Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfaces

Growth of Ag islands under ultrahigh vacuum condition on air-exposed Si(0 0 1)-(2 × 1) surfaces has been investigated by in-situ reflection high energy electron diffraction (RHEED). A thin oxide is formed on Si via exposure of the clean Si(0 0 1)-(2 × 1) surface to air. Deposition of Ag on this oxidized surface was carried out at different substrate temperatures. Deposition at room temperature leads to the growth of randomly oriented Ag islands while well-oriented Ag islands, with (0 0 1)_Ag||(0 0 1)_Si, [1 1 0]_Ag||[1 1 0]_Si, have been found to grow at substrate temperatures of ≥350 °C in spite of the presence of the oxide layer between Ag islands and Si. The RHEED patterns show similarities with the case of Ag deposition on H-passivated Si(0 0 1) surfaces.     

Cobalt growth on two related close-packed noble metal surfaces

We report on scanning tunneling microscopy (STM) studies of submonolayer growth of cobalt on the close-packed (1 1 1) surfaces of Au and Ag. Both substrates belong to the category of noble metals, and they both exhibit a lattice misfit of ∼13% with respect to the (0 0 0 1) plane of Co. However, whereas the Au(1 1 1) surface reconstructs into the rather complex herringbone structure that disperses the cobalt into nanoclusters, the Ag(1 1 1) surface does not reconstruct in its clean state, and the surface dispersion of Co on this surface is therefore different. For Ag(1 1 1) at temperatures ranging from 160 to 200 K and for Au(1 1 1) at room temperature, the Co growth is three-dimensional starting with double layer islands followed by additional single layers. For both the Co/Au(1 1 1) and the Co/Ag(1 1 1) system, a Moiré pattern develops in the first bilayer of the Co islands, indicating an epitaxial but not commensurate growth. For Co islands with more than two layers, the subsequent layers are commensurate with the lower Co layers in the islands, but exhibit a decreasing corrugation of the Moiré pattern as observed in STM images. Despite a difference in the Moiré lattice constant and rotational angle, we show that the cobalt lattice constant is the same on both surfaces. We furthermore relate defect nucleation on the herringbone reconstruction on Au(1 1 1) to defect nucleation on steps on Ag(1 1 1).     

Two-photon resonance in optical second harmonic generation from quantum well states in ultra-thin Ag films grown on Si(1 1 1) surfaces

We studied optical second harmonic generation (SHG) oscillations during the growth of Ag films on Si(1 1 1) 7 × 7 clean and H-terminated surfaces. In the growth on the 7 × 7 surfaces at room temperature, the second and third peaks of the oscillation shift towards the thinner side with an increase in pump photon energy. Our analysis revealed that these peaks are caused by two-photon resonant transitions from the n = 1 and 2 occupied quantum well states (QWSs) in the Ag film to the Ag/Si interface at 1.9 eV above the Fermi level (E_f). In Ag growth on the hydrogen-terminated surfaces, the SHG oscillation was similar to that on the 7 × 7 surfaces at room temperature. However, the QWS-related peak was suppressed in the growth at 300 °C. This is attributed to an inhibited intrusion of the interface state into the Ag layers.     

Crystallization and surface morphology of Au/SiO2 thin films following furnace and flame annealing

A crystallization and surface evolution study of Au thin film on SiO₂ substrates following annealing at different temperatures above the eutectic point of the Au/Si system are reported. Samples were prepared by conventional evaporation of gold in a high vacuum (10⁻⁷ mbar) environment on substrates at room temperature. Thermal treatments were performed by both furnace and flame annealing techniques. Au thin films can be crystallized on SiO₂ substrates by both furnace and flame annealing. Annealing arranges the Au crystallites in the (1 1 1) plane direction and changes the morphology of the surface. Both, slow and rapid annealing result in a good background in the XRD spectra and hence clean and complete crystallization which depends more on the temperature than on the time of annealing. The epitaxial temperature for the Au/SiO₂ system decreases in the range of 350-400 °C. Furnace and flame annealing also form crystallized gold islands over the Au/SiO₂ surface. Relaxation at high temperatures of the strained Au layer, obtained after deposition, should be responsible for the initial stages of clusters formation. Gold nucleation sites may be formed at disordered points on the surface and they become islands when the temperature and time of annealing are increased. The growth rate of crystallites is highest around 360 °C. Above this temperature, the layer melts and gold diffuses from the substrate to the nucleation sites to increase the distance between islands and modify their shapes. Well above the eutectic temperature, the relaxed islands have hexagonally shaped borders. The mean crystallite diameters grow up to a maximum mean size of around 90 nm. The free activation energy for grain boundary migration above 360 °C is 0.2 eV. Therefore the type of the silicon substrate changes the mechanism of diffusion and growth of crystallites during annealing of the Au/Si system. Epitaxial Au(1 1 1) layers without formation of islands can be prepared by furnace annealing in the range of 300-310 °C and by flame annealing of a few seconds and up to 0.5 min.     

Preferred orientations in nano-gold/silica/silicon interfaces

Gold in contact with silicon substrates Si(1 0 0), Si(1 1 1), and SiO₂ is studied by thermal evaporation and annealing in N₂ using the modified sphere-plate technique. The final orientation distribution of crystalline Au films grown on Si substrate systems that incorporate a native amorphous oxide layer of silica and Au on amorphous silica (SiO₂ glass) substrates is influenced by preferred orientations and twinning. Experimental evidence suggests that the orientation of Au{1 1 1} close packed planes (multiply twinned) was found to be of low-energy as the annealing temperature was increased to 530 °C and 920 °C. Additional orientations were observed for Au{1 0 0} on Si(1 0 0) substrates and Au{1 0 0}, {1 1 0}, and {3 1 1} on SiO₂ substrates. After annealing at 920 °C the size distribution of the gold particles was determined to be within the range of 20-800 nm while the morphology of gold surface appears spherical to faceted in character. These results show similarities to recent findings for smaller nano-size 1D particles, islands and thin Au films on silicon annealed over lower temperature ranges.     

AES, LEED and PYS investigation of Au deposits on InSe/Si(1 1 1) substrate

Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Photoelectron Yield Spectroscopy (PYS) measurements have been used to monitor the interaction of gold (Au) deposits on InSe/Si(1 1 1) substrate. Au has been sequentially deposed under ultra-high vacuum onto 40 Å-thick film of layered semiconductor InSe which is epitaxially grown by molecular beam epitaxy (MBE) on a Si(1 1 1)1 × 1-H substrate and kept at room temperature. Au coverage varies from 0.5 monolayer to 20 monolayers (ML) (in terms of InSe atomic surface plane: 1 ML = 7.2 1014 at/cm²) which is corresponding to 1.30 Å of Au-metal. The Au/InSe/Si(1 1 1) system was characterized as function of Au deposit, we noticed an interaction at room temperature starts as an apparent intercalation process until 5 ML. Beyond this dose Au islands begin to form on the sample surface without interaction with InSe substrate, thus the interface is far from to be a simple junction Au-InSe.     

Adsorption of silane and methylsilane on gold surfaces

The adsorption of silane and methylsilane on the (1 1 0) and polycrystalline surfaces of gold is examined using vibrational electron energy loss spectroscopy (VEELS), angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and X-ray photoelectron spectroscopy (XPS). Adsorption of silane onto the Au(1 1 0) surface at low temperatures is dissociative and yields an SiH₂ and possibly also SiH₃ surface species. Further dissociation occurs at room temperature to yield adsorbed SiH, which is tilted on the surface, with complete dissociation to Si occurring by 110 °C. The similarity in the UP spectra for silane adsorbed on the polycrystalline sample suggests that the same surface species are present over that temperature range. Above 200 °C, spectral changes suggest rearrangement of the Si atoms, which, by 350 °C, have diffused into the bulk. Adsorption of methylsilane onto the (1 1 0) surface at low temperatures initially produces adsorbed CH₃SiH or CH₃SiH₂, with undissociated methylsilane physisorbing at higher exposures. By room temperature, desorption and decomposition leaves (or direct adsorption yields) only adsorbed CH₃Si. After further heating, the hydrogen-carbon bonds of the CH₃ group break to leave an adsorbed SiC species. On the polycrystalline surface, methylsilane adsorption is the same at low temperatures as on (1 1 0). In contrast to the latter, though, the UP spectra indicate that direct exposures at room temperature yield adsorbed Si or SiC initially, with CH₃Si again adsorbing at higher exposures. Upon further heating to 330 °C, little if any methyl-groups remain on the surface and the Si has started to diffuse into the bulk.     

The effect of substrate surface roughness on ZnO nanostructures growth

The ZnO nanowires have been synthesized using vapor-liquid-solid (VLS) process on Au catalyst thin film deposited on different substrates including Si(1 0 0), epi-Si(1 0 0), quartz and alumina. The influence of surface roughness of different substrates and two different environments (Ar + H₂ and N₂) on formation of ZnO nanostructures was investigated. According to AFM observations, the degree of surface roughness of the different substrates is an important factor to form Au islands for growing ZnO nanostructures (nanowires and nanobelts) with different diameters and lengths. Si substrate (without epi-taxy layer) was found that is the best substrate among Si (with epi-taxy layer), alumina and quartz, for the growth of ZnO nanowires with the uniformly small diameter. Scanning electron microscopy (SEM) reveals that different nanostructures including nanobelts, nanowires and microplates have been synthesized depending on types of substrates and gas flow. Observation by transmission electron microscopy (TEM) reveals that the nanostructures are grown by VLS mechanism. The field emission properties of ZnO nanowires grown on the Si(1 0 0) substrate, in various vacuum gaps, were characterized in a UHV chamber at room temperature. Field emission (FE) characterization shows that the turn-on field and the field enhancement factor (β) decrease and increases, respectively, when the vacuum gap (d) increase from 100 to 300 μm. The turn-on emission field and the enhancement factor of ZnO nanowires are found 10 V/μm and 1183 at the vacuum gap of 300 μm.     

Si epitaxial growth on LaAlO3(0 0 1)

We report on the growth of Si on c(2 × 2) reconstructed LaAlO₃(0 0 1) surfaces at high substrate temperature (700 °C) by molecular beam epitaxy. An initial Volmer-Weber mode is evidenced using reflection high energy electron diffraction (RHEED), X-ray photoelectron diffraction (XPD) and atomic force microscopy. After the deposition of a few monolayers, the islands coalesce. Using X-ray photoelectron spectroscopy, we demonstrate that Si islands exhibit an abrupt interface with the LaAlO₃ substrate without formation of silicate or silica. Finally, combined RHEED and XPD measurements show the epitaxial growth of Si with a unique Si(0 0 1)//LaAlO₃(0 0 1) and Si<1 0 0>//LAO<1 1 0> relationship.     

Growth, alloy formation and reaction with oxygen of Ag and Au submonolayers on W(1 1 0) studied by valence band and core level photoemission

We have studied epitaxial submonolayers of Ag and Au deposited one after another onto W(1 1 0) at room temperature and subsequently annealed at 600 K. Photoemission spectroscopy of valence bands and the Ag3d_5/2 core level has been used to monitor two-dimensional alloy formation. The extent of alloying depends on the order of deposition, composition and annealing. We have also studied the reaction of alloy surfaces to exposure of molecular oxygen at 300 and 600 K.     

Ethylene dissociation on flat and stepped Ni(1 1 1): A combined STM and DFT study

The dissociative adsorption of ethylene (C₂H₄) on Ni(1 1 1) was studied by scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The STM studies reveal that ethylene decomposes exclusively at the step edges at room temperature. However, the step edge sites are poisoned by the reaction products and thus only a small brim of decomposed ethylene is formed. At 500 K decomposition on the (1 1 1) facets leads to a continuous growth of carbidic islands, which nucleate along the step edges.DFT calculations were performed for several intermediate steps in the decomposition of ethylene on both Ni(1 1 1) and the stepped Ni(2 1 1) surface. In general the Ni(2 1 1) surface is found to have a higher reactivity than the Ni(1 1 1) surface. Furthermore, the calculations show that the influence of step edge atoms is very different for the different reaction pathways. In particular the barrier for dissociation is lowered significantly more than the barrier for dehydrogenation, and this is of great importance for the bond-breaking selectivity of Ni surfaces.The influence of step edges was also probed by evaporating Ag onto the Ni(1 1 1) surface. STM shows that the room temperature evaporation leads to a step flow growth of Ag islands, and a subsequent annealing at 800 K causes the Ag atoms to completely wet the step edges of Ni(1 1 1). The blocking of the step edges is shown to prevent all decomposition of ethylene at room temperature, whereas the terrace site decomposition at 500 K is confirmed to be unaffected by the Ag atoms.Finally a high surface area NiAg alloy catalyst supported on MgAl₂O₄ was synthesized and tested in flow reactor measurements. The NiAg catalyst has a much lower activity for ethane hydrogenolysis than a similar Ni catalyst, which can be rationalized by the STM and DFT results.     

Electron and lattice structure of ultra thin Ag films on Si(1 1 1) and Si(0 0 1)

We studied the low temperature (T ? 130 K) growth of Ag on Si(0 0 1) and Si(1 1 1) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3 × √3)R30° LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(1 1 1)(√3 × √3)R30°Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3 × √3)R30°Ag flat terraces in between. On Si(0 0 1) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(0 0 1)-2 × 1 with a twinned Ag(1 1 1) structure at coverage’s as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(1 0 0) surfaces has been studied as a function of temperature (40-300 K).     

Bimodal growth of manganese silicide on Si(1 0 0)

Two different growth modes of manganese silicide are observed on Si(1 0 0) with scanning tunneling microscopy. 1.0 and 1.5 monolayer Mn are deposited at room temperature on the Si(1 0 0)-(2 × 1) substrate. The as-grown Mn film is unstructured. Annealing temperatures between room temperature and 450 °C lead to small unstructured clusters of Mn or Mn_xSi_y. Upon annealing at 450 °C and 480 °C, Mn reacts chemically with the Si substrate and forms silicide islands. The dimer rows of the substrate become visible again. Two distinct island shapes are found and identified as MnSi and Mn₅Si₃.     

Growth mode and electronic structure of Au nano-clusters on NiO(0 0 1) and TiO2(1 1 0)

The growth mode and electronic structure of Au nano-clusters grown on NiO and TiO₂ were analyzed by reflection high-energy electron diffraction, a field-emission type scanning electron microscope, medium energy ion scattering and photoelectron spectroscopy. Au was deposited on clean NiO(0 0 1)-1 × 1 and TiO₂(1 1 0)-1 × 1 surfaces at room temperature with a Knudsen cell at a rate of 0.25-0.35 ML/min (1 ML = 1.39 × 10¹⁵ atoms/cm²:Au(1 1 1)). Initially two-dimensional (2D) islands with thickness of one Au-atom layer grow epitaxially on NiO(0 0 1) and then neighboring 2D-islands link each other to form three-dimensional (3D)-islands with the c-axis oriented to the [1 1 1] direction. The critical size to form 3D-islands is estimated to be about 5 nm². The shape of the 3D-islands is well approximated by a partial sphere with a diameter d and height h ranging from 2.0 to 11.8 nm and from 0.95 to 4.2 nm, respectively for Au coverage from 0.13 to 4.6 ML. The valence band spectra show that the Au/NiO and Au/TiO₂ surfaces have metallic characters for Au coverage above 0.9 ML. We observed Au 4f spectra and found no binding energy shift for Au/NiO but significant higher binding energy shifts for Au/TiO₂ due to an electron charge transfer from Au to TiO₂. The work function of Au/NiO(0 0 1) gradually increases with increase in Au coverage from 4.4 eV (NiO(0 0 1)) to 5.36 eV (Au(1 1 1)). In contrast, a small Au deposition(0.15 to 1.5 ML) on TiO₂(1 1 0) leads to reduction of the work function, which is correlated with an electron charge transfer from Au to TiO₂ substrate.     

Preferential heights in the growth of Ag islands on Si(1 1 1)-(7 × 7) surfaces

Growth behavior of thin Ag films on Si substrates at room temperature has been investigated by scanning tunneling microscopy and reflection high energy electron diffraction. In the layer-plus-island growth Ag islands show strongly preferred atomic scale heights and flat top. At low coverage (1 ML), islands containing two atomic layers of Ag are overwhelmingly formed. At higher coverages island height distribution shows strong peaks at relative heights corresponding to an even number (2, 4, 6, …) of Ag atomic layers. Beyond some coverage the height preference vanishes due to the appearance of screw dislocations and spiral growth.     

Electrochemical Au deposition on stepped Si(1 1 1)-H surfaces: 3D versus 2D growth studied by AFM and X-ray diffraction

In order to grow magnetic layers on silicon substrates, a non-magnetic buffer layer is often needed to avoid silicide formation and to reproduce the perpendicular magnetic anisotropy obtained on metal single crystals, as in the case of Co on Au(1 1 1) and Pt(1 1 1). In this context, we have studied the electrochemical growth of Au buffer layers, and show that it is possible to obtain different film morphologies on hydrogen-terminated vicinal Si(1 1 1) surfaces by varying the electrochemical deposition parameters and solution composition. Two different morphologies have been obtained as observed by atomic force microscopy: continuous 2D Au films (chloride solution at pH 4), and films consisting in flat top 3D Au islands decorating the Si(1 1 1) step edges (cyanide solution at pH 14). X-ray diffraction measurements reveal that the gold layer and islands have Au(1 1 1) orientation and are in epitaxy with the Si(1 1 1) surface. In the case of islands, the lateral facets have also Au(1 1 1) orientation. Results are discussed within a model in which the breaking of the Si-H surface bonds plays a major role in the Au nucleation and growth mechanisms.     

Nanoscale ion-beam mixing in Au–Si and Ag–Si eutectic systems

MeV ion induced mixing in the nanoscale regime for Au and Ag nanoislands on silicon substrates has been studied. Au and Ag nanoislands are grown on silicon substrates at room temperature and irradiated with 1.5-MeV Au²⁺ ions at various fluences. Cross-sectional high-resolution transmission electron microscopy and Rutherford backscattering spectrometry (RBS) are used to study the ion-beam mixing in Au/SiO_x/Si and Ag/SiO_x/Si systems. We observe a metastable mixed phase for the Au–Si system at a fluence of 1×10¹⁴ ionscm^-2, while no mixed phase is formed for the Ag–Si system. For both Au–Si and Ag–Si systems, a part of the islands is pushed into the substrate. The mixed phase of the Au–Si system is found to be crystalline in nature. The higher eutectic temperature and lower heat of mixing of the Ag–Si system compared to the Au–Si system could be responsible for the lack of mixing and silicide formation in the Ag–Si system. PACS 61.80.Jh; 61.82.Rx; 68.37.Lp; 64.75.+g; 61.46.+w     

Growth of silver structures on silicon surfaces observed in vivo by scanning tunneling microscopy

Early stages of growth of silver thin films on oriented silicon surfaces Si(1 0 0)2 × 1 and Si(1 1 1)7 × 7 were studied directly during deposition at room temperature by the scanning tunneling microscopy. Single Ag atoms deposited on the Si(1 0 0)2 × 1 surface diffuse too fast on the surface to be imaged by the microscope. Nucleation on C-type defects of the Si(1 0 0)2 × 1 reconstruction has been observed. During further growth, the defects represent stable terminations of silver chains. Ag nanoclusters growing on the Si(1 1 1)7 × 7 surface have been studied as a system with low diffusivity at room temperature. On this surface, presence of effective interaction between Ag clusters and individual Ag atoms in neighboring cells of the reconstruction has been identified. The interaction results in lowering the barrier for Ag atom hopping to an adjacent unit cell occupied by an Ag cluster. Unique possibilities arising from scanning the surface directly during growth are demonstrated.     

Reaction of water with Ce-Au(1 1 1) and CeOx/Au(1 1 1) surfaces: Photoemission and STM studies

This article reports photoemission and STM studies for the adsorption and dissociation of water on Ce-Au(1 1 1) alloys and CeO_x/Au(1 1 1) surfaces. In general, the adsorption of water at 300 K on disordered Ce-Au(1 1 1) alloys led to O-H bond breaking and the formation of Ce(OH)_x species. Heating to 500-600 K induced the decomposition or disproportionation of the adsorbed OH groups, with the evolution of H₂ and H₂O into gas phase and the formation of Ce₂O₃ islands on the gold substrate. The intrinsic Ce ↔ H₂O interactions were explored by depositing Ce atoms on water multilayers supported on Au(1 1 1). After adsorbing Ce on ice layers at 100 K, the admetal was oxidized immediately to yield Ce³⁺. Heating to room temperature produced finger-like islands of Ce(OH)_x on the gold substrate. The hydroxyl groups dissociated upon additional heating to 500-600 K, leaving Ce₂O₃ particles over the surface. On these systems, water was not able to fully oxidize Ce into CeO₂ under UHV conditions. A complete Ce₂O₃ → CeO₂ transformation was seen upon reaction with O₂. The particles of CeO₂ dispersed on Au(1 1 1) did not interact with water at 300 K or higher temperatures. In this respect, they exhibited the same reactivity as does a periodic CeO₂(1 1 1) surface. On the other hand, the Ce₂O₃/Au(1 1 1) and CeO_2−x/Au(1 1 1) surfaces readily dissociated H₂O at 300-500 K. These systems showed an interesting reactivity for H₂O decomposition. Water decomposed into OH groups on Ce₂O₃/Au(1 1 1) or CeO_2−x/Au(1 1 1) without completely oxidizing Ce³⁺ into Ce⁴⁺. Annealing over 500 K removed the hydroxyl groups leaving behind CeO_2−x/Au(1 1 1) surfaces. In other words, the activity of CeO_x/Au(1 1 1) for water dissociation can be easily recovered. The behavior of gold-ceria catalysts during the water-gas shift reaction is discussed in light of these results.