Electron transport in nanogranular ferromagnets

We study electronic transport properties of ferromagnetic nanoparticle arrays and nanodomain materials near the Curie temperature in the limit of weak coupling between the grains. We calculate the conductivity in the Ohmic and non-Ohmic regimes and estimate the magnetoresistance jump in the resistivity at the transition temperature. The results are applicable for many emerging materials, including artificially self-assembled nanoparticle arrays and a certain class of manganites, where localization effects within the clusters can be neglected.     

Anti-ferroelectric polarization transitions in quantum-dot-quantum-well arrays

With the improvement in fabrication techniques it is now possible to produce atom-like semiconductor structures with unique electronic properties. This makes possible periodic arrays of nanostructures in which the Coulomb interaction, polarizability and tunneling may all be varied. This theoretical study investigates the collective properties of 2D arrays and 3D face-centered cubic lattices of singly charged nanospherical shells, sometimes called 'quantum dot-quantum wells' or 'core-shell quantum dots'. We find that, for square arrays, the classical ground state is an Ising anti-ferroelectric (AFE), while the quantum ground state undergoes a transition from a uniform state to an AFE. The triangular lattice, in contrast, displays properties characteristic of frustration. Three-dimensional face-centered cubic lattices polarize in planes, with each layer alternating in direction. We discuss the possible experimental signals of these transitions.     

Variable orbital coupling in a two-dimensional quantum-dot solid probed on a local scale

The optoelectronic properties of semiconductor quantum-dot (QD) solids depend on the electronic structure of the building blocks and their interactions. Disorder may affect the coupling on a local scale. We have measured the density of states of 2D arrays of PbSe QDs site by site using scanning tunneling spectroscopy. It markedly differs from that of isolated QDs due to electronic coupling in the array. We observe strong local variations in the coupling strength with two prototypical cases: delocalization of the conduction electrons only, and full coupling with both hole and electron delocalization over the QD sites in the array.     

Theoretical and Experimental analysis of ZnPc for its local ordering and electronic structure

Zinc Phthalocyannine (ZnPc) has been investigated intensely for fabricating plastic solar cells, and there are very limited reports available relating molecular structure and its corresponding macroscopic properties linked with simulation and electronic structure. In fact, our previous reports have demonstrated a partial ordering of the ZnPc molecules [1]. As a continuation of our previous work, we report here the structural determination of atomic and electronic distribution in this material, and a detailed analysis of its involvement in interactions that produce local domains in partial periodic structures. The use of high resolution transmission electron microscopy (HRTEM) and digital processing based on the frequency selection allowed us to distinguish the contrast from local arrays of fringes with distances around 0.37 and 0.35 nm between them. From the quantum mechanical calculations and approximations for single molecules and from classical molecular mechanics for two to six molecule arrays, we identified the type of ordering and the effects on the corresponding frontier orbital (HOMO and LUMO) and the electrostatic potential. The calculated models and a simulation of the HRTEM images demonstrate that the molecular arrays observed in the samples are determined by the electrostatic interactions and the production of arrays influence significantly the optical and electronic properties of the ZnPc material. PACS 84.60.Jt; 87.64.Ee; 02.70.Ns; 03.65.2w     

Electron cotunneling transport in gold nanocrystal arrays

We describe current-voltage (I-V) characteristics of alkyl-ligated gold nanocrystals ~5 nm arrays in a long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the nanocrystals. For long ligands, electronic diffusion occurs through sequential tunneling and follows activated laws, as a function of temperature σ∝e(-T(0)/T) and as a function of electric field I∝e(-E(0)/E). For better conducting arrays, i.e., with small ligands, the transport properties cross over to the cotunneling regime and follow Efros-Shklovskii laws as a function of temperature σ∝e(-(T(ES)/T)(1/2) and as a function of electric field I∝e(-(E)(ES)/E)(1/2). The data show that electronic transport in nanocrystal arrays can be tuned from the sequential tunneling to the cotunneling regime by increasing the tunnel barrier transparency.     

Study of the in-plane and c-axis fluctuation conductivity of melt-textured YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7</Subscript> under hydrostatic pressure

Strongly confined nano-systems, such as one-dimensional nanowires, feature deviations in their structural, electronic and optical properties from the corresponding bulk. In this work, we investigate the behavior of long-wavelength, optical phonons in vertical arrays of InAs nanowires by Raman spectroscopy. We attribute the main changes in the spectral features to thermal anharmonicity, due to temperature effects, and rule out the contribution of quantum confinement and Fano resonances. We also observe the appearance of surface optical modes, whose details allow for a quantitative, independent estimation of the nanowire diameter. The results shed light onto the mechanisms of lineshape change in low-dimensional InAs nanostructures, and are useful to help tailoring their electronic and vibrational properties for novel functionalities.     

复杂氧化物中电子相分离的量子调控

复杂氧化物可以呈现出高温超导、庞磁阻以及多铁效应等诸多新奇的物理现象.这类材料中的电荷/自旋/轨道和晶格自由度之间的强耦合相互作用,可以导致多种相互竞争且能量非常接近的电子态的空间共存,这就是电子相分离现象.如果可以将材料的空间尺寸缩小到电子相分离的特征长度,其物理性质甚至电子关联作用本身都会发生根本的变化,从而有可能实现复杂氧化物中的量子调控.本文综述了我们课题组在过去几年中针对复杂氧化物中电子相分离的量子调控取得的进展,内容包括：发现了锰氧化物边缘电子态,通过氧化物微纳加工技术,实现了量子态空间分布的调控,提高了庞磁阻锰氧化物的临界温度;研究了当材料空间尺度小于其电子相分离特征尺度时电子相分离的表现,确定了在电子相分离消失以后体系的磁结构;通过超晶格生长技术调控了材料中的掺杂有序度,对锰氧化物中大尺度的电子相分离的物理机理从实验上给出了解释.     

Coherent electronic properties of coupled two-dimensional quantum dot arrays

In this paper we review our recent study of coherent electronic properties of coupled two-dimensional quantum dot arrays using numerical exact-diagonalization methods on a Mott–Hubbard type correlated tight-binding model. We predict the existence of a novel kind of persistent current in a two-dimensionalisolatedarray of quantum dots in a transverse magnetic field. We calculate the conductance spectrum for resonant tunneling transport through a coherent two-dimensional array of quantum dots in the Coulomb Blockade regime. We also calculate the effective two-terminal capacitance of an array coupled to bias leads.     

Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface.     

Electronic structure of single ultrasmall electron devices and device arrays

Several questions must be addressed to develop the theory of the electronic structure of single ultrasmall (submicrometer) electron devices and the band structures of device arrays. The effects of intradevice Coulomb interactions and correlations on the electronic structure of individual devices have been studied by use of the multi-electron effective-mass Schrodinger equation for interacting few-electron systems confined in a single ultrasmall device. The band structures for noninteracting electrons in device arrays have been studied by performing augmented plane wave calculations for two-dimensional arrays of two-dimensional circular quantum wells and quantum barriers. Results are presented and the impact on the understanding of the electronic structure of devices and arrays is discussed.     

Imaging and tunneling spectroscopy of gold nanocrystals and nanocrystal arrays

Scanning tunneling microscopy (STM) and spectroscopy (STS) have been used to determine the structural and electronic properties of thiol-passivated 29000 amu gold nanocrystals, both individually and in spontaneously formed quasi-two-dimensional arrays. Experiments were performed at temperatures of 300 K, 77 K, and 8 K. Even at room temperature, tunneling through these 1.7 nm nanocrystals is shown to give rise to a Coulomb blockade. At cryogenic temperatures, the spectroscopy of the nanocrystals in arrays and in isolation shows an incremental charging effect (the Coulomb staircase) and evidence is found for quantization of the electronic states. Received: 10 September 1998 / Received in final form: 16 February 1999     

Effects of the local environment on plasmonic coupling of metallic nanotube arrays

We have theoretically investigated the effect of the dielectric core and the dielectric embedding medium separately on the transmission spectra and plasmonic properties of coupled metallic nanotube arrays.It is found that the plasmonic properties of the nanotube arrays are strongly influenced by the presence of the dielectric which induces additional screening charges.We show that instead of one single photonic bandgap for the hollow nanotube arrays placed in air,an additional photonic bandgap arises from t...     

Transport properties of a coupled double-bridged quantum dot arrays model in an ac electric and a magnetic fields

We have studied the transport properties of an ac driving double-bridged quantum dot arrays coupled to electronic leads with a uniform magnetic field applied perpendicularly on it using the method based on Floquet approach. The average current as a function of the driving frequency Ω with different parameters of the system can be obtained by numerically solving the corresponding Floquet equation of the system. We have found that the coupling between the two energy levels of the quantum dots on the same bridge site can cause the current peaks degenerate but the magnetic field can eliminate this degeneracy. Thus it is possible for us to manipulate the position and the number of the resonance current peaks in the coupled double-bridged model by varying some of the parameter of the system.     

纳米线阵列横向输运的热电特性研究

利用包络函数的平面波展开法计算准二维纳米线阵列中的电子态,获得电输运系数表达式.同时,通过合理近似考虑边界散射对声子输运的影响,计算得到了晶格热导率.以Si/Ge体系为例,研究了纳米线阵列横向输运的热电特性.结果表明：结构优值与费米能级、纳米线直径及间距等参数相关.通过对结构参数的调整,纳米线阵列的横向输运可有效提高热电性能. 关键词： 热电性能 纳米线阵列 Seebeck系数 晶格热导率     

THz波段亚波长半导体球形阵列光学特性的数值模拟

利用T-matrix方法对太赫兹波段亚波长半导体球形阵列进行了数值模拟并在数值模拟结果的基础上讨论了其光学特性。在太赫兹波段可以通过掺杂等手段调节半导体的表面等离子体特性。以半导体InSb为例并采用Drude模型,对单个亚波长球及两个或多个亚波长球组成的阵列进行了数值模拟,主要以归一化消光截面为参数,讨论了不同阵元半径、不同球形单元间距、不同单元数目及入射波不同极化方向对阵列特性的影响。     

3D beamforming with ultrasonic divided-ring arrays

Conventional 2D arrays have a set of squared elements whose inter-element spacing is around lambda/2. This arrangement requires an excessive amount of electronic resources for the generation and processing of ultrasonic signals. In this work, the beam properties of a single divided-ring array are analysed theoretically with the goal of producing volumetric images. Divided-ring arrays are based on a circular pattern, which has a lower periodicity than square arrays, and this property allows increasing the element size while keeping the amplitude of the grating lobes at a reasonably low level. The paper emphasises several advantages of ring arrays, suggesting that these apertures are useful for 3D ultrasonic imaging. First, as the element size may increase, the number of elements can be reduced with little loss of emitting area. Second, ring arrays produce beams of large depth of field in both transmission and reception. This can be used to avoid the complexity associated with dynamic focusing.     

Direct measurements of electron thermalization in Coulomb blockade nanothermometers at millikelvin temperatures

We investigate electron thermalization of tunnel junction arrays installed in a powerful dilution refrigerator whose mixing chamber can produce lattice temperatures down to 3 mK. The on-chip Coulomb blockade thermometers (CBT) against other thermometers at the mixing chamber provide direct information on the thermal equilibrium between the electronic system and the refrigerator. We can detect and discriminate between the heat load delivered through the wiring and that produced by the bias current of the CBT-measurement. The basic heat leak limits the minimum of the electronic temperature to slightly below 20 mK.     

Electrical properties of micrometric metallic dots obtained by porous polymeric membranes

We report on the fabrication of micrometric regular metallic arrays obtained by using, as a template, a polymeric membrane with regular pores. The membranes were prepared by embedding hydrophobized silica colloids into a polymer layer and subsequently removing them. We have investigated the electronic transport properties of the metallic arrays as a function of the applied electric field and temperature. Simple current voltage (IV) characteristics present a strong switching behavior with I_ON/I_OFF ratios up to 10⁴. Different temperature dependences of the resistance in the different ranges of the applied electric field have been observed. Finally, the performances of a field effect device (FET), with the conducting channel and insulating layer consisting of a Gold dot array and a STO substrate, respectively, have been investigated. The channel resistivity has been modified at least of two orders of magnitude and a mobility of about 2 cm²/V*s has been extracted by the analysis of the FET transfer curve.     

Electronic states of self-organized InGaAs quantum dots on GaAs (3 1 1)B studied by conductive scanning probe microscope

We have used conductive scanning probe microscope (SPM) in high vacuum and operated at 173 K in order to investigate the electronic properties of self-organized InGaAs quantum dots (QDs) grown on GaAs (3 1 1)B and (0 0 1) substrates. Ordered InGaAs quantum dot arrays on GaAs (3 1 1)B surface were fabricated by atomic-H assisted molecular beam epitaxy (H-MBE), and Si SPM tips coated with Au which warrants electrical conductivity were used to measure simultaneously both the topographic and current images of QDs surface. From the current–voltage (I–V) curves, unique and different plateau features were observed for QDs formed on GaAs (3 1 1)B and (0 0 1) substrates. The results suggested that a high degree of symmetry of InGaAs QDs on (3 1 1)B was responsible for the observed degeneracy of electronic states and artificial atom-like states. We demonstrate that this conductive SPM technique becomes a powerful tool in studies of single electron charging of individual dots.     

ZnO nanorods: morphology control, optical properties, and nanodevice applications

Research interest in ZnO nanostructures derives from their excellent luminescent properties and availability of low cost fabricating and processing, which hold promise for the development of electronic and optoelectronic nanodevices. In this review, we focus on the progress in synthesis, properties and nanodevices of ZnO nanorod (NR) arrays and nanotetrapods (NTPs). Recent work done by the authors are also presented. After a brief introduction to the controlled fabrication methods for the highly-ordered ZnO NR arrays and NTPs, we present some aspects of the fundamental properties, especially optical performance, of ZnO NRs/NTPs. Then, we provide an overview of the applications to functional nanodevices based on individual NR and NTP of ZnO. It is demonstrated that different morphologies of ZnO nanostructures have salient effects on their properties and applications. Although much progress has been achieved in the fundamental and applied investigations of ZnO NRs/NTPs over the past decade, many obstacles still remain, hampering further development in this field. Finally, some longstanding problems that warrant further investigation are addressed.