Thermoelectric properties of Pb<Subscript>0.22</Subscript>Sn<Subscript>0.78</Subscript>Te<Ge> solid solution

Temperature dependences of thermoelectric parameters of the Pb_0.22Sn_0.78Te〈Ge(0.5 at%)〉 solid solution in the temperature range 140–440 K are investigated with the purpose to determine the perspectiveness of these solutions as a material for thermoelements.     

Dielectric properties of thin ferroelectric Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> films deposited by thermal evaporation

The structure, microstructure, and temperature and field dependences of the dielectric properties of thin (0.5–8.0μm) Sn₂P₂S₆ ferroelectric films deposited onto glass and aluminum foil substrates by thermal vacuum evaporation in a quasi-closed volume are studied. The film-thickness and frequency dependences of the dielectric properties and the unipolarity of the C–V characteristics are explained by the presence of near-surface Schottky-type barrier layers.     

Effect of hydrostatic compression on the indium-impurity-induced superconducting transition in Pb<Subscript>0.3</Subscript>Sn<Subscript>0.7</Subscript>Te

This paper reports on a study of the low-temperature conductivity and parameters of the superconducting state, namely, the critical temperature T _c and the second critical magnetic field H_c2, in the (Pb_0.3Sn_0.7)_0.95In_0.05Te solid solution under hydrostatic pressure P ≤ 9 kbar at T = 4.2 K. The choice of this material has been motivated by the fact that, according to earlier observations, it undergoes a superconducting transition at T _c ∼ 2.3 K, i.e., close to the maximum value T _c ∼ 2.9 K found for the (Pb _z Sn_{1 − z} )_0.95In_0.05Te solid solutions with a lead content z ∼ 0.15–0.25. It has been demonstrated that an increase in the pressure to P ≤ 9 kbar leads to a bell-shaped dependence T _c (P). The observed dependences are assigned to the effect of hydrostatic compression on the band structure of the solid solution and indicate a shift in the position of the Fermi level E _F with increasing pressure within the impurity band of the In quasi-local states. In this case, E _F passes through a maximum in the density of impurity states at P = 3–5 kbar.     

Observation of Bose condensation in (Pb<Subscript>0.4</Subscript>Sn<Subscript>0.6</Subscript>)<Subscript>0.86</Subscript>In<Subscript>0.14</Subscript>Te semiconductor solid solutions using Mössbauer spectroscopy

⁷³As(⁷³Ge) Mössbauer emission spectroscopy is used to ascertain that the transition of the (Pb_0.4Sn_0.6)_0.86In_0.14Te solid solution to a superconducting state is accompanied by a change in electronic density at the cation sites, and spatial inhomogeneities in the Bose condensate of Cooper pairs are revealed.     

Exponential Increase in the Resistivity upon Cooling and Superconductivity in Indium-Doped Pb<Subscript>0.45</Subscript>Sn<Subscript>0.55</Subscript>Te

We have analyzed the temperature and magnetic-field dependences of resistivity ρ(T, H) of semiconducting compound Pb_0.45Sn_0.55Te doped with 5 at % In under a hydrostatic compression at P < 12 kbar. It is found that the temperature dependence ρ(T) at all pressures at T < 100 K is exponential with the activation energy decreasing upon an increase in pressure; this is accompanied with a superconducting transition on the ρ(T) and ρ(H) dependences at P > 4.8 kbar at T > 1 K (T _c = 1.72 K at a level of 0.5ρ _N at P = 6.8 kbar). We consider the model describing the low-temperature “dielectrization” of the semiconducting solid solution and the formation of the superconducting state upon an increase in the hydrostatic compression P > 4 kbar.     

On the correlation between supercooling,superheating and kinetic arrest in a magnetic glass Pr<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>Mn<Subscript>0.975</Subscript>Al<Subscript>0.025</Subscript>O<Subscript>3</Subscript>

We report a quantitative investigation of the magnetic field-temperature phase diagram by taking into account a simple phenomenological model arising out of the interplay of kinetic arrest and thermodynamic transitions in a magnetic glass Pr_0.5Ca_0.5Mn_0.975Al_0.025O₃, through magnetization measurements. Such studies are necessary as kinetic arrest plays an important role in the formation of “magnetic glasses”, which has been observed in systems undergoing first order magnetic phase transitions. It has been shown that disorder in a system results in the formation kinetic arrest (H _K ,T _K ) band, like supercooling (H ^*,T ^*) and superheating (H ^**,T ^**) band. Quantitative proofs are given to show that (H _K ,T _K ) band is anticorrelated with (H ^*,T ^*) and (H ^**,T ^**) bands, while the later two are correlated among themselves. Analysis of time dependence of magnetization at different temperatures is carried out to establish the fact that the kinetic arrested state is different from the supercooled state.     

Weak antilocalization in thin films of the Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> solid solution

A technology has been developed for the preparation of thin films of the Bi₂Te_2.7Se_0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.     

Magnetostructural transformations in Ni<Subscript>51</Subscript>Mn<Subscript>36</Subscript>Sn<Subscript>13</Subscript> Heusler alloy thin films

In this paper we report structural, magnetic and transport properties of strongly textured Ni₅₁Mn₃₆Sn₁₃ thin films. The off-stoichiometric Heusler alloy films with 200 nm thickness were sputter-deposited on a MgO(100) substrate at 500 K and after annealed at 1000 K in UHV conditions. The textured growth was confirmed by x-ray diffraction in Bragg-Brentano geometry. The temperature dependence of the magnetic properties was measured by VSM and FMR methods. The electron transport measurements were carried out in function of temperature in 0 Oe and 50 kOe fields. All measurements corroborate the existence of the martensitic transformation in the film. Furthermore, transport measurements reveal an influence of the magnetic field on the transition temperature.     

The Optical Gain of a Si-Based Lattice-Matched Si<Subscript>0.15</Subscript>Ge<Subscript>0.621</Subscript>Sn<Subscript>0.229</Subscript>/Si<Subscript>0.637</Subscript>Ge<Subscript>0.018</Subscript>Sn<Subscript>0.345</Subscript> MQW Laser

We study the optical-gain characteristics of a Si-based MQW laser, in which the active region has 20 Si_0.15Ge_0.621Sn_0.229 quantum wells separated by 20 Si_0.637Ge_0.018Sn_0.345 barriers. We reach a maximum optical gain of 2300 cm^?1 with an estimated carrier concentration of 5·10¹⁸ cm^?3, which is equivalent to the transparent current density equal to 0.5 kA/cm². Furthermore, we discuss the optical confinement factor and modal gain. The modal gain depends sensitively on the number of the quantum wells (QWs), and this fact restricts the optical confinement factor. The modal gain of the model we proposed can reach 1500 cm^?1 at the injection current density equal to 3 kA/cm². We hope that our results show the possibility to obtain a Si-based near-infrared laser.     

High-temperature heat capacity of stannates Pr<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript> and Nd<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Oxide compounds Pr₂Sn₂O₇ and Nd₂Sn₂O₇ have been obtained by solid-phase synthesis. The effect of temperature on the heat capacity of Pr₂Sn₂O₇ (360–1045 K) and Nd₂Sn₂O₇ (360–1030 K) has been studied using differential scanning calorimetry. The thermodynamic properties of the compounds (changes in enthalpy, entropy, and the reduced Gibbs energy) have been calculated by the experimental data of C_p = f(T).     

Ion transfer in solid solutions of Cu<Subscript>2</Subscript>Se and Ag<Subscript>2</Subscript>Se superionic conductors

The cationic conductivities of Cu₂Se and Ag₂Se superionic conductor solid solutions in the composition region from Cu₂Se to Cu_0.7Ag_1.3Se are measured. It is demonstrated that the activation energy of ionic conduction depends only slightly on the chemical composition, varies from 0.14 to 0.17 eV, and exhibits a weakly pronounced maximum for the Ag_0.44Cu_1.56Se solid solution. The ionic Seebeck coefficients are measured for the Ag_0.23Cu_1.757Se solid solution. The heat of cation transfer in this solution is found to be equal to 0.144±0.014 eV from the Seebeck coefficients.     

Current-voltage characteristics of polycrystalline (La<Subscript>0.5</Subscript>Eu<Subscript>0.5</Subscript>)<Subscript>0.7</Subscript>Pb<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> at low temperatures

The current-voltage characteristics of the polycrystalline substituted lanthanum manganite (La_0.5Eu_0.5)_0.7Pb_0.3MnO₃ have been measured at temperatures close to the metal-insulator transition temperature and at low temperatures. In both cases, the current-voltage characteristics exhibit nonlinear properties that are strongly dependent on the strength of an applied magnetic field. The mechanisms responsible for the nonlinear properties at these temperatures are found to be different: near the metal-insulator transition, the current-voltage characteristics are determined by the phase layering inside granules, while at low temperatures, they are determined by tunneling of carriers through insulating interlayers of the granules.     

Effect of thermal treatment on the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution thin films

The effect thermal treatment in a vacuum has on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution thin films obtained via ion-beam sputtering in an argon atmosphere is considered. It is established that the specific resistance and thermopower are determined by the type and concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution. The power factor values are found to be comparable to those of nanostructured materials based on (Bi,Sb)₂(Te,Se)₃ solid solutions.     

Evolution of the optical properties of Pb<Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>Sc<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (PBSN-6) solid solution single crystals caused by a static electric field

The electric-field-induced variation of the optical properties (small-angle light scattering, birefringence) of PBSN-6 solid solutions was studied. It was found that in the absence of an electric field, the cubic nonpolar matrix contains, at temperatures below the dielectric permittivity maximum, spontaneously polarized regions of the ferroelectric phase not less than 10⁴ Å in size. It was shown that a weak electric field (～0.4 kV/cm) is capable of inducing a kinetic phase transition to the ferroelectric state, with the temperature of this transformation depending on the sample heating rate. The destruction of the induced state was accompanied by a sharp peak in the temperature dependence of the small-angle light scattering intensity (indicating the percolation nature of the transition) and was independent of the sample heating rate. The boundaries of stability of the induced state in various modes of application of an external electric field were determined, and the E-T phase diagram was constructed.     

Electromechanical properties of Pb<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> piezoelectric crystals grown from solution in a melt

Single crystals of lead gallium germanate Pb₃Ga₂Ge₄O₁₄ are grown from their own solution melts. The propagation of bulk acoustic waves is investigated, and the elastic, piezoelectric, and dielectric constants are calculated. The temperature dependences of the dielectric constants of this compound are analyzed.     

Conductivity of nanostructured India oxide films containing Co<Subscript>3</Subscript>O<Subscript>4</Subscript> or ZrO<Subscript>2</Subscript>

The effect of additives of cobalt and zirconium oxides on the conductivity of nanostructured composites based on indium oxide is studied. It is shown that addition of up to 20 wt % ZrO₂ to In₂O₃ leads to a sharp decrease in the conductivity of the composite. For the Co₃O₄?In₂O₃ system, the conductivity decreases up to a Co₃O₄ content of 60 wt %, after which it increases. At a Co₃O₄ content in the Co₃O₄?In₂O₃ system of up to 60 wt %, n-type conduction takes place, changing to p-type at 80 to 100 wt % Co₃O₄. Zirconium oxide exhibits practically no n-type conduction, so electric current in the ZrO₂?In₂O₃ system flows through In₂O₃ nanocrystals, i.e., n-type conduction takes place. Possible causes of the observed effects are considered.     

Properties of nanostructured and amorphous films in the TiB<Subscript>2</Subscript>-B<Subscript>4</Subscript>C system

Nanostructured and x-ray-amorphous films in the TiB₂-B₄C system are prepared by nonreactive magnetron sputtering in the absence and presence of an additional external magnetic field with inductions of up to 0.3 T. The properties of the deposited films, such as the grain size, phase composition, dominant texture, roughness, and hardness, are investigated using transmission electron microscopy, microdiffraction, x-ray powder diffraction, atomic force microscopy, and microdurometry. The specific features of the phase diagram as applied to films and the effect of application of the magnetic field on their properties are discussed.     

Transport characteristics of phonons and the specific heat of Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:ZrO<Subscript>2</Subscript> solid solution single crystals

The temperature dependences of the specific heat and transport characteristics of phonons in single crystals of yttrium-stabilized zirconium dioxide Y₂O₃:ZrO₂ solid solutions have been studied. It has been shown that the temperature dependences of the specific heat at T > 5 K are almost identical at the degree of stabilization of a solid solution with an Y₂O₃ content of 5–20 mol %. Differences in the temperature dependences of the specific heat of samples from different sources at T < 5 K are due to the presence of low-energy two-level systems. The features of the transport characteristics of thermal phonons at liquid helium temperatures reflect not only the presence of two-level systems but also the scattering of phonons on low-dimensional domains of another phase coherently conjugate to the main phase of the Y₂O₃:ZrO₂ solid solution.     

Optical studies of delayed relaxation in Pb<Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>Sc<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (PBSN-6) solid solutions

The temperature dependences of the permittivity, birefringence, optical transmittance, and small-angle light scattering and their variations with time are studied for single crystals of the Pb_0.94Ba_0.06Sc_0.5Nb_0.5O₃ relaxor (PBSN-6) in the heterophase region of coexistence of different phases. It is shown that an electric field induces a phase transition to the ferroelectric state, which manifests itself within some time (delay time τ) after application of the electric field to the crystal. The observed dependence of the temperature of this transition on the heating rate of the sample and the changes in the birefringence and small-angle light scattering intensity with time confirm the kinetic character of the induced transition. Temperature dependences of the delay time τ for different electric fields are constructed. It is revealed that, at low temperatures, the delay time τ decreases with increasing temperature. This agrees with the behavior of τ in classical relaxors. At the Vogel-Fulcher temperature, however, one observes that dτ/dT reverses sign and τ increasing as the temperature continues to increase. This anomalous behavior of τ in the heterophase region is accounted for by the coexistence of the cubic relaxor and rhombohedral macrodomain phases.     

Acoustic attenuation in ferroelectric Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals

The temperature and frequency dependencies of sound attenuation for the proper uniaxial ferroelectric Sn₂P₂S₆, which has a strong nonlinear interaction of the polar soft optic and fully symmetrical optic modes that is related to the triple well potential, were studied by Brillouin spectroscopy. It was found that the sound velocity anomaly is described in the Landau-Khalatnikov approximation with one relaxation time. For explanation of the observed temperature and frequency dependencies of the sound attenuation in the ferroelectrric phase, the accounting of several relaxation times is needed and, for quantitative calculations, the mode Gruneisen coefficients are more appropriate as interacting parameters than are the electrostrictive coefficients. Relaxational sound attenuation by domain walls also appears in the ferroelectric phase of Sn₂P₂S₆ crystals.