薄膜多层微光专用混合集成电路的研制

本文简略地介绍了采用埋置电阻型薄膜多层工艺技术研制的微光专用混合集成电路的电路原理，设计思想，以及电路性能，着重阐述了多层工艺中出现的问题及解决的方法。     

集成电路中的多层布线技术

本文参考了国外近期一些有关资料,结合实际经验,对国外目前多层布线的几种方法以及今后发展趋势作了综合论述,同时对国内的多层布线技术的今后发展方向提出一些看法。     

铝阳极氧化多层布线基板在混合集成电路中的应用研究

铝阳极氧化多层布线基板是一种新型的MCM用多层布线基板，具有优良的性能。本文介绍了这种基板的特点和制作工艺原理及制作方法，并重点介绍了它在实用化电路研制过程中的设计、关键工艺技术及电路的研制情况。     

沸合多层基板技术及其应用

混合多层基板是混合型多芯片组件的关键组成部分,而混合型多芯片组件是一种高级类型的多芯片组件,具有优良的性能／价格比。本文阐述了混合多层基板的类型和特点,并重点介绍共烧陶瓷－薄膜型混合多层基板的设计考虑和设计规范、关键工艺技术及其应用概况。     

集成电路多层结构中的化学机械抛光技术

化学机械抛光技术（ＣＭＰ）已成功地应用于集成电路多层结构中的介质层和金属层的全局平面化。这是唯一能对亚微米经器件提供全局平面化的技术，对０．３５μｍ及以下的器件工艺是绝对必须的。ＣＭＰ面临的问题主要是难以维持高效的、稳定的、一次通过性的生产运转。     

多芯片组件用薄膜多层互连技术

本文首先指出研究多芯片组件用薄膜多层互连技术的必要性,然后对此类薄膜多层互连的材料、结构及工艺进行详细介绍,最后举例说明它在多芯片组件中的应用情况。     

多层微波集成电路中微带线层间互连仿真

针对多层微波集成电路设计的微带线层间互连问题,介绍了垂直通孔互连、垂直带条互连和层耦合过渡互连三种高性能的互连方法,并且采用三维电磁仿真软件HFSS对这三种互连结构进行了建模和仿真.仿真结果表明,垂直通孔互连和垂直带条互连在0.1~25 GHz的频宽范围内,回波损耗S11<-20 dB,插入损耗S21>-1 dB,互连性能优良,而层耦合过渡互连在20~68 GHz内回波损耗S11<-20 dB,插入损耗S21>-1 dB,具有在毫米波频段实现互连的潜力.     

Raphael-深亚微米集成互连参数仿真优化系统

针对超深亚微米层次下的金属互连设计,使用Raphael(集成布线互连)仿真系统完成了互连寄生效应参数的提取。介绍了Raphael仿真系统的主要功能及基本应用,并分析了常规集成布线互连参数模型。采用二层跨越式互连结构,对寄生电阻、电容参数进行了仿真,并得到电流密度的分布结果。这些参数的提取及验证对电路的布局设计是十分重要的。     

Analysis and design of wide band Microstrip-line-fed antenna with defected ground structure for Ku band applications

A wide band Microstrip antenna is proposed for Ku band applications with defected ground structure. A circular shape defect is integrated in the ground plane. A novel equivalent circuit model is proposed for Microstrip patch antenna with defected ground structure. Accurate design equations are presented for the wideband Microstrip antenna and theoretical analysis is done for the proposed structure. The proposed antenna has an impedance bandwidth of 56.67% ranging from 9.8 GHz to 17.55 GHz, which covers Ku-band and partially X-band. The antenna shows good radiation characteristics within the entire band, and has a gain ranging from 5 dBi to 12.08 dBi. Minimum isolation between co-polar and cross-polarization level of 20 dB and 15 dB is achieved in H-plane and E-plane respectively. The simulation of the proposed antenna is done on HFSS v.14, and measured results of fabricated antenna are in good agreement with the theoretical and simulated results.     

多层介质频率选择表面的等效电路分析方法

基于数值仿真计算和微波网络理论,提出了一种多层介质中频率选择表面(FSS)等效电路的分析方法.该方法物理过程直观,计算量小,适用于二维任意形状FSS等效电路的精确求解.以方形贴片型FSS为例验证了等效电路模型的准确性,并分析了多层介质对其等效电路参数的影响规律.最后,基于滤波器理论与FSS等效电路模型设计了双层带通型FSS,计算结果表明全波仿真结果与理论计算结果基本一致,为多层FSS的综合设计提供了一种精确设计方法.     

全集成微电子神经桥芯片研究

Nerve tracts interruption is one of the major reasons for dysfunction after spiral cord injury. The microelectronic neural bridge is a method to restore function of interrupted neural pathways, by making use of microelectronic chips to bypass the injured nerve tracts. A low-power fully integrated microelectronic neural bridge chip is designed, using CSMC 0.5-μm CMOS technology. The structure and the key points in the circuit design will be introduced in detail. In order to meet the requirement for implantation, the circuit was modified to avoid the use of off-chip components, and fully monolithic integration is achieved. The operating voltage of the circuit is 4-2.5 V, and the chip area is 1.21×1.18 mm2. According to the characteristic of neural signal, the time-domain method is used in testing. The pass bandwidth of the microelectronic neural bridge system covers the whole frequency range of the neural signal, power consumption is 4.33 mW, and the gain is adjustable. The design goals are achieved.     

A compact planar ultra-wideband bandpass filter with multiple resonant and defected ground structure

A compact bandpass filter with dumbbell shape Defected Ground Structure (DGS) operating on ultra wide pass band (UWB – 3.1 to 10.6 GHz) is proposed. It is based on hybrid microstrip coplanar waveguide (dual sided metal) structure. A Multiple Resonant Structure (MRS) is constructed using coplanar waveguide (CPW) planar transmission line. The MRS makes the resonance using quarter wavelength and half wavelength open-ended CPW. The equispaced three resonances at lower (3.1 GHz), center (6.85 GHz) and higher edge (10.6 GHz) of the whole Ultra Wide Band is achieved using CPW MRS. To make the band as flat as possible, two more resonances are introduced using quarter wavelength microstrip patches on top of the commonly shared substrate, so the proposed filter becomes a five pole bandpass filter. A dumbbell shaped defected ground structure on either side of CPW MRS improves the return loss almost less than 20 dB over the whole UWB passband. The simulated results of proposed filter show good transmission response within passband and good rejection in out of the band. The simulated and measured results are very close to each other which proves the efficacy of proposed design.     

集成电路技术发展的物理极限挑战与对策

介绍了集成电路芯片发展的基本规律和现状 ,着重综述了这些规律在微电子学领域所遇到的物理极限挑战及解决这些问题的最新技术 ,并预测了 2 1世纪集成电路技术的重点研究方向     

边积分边读出低噪声红外焦平面读出电路研究

设计了一款低噪声InGaAs焦平面读出电路.提出一种新型相关双采样电路结构,可在边积分边读出模式下有效抑制积分电容(0.15 pF)的KTC噪声.电路经0.5 μn5 V Nwell CMOS工艺流片,测试结果符合设计目标,在高帧频边积分边读出模式下工作状态良好,电路噪声约1.7×10-4V,动态范围大于80 dB.     

Optimization of gray-scale performance in pixellated-metal-mirror FLC-OASLM by equivalent circuit model

An equivalent circuit model of a pixellated-metal-mirror ferroelectric liquid crystal (FLC) optically addressed spatial light modulator (OASLM) is proposed. Using both structure and FLC material parameters of a real device and real material as the simulation parameters, the model is firstly confirmed by good agreement of simulation results and the reported experimental ones, and then utilized to optimize gray-scale performance of the OASLM. The model is developed from an improved FLC equivalent circuit, and has the ability to describe the voltage dropped across the modulating layer and to predict how optical outputs vary over time with the input drive voltage and control image. Simulation results indicate that gray-scale performance of the OASLM is highly dependent on write pulse width. More than 10 gray scales are observed when write pulse width is 100 μs and the number reduces to four when it reaches 500 μs. Other parameters of drive voltage can be set to adjust the region of write light intensity over which gray scales are best produced, and write pulses are found to be primary at high write light intensities, whereas erase pulses are dominant at low write light intensities. Furthermore, although gray-scale performance is weakly dependent on erase-light intensity, the erase light is necessary to ensure a proper erasure of the device and at least 1 mW/cm² is required in this study.     

纳米尺寸自旋阀中电流驱动的自旋波发射

提出了在纳米赝自旋阀中的电流感应自旋传输矩的磁动力学描述,成功地解释了在磁纳米多层结构中的电流驱动微波发射和电流感应磁化翻转现象。自旋流极化由在电导匹配时的自旋流和化学势连续性边界条件决定。自旋矩的纵向和横向分量在自旋阀的电流驱动微波发射和电流感应磁化翻转现象中扮演了不同的角色:纵向自旋矩分量决定了电流感应磁化翻转(CIMS)效应,而横向自旋矩是自旋波发射(SWE)效应所不可缺少的。根据这一理论,由LLG方程自然得到自旋波发射的双模,分别为横向自旋矩引发的X和Y方向的振动,并引起磁多层电阻以频率2w或w(进动频率)随时间变化。磁场和自旋流共同决定了自旋波发射的频率和功率,这一理论预言了某种特殊的磁多层结构,如磁层相互垂直的结构,将具有大得多的微波发射效率,这一结论已经被实验所证实。