Synthesis,Structures, and Properties of Fused Thiophenes for Organic Field‐Effect Transistors

A series of fused thiophenes composed of fused α‐oligothiophene units as building blocks, end‐capped with either styrene or 1‐pentyl‐4‐vinylbenzene groups, has been synthesized through Stille coupling reactions. The compounds have been fully characterized by means of ¹H NMR spectrometry, high‐resolution mass spectrometry, and elemental analysis. The molecules present a trans–trans configuration between their double bonds, which has been verified and confirmed by Fourier‐transform infrared spectroscopy and single‐crystal X‐ray diffraction analysis. The X‐ray crystal structures showed π–π overlap and sulfur–sulfur interactions between the adjacent molecules. The decomposition temperatures were all found to be above 300 °C, indicating that compounds of this series possess excellent thermal stability. The fact that no phase transition occurs at low temperature indicates that they should be well‐suited for application in devices. Moreover, they possess low HOMO energy levels, based on cyclic voltammetry measurements, and suitable energy gaps, as determined from their thin‐film UV/Vis spectra. Thin‐film X‐ray diffraction analysis and atomic force microscopy revealed high crystallinity on supporting substrates. In addition, as the substrate temperature has a significant influence on the morphology and the degree of crystallinity, the device performance could be optimized by varying the substrate temperature. These materials were found to exhibit optimal field‐effect performance, with a mobility of 0.17 cm² V^?1 s^?1 and an on/off ratio of 10⁵, at a substrate temperature of 70 °C.     

Synthesis and Properties of Semiconducting Bispyrrolothiophenes for Organic Field‐Effect Transistors

A series of new highly soluble bispyrrolothiophenes were synthesized from vinyl azides by using transition‐metal‐catalyzed C?H‐bond functionalization. In addition to modifying the substituents present on the end‐pyrrolothiophene moieties, the arene linker in between the two units was also varied. The solution‐state properties and field‐effect‐transistor (FET) electrical behavior of these bispyrrolothiophenes was compared. Our investigations identified that the optical properties and oxidation potential of our compounds were dominated by the pyrrolothiophene unit with a λ_max value of approximately 400 nm and oxidation at approximately 1 V. FET devices constructed with thin films of these bispyrrolothiophenes were also fabricated by means of thin‐film solution processing. One of these compounds, a bispyrrolothiophene linked with benzothiodiazole, exhibits a mobility of approximately 0.3 cm² V^?1 s^?1 and the I_on/I_off value is greater than 10⁶.     

Thienoacene‐Fused Pentalenes: Syntheses,Structures, Physical Properties and Applications for Organic Field‐Effect Transistors

Three soluble and stable thienoacene‐fused pentalene derivatives ( 1 – 3 ) with different π‐conjugation lengths were synthesized. X‐ray crystallographic analysis and density functional theory (DFT) calculations revealed their unique geometric and electronic structures due to the interaction between the aromatic thienoacene units and antiaromatic pentalene moiety. As a result, they all possess a small energy gap and show amphoteric redox behaviour. Time dependent (TD) DFT calculations were used to explain their unique electronic absorption spectra. These new compounds exhibited good thermal stability and ordered packing in solid state and thus their applications in organic field‐effect transistors (OFETs) were also investigated. The highest field‐effect hole mobility of 0.016, 0.036 and 0.001 cm² V^?1 s^?1 was achieved for solution‐processed thin films of 1 – 3 , respectively.     

Thiophene–Diazine Molecular Semiconductors: Synthesis,Structural, Electrochemical,Optical, and Electronic Structural Properties; Implementation in Organic Field‐Effect Transistors

New transportation : New thiophene‐based semiconductors have been produced and studied by electrochemistry, various spectroscopic methods, and structural and morphological techniques in conjunction with model chemistry. Their electrical properties have been analyzed by implementation in field‐effect transistor devices (see figure).

     

Solution‐Based Direct Growth of Organic Crystals on an Active Channel Region for Printable Bottom‐Contact Organic Field‐Effect Transistors

The growth and self‐organization of organic crystals between a source (S) and drain (D) electrode by a method based on the use of a micropipette and isothermal evaporation of the solvent in a two‐liquid system led to the formation of organic‐crystal transistors (see polarized optical micrograph). The method is similar to ink‐jet printing and should be suitable for the fabrication of low‐cost and mass‐producible printed electronic devices.

     

Thieno[3,2‐b]thiophene‐Diketopyrrolopyrrole‐Based Quinoidal Small Molecules: Synthesis,Characterization, Redox Behavior,and n‐Channel Organic Field‐Effect Transistors

We report the synthesis, characterization, redox behavior, and n‐channel organic field‐effect (OFET) characteristics of a new class of thieno[3,2‐b]thiophene‐diketopyrrolopyrrole‐based quinoidal small molecules 3 and 4 . Under ambient atmosphere, solution‐processed thin‐film transistors based on 3 and 4 exhibit maximum electron mobilities up to 0.22 and 0.16 cm² V^?1 s^?1, respectively, with on‐off current ratios (I_on/I_off) of more than than 10⁶. Cyclic voltammetry analysis showed that this class of quinoidal derivatives exhibited excellent reversible two‐stage reduction behavior. This property was further investigated by a stepwise reductive titration of 4 , in which sequential reduction to the radical anion and then the dianion were observed.     

Solution‐Processable Balanced Ambipolar Field‐Effect Transistors Based on Carbonyl‐Regulated Copolymers

It is very important to develop ambipolar field effect transistors to construct complementary circuits. To obtain balanced hole‐ and electron‐transport properties, one of the key issues is to regulate the energy levels of the frontier orbitals of the semiconductor materials by structural tailoring, so that they match well with the electrode Fermi levels. Five conjugated copolymers were synthesized and exhibited low LUMO energy levels and narrow bandgaps on account of the strong electron‐withdrawing effect of the carbonyl groups. Polymer thin film transistors were prepared by using a solution method and exhibited high and balanced hole and electron mobility of up to 0.46 cm² V^?1 s^?1, which suggested that these copolymers are promising ambipolar semiconductor materials.     

Dithienylmethanone‐Based Cross‐Conjugated Polymer Semiconductors: Synthesis,Characterization, and Application in Field‐Effect Transistors

Herein, we report the synthesis, characterization, and field‐effect properties of two cross‐conjugated dithienylmethanone (DMO)‐based alternating polymers, namely, PDMO‐S and PDMO‐Se . Both polymers possess high thermal stability, good solubility, and broad absorption spectra. Their electrochemical properties were investigated using cyclic voltammetry, indicating that PDMO‐Se has higher HOMO/LUMO energy levels of −5.49/−3.49 eV than −5.57/−3.58 eV of PDMO‐S . The two polymers exhibited promising charge transport properties with the highest hole mobility of 0.12 cm² V⁻¹ s⁻¹ for PDMO‐S and 0.025 cm² V⁻¹ s⁻¹ for PDMO‐Se . AFM and 2D‐GIXRD analyses demonstrated that the PDMO‐S formed lamellar, edge‐on packing thin film with close π‐π stacking. These findings suggest that cross‐conjugated polymers might be potential semiconducting materials for low‐cost and flexible organic electronics. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 1012–1019     

Heteroanalogues of PCBM: N‐Bridged Imino‐PCBMs for Organic Field‐Effect Transistors

Crossing the bridge : Two isomeric iminofullerenes, [5,6]‐open azafulleroid 1 and [6,6]‐closed aziridinofullerene 2 , were prepared by cycloaddition of an organic azide to C₆₀. These “azalogues” enable the study of the effects of the bridging atom in a fullerene cage, that is, C₆₀‐like (5,6‐open) versus PCBM‐like (6,6‐closed), as a function of their π systems (PCBM=[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester).

     

Cover Picture: Thiophene–Diazine Molecular Semiconductors: Synthesis,Structural, Electrochemical,Optical, and Electronic Structural Properties; Implementation in Organic Field‐Effect Transistors (Chem. Eur. J. 20/2009)

Molecular semiconductors in the guise of three diazine‐functionalized oligothiophenes have been synthesized and their structural, optical, vibrational, electrochemical, and semiconductor properties studied. In their Full Paper on page 5023 ff. , J. T. López Navarrete, A. Facchetti, T. J. Marks et al. describe how these diazine‐functionalized oligothiophenes are reasonably efficient hole transporters.

     

n‐Type Reduced Graphene Oxide Field‐Effect Transistors (FETs) from Photoactive Metal Oxides

Graphene is of considerable interest as a next‐generation semiconductor material to serve as a possible substitute for silicon. For real device applications with complete circuits, effective n‐type graphene field effect transistors (FETs) capable of operating even under atmospheric conditions are necessary. In this study, we investigated n‐type reduced graphene oxide (rGO) FETs of photoactive metal oxides, such as TiO₂ and ZnO. These metal oxide doped FETs showed slight n‐type electric properties without irradiation. Under UV light these photoactive materials readily generated electrons and holes, and the generated electrons easily transferred to graphene channels. As a result, the graphene FET showed strong n‐type electric behavior and its drain current was increased. These n‐doping effects showed saturation curves and slowly returned back to their original state in darkness. Finally, the n‐type rGO FET was also highly stable in air due to the use of highly resistant metal oxides and robust graphene as a channel.     

Diketopyrrolopyrrole‐Porphyrin Based Conjugated Polymers for Ambipolar Field‐Effect Transistors

Porphyrin‐based molecules have been widely used in dye‐sensitized solar cells and bulk heterojunction solar cells, but their application in field‐effect transistors (FETs) is limited. In this work, two conjugated polymers based on diketopyrrolopyrrole and porphyrin units were developed for FETs. The polymers exhibit extra‐low band gap with energy levels close to −4.0 eV and −5.0 eV due to the strong electron‐donating and withdrawing ability of porphyrin and diketopyrrolopyrrole. With additionally high crystalline properties, ambipolar charge carrier transports with a hole mobility of 0.1 cm² V⁻¹ s⁻¹ in FETs were realized in these polymers, representing the highest performance in solution‐processed FETs based on porphyrin unit.     

Solution‐Processable n‐Type Semiconductors Based on Unsymmetrical Naphthalene Imides: Synthesis,Characterization, and Applications in Field‐Effect Transistors

A series of unsymmetrical naphthalene imide derivatives ( 1a , 1b , 2 , 3 , 4 , 5 ) with high electron affinity was synthesized and used in n‐channel organic field‐effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low‐lying LUMO energy levels from ?3.90 to ?4.15 eV owing to a strong electron‐withdrawing character. Solution‐processed thin‐film OFETs based on 1a , 1b , 2 , 3 , 4 were measured in both N₂ and air. They all showed n‐type FET behavior. The liquid‐crystalline compounds 1a , 1b , and 3 showed good performance owing to the self‐healing properties of the film in the liquid‐crystal phase. Compound 3 has an electron mobility of up to 0.016 cm² V^?1 s^?1 and current on/off ratios of 10⁴–10⁵.     

Graphene Field‐Effect Transistors: Electrochemical Gating,Interfacial Capacitance,and Biosensing Applications

Single‐layer graphene has received much attention because of its unique two‐dimensional crystal structure and properties. In this review, we focus on the graphene devices in solution, and their properties that are relevant to chemical and biological applications. We will discuss their charge transport, controlled by electrochemical gates, interfacial and quantum capacitance, charged impurities, and surface potential distribution. The sensitive dependence of graphene charge transport on the surrounding environment points to their potential applications as ultrasensitive chemical sensors and biosensors. The interfacial and quantum capacitance studies are directly relevant to the on‐going effort of creating graphene‐based ultracapacitors for energy storage.     

Dithienocyclopentathieno[3,2‐b]thiophene Hexacyclic Arene for Solution‐Processed Organic Field‐Effect Transistors and Photovoltaic Applications

We have developed a ladder‐type dithienocyclopentathieno[3,2‐b]thiophene ( DTCTT ) hexacyclic unit in which the central thieno[3,2‐b]thiophene ring was covalently fastened to two adjacent thiophene rings through carbon bridges, thereby forming two connected cyclopentadithiophene ( CPDT ) units in a hexacyclic coplanar structure. This stannylated Sn‐DTCTT building block was copolymerized with three electron‐deficient acceptors, dibromo‐thieno[3,4‐c]pyrrole‐4,6‐dione ( TPD ), dibromo‐benzothiadiazole ( BT ), and dibromo‐phenanthrenequinoxaline ( PQX ), by Stille polymerization, thereby furnishing a new class of alternating donor–acceptor copolymers: PDTCTTTPD , PDTCTTBT , and PDTCTTPQX , respectively. Field‐effect transistors based on PDTCTTPQX and PDTCTTBT yielded high hole mobilities of 0.017 and 0.053 cm² V^?1 s^?1, respectively, which are among the highest performances among amorphous donor–acceptor copolymers. A bulk heterojunction solar cell that incorporated PDTCTTTPD with the lower‐lying HOMO energy level delivered a higher V_oc value of 0.72 V and a power conversion efficiency (PCE) value of 2.59 %.     

Strongly Correlated Alignment of Fluorinated 5,11‐Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution‐Processed Field‐Effect Transistors

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro‐to‐nanoscale investigation on the crystal growth of fluorinated 5,11‐bis(triethylgermylethynyl)anthradithiophene (diF‐TEG‐ADT) and its implication for the electrical behavior of organic field‐effect transistors (OFETs). diF‐TEG‐ADT exhibits remarkable self‐assembly through spin‐cast preparation, with highly aligned edge‐on stacking creating a fast hole‐conducting channel for OFETs.