电子助进化学气相沉积金刚石中衬底温度对发射光谱的影响

采用蒙特卡罗方法,对以CH4/H2为源料气体的电子助进化学气相沉积(EACVD)金刚石中的氢原子(H_α,H_β和H_γ)、碳原子C(2p3s→2p2: λ=165.7 nm)以及CH(A2Δ→X2Π: λ=420～440 nm)的发射过程进行了模拟,研究了衬底温度对各发射谱线以及金刚石膜合成的影响。结果得知,各谱线强度随衬底温度的变化幅度很小,且在衬底表面附近的谱线强度随衬底温度的变化幅度相对于远离衬底的反应区域较大,这表明衬底温度的变化基本上不改变远离衬底的反应区域中反应基团成分,而只对衬底表面附近的反应过程有影响。由此得知,衬底温度对薄膜质量的决定性主要是由于衬底温度改变了衬底表面化学反应动力学过程和表面附近的反应基团的缘故,而不是衬底温度对反应空间中气相成分的影响。     

电子助进化学气相沉积金刚石中的光发射谱特性

采用蒙特卡罗方法,对以CH₄/H₂为源料气体的电子助进化学气相沉积(EACVD)金刚石中的氢原子(H_α, H_β, H_γ)、碳原子C(2p3s2p2∶λ=165.7 nm)以及CH(A2Δ→X2Π∶λ=420～440 nm)的光发射过程进行了模拟,气体温度随空间的变化采用温度梯度变化,研究了不同反应室气压及衬底温度下的光发射谱特性。结果表明,不同衬底温度下各谱线强度均随气压的增大先增大后减小; 当气压较低时,谱线强度随衬底温度的增大而减少,而气压较高时,谱线强度随衬底温度的增大而增大。     

电子助进化学气相沉积金刚石中发射光谱的空间分布

采用蒙特卡罗方法,对以CH₄/H₂为源料气体的电子助进化学气相沉积(EACVD)金刚石中的氢原子(H_α,H_β,H_γ)、碳原子C(2p3s→2p2：λ=165.7 nm)以及CH(A2Δ→X2Π：λ＝420～440 nm)的发射过程进行了模拟,研究了不同CH₄浓度下各发射谱线的空间分布。结果表明,不同CH₄浓度下各发射谱线在反应空间的大部分区域内均随距灯丝距离的增大而增大,而当到达基片表面附近时有所减弱。随着CH₄浓度的增加,H谱线强度减弱,CH与C谱线强度增强。     

电子助进化学气相沉积金刚石中发射光谱的蒙特卡罗模拟

采用蒙特卡罗方法，对源料气体为CH4/H2混合气的电子助进化学气相沉积（EACVD）中 的氢原子(H)、碳原子(C)以及CH基团的发射过程进行了模拟.研究了CH4浓度、反应室气压 和衬底偏压等工艺参数对发射光谱及成膜的影响.研究发现，CH基团可能是有利于金刚石薄 膜生长的活性基团，而碳原子不是；偏压的升高可提高电子平均温度及衬底表面附近氢原子 的相对浓度；通过氢原子谱线可测定电子平均温度并找到最佳成膜实验条件.该结果对EACVD 生长金刚石薄膜过程中实时监测电子平均温度，有效控制工艺条件，生长出高质量的金刚石 薄膜具有重要的意义. 关键词： 蒙特卡罗模拟 金刚石薄膜 发射光谱     

氢原子谱线测定EACVD中电子平均温度

采用蒙特卡罗方法,对以CH₄/H₂混合气体为原料气体的EACVD中氢原子的发射过程进行了模拟。在模拟中考虑了电子与H₂的弹性碰撞及振动激发、分解、电子激发、相应于H_α, H_β, H_γ谱线的激发、电离及分解电离等非弹性碰撞过程;与CH₄的碰撞考虑了弹性动量传输及振动激发、分解、电子激发、电离及分解电离等非弹性碰撞过程。研究了不同CH₄浓度下基片表面上电子平均温度与氢原子谱线相对强度的关系,给出了一种对EACVD中电子平均温度进行实时监测的方法。对于有效控制工艺条件,生长出高质量的金刚石薄膜具有重要意义。     

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H₂/Ar) could strongly influence the gas phase. C₂ is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C₂ and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C₂ is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.     

FTIR监测金刚石薄膜生长的研究

用电子回旋共振等离子体（ECR）系统, 在气压、衬底温度以及微波功率等外界条件不变的情况下,仅改变甲烷浓度制备金刚石薄膜,利用傅里叶红外吸收光谱仪（FTIR）对甲烷浓度为6％的ECR系 统进行实时监测,分析研究了不同沉积时间条件下,甲烷和氢气产生的等离子体对薄膜早期成核、生长过程以及衬底的影响,并结合Raman光谱X射线衍射（XRD）和扫描电镜（SEM）对金刚石薄膜进行 了分析。     

氢原子谱线与高质量金刚石薄膜

采用蒙特卡罗方法,对以CH₄/H₂混合气体为源气体的电子助进热丝化学气相沉积(EACVD)中的氢原子发射过程进行了模拟。在模拟中考虑了电子与H₂的弹性碰撞及振动激发、分解、电子激发(包括H_α, H_β, H_γ谱线的激发)、电离及分解电离等非弹性碰撞过程;与CH₄的碰撞考虑了弹性动量传输及振动激发、分解、电子激发、分解激发(包括H_α, H_β, H_γ谱线的激发)、电离及分解电离等非弹性碰撞过程。研究了不同实验条件下产生的H, CH₃的数目与氢原子谱线相对强度的关系,给出了一种利用氢原子谱线来获得最佳成膜实验条件的方法。对于有效控制工艺条件,生长出高质量的金刚石薄膜具有重要意义。     

Monto Carlo simulation of the behaviour of electrons during electron—assisted chemical vapour deposition of diamond

The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10^-17Vcm². Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.     

Two-dimensional atomic hydrogen concentration maps in hot-filament diamond-deposition environment

This paper reports the two-dimensional mapping of atomic hydrogen concentration with two-photon excited laser induced fluorescence in a multi-wire grid hot-filament chemical vapor deposition reactor. The measurements were made in a diamond film deposition environment under different filament temperatures and wire configurations. The measurement was calibrated with a titration reaction using NO₂ as a titrant. The kinetic gas temperature in the reactor was measured from the Doppler broadening of the Lyman-β transition excited in the fluorescence. The filament temperature was found to have a significant effect on atomic hydrogen production and transfer to the substrate. The axial concentration distributions were compared to a one-dimensional kinetic gas–surface chemistry model with good agreement. The model produced a reasonable estimate for the bulk diamond film growth rate. Received: 25 June 2001 / Revised version: 15 February 2002 / Published online: 2 May 2002     

Influences of Process Parameters on 111-Oriented CVD Diamond Film Growth Under Two-Step Method

The growth of 111-oriented CVD diamond film under a two-step model was simulated at atomic scale by using revised KMC method. The simulation was conducted at various substrate temperatures (1100 K-1400 K) and CH3 radical concentration (0.01 that: (1) The 111-oriented CVD diamond film growth under the two-step model is superior to that under corresponding single-step model, which is in good agreement with the experimental results. (2) Substrate temperature (T _s) and the concentration of CH₃ ([CH₃]) can produce important effects on the film deposition rate, surface roughness and the concentration of atom H embedded in the film. However, both the T _s and [H] should be controlled to a proper range for high quality films.     

Effects of deposition temperature on the structural and morphological properties of SnO2 films fabricated by pulsed laser deposition

Tin oxide (SnO₂) thin films were grown on Si (1 0 0) substrates using pulsed laser deposition (PLD) in O₂ gas ambient (10 Pa) and at different substrate temperatures (RT, 150, 300 and 400 °C). The influence of the substrate temperature on the structural and morphological properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). XRD measurements showed that the almost amorphous microstructure transformed into a polycrystalline SnO₂ phase. The film deposited at 400 °C has the best crystalline properties, i.e. optimum growth conditions. However, the film grown at 300 °C has minimum average root mean square (RMS) roughness of 3.1 nm with average grain size of 6.958 nm. The thickness of the thin films determined by the ellipsometer data is also presented and discussed.     

Investigating the surface morphology and magnetic contrast of epitaxial ferromagnetic structures

The surface morphology of nickel thin films is investigated via atomic force microscopy. The multistage film growth mechanism is found to be dependent on substrate temperature and film thickness. It is shown that conduction electron scattering from the irregularities of the outer and inner surfaces of structures are influenced by the surface morphology and determined by an integrated contribution of the surface’s fluctuation density spectrum. The morphology influence can be decreased under certain growth conditions so that the residual mean free path of conduction electrons can reach 1000 nm, exceeding the film thickness. Epitaxial nanostructures with high electron mobility have been fabricated. Investigation of their magnetic structure has shown that their magnetic domain dimensions are less than the residual mean free path of electrons determined by the surface morphology.     

用甲醇-氢混合气源在不锈钢上生长金刚石薄膜的研究

 利用甲醇-氢（CH₃OH-H₂）混合气体为气源，30 nm厚的无定形硅为过渡层，借助于微波等离子体化学气相沉积（MWCVD）成功地将金刚石薄膜生长在不锈钢上，其最低生长温度可至420 ℃，并且甲醇-氢混合气体比传统的甲烷-氢（Ch₄-H₂）更具优势，测试表明这种金刚石薄膜有希望作为耐磨层在工业上应用。     

SOI基3C-SiC薄膜的光谱表征

本文探索在SOI基片上通过顶层Si直接与碳源反应,反向外延生长3C-SiC薄膜的工艺条件和技术。采用LPCVD技术,以CH4和H2混合气体为反应源,在SOI衬底上生长3C-SiC薄膜。采用X射线衍射分析仪、场发射扫描电子显微镜和傅里叶红外光谱来研究样品的结构和性质;并研究反应前、后样品电压-电容特性的变化。研究结果表明,通过反向外延的方法,能够在SOI基片反向外延生长得到3C-SiC薄膜,但目前的工艺条件有待进一步的改善。     

金刚石簿膜淀积过程中微波等离子体特性

一、引言 在金刚石薄膜的制备过程中,人们往往监测成膜过程中的宏观参量,使其工艺的重复性,优选性受到了很大限制。而随着对膜质量和结构的要求越来越高,人们开始开展对低压下合成金刚石机理的研究,但至今未见系统地研究宏观参量与等离子体参量方面的工作报道。     

模板对异构体选择性生长的动力学控制作用与化学气相沉积金刚石的生长机理

阐述了模板的动力学控制作用对大尺度有序结构特别是亚稳相的生长，对自由能相差很小的异构体的选择生长所具有的重要作用.汲取现有金刚石生长理论的合理思想，以模板概念为基础给出了对化学气相沉积(CVD)过程的动力学热力学综合描述：1)碳原子在碳氢化合物中的化学势高于固相碳，气相碳氢化合物的碳原子有可能落到化学势较低的固态碳的各种异构体.2)气相碳通过表面反应实现向固相碳的转化.3)表面的模板作用是控制气相碳原子转换方式的主要动力学因素，不同的表面(石墨各种取向的表面及金刚石不同取向的表面)选择了落入其上的碳原子的结构方式及能量状态.4)因此,衬底的不同区域可发生几种不同的独立的表面反应过程,这些反应对应于不同表面的生长.5）而这些表面反应的方向性及速度受表面临域热力学因素的影响，反应的方向性决定了某种晶面是生长或刻蚀，在特定的温度、压强及各种气体分压下可以实现金刚石的生长和石墨的刻蚀.6)衬底局域晶格结构及键价结构和衬底表面气相的温度、压强及各种气体分压等热力学条件共同决定了成核的临界条件.7）与外界有能量和物质交换的等离子体系统，以及气相中发生的一系列化学反应，仅起到了维持某种固相表面生长所需要的非平衡热力学条件和化学条件的作用.金刚石和石墨表面具有的模板动力学控制作用，在特定热力学条件下主导自身外延层的生长方式；异质衬底的某些局域微观结构可以作为新相生长成核的局域模板；不同材料、不同的处理方法、及不同的化学环境下的衬底具有不同的局域微观结构，从而决定了多晶薄膜的取向优势. 关键词： 模板 异构体 选择性生长 金刚石薄膜     

EACVD中用氢原子谱线测定电子平均能量

采用蒙特卡罗方法，对EACVD中氢原子的发射过程进行了模拟。给出了由氢原子谱线测定电子平均能量的方法，结果对EACVD生长金刚石薄膜过程中实时监测电子平均能量，进而可以有效地控制工艺条件，生长出高质量的金刚石薄膜具有重要意义。     

The effects of temperature on nanocrystalline diamond films deposited on WC-13 wt.% Co substrate with W-C gradient layer

A tungsten-carbide gradient coating (WCGC) was prepared by reactive sputtering as an intermediate layer on the cemented carbide, WC-13 wt.% Co, substrate to improve the nucleation, smoothness and adhesion of diamond film. The diamond film was deposited by hot filament chemical vapor deposition (HFCVD). The effects of the substrate temperature on the WCGC and the diamond film were investigated. The characterization of the WCGC and the diamond films was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), micro-Raman spectroscopy and Rockwell hardness indentation. It is found that the WCGC plays an important role in improving the nucleation, smoothness and adhesion of diamond film; and the diamond films exhibit better quality and adhesion as substrate temperature increases during the CVD processes.     

Cavity ring-down spectroscopy of CH and CD radicals in a diamond thin film chemical vapor deposition reactor

A mixture of H₂ and CH₄ is passed over a hot-wire tungsten filament in a diamond thin film chemical vapor deposition reactor. The resulting CH radicals are measured in absorption using cavity ring-down spectroscopy (CRDS). The concentration of the CH radicals increases as the filament is approached. The rotational temperature measurements indicate a large temperature discontinuity between the filament and the CH in the gas phase. The pathways for CH production were investigated by replacing H₂ by D₂ in the feed gas mixture, which resulted in the exclusive production of CD. From this observation it is concluded that rapid H/D isotope exchange dominates in the gas phase. Nonperiodic temporal oscillations in the CH concentration are observed when a rhenium filament is used in place of a tungsten filament. The oscillations are attributed to the nonperiodic changes in the amount of carbon at the filament surface. Received: 21 August 2000 / Accepted: 23 August 2000 / Published online: 23 May 2001