Growth and morphology of Cobalt thin films on Pd(1 1 1)

We report on the growth of thin Co films on Pd(1 1 1) at three different temperatures 180 K, 300 K, and 550 K. The structure and morphology was determined by scanning tunneling microscopy and low energy electron diffraction. The growth mode was found to vary with temperature. For 180 K and 300 K, we observed a tendency to double layer growth for the initial layers while at elevated temperatures, the initial film grows in single layer. For most conditions, non-ideal three-dimensional growth was observed. Two-dimensional growth was only found for growth temperature of 550 K and coverages above 5 ML. Depending on temperature, the Co islands at low coverages exhibit three principally different shapes: dendritic at 180 K, hexagonal at 300 K and triangular at 550 K. For growth at 550 K and coverages above 5 ML, the islands changed to an irregular shape. This transition is most likely responsible for the transition to 2D growth. Further, the large strain is relaxed by the creation of a dislocation network with mixed fcc and hcp stacking. Depending on the temperature and coverage, a hexagonal or a triangular network was observed. Finally, we have investigated the effect of annealing Co films prepared at 180 K and 300 K. Heating to 490 K leads to coarsening and intermixing.     

The Si(1 1 1)-(7 × 7) reconstruction: A surface close to a Mott-Hubbard metal-insulator transition?

Li adsorption at extremely low coverages on the “metallic” Si(1 1 1)-(7 × 7) surface has been experimentally studied recently by β-NMR experiments. Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α = 1/T₁ is almost constant in between 50 K and 300 K sample temperature and rises Arrhenius like above. In order to understand this behaviour in a transparent way a closed form analysis is presented using rectangular density of states distributions. The almost temperature independent relaxation rate below 300 K points to an extremely localized and thus narrow band (width about 10 meV) which pins the Fermi energy. Because of the steeply rising relaxation rate beyond 300 K it is located energetically within a gap (about 380 meV wide) in between a lower filled and an upper empty (Hubbard) band. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.     

Growth and thermal evolution of submonolayer Pt films on Ru(0 0 0 1) studied by STM

The growth of submonolayer Pt on Ru(0 0 0 1) has been studied with scanning tunneling microscopy. We focus on the island evolution depending on Pt coverage θ_Pt, growth temperature T_G and post-growth annealing temperature T_A. Dendritic trigonal Pt islands with atomically rough borders are observed at room temperature and moderate deposition rates of about 5 × 10⁻⁴ ML/s. Two types of orientation, rotated by 180° and strongly influenced by minute amounts of oxygen are observed which is ascribed to nucleation starting at either hcp or fcc hollow sites. The preference for fcc sites changes to hcp in the presence of about one percent of oxygen. At lower growth temperatures Pt islands show a more fractal shape. Generally, atomically rough island borders smooth down at elevated growth temperatures higher than 300 K, or equivalent annealing temperatures. Dendritic Pt islands, for example, transform into compact, almost hexagonal islands, indicating similar step energies of A- and B-type of steps. Depending on the Pt coverage the thermal evolution differs somewhat: While regular islands on Ru(0 0 0 1) are formed at low coverages, vacancy islands are observed close to completion of the Pt layer.     

Femtosecond pulsed laser deposition of Ge quantum dot growth on Si(1 0 0)-(2 × 1)

Ge quantum dots were grown on Si(1 0 0)-(2 × 1) by femtosecond pulsed laser deposition at various substrate temperatures using a femtosecond Ti:sapphire laser. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to analyze the film structure and morphology. The morphology of germanium islands on silicon was studied at different coverages. The results show that femtosecond pulsed laser deposition reduces the minimum temperature for epitaxial growth of Ge quantum dots to ∼280 °C, which is 120 °C lower than previously observed in nanosecond pulsed laser deposition and more than 200 °C lower than that reported for molecular beam epitaxy and chemical vapor deposition.     

Sulfur-induced mobilization of Au surface atoms on Au(1 1 1) studied by real-time STM

The interaction of sulfur with gold surfaces has attracted considerable interest due to numerous technological applications such as the formation of self-assembled monolayers and as a chemical sensor. Here, we report on the interaction of sulfur with Au(1 1 1) at two different temperatures (300 K and 420 K) studied by real-time scanning tunnelling microscopy, low energy electron diffraction and Auger electron spectroscopy. In the low coverage regime (<0.1 ML), S adsorption lifts the herringbone reconstruction of the clean Au(1 1 1) surface indicating a lateral expansion of the surface layer. An ordered (√3 × √3)R30° sulfur adlayer develops as the coverage reaches ∼0.3 ML. At higher S coverages (>0.3 ML) gold surface atoms are removed from regular terrace sites and incorporated into a growing gold sulfide phase. At 300 K this process leads to the formation of a rough pit and mound surface morphology. This gold sulfide exhibits short-range order and an incommensurate, long-range ordered AuS phase develops upon annealing at 450-525 K. In contrast, formation of an ordered AuS phase via rapid step-retraction rather than etch pit formation is observed during S-interaction with Au(1 1 1) surfaces at 420 K. Our results shed new light on the S-Au(1 1 1) interaction.     

The temperature dependence of the interaction of NO + CO on Pt{1 0 0}

Infrared reflection absorption spectroscopy together with mass spectrometry has been used to investigate the interaction of NO and CO on Pt{1 0 0}, initially prepared in the reconstructed ‘hex’ phase, under ambient pressures of these gases, in the temperature range 300-500 K. The results allow the local and total coverages of adsorbed CO and NO to be related to the rate of reaction to produce gas phase CO₂, and provide insight into the species present on the surface during the so-called low temperature oscillatory reaction regime of this process. At temperatures below that at which NO dissociation occurs (approximately 390-400 K) adsorption is controlled by the non-reactive displacement of NO by CO and results in a CO-poisoned surface. Above 400 K when significant CO₂ production occurs, the NO coverage increases to produce a surface with NO and CO fully intermixed; the increase in NO coverage is attributed to the higher rate of NO arrival from the gas phase (with a partial pressure ratio of P_NO:P_CO>1) at free surface sites created by NO dissociation and subsequent reaction with CO. The competition between these two processes of non-reactive NO displacement by CO and reactive displacement of CO by NO is proposed to determine the parameter space of the low temperature oscillatory regime. Rapid equilibration between bridged and atop CO species leads to them appearing to exhibit identical reaction behaviour. Particularly at the lowest reaction temperatures (around 400 K), islands of pure CO may coexist on the surface but not participate in the reaction. Under conditions corresponding to the high temperature oscillatory regime, small quantities of absorbed CO, but no NO, are seen on the surface.     

Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50-480 °C) has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). Hydrogen exposure at low temperatures (∼50 °C) produces a disordered (1 × 1) surface covered with AsH_x clusters. At higher temperatures (150-400 °C) exposure to hydrogen leads to the formation of mixed c(2 × 2) and c(4 × 2) surface domains with H adsorbed on surface Ga atoms that are exposed due to the H induced loss of As from the surface. At the highest temperature (480 °C) a disordered (2 × 4) reconstruction is formed due to thermal desorption of As from the surface. The results are consistent with the loss of As from the surface, either through direct thermal desorption or as a result of the desorption of volatile compounds which form after reaction with H.     

Quasiclassical studies of Eley-Rideal and hot-atom reactions on a surface at 94 K: H(D) → D(H) + Cu(1 1 1)

Reactions and reaction dynamics of gas-phase H(or D) atoms with D(or H) atoms adsorbed onto a Cu(1 1 1) surface have been investigated by the quasi-classical molecular dynamics method. To simulate the H(D) → D(H) + Cu(1 1 1) system at a 94 K surface temperature, D(or H) adsorbates were disseminated arbitrarily on the surface of Cu(1 1 1) to form 0.50, 0.28 and 0.18 ML of coverages. The interaction of hydrogen atoms and the surface system is worked out by an LEPS function. LEPS parameters have been determined by using the total energy values which were calculated by a density functional theory (DFT) method and the generalized gradient approximation (GGA) for the exchange-correlation energy for various configurations of one and two hydrogen atoms on the Cu(1 1 1) surface. The Cu(1 1 1) surface, imitated by an embedded-atom method which is a many-body potential parameterized by Voter-Chen, is formed as a multilayer slab. The slab atoms are permitted to move. Various processes, trapping onto the surface, inelastic reflection of the incident projectile and penetration of the adsorbate or projectile atom into the slab, are examined. The dependence of these mechanisms on isotopic replacement has also been analyzed. Considerable contributions of the hot-atom pathways for the product formations are consequently observed. The rate of subsurface penetrations is obtained to be larger than the sticking rate onto the surface.     

Adsorption, ordering, and chemistry of nitrobenzene on Si(1 0 0)-2 × 1

Surface chemistry of nitrobenzene on Si(1 0 0)-2 × 1 has been investigated using multiple internal reflection Fourier-transform infrared spectroscopy (MIR-FTIR), Auger electron spectroscopy (AES) and thermal desorption mass spectrometry. Molecular adsorption of nitrobenzene at submonolayer coverages is dominating at cryogenic temperatures (100 K). As the surface temperature is increased to 160 K, chemical reaction involving nitro group occurs, while the phenyl entity remains intact. Thus, a barrier of approximately 40.8 kJ/mol is established for the interaction of the nitro group of nitrobenzene with the Si(1 0 0)-2 × 1 surface. Further annealing of the silicon surface leads to the decomposition of nitrobenzene. The concentration of nitrogen and oxygen remains constant on a surface within the temperature interval studied here. AES studies also suggest that the majority of carbon-containing products remain bound to the surface at temperatures as high as 1000 K. The only chemical reaction leading to the release of the gaseous products is benzene formation around 670 K. The amount of benzene accounts only for a few percent of the surface species, while the rest of the phenyl groups connected to the silicon surface via a nitrogen linker remain stable even at elevated temperatures, opening an opportunity for stable surface coatings.     

Catalytic reduction of NO in the presence of benzene on a Pt(3 3 2) surface

The catalytic reduction of NO in the presence of benzene on the surface of Pt(3 3 2) has been studied using Fourier transform infra red reflection-absorption spectroscopy (FTIR-RAS) and thermal desorption spectroscopy (TDS). IR spectra show that while the presence of benzene molecules at low coverage (e.g., following an exposure of just 0.25 L) promotes NO-Pt interaction, the adsorption of NO on Pt(3 3 2) at higher benzene coverages is suppressed. It is also shown that there are no strong interactions between the adsorbed NO molecules and the benzene itself or benzene-derived hydrocarbons, which can lead to the formation of intermediate species that are essential for N₂ production.TDS results show that the adsorbed benzene molecules undergo dehydrogenation accompanied by hydrogen desorption starting at 300 K and achieving a maximum at 394 K. Subsequent dehydrogenation of the benzene-derived hydrocarbons then begins with hydrogen desorption starting at 500 K. N₂ desorption from NO adlayers on clean Pt(3 3 2) surface becomes significant at temperatures higher than 400 K, giving rise to a peak at 465 K. This peak corresponds to N₂ desorption from NO dissociation on step sites. The presence of benzene promotes N₂ desorption, depending on the benzene coverage. When the benzene exposure is 0.25 L, the N₂ desorption peak at 459 K is dramatically increased. Increasing benzene coverage also results in the intensification of N₂ desorption at ∼410 K. At benzene exposures of 2.4 L, N₂ desorption develops as a broad peak with a maximum at ∼439 K.It is concluded that the catalytic reduction of NO by platinum in the presence of benzene proceeds by NO decomposition and subsequent oxygen removal at temperatures lower than 500 K, and NO dissociation is a rate-limiting step. The contribution of benzene to N₂ desorption is mainly attributed to providing a source of H, which quickly reacts with NO-derived atomic O, leaving the surface with more vacant sites for further NO dissociation.     

Infrared reflection absorption study of carbon monoxide adsorption on Cu(1 0 0)-c(2 × 2)-Pd surfaces formed by palladium vacuum-depositions at various temperatures

Using infrared reflection absorption spectroscopy (IRRAS) and temperature programmed desorption (TPD), we investigated carbon monoxide (CO) adsorption and desorption behaviors on atomic checkerboard structures of Cu and Pd formed by Pd vacuum deposition at various temperatures of Cu(1 0 0). The 0.15-nm-thick Pd deposition onto a clean Cu(1 0 0) surface at room temperature (RT) showed a clear c(2 × 2) low-energy electron diffraction (LEED) pattern, i.e. Cu(1 0 0)-c(2 × 2)-Pd. The RT-CO exposure to the c(2 × 2) surfaces resulted in IRRAS absorption caused by CO adsorbed on the on-top sites of Pd. The LEED patterns of the Pd-deposited Cu(1 0 0) at higher substrate temperatures revealed less-contrasted c(2 × 2) patterns. The IRRAS intensities of the linearly bonded CO bands on 373-K-, 473-K-, and 673-K-deposited c(2 × 2) surfaces are, respectively, 25%, 22%, and 10% less intense than those on the RT-deposited surface, indicating that Pd coverages at the outermost c(2 × 2) surfaces decrease with increasing deposition temperature. In the initial stage of the 90-K-CO exposure to the RT surface, the band attributable to CO bonded to the Pd emerged at 2067 cm⁻¹ and shifted to higher frequencies with increasing CO exposure. At saturation coverage, the band was located at 2093 cm⁻¹. In contrast, two distinct bands around 2090 cm⁻¹ were apparent on the spectrum of the 473-K-deposited surface: the CO saturation spectrum was dominated by an apparent single absorption at 2090 cm⁻¹ for the 673-K-deposited surface. The TPD spectra of the surfaces showed peaks at around 200 and 300 K, which were ascribable respectively to Cu-CO and Pd-CO. Taking into account the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the ordered checkerboard structures.     

CO adsorption on Au(3 1 0) and Au(3 2 1): 6-Fold coordinated gold atoms

The adsorption of CO on Au(3 1 0) and Au(3 2 1) was studied using a combination of thermal desorption spectroscopy and high resolution core level photoemission spectroscopy. These vicinal Au surfaces both have 6-fold coordinated atoms at the step edges but have a different terrace structure. The CO adsorption behavior was found to be very similar for both surfaces. Three different desorption peaks due to chemisorbed CO were identified, which desorb around 100 K(α), 120 K(β) and 180 K(γ), respectively. The C1s and O1s spectra of the chemisorbed CO show a complex shake-up structure. Our experimental results indicate that CO only adsorbs on the step atoms. The different desorption peaks are explained by substrate-mediated long-range interactions between the adsorbates. Comparison with literature results shows that the CO adsorption energy is not only dependent on the coordination number of the Au atoms, but that the exact geometrical structure of the surface also plays a role.     

Oxidation of epitaxial Y(0 0 0 1) films

We have investigated the oxidation behavior of MBE grown epitaxial Y(0 0 0 1)/Nb(1 1 0) films on sapphire substrates at elevated temperatures under atmospheric conditions with a combination of experimental methods. At room temperature X-ray diffraction (XRD) reveals the formation of a 25 Å thick YO_xH_x layer at the surface, while simultaneously oxide growth proceeds along defect lines normal to the film plane, resulting in the formation of a single crystalline cubic Y₂O₃ (2 2 2) phase. Furthermore, nuclear resonance analysis (NRA) reveals that hydrogen penetrates into the sample and transforms the entire Y film into the hydride YH₂ phase. Additional annealing in air leads to further oxidation radially out from the already existing oxide channels. Finally material transport during oxidation results in the formation of conically shaped oxide precipitations at the surface above the oxide channels as observed by atomic force microscopy (AFM).     

Quantum states of hydrogen (H, D, T) atoms on Cu(1 0 0) and (1 1 0) surfaces

We investigate the quantum mechanical behavior of adsorbed hydrogen (H, D, T) on Cu(1 0 0) and (1 1 0) surfaces. We construct potential energy surfaces (PESs) for the motion of the hydrogen H atom on Cu(1 0 0) and (1 1 0) surfaces within the framework of density functional theory. The potential energy takes a minimum value on the hollow site of Cu(1 0 0) and on the short bridge site of Cu(1 1 0). Moreover, we calculate the quantum states of hydrogen atom motion on these calculated PESs. The ground state wave function of the hydrogen atom motion is strongly localized around the hollow site on the Cu(1 0 0) surface. On the other hand, the ground state wave function of the hydrogen atom motion on Cu(1 1 0) is distributed from the short bridge site to two neighboring pseudo-threefold sites. We finally show isotope effects on the quantum states of the motion of hydrogen on both surfaces.     

Investigation of hydrogen interaction with the Si(1 1 1)-7 × 7 surface by STM with Bi/W tips

The STM technique with a special Bi/W tip was used to study the interaction of hydrogen atoms with the Si(1 1 1)-7 × 7 surface. The reactivity of different room temperature (RT) adsorption sites, such as adatoms (A), rest atoms (R), and corner holes (CH) was investigated. The reactivity of CH sites was found to be ∼2 times less than that of R and A sites. At temperatures higher than RT, hydrogen atoms rearrange among A, R, and CH sites, with increased occupation of R sites (T <  300 °C). Further temperature increase leads to hydrogen desorption, where its surface diffusion plays an active role. We discuss one of the possible desorption mechanisms, with the corner holes surrounded by a high potential barrier. Hydrogen atoms have a higher probability to overcome the desorption barrier rather than diffuse either into or out of the corner hole. The desorption temperature of hydrogen from CH, R, and A sites is about the same, equal to ∼500 °C. Also it is shown that hydrogen adsorption on the CH site causes slight electric charge redistribution over neighbouring adatoms, namely, increases the occupation of electronic states on A sites in the unfaulted halves of the Si(1 1 1)-7 × 7 unit cell. Based on these findings, the indirect method of investigation with conventional W tips was suggested for adsorbate interaction with CH sites.     

Structure analysis of W(0 0 1)2 × 1-O surface at room and liquid nitrogen temperatures

Surface structure of O-adsorbed W(0 0 1) surface after annealing to 1200 K has been analyzed by low energy electron diffraction at 77 K as well as at room temperature. The optimum structure has tungsten missing rows and oxygen double rows. Furthermore, the R-factor is minimized at the structure that O atoms are adsorbed on one of the two different threefold hollow sites of the (1 1 0) facet appearing on the W(0 0 1)2 × 1 with missing row. However, the results suggest that two domains of O atoms adsorbed on both the two different threefold hollow sites coexist. Then, I-V curves have been analyzed as a function of the mixing ratio of the two domains having different O adsorption sites at room and low temperatures. The energy difference between these two sites has been estimated to be 6.5 meV from the temperature dependence of the mixing ratio.     

Low temperature InSb(0 0 1) surface structure studied by scanning tunneling microscopy

InSb(0 0 1) surface prepared by ion sputtering and thermal annealing has been studied in the temperature range from 77 K up to 300 K using scanning tunneling microscopy (STM). At 300 K the surface is c(8 × 2) reconstructed as indicated by low energy electron diffraction and STM images, and its structure appears to be consistent with the “ζ-model” recently proposed for this surface. Upon lowering of the temperature below 180 K a new phase appears on the surface. This phase is characterized by the surface structure period doubling along [1 1 0], lowering the surface symmetry from c2mm to p2, and appearance of structural domains. Possible origins of the new phase are discussed.     

Morphology of Ni ultrathin films on Mo(1 1 0) and W(1 0 0) studied by LEED and STM

The morphology of ultrathin Ni films on Mo(1 1 0) and W(1 0 0) has been studied by low-energy electron diffraction and scanning tunneling microscopy. Ni films grow pseudomorphically on Mo(1 1 0) at 300 K for a coverage of 0.15 ML. A (8 × 1) structure is found at 0.4 ML, which develops into a (7 × 1) structure by 0.8 ML. The film undergoes a structural change to fcc Ni(1 1 1) at 6 ML. The growth mode switches from layer-by-layer to Stranski-Krastanov between 4 ML and 6 ML. Annealing at around 850 K results in alloying of submonolayer films with the substrate, while for higher coverages the Ni agglomerates into nanowedge islands. Ni films grow pseudomorphically on W(1 0 0) up to a coverage of around 2 ML at 300 K, above which there is a structural change from bcc to hcp Ni with the epitaxial relationship . This is accompanied by the formation of orthogonal domains of uniaxial strain-relieving dislocations from the third layer of the film. For coverages up to 1 ML the growth proceeds by formation of two-dimensional islands, but shifts to three-dimensional growth by 2 ML with rectangular islands aligned along the 〈0 1 1〉 substrate directions. Annealing at around 550 K results in agglomeration of Ni into larger islands and increasing film roughness.     

Molecular beam epitaxy of organic films investigated by high resolution low energy electron diffraction (SPA-LEED): 3,4,9,10-perylenetetracarboxylicacid-dianhydride (PTCDA) on Ag(1 1 1)

A detailed investigation of the multilayer growth of PTCDA on Ag(1 1 1) by high resolution LEED (SPA-LEED) is reported. The first two monolayers are closed and exhibit a structure, which is commensurate with respect to the underlying Ag(1 1 1) surface. The lattice parameters are close to those of the (1 0 2) plane of the β bulk phase of PTCDA, with deviations ?2%. The vertical stacking of the second layer with respect to the first monolayer (observed at 300 K) corresponds to that in the β bulk phase of PTCDA. At high growth temperatures (400 K), Stranski-Krastanov growth occurs from the third monolayer onward, and PTCDA clusters, preferentially with few well defined facets, grow. The structure of the clusters is that of the thermodynamically more stable α bulk phase of PTCDA. Contrary, at low growth temperatures (200 K), the growth proceeds in the Frank van der Merve mode, with several open layers. From slope selection there is evidence for an Ehrlich-Schwoebel barrier. The lateral packing of the PTCDA grown at low temperatures corresponds within error to that of the β bulk phase. The low temperature structure and morphology is meta-stable. Short annealing at 300 K flattens the PTCDA film, and prolonged annealing at 400 K causes the film to adapt the structure and morphology obtained directly at 400 K growth temperature. Presumably, the formation of layers with a β-phase-like lattice at low temperature is due to the better fit of the β phase, compared to the α phase lattice, to the underlying commensurate monolayer. However, at high growth temperatures, the thermodynamically more stable α phase grows, reducing the area of lattice misfit to the underlying commensurate first two layers by formation of clusters.