Electron spectroscopy analysis on NbN to grow and characterize NbN/AlN/NbN Josephson junction

Three layers, NbN based Josephson junction, has been growth by RF and by DC sputtering within the constrain required by the photolithography technology. An interesting superconducting film with critical temperature of , well above the temperature of the commercial cryocooler, has been obtained reducing sputtering power and finding a proper N₂ concentration in the gas mixture. The search of the new sputtering parameters has been obtained with the help of electron spectroscopy and X-ray diffraction analysis.     

MgO衬底NbN/AlN/NbN多层膜的制备

本文主要讨论磁控溅射设备制备的NbN/AlN/NbN三层结构的技术工艺,为制备All-NbN的 NbN/AlN/NbN SIS 隧道结作准备.我们在室温下利用直流磁控溅射工艺制备了单晶NbN薄膜,并对其超导电性做了初步的研究;又利用射频磁控溅射工艺制备了取向较好的AlN薄膜.我们利用磁控溅射方法制作NbN/AlN/NbN多层薄膜,然后对制备SIS隧道结进行了一些探索.     

NbN/AlN/NbN超导隧道结的制备工艺

研究了在MgO基片上制备NbN/AlN/NbN结的工艺,NbN和AlN的制备分别采用直流磁控溅射和交流磁控溅射。为了得到良好特性的隧道结,首先要在高真空反应室里沉积三层膜结构,经过光刻和反应离子刻蚀,得到底电极和桥区的三层结构图形。再经过第二步光刻和刻蚀,仅保留底电极最下层的NbN,得到结区的三层结构图形,并覆盖AlN绝缘层。经过Lift-off工艺,洗去结区上的光刻胶,最后沉积上电极。使用四端子方法对制备的隧道结进行了一系列测量,特别是在高频(THz)下的响应。     

AlN/NbN纳米结构多层膜的共格异结构外延生长研究

采用射频磁控溅射法制备了NbN,AlN单层膜及不同调制周期的AlN/NbN纳米结构多层膜,采用X射线衍射仪、小角度X射线反射仪和高分辨透射电子显微镜等对薄膜进行了表征.结果表明：单层膜AlN为六方结构,NbN为面心立方结构;AlN/NbN多层膜中AlN为六方结构,NbN为面心立方结构,界面处呈共格状态,其共格关系为c-NbN（111）面平行于h-AlN（0002）面,晶格错配度为013%.热力学计算表明:AlN/NbN多层膜中不论AlN层与NbN层的厚度如何,AlN层均不会形成亚稳的立方AlN,而是形成 关键词： AlN/NbN纳米结构多层膜 共格外延生长 异结构     

MgO(111)上NbN和AlN薄膜的生长研究

在制备NbN/AlN/NbN隧道结的工艺过程中,为了获得具有优质单晶结构的NbN薄膜,我们在MgO(111)基片上探索了直流溅射法制备NbN薄膜的生长工艺条件,XRD研究分析表明,我们获得了单晶结构良好的NbN薄膜;为了支持作为上电极的NbN薄膜的生长,也需要良好的AlN薄膜用作势垒层,我们采用射频磁控溅射设备和纯净的Al靶对AlN薄膜进行了制备研究.实验结果表明,所获得的AlN薄膜具有六方c-轴取向,并讨论了衬底和薄膜界面处可能的结构情况.     

Improvements of performance on sputter-coated niobium films for superconducting cavities by adding a NbN interlayer

A new type of superconducting film is studied at Peking University in order to improve the properties of sputter-coated films for superconducting cavities. NbN film and NbN–Nb film have been prepared by DC diode sputtering technology at certain nitrogen content and temperature. NbN film is prepared between copper and Nb film as a barrier against copper diffusion into Nb. Micro-structure analyses show that the NbN–Nb films grow well on the copper substrate. The T_c of the Cu–NbN–Nb increases to 9.5 K compared to the 9.2 K transition temperature of bulk Nb.     

高温超导直接冷却的氮化铝与无氧铜接触界面热阻的实验研究

氮化铝(AlN)具有高热导性、高电绝缘性,是超导二元电流引线热截流结构中常用的材料之一。根据稳态导热法建立低温真空实验装置,实验研究了超导冷却系统热截流结构中,界面温度和接触压力对AlN块材与无氧铜(OFHC-Cu)块材间接触界面热阻的影响。在实验温度(90K-210K)和压力(0.273MPa-0.985MPa)条件下,AlN/OFHC-Cu接触界面热阻随接触压力的提高而降低,而当界面温度上升时界面热阻由于热载子热运动的强化而降低,温度较高时,接触界面热阻随压力变化的速率趋缓。低温下AlN/OFHC-Cu间的接触界面热阻是直接冷却超导系统的设计和超导系统的热稳定性方面必需解决的问题。     

MgO和Si上NbN超薄薄膜的生长研究

我们在单晶MgO(100)、Si(100)和SiOx/Si基片上成功生长了纳米厚度的超薄NbN薄膜,利用现代分析手段:X射线衍射(XRD)、透射电子显微镜(TEM)、原子力显微镜(AFM)等技术分析研究了所制备的超薄NbN薄膜的微观结构、厚度、表面界面情况等物理特性。研究表明,在MgO(100)基片上获得了外延生长的单晶NbN超薄薄膜,在Si(100)和SiOx/Si基片上获得的是多晶NbN超薄薄膜。厚度均约6nm左右。这些超薄薄膜的超导转变温度分别为:MgO上薄膜是14.46K,Si和SiOx上薄膜分别是8.74K和9.01K.     

AlN/InN和AlN/GaN超晶格能带结构研究

利用Krönig-Penney 模型和形变势理论,从理论上探讨了纤锌矿型AlN/InN和AlN/GaN超晶格系统的能带结构及不同应变模式对能带结构的影响,计算得到了能带结构随各亚层参量变化的一般性规律、超晶格的能量色散关系、应变造成的影响以及不同亚层厚度的系统禁带宽度和导带第一子禁带宽度.研究发现,通过改变亚层厚度可以从不同形式设计能带结构,应变会改变系统禁带宽度,使带阶和子能带明显窄化,价带结构趋于复杂甚至生成准能带结构.与实验结果对比后发现,该模型适于模拟窄势阱结构超晶格,而对于宽势阱则必须 关键词： AlN/InN和AlN/GaN超晶格 Krönig-Penney模型 应变 子能带     

First-principles study on ferromagnetism in C-doped AlN

First-principles calculations are performed to study the electronic structures and magnetic properties of C-doped AlN. Both generalized gradient approximation (GGA) and GGA+U calculations show that a substitutional C atom introduces magnetic moment of about 1.0 μB, which comes from the partially occupied 2p orbitals of the C, its first neighboring Al and first neighboring N atoms (GGA) or out-of-plane first and fifth neighboring N atoms (GGA+U), among which the atomic moment of the C is the biggest. The U correction for the anion-2p states obviously changes the magnetic moment distribution of Al and N atoms and transforms the ground state of C-doped AlN to insulating from half-metallic. The C atoms can induce ferromagnetic ground state with long-range couplings between the moments in C-doped AlN. The ferromagnetic coupling can be explained in terms of the two band coupling model.     

Fiske steps in surface intrinsic Josephson junctions of Bi2Sr2CaCu2O8+δ single crystals

Current－voltage characteristics of the surface intrinsic Josephson junctions under a magnetic field parallel to CuO_2 planes have been studied experimentally. Fiske steps in such a junction have been observed. The Swihart velocity for the junction is found to be 7.2×10^5m/s, which corresponds to the velocity mode of a single junction.     

退火重结晶制备AlN/C复合泡沫材料及其力学性能研究

为了得到一种轻质、高强度、耐烧灼的新型碳泡沫材料,以无定形AlN为添加剂,在空心微球/网络复合型碳泡沫的基础上,采用退火热处理工艺成功地制备出了AlN/C复合泡沫材料.通过扫描电镜、透射电镜对样品进行表征,测试结果表明无定形AlN在碳微球的表面重结晶为AlN晶须,其直径大约为50nm左右,长度10μm以上,具有较大的长径比.X-射线衍射峰证明样品石墨化程度高,且AlN晶须为六方结构.X-射线光电子能谱测试发现在287.5eV处有较明显的C-N峰出现,这表明AlN和碳泡沫在界面处通过C-N键结合.同时,对其力学性能进行测试,通过分析应力-应变测试结果,AlN/C复合泡沫材料的压缩强度为40.27MPa,相对碳泡沫材料而言提高了近一个数量级.测试结果表明,AlN晶须显著增强了碳泡沫的压缩强度,这种新型复合泡沫材料有望应用于各种抗压减震航空材料.     

Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

We simulate the current-voltage （I-V） characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate lengths using the quasi-two-dimensional （quasi-2D） model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas （213EG） with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.     

Influence of the transparency of tunnel barriers in Nb/Al2O3/Al/Al2O3/Nb junctions on transport properties

The transparency of the tunnel barriers in double-barrier junctions influences the critical current density and the form of the current–voltage characteristics (IVC). Moreover, the barrier asymmetry is an important parameter, which has to be controlled in the technological process. We have performed a systematic study of the influence of the barrier transparency on critical current, I_C, and normal resistance, R_N, by preparing SIS and SINIS junctions under identical technological conditions and comparing their transport properties. We have fabricated Nb/Al₂O₃/Nb and Nb/Al₂O₃/Al/Al₂O₃/Nb devices with different current densities using a conventional fabrication process, varying pressure and oxidation time. The thickness of the Al middle electrode in all Nb/Al₂O₃/Al/Al₂O₃/Nb junctions was 6 nm. Patterning of the multilayers was done using conventional photolithography and the selective niobium etching process. The current density of SIS junctions was changed in the range from 0.5 to 10 kA/cm². At the same conditions the current density of SINIS devices revealed 1–100 A/cm² with non-hysteretic IVC and characteristic voltages, I_CR_N, of up to 200 μV. By comparing the experimental and theoretical temperature dependence of the I_CR_N product we estimated the barrier transparency and its asymmetry. The comparison shows a good agreement of experimental data with the theoretical model of tunneling through double-barrier structures in the dirty limit and provides the effective barrier transparency parameter γ_eff≈300. A theoretical framework is developed to study the influence of the barrier asymmetry on the current–phase relationship and it is proposed to determine the asymmetry parameter by measuring the critical current suppression as function of applied microwave power. The theoretical approach to determine the non-stationary properties of double-barrier junctions in the adiabatic regime is formulated and the results of calculations of the I–V characteristics are given in relevant limits. The existence and the magnitude of a current deficit are predicted as function of the barrier asymmetry.     

Current-influenced voltage noise in bulk polycrystalline high-Tc superconductors

The 1/f voltage noise in bulk polycrystalline high-temperature superconductors (HTSC) under bias current and magnetic field has its origin in the noise current-dependence of the grain boundary junctions (GBJs), due in turn to the correlated effects of junction critical current and normal resistance fluctuations. The analogy between the results obtained by varying the bias current through the specimen and those performed with temperature as variable is evidenced. The noise maxima obtained in both sets of measurements turn out to be caused by the junction critical current fluctuations, which dominate when the currents flowing through the GBJs are close to the Josephson critical current. The anti-phase correlation between the normal resistance and the critical current fluctuations is responsible for the monotonical decrease of the noise at constant bias current, with the temperature exceeding the value corresponding to the noise maximum. In contrast, varying the bias current at fixed temperature, the voltage noise exhibits a local minimum followed by an increasing tendency after passing through the maximum.     

Giant shot-like voltage noise in high current density Nb–AlOx–Nb superconducting tunnel junctions

The flat voltage noise component of current biased, high-transparency Nb/AlO_x/Nb superconducting tunnel junctions has been investigated at frequencies up to 70 kHz. Several aspects of the analyzed phenomena suggest the presence of current noise effects induced by the discreteness of the charge carriers. At subgap voltages, where excess currents occur, a behavior coherent with a multiple Andreev reflection-assisted transport through the tunnel barrier has been found. However, the measured charge values exceed any theoretical prediction.     

Fourier transform spectroscopy of new emission systems of NbN in the visible region

The emission spectrum of NbN has been reinvestigated in the 8000-35 000  cm⁻¹ region using a Fourier transform spectrometer and two groups of new bands were observed. The bands observed in the 18 000-20 000 cm⁻¹ region have been assigned to a new ³Π-X³Δ transition. Three bands with R heads near 19 463.8, 19 659.0 and 19 757.0 cm⁻¹ have been assigned as 0-0 bands of the ³Π₂-X³Δ₃, ³Π₁-X³Δ₂ and ³Π_0±-X³Δ₁ subbands, respectively, of this new transition. Three additional ΔΩ = 0 bands have been observed in the 24 000-26 000  cm⁻¹ region. A 0-0 band with an R head near 25 409.9 cm⁻¹ has been assigned as a ΔΩ = 0 transition having X³Δ₂ as its lower state while two additional bands with heads near 25 518.7 and 25 534.8 cm⁻¹ were found to be ΔΩ = 0 bands having X³Δ₁ as the common lower state. Two of these three bands are perhaps subbands of a ³Δ-X³Δ transition. Most of the excited levels are affected by perturbations.     

Electron energy loss spectroscopy of ultrathin pentacene field effect transistors

Electron energy loss spectra of ultrathin pentacene field effect transistors were measured by applying gate bias voltages. Tailing and shouldering of the primary peak on the energy loss side was observed for 1.5 nm thick films when a negative gate bias was applied. The energy loss spectra obtained from the deconvolution of the primary electron profile showed peaks, and the peak energies increased as a function of the gate bias voltage. This is consistent with the behavior of two-dimensional plasmons of field-induced carriers. The thickness dependence is explained by the thickness of the accumulation layer and the probing depth of the spectroscopy.     

Electron irradiation of polyesterurethane: study of chemical and structural modifications using FTIR, UV spectroscopy and GPC

To understand the electron irradiation effects on polymers, a polyesterurethane (ESPU) was irradiated by a 200 keV electron beam perpendicular to the surface under a vacuum of 0.04 Torr with electron fluxes of 0.25–1.25×10¹³ s⁻¹ on the irradiated zone. To perform a study of ESPU degradation versus the electron's penetration depth, a stratified structure was made with seventeen 30-μm-thick films. The irradiation was performed at both room temperature (293 K) and 77 K. The applied fluence was in the range of 10¹⁴–10¹⁷ cm⁻². Chemical transformations, such as degradation and oxidation, are studied by FTIR, by following NH and OH bond evolution, and by UV spectroscopy, by following the absorbance shift towards the visible region. These effects are analyzed versus depth, fluence and electron flux. Structural transformations are also characterized by GPC for soluble samples. An increase of crosslinking rate of the polymer is observed and analyzed.     

Electron energy-loss spectroscopy in the low-loss region as a characterization tool of electrode materials

Energy losses below 100 eV are by far less exploited than higher losses in electron energy-loss spectroscopy. Two new examples are given to illustrate the characterization possibilities offered by spectra in this energy range. Typical materials that could be used as electrodes in electrochemical cells were chosen as application cases. Through the use of calculations based on density functional theory, we first demonstrate that the first peak present at the lithium K edge in Li _x TiP₄ can give access to the precise localisation of inserted Li atoms in the f.c.c. structure. In particular, different tetrahedral sites could be differentiated according to their distance to the Ti site. Secondly, calculations of valence electron energy-loss spectra of perovskite materials indicate that a characteristic peak for regular perovskite (Pm m space group) exists in the 10–15 eV range. The high sensitivity of this peak to the distortion of the octahedron arrangements is also demonstrated. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.