Preparation and structural stability investigation of CoN/CN soft X-ray multilayers

The structural stability of heat-treated CoN/CN soft X-ray multilayers fabricated by dual-facing-target sputtering has been investigated by using complementary measurement techniques. The high temperature annealing results imply that the destructive threshold of the Co/C multilayers is improved by 100–200 degrees centigrade through doping with N. The low-angle X-ray diffraction of CoN/CN soft X-ray multilayers indicates that the period expansion of the multilayers is only 4 % at 400°C, and the interface pattern still exists even if they were annealed at 700°C. The Raman spectra analyses give the evidence that the formation of the sp³ bonding in the CN sublayers can be suppressed effectively by doping N with atoms, and thus the period expansion resulting from the changes in the density of CN layers can be decreased considerably. The X-ray photoelectron spectra analyses present the information of the existence of the strong covalent bonding betweenC andN atoms, and the ionic bonding between Co and N atoms, which can slow down the tendency of the structural relaxation. The interstitial N atoms decrease the mobility of Co atoms, and thus the fcc-Co and hcp-Co coexist even though the annealing temperature is much higher than the phase transformation temperature of 420°C, leading to the suppression of the grain growth.     

Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin Films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the T0_B and LO_B phonon modes from the boundary layer weakens while that of the E₂ phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.     

Ag/Si multilayers with nanometer sized particles of silver during annealing process

Thein situ low angle X-ray diffraction and transmission electron microscopy were used to monitor the interdiffusion characteristics as well as the microstructure in Ag/Si multilayers with modulated wavelength 7. 64 nm when annealing from 323 to 573 K. The interdiffusion mechanism of Ag/Si multilayers with immiscibility is different from that of other metal/Si multilayers which are miscible. Phase separation takes place at 323 K, then silicon atoms diffuse into silver sublayers through silver grain boundaries and separate silver sublayers into nanometer sized silver particles gradually at higher temperature. The mean size of silver particles is about 5 nm. The activation energy and frequency factor are determined to be 0.24 eV and 2.02 x⁻²⁰m²/s, respectively. An erratum to this article is available at .     

Optical absorption of Co2+ doped NH4Cl: Phase transformation studies

The absorption spectrum of Co²⁺ doped NH₄Cl has been studied from the room temperature to the liquid nitrogen temperature. A sudden change in the spectrum is observed between 243° K and 233° K which is attributed to the phase transition in the crystal. From the observed spectrum it is suggested that Co²⁺ goes in interstitially as well as substitutionally. Both the types of centers exist at room temperature, but with decrease in temperature substitutional ions migrate to interstitial sites, the process being stimulated at the phase transformation point so that the 77° K spectrum seems to be mostly due to the interstitial centers. The 77° K spectrum is analyzed in the approximation of octahedral symmetry for interstitial ions and the band positions are fitted fairly well with B = 870 cm.^?1 Dq = 850 cm.^?1 and C = 4·4 B. A blue shift of about 100 cm.^?1 is observed for⁴T₁ (P) band at the phase transition which is attributed to the increase in Dq value with the anomalous lattice contraction at the phase transition. The decrease in the lattice parameter calculated from this blue shift is around 0·4% which is in good agreement with the results of X-ray measurements. Two possible models for the interstitial complex are examined and the one with fourfold chlorine coordination associated with two neutral water molecules at the first neighbour (NH₄)⁺ site lying along < 100> direction is suggested to be more probable.     

Angle- and time-resolved mass spectrometric study on pulsed laser ablation of an La-Ca-Mn-O target

Pulsed laser ablation (PLA) of an La₂O₃-CaO-MnO₂ target at 532 nm has been investigated by angle- and time-resolved quadrupole mass spectrometry. The results show that different kinds of metal oxides as well as metal ions and atoms are produced during the ablation at high laser fluence. The measured TOF spectra are fitted by multicomponent Maxwell-Boltzmann distribution with a stream velocity, which gives the translational energy of 6.34 and 0.43 eV for Mn⁺ ions and Mn atoms, respectively. It implies that ablated ions are mainly formed via a nonthermal process, while the neutral atoms mainly via a thermal one. The angular distributions of Mn + ions and Mn atoms can be described by a cos ⁿ θ and a bicosine function a cosθ+ (1-a)cos ⁿ θ, respectively. Possible mechanisms of laser ablation of La-Ca-Mn-0 are discussed. Project supported by the National Natural Science Foundation of China (Grant No. 29683001).     

Rotational analysis of the1Π-X1Σ system of AsN

The¹Π-X ¹Σ bands of AsN were excited by means of radio-frequency discharge through nitrogen and helium and traces of arsenic. The 0-0 band (2784.25 Å) and the 0-1 band (2868.74 Å) were photographed in the third order of a 6.6 meter concave grating spectrograph at a dispersion of 0.38 Å/mm. and analysed for their rotational structure. Perturbations observed in the¹Π state were studied in detail.     

A linear-time algorithm for solving the molecular distance geometry problem with exact inter-atomic distances

We describe a linear-time algorithm for solving the molecular distance geometry problem with exact distances between all pairs of atoms. This problem needs to be solved in every iteration of general distance geometry algorithms for protein modeling such as the EMBED algorithm by Crippen and Havel (Distance Geometry and Molecular Conformation, Wiley, 1988). However, previous approaches to the problem rely on decomposing an distance matrix or minimizing an error function and require O(n²) to O(³) floating point operations. The linear-time algorithm will provide a much more efficient approach to the problem, especially in large-scale applications. It exploits the problem structure and hence is able to identify infeasible data more easily as well.     

Low temperature measurements of electrical activity and Hall mobility of boron implanted silicon

This work investigates the electrical behaviour of boron implanted silicon at temperatures from 300k to 4.2k by means of Hall effect and sheet resistivity measurements. The ion energy is 100 Kev and the doses are 1×10¹², 2×10¹², 5×10¹², 1×10¹³, 2×10¹³, 5×10¹³, 1×10¹⁴, 2.5×10¹⁴, 5×10¹⁴, and 1×10¹⁵ ions/cm².The most accurate information about the electrical activity can be only found from measurements at low temperatures. Furthermore, a reverse annealing takes place in the annealing temperature range from 500 to 600 °C, and this range is found to be independent of the ion dose. It is also clear that the electrical activity depends strongly on the annealing temperatures, especially for annealing temperatures greater than 600 °C. For ion dose 1×10¹⁵ ions/cm² complete activity can be obtained by annealing up to 900 °C.

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Zusammenfassung Die vorliegende Arbeit beschreibt Untersuchungen über das elektrische Verhalten des Borimplantierten Siliziums mittels Hall Effekt- und Schicht-Widerstand-Messungen im Temperaturbereich von 300k bis 4.2k. Die Ionenenergie betrug dabei 100 Kev, und die Ionendosen waren 1×10¹², 2×10¹², 5×10¹², 1×10¹³, 2×10¹³, 5×10¹³, 1×10¹⁴, 2.5×10¹⁴, 5×10¹⁴, und 1×10¹⁵ Ionen/cm².Es wurde festgestellt, daß genauere Informationen über die Aktivierung der implantierten Dopanden nur aus Tieftemperatur-Messungen erhalten werden können. Weiterhin findet man ein negatives Ausheilen im Bereich von 500 bis 600 °C. Die Grenzen dieses negativen Ausheilbereiches sind von den Ionendosen unabhängig. Es ist eindeutig, daß die Aktivierung der Dopanden sehr stark von der Ausheiltemperatur abhängig ist, insbesondere für Ausheiltemperaturen größer als 600 °C. Für die Ionendosis 1×10¹⁵ Ionen/cm² kann bei einer Ausheiltemperatur von 900 °C eine vollständige Aktivierung erreicht werden.

     

Numerical simulation of a three dimensional quantum dot

We consider the problem to compute relevant energy states and corresponding wave functions of a three dimensional semiconductor quantum dot. Let Ω_q ⊂ ℝ³ be a domain occupied by the quantum dot, which is embedded in a matrix Ω_m of different material. A typical example is an InAs pyramidal quantum dot embedded in a cuboid GaAs matrix. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)     

Paramagnetic resonance studies of Cu2+ doped in NH4Br

Electron Paramagnetic Resonance studies of Cu²⁺ doped in NH₄Br single crystals have been carried out for the first time. The room temperature data reveal that Cu²⁺ ions go predominantly to interstitial sites having square planar co-ordination of four Br^? ions. For this type of complexes the bromine: superhyperfine structure: is observed on the normal hyperfine structure lines of copper. Existence of other weak spectra indicates that a relatively few Cu⁺⁺ ions go substitutionally to (NH₄)⁺ ions, and are probably associated with a first or a second nearest neighbour cation vacancy, among the two, the latter being more predominant. However, the low temperature studies corresponding to the tetragonal phase of NH₄Br indicate that a number of Cu²⁺ ions at interstitial sites get readjusted to the lattice sites after phase transformation. The spectra in both the phases are analysed by the usual spin Hamiltonian method.     

Flexible Gabor-wavelet atomic decompositions for L 2-Sobolev spaces

In this paper we present a general construction of frames, which allows one to ensure that certain families of functions (atoms) obtained by a suitable combination of translation, modulation, and dilation will form Banach frames for the family of L²-Sobolev spaces on ℝ of any order. In this construction a parameter α∈[0,1) governs the dependence of the dilation factor on the frequency parameter. The well-known Gabor and wavelet frames (also valid for the same scale of Hilbert spaces) using suitable Schwartz functions as building blocks arise as special cases (α=0) and a limiting case (α→1), respectively. In contrast to those limiting cases, it is no longer possible to use group-theoretical arguments. Nevertheless, we will show how to constructively ensure that for Schwartz analyzing atoms and any sufficiently dense but discrete and well-structured family of parameters one can guarantee the frame property. As a consequence of this novel constructive technique, one can generate quasicoherent dual frames by an iterative algorithm. As will be shown in a subsequent paper, the new frames introduced here generate Banach frames for corresponding families of α-modulation spaces. Mathematics Subject Classification (2000) 42C15, 46S30, 49M27, 65T60     

Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

This paper reported the effect of the weak damage in the Al_0.25Ga_0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1 × 10¹⁴ to 5 × 10¹⁵ cm^-2. The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial Al_0.25Ga_0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling (RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.     

Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

This paper reported the effect of the weak damage in the Al_0.25Ga_0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1 × 10¹⁴ to 5 × 10¹⁵ cm^-2. The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial Al_0.25Ga_0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling (RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.     

Sur la topologie d'une famille de pinceaux de germes d'hypersurfaces complexes

We study the pencils of germs of complex hypersurfaces defined by the couples (ƒ, g): (C^{n+1, 0}) → (C², 0) without blowing-up in codimension 0. We approximate the equisingularity set of such a pencil in terms of the tangent directions to the discriminant germ of the morphism (ƒ, g). We next compare the monodromy modules of the generic member of this pencil with those of the atypical ones.     

Lois de sortie et semi-groupes basiques

Let ℙ=(P ^t ) ^t<0 be a semigroup of kernel and letm be an excessive reference measure for ℙ. In this work we prove that ℙ ism-basic if and only if everym.a.e. finite purely excessive function is represented by a unique exit law for ℙ. In this case we deduce some applications about natural densities, energie functionnal and invariant functions for the time-space semigroup of ℙ.      

Analysis of Static Simulated Annealing Algorithms

Generalized hill climbing (GHC) algorithms provide a framework for modeling local search algorithms to address intractable discrete optimization problems. This paper introduces a measure for determining the expected number of iterations to visit a predetermined objective function level, given that an inferior objective function level has been reached in a finite number of iterations. A variation of simulated annealing (SA), termed static simulated annealing (S²A), is analyzed using this measure. S²A uses a fixed cooling schedule during the algorithm execution. Though S²A is probably nonconvergent, its finite-time performance can be assessed using the finite-time performance measure defined in this paper.     

Best Approximation with Walsh Atoms

We consider the approximation in L ² R of a given function using finite linear combinations of Walsh atoms, which are Walsh functions localized to dyadic intervals, also called Haar—Walsh wavelet packets. It is shown that up to a constant factor, a linear combination of K atoms can be represented to relative error ɛ by a linear combination of orthogonal atoms. In finite dimension N, best approximation with K orthogonal atoms can be realized with an algorithm of order . A faster algorithm of order solves the problem with indirect control over K. Therefore the above result connects algorithmic and theoretical best approximation. Date received: July 6, 1995. Date revised: January 8, 1996.     

Sparse Components of Images and Optimal Atomic Decompositions

Recently, Field, Lewicki, Olshausen, and Sejnowski have reported efforts to identify the ``Sparse Components' of image data. Their empirical findings indicate that such components have elongated shapes and assume a wide range of positions, orientations, and scales. To date, sparse components analysis (SCA) has only been conducted on databases of small (e.g., 16 by 16) image patches and there seems limited prospect of dramatically increased resolving power. In this paper, we apply mathematical analysis to a specific formalization of SCA using synthetic image models, hoping to gain insight into what might emerge from a higher-resolution SCA based on n by n image patches for large n but a constant field of view. In our formalization, we study a class of objects \cal F in a functional space; they are to be represented by linear combinations of atoms from an overcomplete dictionary, and sparsity is measured by the ℓ <sup>p</sup> -norm of the coefficients in the linear combination. We focus on the class \cal F = \sc Star <sup>α</sup> of black and white images with the black region consisting of a star-shaped set with an α -smooth boundary. We aim to find an optimal dictionary, one achieving the optimal sparsity in an atomic decomposition uniformly over members of the class \sc Star <sup>α</sup> . We show that there is a well-defined optimal sparsity of representation of members of \sc Star <sup>α</sup> ; there are decompositions with finite ℓ <sup>p</sup> -norm for p > 2/(α+1) but not for p < 2/(α+1) . We show that the optimal degree of sparsity is nearly attained using atomic decompositions based on the wedgelet dictionary. Wedgelets provide a system of representation by elements in a dyadically organized collection, at all scales, locations, orientations, and positions. The atoms of our atomic decomposition contain both coarse-scale dyadic ``blobs,' which are simply wedgelets from our dictionary, and fine-scale ``needles,' which are differences of pairs of wedgelets. The fine-scale atoms used in the adaptive atomic decomposition are highly anisotropic and occupy a range of positions, scales, and locations. This agrees qualitatively with the visual appearance of empirically determined sparse components of natural images. The set has certain definite scaling properties; for example, the number of atoms of length l scales as 1/l , and, when the object has α -smooth boundaries, the number of atoms with anisotropy \approx A scales as \approx A ^α-1 . August 16, 1999. Date revised: April 24, 2000. Date accepted: April 4, 2000.     

Visible light emission in collisions between O5+ ions and He atoms

Visible light emission spectra during collisions between O⁵⁺ ions and He atoms in the range of 200–800 nm at different projectile energies (4.06–5.31 keV-u⁻¹) have been measured. Emission spectra show that there are three channels of excitation in the O⁵⁺-He collision system: (i) single-electron capture into excited states; (ii) double-electron capture into excited states; (iii) direct excitation of target atoms. There are transitions between states with comparably high quantum numbersnl. The absolute emission cross-sections of every spectral line are calculated. The relations of these cross-sections with the energy of the projectiles are studied. Project supported by the National Natural Science Foundation of China and Chinese Association for Atomic and Molecular Dada.