Raman spectroscopic investigation on femtosecond laser induced residual stress and element distribution in bismuth germanate glasses

Localized microstructure and elemental redistribution were induced in bismuth germanate glasses by irradiation with high repetition rate 800 nm femtosecond laser pulses. The confocal Raman spectra were examined to study the redistribution of elements and residual thermal stress. The microscopic Raman spectra indicated that the residual thermal stress increases from the unmodified region to the center of the laser modified region, while Bi is enriched at the boundary area of the inner structure of the laser modified region relative to Ge. Electron microprobe analysis further confirmed the elemental redistribution of Bi and Ge, which agrees well with the Raman spectral analysis. Copyright © 2012 John Wiley & Sons, Ltd.     

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

Micro‐ and nano‐electromechanical systems (MEMS and NEMS) fabricated in 3 C‐SiC are receiving particular attention thanks to the material physical properties: its wide band gap (2.3 eV), its ability to operate at high temperatures, its mechanical strength and its inertness to the exposure in corrosive environments. However, high residual stress (which is normally generated during the hetero‐epitaxial growth process) makes the use of 3 C‐SiC in Si‐based MEMS fabrication techniques very limited leading to a failure of micro‐machined/sensor structures. In this paper, micro‐Raman characterizations and finite‐element modeling (FEM) of microstructures realized on poly and single‐crystal (100) 3 C‐SiC/Si films are performed. Transverse optical (TO) Raman mode analysis reveals the stress relaxation on the free standing structure (796.5 cm⁻¹) respect to the stressed unreleased region (795.7 cm⁻¹). Also, microstructures as cantilever, bridge and planar rotating probe show an intense stress field located around the undercut region. Here, the TO Raman mode undergoes an intense shift, up to 2 cm⁻¹, ascribed to the modification of the Raman stress tensor. Indeed, the generalized axial regime, described by diagonal components of the Raman stress tensor, cannot be applied in this region. Raman maps analysis and FEM simulations show the ‘activation’ of the shear stress, i.e. non‐diagonal components of the stress tensor. The stress‐Raman modes shift correlation, in the case of fully non‐diagonal stress tensors, has been investigated. The aim of future works will be to minimize the stress field generation and the defects density within the epitaxial layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si

The carrier mobility of Si material can be enhanced under strain, and the stress magnitude can be measured by the Raman spectrum. In this paper, we aim to study the penetration depths into biaxially-strained Si materials at various Raman excitation wavelengths and the stress model corresponding to Raman spectrum in biaxially-strained Si. The experimental results show that it is best to use 325 nm excitation to measure the material stress in the top strained Si layer, and that one must pay attention to the distortion of the buffer layers on measuring results while 514 nm excitation is also measurable. Moreover, we established the stress model for Raman spectrum of biaxially-strained Si based on the Secular equation. One can obtain the stress magnitude in biaxially-strained Si by the model, as long as the results of the Raman spectrum are given. Our quantitative results can provide valuable references for stress analysis on strained materials.     

Synthesis of hafnium tungstate by a CO2 laser and its microstructure and Raman spectroscopic study

Densely packed hafnium tungstate blocks were synthesized by rapid solidification with a CO₂ laser. It is shown that the optimum synthesis conditions for HfW₂O₈ are around 700 W laser power and 1 mm/s scan speed. Scanning electron microscopy (SEM) observation shows that the blocks consist of oriented nano‐threads/rods that grew horizontally on the surface region and vertically in the interior. The orientations of the nanostructures are governed by the heat transfer directions on the surface and in the interior. Raman spectroscopic and X‐ray diffraction studies show that the samples solidified in the cubic structure with minor contents of the orthorhombic phase. This is explained by a compressive stress induced during the rapid solidification process due to a sudden drop of temperature of the molten pool to the ambient. The stress is estimated to be about 0.6 GPa by comparison with high‐pressure Raman study. Some specific Raman bands appear in the samples synthesized with the laser synthetic route but not in the sample by solid‐state reaction. Copyright © 2008 John Wiley & Sons, Ltd.     

Raman imaging and stress quantification in self‐assembled graphene oxide fiber ‘Latin Letters’

To probe the intrinsic stress distribution in terms of spatial Raman shift (ω) and change in the phonon linewidth (Γ), here we analyze self‐assembled graphene oxide fibers (GOF) ‘Latin letters’ by confocal Raman spectroscopy. The self‐assembly of GOF ‘Latin letters’ has been explained through surface tension, π–π stacking, van der Waals interaction at the air–water interface and by systematic time‐dependent investigation using field emission scanning electron microscopy analysis. Intrinsic residual stress due to structural joints and bending is playing a distinct role affecting the E_2g mode (G band) at and away from the physical interface of GOF segments with broadening of phonon linewidth, indicating prominent phonon softening. Linescan across an interface of the GOF ‘letters’ reveals Raman shift to lower wavenumber in all cases but more so in ‘Z’ fiber exhibiting a broader region. Furthermore, intrinsic stress homogeneity is observed for ‘G’ fiber distributed throughout its curvature with negligible shift corresponding to E_2g mode vibration. This article demonstrates the significance of morphology in stress distribution across the self‐assembled and ‘smart‐integrable’ GOF ‘Latin letters’. Copyright © 2016 John Wiley & Sons, Ltd.     

The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation

The mechanism of the recrystallization in epitaxial (0001) GaN film, introduced by the indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by micro‐Raman area mapping. ‘Pop‐in’ bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of the recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is noted, for the first time, as the rate‐limiting factor for the dislocation dynamics initiating the recrystallization process in GaN. Copyright © 2009 John Wiley & Sons, Ltd.     

单轴、双轴应变Si拉曼谱应力模型

本文依据拉曼光谱原理, 基于Secular方程及拉曼选择定则分别获得了单轴、 双轴(001), (101), (111)应变Si材料应变张量与拉曼谱线移动的定量关系, 并在此基础上, 基于广义胡克定律最终建立了单轴、双轴(001), (101), (111)应变Si材料拉曼谱峰与应力的理论关系模型. 该模型建立过程详细、系统, 所得结果全面、量化, 可为应变Si材料应力的测试分析提供重要理论参考.     

爆炸物、毒品的标准拉曼谱图库的建立及自动检索系统

采集31种爆炸物和73种毒品的标准拉曼谱图,分析其谱图,选出适合作为搜索条件的光谱范围。通过编程,建立标准拉曼谱图库和自动检索系统。在选定光谱范围内,拉曼谱图库选择信号较强的特征峰,进行曲线拟合,将获得的峰位置、相对峰强等数据作为参数写入标准拉曼谱图库。通过自动检索系统将未知拉曼光谱与数据库中的标准谱图进行分析比对,搜索软件自动给出正确结论。数据库具有添加、删除、备份、恢复等辅助功能,并具有自动扣除荧光背底,优化拉曼光谱图等功能。本文进一步分析了可能对分析比对结果造成影响的因素。     

单模光纤中受激喇曼散射对调制不稳定性的影响

基于修正的非线性薛定谔方程，利用线性扰动理论和数值方法研究了单模光纤中的调制不稳定性.由于受激喇曼散射的作用，使得喇曼增益谱叠加到光纤中的调制不稳定性增益谱上.这样，原本调制稳定的光纤正常色散区也出现了调制不稳定性；而在反常色散区，随着初始功率的增加，常规的调制不稳定性增益谱的增益和频谱范围均增大，而喇曼增益谱的增益增大但其频谱范围基本不变，这样导致常规的不稳定区域逐渐侵入并最终掩盖喇曼增益区.数值模拟验证了解析结果的正确性，并证明了利用反常色散情形下的调制不稳定性可以产生超短脉冲序列，但这种脉冲序列的进一步传输将会出现喇曼孤子自频移现象.     

紫外拉曼光谱研究钇掺杂的氧化锆体系表面相变

本文用紫外拉曼 ,近可见拉曼光谱和XRD检测了不同焙烧温度下Y2 O3-ZrO2 的相变过程。紫外拉曼光谱对样品表面相变极其灵敏 ,而近可见拉曼光谱和XRD提供的主要是体相和表面的混合信息。在紫外拉曼谱图中 ,只观察到单斜相的谱峰 ,没有明显的四方晶相的信号 ,这表明样品的表面主要是单斜晶相。然而 ,XRD和近可见拉曼光谱的结果显示Y2 O3-ZrO2 体相是四方晶相。焙烧温度超过 40 0°时 ,紫外拉曼 ,近可见拉曼和XRD晶之间明显不同的结果表明Y2 O3-ZrO2 在表面区四方相很易转变为单斜相 ,体相中的四方相由于钇的添加而稳定存在。根据紫外拉曼和XRD结果 ,当升高温度时 ,在样品的表面形成一单斜相层 ,体相钇稳定的四方相 ,且由于Y2 O3的存在抑制了单斜相进一步向体相发展。     

MgB2超导薄膜的变温拉曼光谱研究

MgB₂作为迄今为止超导转变温度最高的合金超导体,由于其具有结构简单、相干长度长、晶界间不存在弱连接、上临界场很高、电-声散射时间短等特点,MgB₂超导薄膜在电子学领域有着广阔的的应用前景。拉曼光谱是研究电-声子相互作用和超导能带的一种有效方法,且已广泛用于分析MgB₂材料的电子、声子特征以及超导体能带结构,研究表明,样品质量、晶粒尺寸以及测试条件对MgB₂拉曼峰的峰位和峰形影响很大,其中拉曼光谱随温度的变化也是一个研究重点,但目前关于MgB₂变温拉曼光谱的研究,测试的温度范围相对较小,局限在83 K到室温区域或是转变温度附近。研究了大范围温度区间内MgB₂薄膜的拉曼光谱变化,采用混合物理化学沉积法在(0001)SiC衬底上制备了MgB₂多晶薄膜,薄膜的晶粒尺寸约为300 nm,超导转变温度为39.3 K,对其在10～293 K之间的拉曼光谱进行了测试,测量的波数范围为20～1 200 cm-1。变温拉曼光谱的测试结果显示,在高频620 cm-1附近以及低频80和110 cm-1附近存在MgB₂的拉曼峰。经分析,低频区域出现的两个拉曼峰的频率与超导能隙宽度相对应,表明MgB₂的双能隙特性。考虑到MgB₂中四种声子模式的拉曼活性,高频620 cm-1附近的拉曼峰应是由E_2g振动模所贡献的,且随着测试温度的降低,该拉曼峰的峰位未发生明显的偏移,但半高宽显著变小,从293 K时的380.7 cm-1减小到10 K时的155 .7 cm-1,分析表明E_2g声子与电子系统的非线性耦合所引起的非简谐效应可能是拉曼峰半高宽线性变小的主要原因。     

Micro‐Raman analysis of GaAs Schottky barrier solar cell

Gallium arsenide (GaAs) cells have been in the race with silicon single‐crystal cells for the highest efficiency photovoltaic devices. The annealed, irradiated Schottky barrier (SB) solar cells were characterised using micro‐Raman spectroscopy at three different regions: namely, at the (1) ohmic contact region, (2) unirradiated region and (3) irradiated region. We also present a micro‐Raman study of the damage process in annealed GaAs SB solar cells bombarded by high‐energy ions. A Gaussian line shape was fitted to the Raman spectra of the longitudinal optical phonon A₁(LO), and parameters such as intensity, full width at half maximum (FWHM) and the area under the peak were obtained for the different annealing temperatures. Biaxial stress (σ), carrier concentration (n), depletion length (L_d), dislocation velocity (ν) and life time of the first‐order optical phonon (τ) of the A₁(LO) mode of the irradiated region of the samples annealed at different temperatures were calculated. Copyright © 2010 John Wiley & Sons, Ltd.     

Laser-induced thermal effects on Si/SiO<Subscript>2</Subscript> free-standing superlattices

The thermal effects produced by continuous-wave laser radiation on free-standing Si/SiO₂ superlattices are studied. We compare two samples with different SiO₂ layer thicknesses (2 and 6 nm) and the same Si layer thickness (2 nm). The as-prepared free-standing superlattices contain some amount of Si nanocrystals (Si-nc). Intense laser irradiation at 488 nm of the as-prepared samples enhances the Raman scattering of Si-nc by two orders of magnitude. This laser-induced crystallization originates from melting of Si nanostructures in silica, which makes Si-nc better ordered and better isolated from the oxide surrounding. Continuous-wave laser control of Si-nc stress was achieved in these samples. In the proposed model, intense laser radiation melts Si-nc, and Si crystallization upon cooling down from the liquid phase in a silica matrix leads to compressive stress. The Si-nc stress can be tuned in the ∼3 GPa range using laser annealing below the Si melting temperature. The high laser-induced temperatures were verified with Raman spectroscopy. The laser-induced heat leads to a strongly nonlinear rise of light emission. The light emission is also observed in the anti-Stokes region, and its temperature dependence is practically the same for the two studied samples. The laser-induced temperature is essentially controlled by the absorbed laser power. PACS 78.55.-m; 78.20.-e; 68.55.-a; 78.30.-j     

基于拉曼光谱方法研究不同剪切力下的红细胞亚损伤

利用共聚焦拉曼光谱技术,对人工心脏泵不同剪切应力下受到亚损伤的红细胞进行实验研究,验证拉曼光谱对红细胞亚损伤程度的评估能力,为血液损伤评价提供了一种新的思路。实验采集血红蛋白和红细胞的拉曼光谱标准谱图并进行对比分析,以确定红细胞谱图特征峰的归属。用血液剪切力试验平台对测试血样施加暴露时间为1 s,大小分别为0,50,100,150,200,250和300 pa的剪切力。利用共聚焦拉曼仪器,在10倍长焦物镜,532 nm激光光源波长,积分时间10 s,积分次数2次,2.5 mW功率下采集剪切应力作用后的红细胞拉曼谱图。通过归一化的方法对比红细胞的拉曼谱图变化,评估红细胞亚损伤的程度,运用曲线拟合方法对特征峰和剪切应力进行拟合,验证拉曼光谱对红细胞亚损伤的评估能力。对比血红蛋白和红细胞的拉曼光谱标准谱图发现,红细胞谱图能够反映血红蛋白的内部结构。且结果表明,拉曼光谱法可以用于区分不同剪切应力下亚损伤的红细胞,推断剪切应力可以透过细胞膜从而影响到其内部的血红蛋白结构。且随着剪切力的增大,1 376 cm-1位置左侧谱线呈现明显抬高趋势,1 549和1 604 cm-1位置的峰强增高,1 639 cm-1位置的氧浓度标记带ν₁₀振动谱带减弱。其中1 549 cm-1位置的峰强为亚铁离子高自旋带,在不同剪切力的作用下,峰强差异表现最明显,与剪切应力呈明显的正向线性关系,拟合效果良好。拉曼光谱法检测样本处理简单、耗时短、操作简便、重现性好,且可以精确的检测到细胞内部结构的细微变化,可以评估红细胞的亚损伤程度,弥补了传统评价溶血的方法的不足,为人工心脏泵血液损伤评价提供了新的技术手段,拓宽了拉曼检测方法的应用领域。     

Analysis of residual stresses in ternary electroconductive composites

Residual stresses in ceramic particle electroconductive composites were investigated by Raman microprobe spectroscopy and X-ray diffraction. The composites were ternary electroconductive ceramics in the system AlN+SiC+(ZrB₂,MoSi₂). Due to the poor definition of the reinforcing phase peaks, only the matrix residual stress could be evaluated by Raman spectroscopy, whilst the residual stress in the reinforcing phase was calculated by the equilibrium conditions. These calculated values were compared with those experimentally obtained by X-ray diffraction. The agreement between Raman and X-ray results was quite satisfactory. The values of residual stress calculated by the composite theory were in good agreement with those measured by Raman and X-ray diffraction for the MoSi₂-containing composite. For the ZrB₂-containing composite, the value calculated by the composite theory falls between the values measured by Raman and X-ray diffraction. PACS 81.05.Je; 87.64.Je; 87.64.Bx     

Analyzing normal proliferating,hypoxic and necrotic regions of T-47D human breast cancer spheroids using Raman spectroscopy

Raman spectroscopy is an advanced chemical analytical technique that has gained significant interest in cancer research, in particular early detection and monitoring of cancer, with added advantages of non-invasive and real-time diagnosis. Recently, studies have shown its sensitivity to monitor chemical changes during cancer progression. This information will lead to identification of chemical markers (molecular fingerprints of chemical composition) that can be used as biological markers. In this study, we used a tumor spheroid model that mimics the characteristics of a non-vascular in vitro tumor model, we used a combination of Raman and multivariate approach to identify chemical changes associated with normal proliferating, hypoxic and necrotic regions of T-47D human breast cancer spheroid model. The results provide evidence that lipids, amide I, III and nucleic acid contents differ significantly in normal, hypoxic and necrotic regions. Principal component analysis loading plots has suggested that normal proliferating region separated with low amide I and high-tryptophan content compared to hypoxic and necrotic regions. These differences observed in three regions might be useful in identification of new spectral markers associated stress faced by each region progressing toward necrosis.     

Imaging of internal stress around a mineral inclusion in a sapphire crystal: application of micro‐Raman and photoluminescence spectroscopy

We developed a micro‐Raman and photoluminescence imaging technique for visualizing the internal stress fields in a sapphire crystal. The technique was applied to an Australian sapphire gemstone with a zircon inclusion. Considering piezospectroscopic effects on Raman and photoluminescence spectra, the Raman shifts of sapphire around the zircon inclusion were converted to hydrostatic pressure and deviatoric components of stress tensor. The internal stress was highly concentrated at the tips of the zircon crystal, where the deviatoric stress and the hydrostatic pressure component reached 700 and 470 MPa, respectively. Generation of compressive stress on the crystal surface of zircon can be explained by the difference in thermal expansion coefficients and elastic constants between sapphire and zircon. In general, internal stress fields induced by mineral inclusions reflect the pressure and temperature conditions at which the host sapphire gemstones were crystallized. Thus, the present technique can be utilized to identify the origin of gemstones. Copyright © 2012 John Wiley & Sons, Ltd.     

斜波导喇曼振荡器

 采用斜波导的喇曼氢气池, 使泵浦激光束在波导内部传播, 增大了受激喇曼散射的作用区域。在传播过程中光束截面逐渐被压缩, 补偿因波导内壁的反射损耗而引起的功率密度下降。在一定气压范围内提高了喇曼转换的效率, 并利用波导对激光束的均匀作用, 使输出的一阶斯托克斯光光强的均匀性获得改善。     

重金属铜胁迫苹果砧木根系的显微拉曼光谱诊断研究

重金属污染会影响农作物的正常生长,如何快速准确的实现对农作物中重金属的检测已成为亟待解决的问题之一。传统植物中重金属检测依赖于化学方法,虽然可以实现重金属含量的精准检测,然而其操作过程繁琐,并且无法实现批量样本的检测,更无法实现重金属胁迫下植物组织的原位微观检测。拉曼光谱具备无损探测固体、液体和气体状态的分子振动信息、光谱分辨率高和对水分不敏感等优势,因此利用拉曼光谱技术检测农作物中重金属含量具有可行性。苹果砧木是苹果树幼苗嫁接的基础,能够保障后期的苹果树体健康以及苹果果品品质与产量,而苹果砧木根系受到重金属污染,阻碍其健康生长并影响苹果树幼苗的抗逆性,因此探明重金属与苹果砧木根系互作机理十分必要。该研究以5组不同浓度CuSO₄·5H₂O溶液胁迫下的苹果砧木为研究对象,首先采集不同铜离子(Cu²⁺)胁迫梯度下苹果砧木根系的拉曼散射光谱,利用自适应迭代重加权惩罚最小二乘法(Air-PLS)和S-G平滑方法对所获得的拉曼光谱数据进行预处理,去除荧光影响以及进行基线校正;其次建立偏最小二乘判别分析(PLS-DA)模型和支持向量...