7 ± 0.2 GPa, respectively, at an indentation depth of 30 nm.     

Morphology and optical properties of p-type porous GaAs(1 0 0) layers made by electrochemical etching

Porous GaAs layers were formed by electrochemical etching of p-type GaAs(1 0 0) substrates in HF solution. A surface characterization has been performed on p-type GaAs samples using X-ray photoelectron spectroscopy (XPS) technique in order to get information about the chemical composition, particularly on the surface contamination. According to the XPS spectra, the oxide layer on as-received porous GaAs substrates contains As₂O₃, As₂O₅ and Ga₂O₃. Large amount of oxygen is present at the surface before the surface cleaning.Compared to untreated GaAs surface, room temperature photoluminescence (PL) investigations of the porous layers reveal the presence of two PL bands: a PL peak at ∼871 nm and a “visible” PL peak at ∼650-680 nm. Both peak wavelengths and intensities varied from sample to sample depending on the treatment that the samples have undergone. The short PL wavelength at 650-680 nm of the porous layers is attributed to quantum confinement effects in GaAs nano-crystallites. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-sized crystallites were observed on the porous GaAs surface. An estimation of the mean size of the GaAs nano-crystals obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results.