Ferromagnetic resonance and magnetic microstructure in nanocomposite films of Cox(SiO2)1 ? x and (CoFeB)x(SiO2)1 ? x

This paper reports on the results of the investigation of the relation between the magnetic microstructure and ferromagnetic resonance (FMR) in ferromagnetic metal-insulator composites by using granular alloys (Co₄₁Fe₃₉B₂₀) _x (SiO₂)_{1 − x} and Co _x (SiO₂)_{1 − x} as an example. A comparative analysis of the properties of FMR spectra and parameters of random magnetic anisotropy leads to correlations between these quantities. It has been found that the main mechanism that determines the FMR line width in the films under investigation is the exchange narrowing mechanism.     

Magnetic and band parameters of (3HgS)1–x(Al2S3)x (x = 0.5) crystals doped with manganese

Investigations of magnetic susceptibility (χ) of (3HgS)_1–x (Al₂S₃) _x (x = 0.5) crystals doped with manganese investigated by the Faraday method in the range of Т = 77–300 K and Н = 0.25–4 kOe demonstrate that peculiar magnetic properties can be due to the presence of clusters of the Mn–S–Mn–S type in these crystals. Based on the investigation of kinetic coefficients of the crystals performed for Т = 77–300 K and Н = 0.5–5 kOe, it is established that the crystals demonstrate conductivity of the n-type, and their electric conduction only very slightly depends on the temperature and shows a maximum, the Hall coefficient is independent of the temperature, while the temperature dependences of mobility exhibit a maximum. Using the concentration dependence of the effective electron mass at the Fermi level, the width of the forbidden band, the matrix element of interatomic interaction, and the effective mass on the conduction-band bottom are obtained. Based on investigations by optical methods, the presence of direct optical interband transitions in the crystals is established and the value of the optical forbidden band (at Т = 300 K) is determined.     

Optical properties of (In2Se3)1–x·(CuIn5Se8)x solid solutions

Single crystals of In₂Se₃ and CuIn₅Se₈ compounds and (In₂Se₃)_1–x·(CuIn₅Se₈)_x solid solutions have been grown from the melt using the Bridgman method and their composition and structure determined. It is shown that the crystals have n-type conductivity. Their transmission spectra were studied in the self-absorption edge region at 80 and 295 K. Based on the spectral measurements, the band gap width (E_g) was determined and the band gap concentration dependences were plotted. It is found that E_g varies with the x composition nonlinearly. Using the dielectric model of Van Vechten–Bergstresser and the Hill–Richardson pseudo potential model, E_g(x) was calculated theoretically.     

Electrical and magnetic properties of [(CoFeZr)x(Al2O3)1 ? x/(α-SiH)]n multilayer structures

The concentration dependences of the electrical resistivity and complex permeability of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures and (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites have been studied. It has been established that introduction of a semiconductor interlayer into the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites substantially decreases the electrical resistivity of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures. The concentration dependences of the real and imaginary parts of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures substantially differ from those of the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites. The real part of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures follows the curve with a minimum near the percolation threshold of the composite, and the imaginary part smoothly decreases as the ferromagnetic phase concentration increases. The results obtained are explained by the increase in the bifurcation temperature due to the conduction electrons of the semiconductor interlayer, which favor magnetic ordering of ferromagnetic grains.     

XANES and USXES studies of interatomic interactions in (Co41Fe39B20)x(SiO2)1 ? x nanocomposites

The electronic structure and phase composition of (Co₄₁Fe₃₉B₂₀) _x (SiO₂)_{1 − x} nanocomposites are studied by x-ray absorption near-edge spectroscopy, which is extremely sensitive to the chemical environment of elements in multicomponent compounds. An analysis of the recorded Fe L _{2, 3}, Co L _{2, 3}, B K, Si L _{2, 3}, and O K absorption spectra demonstrates interatomic interactions between the elements of the metallic and dielectric components of the nanocomposites. As a result of these interatomic interactions, a complex multiphase system, whose electronic structure should determine the transport and magnetic properties of the nanocomposites, forms. In particular, the transformation of the fine structure of the iron L _{2, 3} spectra reflects a change in the ratio of divalent to trivalent iron in its oxides and/or silicates. CoO and complex boron oxides are found to exist in the nanocomposites. The electrical conductivity of a FeO · F₂O₃ · CoO grain embedded in the silicate-oxide medium of the nanocomposites is controlled by electron exchange between Co²⁺, Fe²⁺, and Fe³⁺ ions. The dielectric component consists of a mixture of silicon oxide and the silicates/borosilicates of transition metals. Original Russian Text ? é.P. Domashevskaya, S.A. Storozhilov, S.Yu. Turishchev, V.M. Kashkarov, V.A. Terekhov, O.V. Stogneĭ, Yu.E. Kalinin, A.V. Sitnikov, S.L. Molodtsov, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 1, pp. 135–141.     

Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1?x gate dielectrics on Ge

(TiO₂) _x (Al₂O₃)_1−x (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO₂)_0.8(Al₂O₃)_0.2 film annealed at 500°C is amorphous with sharp interface between (TiO₂)_0.8(Al₂O₃)_0.2 and Ge. The conduction-band offsets are enhanced from 1.04 to 1.40 eV with increasing Al content. Capacitance equivalent thickness of 15.8 ? for (TiO₂)_0.9(Al₂O₃)_0.1 gate dielectrics is achieved with a gate leakage current of 2.70×10⁻⁵ A/cm² at V _g=+1 V.     

(Sb2Te3)0.75(1－x)(Bi2Te3)0.25(1－x)(Sb2Se3)x机械合金化粉体的制备及其冷压烧结样品的热电性能研究

采用机械合金化法制备了p型赝三元(Sb₂Te₃-Bi₂Te₃-Sb₂Se₃)合金粉体，对其进行XRD分析表明Te，Bi，Sb，Se单质粉末，经100h球磨后实现了合金化；SEM分析表明所得机械合金化粉体材料颗粒均匀、细小，颗粒尺寸在10nm到100nm量级.使用这种粉体制备了冷压烧结块体样品，在室温下测量了温差电动势率(α)和电导率(σ)，研究了烧结温度对材料热电性能的影响，结果表明在低于300℃的烧结温区，样品室温下的热电性能随烧结温度的升高不断提高，功率因子(α²σ)由未烧结样品的0.59μW cm^-1K^-2升高到在300℃下烧结样品的15.9μW cm^-1K^-2，这一结果对确定材料的最佳烧结温度具有重要意义. 关键词： 赝三元热电材料 机械合金化 冷压 烧结     

Structure and magnetism of semiconductor crystals of the (Ga1 ? xMnx)2Se3 (x = 0?0.04) compounds

Neutron diffraction and magnetic measurements have been used to study the effect of doping with Mn³⁺ ions on the fine crystal structure of the Ga₂Se₃ monoclinic compound. It has been established that the structural state of the crystals is changed even at a relatively low doping level (x = 0.04). Arguments in favor of the fact that local Jahn-Teller distortions are responsible for the formation of the fine structure and magnetism in compounds of this class are presented.     

Profile of the refractive index distribution over the depth of (HfO2)x(Al2O3)1 ? x films

Capabilities of the method of laser null ellipsometry for the study of optical parameters of thin films of multicomponent alloys are demonstrated. Films of alloys (HfO₂) _x (Al₂O₃)_{1 − x} on single-crystal silicon are obtained by the chemical vapor deposition with the use of the following volatile compounds: hafnium dipivaloylmethanate (IV) and aluminum acetylacetonate (III). The selection of initial sets for their optical parameters is justified. The selected model is shown to correspond to experimental data. In films deposited from the mixture of precursors, the refractive index increases from a substrate to a film surface. Due to the separation of sources, films described by a single-layer model were deposited. This fact is indicative of the homogeneous distribution of components over the film thickness.     

Structural and electrical investigation of (Ag3AsS3)x(As2S3)1?x superionic glasses

Structural studies of (Ag₃AsS₃) _x (As₂S₃)_1−x chalcogenide superionic glasses in the compositional range x = 0.3–0.9 were performed by scanning electron microscopy. Temperature and compositional dependences of transmission coefficient, electrical conductivity, and activation energy were investigated     

Emission centers in Ca1–xPrxF2+x (x = 0.35) solid solutions

Luminescence spectra of Ca_0.65Pr_0.35F_2.35 solid solutions are studied. It is found that, depending on the excitation energy, different kinds of emission centers appear in these spectra. An interconfigurational 4f ¹5d¹ →4f² luminescence is typical for single Pr³⁺ ions in tetragonal sites. Data on the structure of the solid solutions show that the emission centers involved in ¹S₀ → 4f² transitions can be attributed to Pr³⁺ ions contained in clusters.     

Anisotropy of plasma reflection of solid solutions (Bi2 ? xSbx)Te3 (0 < x < 1) in the Temperature Range 78–293 K

We study IR polarized reflection spectra of solid solutions (Bi_2−x Sb _x )Te₃ (0 < x < 1) in the temperature range 78–293 K and in the excitation range of plasma oscillations of free charge carriers. We reveal that, as the content of Sb₂Te₃ in the solid solution increases from 0 to 50%, the anisotropy of both plasma frequencies and magnetic susceptibility vary insignificantly. This indicates that, at 293 K, these crystals do not show significant changes in the composition of groups of free carriers near the chemical potential level. We have found that to describe the observed anisotropy of plasma frequencies, it is necessary to take into account the effect of heavy holes of the valence band. This is also confirmed by the results of the study of the temperature behavior of plasma reflection spectra, which exhibit regularities that are similar to anomalous temperature changes of the Hall coefficient. We show that a decrease in plasma frequencies with increasing temperature cannot be described by an increase in the effective mass of charge carriers in accordance with the expression m* ∼ T ^0.17, which was obtained upon interpretation of temperature dependences of a number of kinetic coefficients. We use the empirical Moss rule ɛ_∞² E _g to estimate the rate of decrease of the thermal band gap dE _g /dT = −1.6 × 10⁻⁴ eV/deg in a crystal that contains 25% Sb₂Te₃.     

Ferromagnetic resonance, magnetic properties, and resistivity of (CoFeZr)x(Al2O3)1 ? x/Si multilayer nanostructures

Comparative investigations of static magnetic properties, magnetoresistance, and ferromagnetic resonance data of multilayer nanostructures consisting of CoFeZr-Al₂O₃ composite magnetic layers and amorphous silicon semiconductor spacers were performed in a layer thickness range below 5 nm. The influence of layer dimension parameters and chemical peculiarities of silicon on the inner structure and type of magnetic interactions in nanostructures with 35 and 46 at % magnetic phase composite layers is discussed.     

Mechanism of NdSr2 ? xCaxMn2O7 (0 ≤ x ≤ 2.0) solid solution formation

The mechanisms of formation of NdSr_{2− x} Ca _x Mn₂O₇ (0 ≤ x ≤ 2.0) solid solution have been studied. The dependence of its volume magnetic susceptibility on the calcium concentration is obtained. The stability of this solid solution is compared with that of similar solid solutions in lanthanum-containing systems.     

Optical properties of the HfO2 ? x N x and TiO2 ? x N x films prepared by ion beam sputtering

Optical characteristics of the HfO_{2 − x} N _x and TiO_{2 − x} N _x films obtained by reactive ion beam sputtering have been investigated by spectral ellipsometry. The chemical composition of the films was determined using X-ray photoelectron spectroscopy. The nitrogen content in the oxynitride films (determined by the N₂/O₂ ratio in the gas mixture during synthesis) reached ≈9 at % for TiO_{2 − x} N _x and ≈ 6 at % for HfO_{2 − x} N _x . It is found that the dispersion relations n(λ) and k(λ) for the TiO_{2 − x} N _x films change from those characteristic of titanium dioxide to those typical of titanium nitride with an increase in the nitrogen content from 0 to ≈9 at %. The optical parameters of the HfO_{2 − x} N _x films depend weakly on the nitrogen content in the range 0–6 at %. Original Russian Text ? V.V. Atuchin, V.N. Kruchinin, A.V. Kalinkin, V.Sh. Aliev, S.V. Rykhlitskiĭ, V.A. Shvets, E.V. Spesivtsev, 2009, published in Optika i Spektroskopiya, 2009, Vol. 106, No. 1, pp. 77–82.     

Synthesis and study of photocatalytic activity of nanoscale quasi-one-dimensional Ti1 ? xVxO2 (0 ≤ x ≤ 0.13) and Zn1 ? xCoxO (0 ≤ x ≤ 0.3) oxides

A original method of synthesis of quasi-one-dimensional Ti_{1 − x} V _x (OCH₂CH₂O)₂ (0 ≤ x ≤ 0.13) and Zn_{1 − x} Co _x (HCOO)(HOCH₂CH₂O) (0 ≤ x ≤ 0.3) has been developed. The synthesis products were used as a basis for nanoscale extended Ti_{1 − x} V _x O₂ and Zn_{1 − x} Co _x O oxides. The compounds obtained and products of their thermolysis were investigated by X-ray diffraction, microscopy, IR spectroscopy, thermogravimetry, and chemical analysis; the shape and size of particles were determined by scanning electron microscopy. The good prospects of Ti_{1 − x} V _x O₂ and Zn_{1 − x} Co _x O solid solutions as photocatalysts for hydroquinone oxidation are shown.     

Dielectric properties of perovskite ceramics of (1–x)BiFeO3 ? x(KBi)1/2TiO3 (0.40 < x < 0.85) solid solutions from impedance spectroscopy data

The dielectric properties of the ceramics of (1 − x)BiFeO₃ − x(KBi)_1/2TiO₃ (0.40 < x < 0.85) solid solutions with an orthorhombic structure have been studied using impedance spectroscopy in the frequency range 25–10⁶ Hz at different temperatures. It has been shown that these solid solutions undergo a diffuse ferroelectric phase transition. The Curie temperature is found to be in the range 620–640 K. The activation energies of dielectric polarization relaxation (δE _M ) and dc charge carriers (ΔE _dc) are determined. It has been established that, in the vicinity of 460 K, ΔE _dc increases jumpwise as the temperature increases.