A frequency response model in multiquantum well lasers with unequilibrium carrier transport

A carrier transport model to explain the high-frequency response in high-speed MQW lasers is described. The ambipolar approximation, which is unsuitable for dealing with the high-speed carrier dynamics in MQW structures, was not adopted for small-signal analysis. The carrier transport effect can be characterized by four time constants: the electron transport time, _bmn; the hole transport time, _bmp; the electron escape time, _wbn; and the hole escape time, _wbp. The frequency response was interpreted as the sum of the constant response term due to the fast electron current and the roll-off term due to the slow hole transport time. The ratio of the electron contribution to the total response was proportional to the ratio of electron contribution to the total differential gain, , and reciprocally proportional to _n0 = 1 + _bmn/_wbn. The value of was calculated to be about 0.5 for typical MQW lasers. The roll-off frequency is mainly determined by . The ratio _p0 = 1 + _bmp/_wbp affects the resonant frequency and the damping rate in the high-bias condition.     

Energy relaxation in aϕ 4 with long range interactions

We investigate the influence of long range interactions on the relaxation behaviour of a lattice model with an on-site potential of ⁴-type and infinite range harmonic interactions. For finite number of particlesN, it is shown that the autocorrelation functions <E _n(t)E _n > of the fluctuations of the one-particle energiesE _n(t) decays exponentially. The corresponding relaxation time is proportional toN and is given by (T, N) =N₀(T). The temperature dependent time scale ₀ can explicitly be related to the dynamics of a one-particle correlator of the noninteracting system. The results are derived using Mori-Zwanzig projection formalism. The corresponding memory kernel is calculated within a mode coupling approximation and by a perturbative approach. Both results agree in leading order in 1/N. It is speculated that any interaction of range generates a timescale .     

Macroscopic short-time electrodynamics for conductors

In the macroscopic electrodynamics (MED) of good conductors (metals) based on Ohm's law j=E, the momentum relaxation time =m/ne² of the electrons limits the application to electromagnetic (EM) processes with characteristic timest. An interesting physical difficulty occurs in MED since the EM field damping time _R=/ of metals is very small compared with the minimum macroscopic time scale, _R. Consequently, the damping and propagation of EM waves and pulses in good conductors cannot be correctly described within the frame of conventional MED. New hyperbolic EM wave equations with relaxation and memory are proposed, which no longer exhibit the _R deficiency. The latter is caused by Ohm's law, which breaks down for short-time processes, due to neglect of electron inertia. The advantages of the proposed and the disadvantages of the conventional EM wave equations for good conductors are discussed in applications.     

Amorphous hydrogenated silicon studied by positron lifetime spectroscopy

Hydrogenated amorphous silicon (a-Si:H) prepared by dc glow discharge in silane was investigated by positron lifetime measurements at room temperature. The lifetime spectrum shows considerably longer lifetimes than in simultaneously measured Si single crystals. The dominant component with the time constant ₂=402 ps is discussed thoroughly in conjunction with positron trapping at microvoids containing more than 10 to 15 vacancies. Positron trapping at H-saturated dangling bonds cannot be ruled out. The long-lived component with ₃=1800 ps (I ₃=0.06) indicates positronium formation at larger voids.     

From the eden model to the kinetic growth walk: A generalized growth model with a finite lifetime of growth sites

We propose a new class of cluster growth models where growth sites have a finite lifetime , which contains as special cases the Eden model ( = ) and the kinetic growth walk ( = 1). For finite but large values the growth process can be characterized by a crossover timet _X; for times belowt _X an Eden-type cluster is formed, while for times abovet _X the growth process belongs to the universality class of the self-avoiding random walk. The crossover time increases monotonically with . We develop a scaling theory for the time evolution of the mean end-to-end distance between the seed and the last-added site, and for the average number of growth sites by which the kinetics of the growth process can be characterized. We test this scaling theory by extensive Monte Carlo simulations. We also extend our results to inhomogeneous media (percolation systems).     

Relaxation semiconductors: In theory and in practice

Relaxation semiconductors are materials dominated by free carrier transport and defined by the condition that the dielectric relaxation time _D is longer than the free carrier lifetime ₀. Novel transport behavior has been demonstrated, both theoretically and experimentally, to be associated with this regime of semiconductor behavior. This review surveys the history of the field, emphasizes recent experimental and modeling work and summarizes our current understanding of relaxation behavior in crystalline semiconductors.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

The magnetic structures of NdCu2 determined by single crystal neutron diffraction

We investigated the magnetic structure of NdCu₂ by means of neutron diffraction as a function of temperature between 1.5 K and 8 K in zero external field. The diffraction data were obtained on two single crystals with different orientations using the triple-axis-spectrometer TAS6 at the DR-3 reactor at Risø. Two magnetic phases were observed between 1.5K andT _N =6.5K. From 1.5 K to 4.1 K the magnetic reflections can be described by the commensurate wave vector =(3/5 0 0) and its higher harmonics 3 and 5. Below 2.5K the structure is completely squared-up. For 4.1 KT6.5 K the magnetic structure is incommensurate with the chemical lattice and can be described by the wave vector=(3/5 0 0) and its higher harmonies 3 and 5M. Below 2.5 K the structure is completely squared-up. For 4.1 K T 6.5 K the magnetic structure is incommensurate with the chemical lattice and can be described by the wave vector ^*=(0.62 0.044 0). In both phases the Nd-moments are oriented along the easyb-direction.     

Field screening in insulating crystals: The quasistatic case

A study is made of a metal-dielectric-semiconductor-dielectric-metal structure subjected to a linearly increasing external voltage. On the assumption of quasistatic screening conditions, the carrier-density and field distribution in the near-anode and nearcathode regions of the semiconductor are determined. This distribution proves to be nonuniform not only in the region of the surface space charge induced by the external field, but also within the interior of the semiconductor to a depth E₀·t_M/₀, where is the lifetime and the mobility of the carriers, E₀/₀ is the rise rate of the external field, and t_M is the Maxwellian relaxation time. The character of the distribution for opposite faces of the semiconductor is different, since in the near-cathode region for n-type semiconductors allowance must be made for the effect of the uncompensated space charge of the current carriers on the conductivity.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 7–10, February, 1973.We are indebted to G. M. Guro and V. B. Sandomirskii for a discussion of the work.     

Optical and photoelectrical properties of glassy GeS x

Absorption edge, index of refraction, density and spectral dependence of the photoconductivity were measured on amorphous layers of stoichiometric GeS and on glasses GeS _x (1<x<2). An attempt is made to estimate the product of the mobility, lifetime and quantum efficiency for=0·9 m and=1·54 Å.Presented in part at the Int. Conf. on High Resistence Semiconductors, Photoelectrets and Electrophotography, Varna, Bulgaria, November 1973.Authors acknowledge valuable discussions with drs S.Koc and B.Velický, as well as the help of dr. J.Drahokoupil with the X-ray experiments. The glassy samples were kindly prepared by ing. A.Hrubý.     

Kinetics of phase separation in ramified polymer blends of arbitrary topology

We present here a theoretical study of kinetics of phase separation within a mixture made of two chemically incompatible ramified polymers. For simplicity, we assume that they have the same topology. We are interested in the variation of the relaxation rate, _q, versus the wave number q, in the vicinity of the spinodal temperature. The kinetics is governed by local (Rouse) and reptation motions (faster and slower modes). For qR_G 1 (R_G being the gyration radius), kinetics is entirely controlled by local motions where each chain moves inside its own tube, and we show that the corresponding characteristic frequency, ^{-1}_q, scales as ^{-1}_{q G}q⁶, where _G is a known topological factor. For qR_G 1, however, kinetics is rather dominated by long-wavelength (reptation) motions where unlike ramified polymers creep inside a long tube. For this case, we find that ^{-1}_q ( 0 )q² (_c - ), where ( 0 ) is another known topological factor that represents the total mobility of free monomers belonging to connected chains and reticulation points, and _c accounts for the critical value of the segregation parameter. Finally, the derived relaxation rate must be compared to that relative to a linear polymer mixture.     

Influence of surface roughness on adsorbate mobility

Field-emission fluctuations of the coadsorption system W(112)Ni-K were investigated by the cross-correlation technique in two perpendicular crystallographic directions at various temperatures. In- and cross-channel movements show a considerable reduction of _max which is the time delay corresponding to the cross-correlation function maximum with increasing Ni coverage at a constant potassium probe concentration. _max, its activation energy and the signal velocity are discussed in terms of the well-known W(112)Ni surface structure.     

Simulating dislocation movement through a composite ensemble of forest dislocations and point obstacles

Simulation has been applied to NaCl-lattice crystals to examine the effects from the strength and relative concentration of point obstacles on sliding-dislocation movement through a composite ensemble of forest dislocations and point obstacles. The range in the parameter = _cr ^p /_cr=1.5–2.5, corresponds to the threshold value * of the proportion of forest dislocations in the composite ensemble above which the point obstacles affect the motion of the sliding dislocations through the composite ensemble, where _cr and _cr ^p are correspondingly the critical stresses for the passage of sliding dislocations through the one-component ensembles of forest dislocations and point obstacles in the composite. The sum of the squares of _cr ^f and _cr corresponds best to the square of the total stress for the passage of sliding dislocations through the composite ensemble.Kaluga Branch, N. É. Bauman Moscow State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 105–111, September, 1993.     

Spectral-Kinetic Characteristics of Pyrene Fluorescence in Model Systems and Membranes of Etioplasts

The decay kinetics parameters of monomer and excimer fluorescence of pyrene in artificial galactolipid protein-free micelles and membranes of prolamellar bodies (PLB) of etioplasts have been determined. A complex law of probe fluorescence decay in artificial and native membranes has been discovered. It has been found that the addition of protochlorophyllide (Pd) to lipid micelles led to a considerable reduction in the lifetime of the long-lived component of the fluorescence-decay kinetics of the monomer form of pyrene (₂) and to the appearance of luminescence in the region of 640 nm in the stationary spectra of fluorescence at excitation of the pyrene molecules present in the bilayer. In native membranes of etioplasts, the monomer duration ₂ did not depend on the pigment content and the Pd fluorescence upon excitation through pyrene was absent. The membranes of etioplasts and the pigment-containing artificial micelles did not differ in the ₂ value of the excimer. They only differed in the contribution of the long-lived component to the total fluorescence (low in native membranes). The pigment-protein interaction in the etioplast membranes and the absence from them of pigment directly associated with lipids are discussed.     

Spannungsverläufe Nach Wechseln der Verformungsgeschwindigkeit an Metalleinkristallen

The theoretical relations between _v and measured stress changes are discussed and compared with experimental results. For instantaneous change in the strain rate, the first deviation of the stress increase from the linearity ( _C ) can be used as a measure of _v for small deformation only. The comparison of _C with the extrapolated value _A enables to reveal the presence of recovery. The comparison of stress changes measured after a given rate change at the same strain on unrecovering (low temperatures) and recovering (higher temperatures) samples enables to differentiate between various types of recovery.     

Superradiating 4P-4S-3P cascade of sodium vapour arising on the leading edge of the exciting laser pulse

Investigations of the superradiating cascade of sodium vapour 4P-4S-3P ₁ = 2.21 µm and ₂=1.14 µm) arising on the leading edge of the exciting laser pulse were carried out. The dependences of the actual delay time _D of the ₁ pulse on the population rise time of the laser-excited 4P state were measured and compared with those calculated following the existing theoretical model. The dependence of the actual delay time _D on the inverse density of excited atoms 1/N* is also presented. Analysis of this dependence revealed the influence of the Doppler dephasing and of the second, ₂, transition on the formation of the ₁ superradiance.     

Multi-exponential analysis of DLTS

Deep-level transient spectroscopy (DLTS), which is widely used to characterize deep impurity centers in semiconductors, assumes a single exponential wave form for the transient junction capacitance. When there are several closely spaced energy levels this assumption is no more valid, and the conventional DLTS may lead to errorneous results. To overcome this difficulty we propose here a novel method which we call the multi-exponential DLTS(MEDLTS). The transient wave form of the junction capacitance is directly analysed into multi-exponential compouents using the nonlinear least-squares analysis program DISCRETE developed by Provencher. The resolved time constants of these components are then displayed in the form of aT ²–1/T plot. According to the results of simulation with various parameters MEDLTS is shown quite effective to resolve closely spaced energy levels which can not be resolved by the conventional DLTS. As an example of the application of this method deep levels in Si: Au were investigated. The results have shown that a single peak in conventional DLTS actually consists of two adjacent levels with activation energies and capture cross-sectionsE _B1=0.49 eV, _B1=1.1×10^–14cm² andE _B2=0.46 eV, _B2=1.3×10^–15 cm² and with amplitude ratio 11.     

Electron (muon) decay of a heavy lepton

Expressions are derived for the differential probability for the decay e(). The possibly nonzero mass of and the polarizations of both the decaying lepton and the charged lepton which is produced are all taken into account. A quantitative analysis is carried out for various masses of the neutrino and for various energies of the lepton emitted during the decay.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 97–100, June 1981.     

Effect of electron irradiation on the parameters of gallium arsenide pulsed diodes

It is shown that the current-voltage characteristics of diodes produced by various methods vary in approximately the same manner. The behavior of the capacitance C(U) during irradiation can be explained on the basis of the theories developed for planar p-n junctions and Schottky barriers. The recovery time of diodes always increases during irradiation with large doses ( 10¹⁶ electrons/cm²). At smaller doses for diodes of the Schottkybarrier type (weakly formed), _recov always increases with irradiation, perhaps due to a decrease in the concentration n; for strongly formed diodes (having parameters approximating those of diffused diodes), the _recov behavior is governed by the nature of the impurity distribution and by the ratio of the lifetime of the minority carriers to the diode time constant ¯R¯C. With > RC, a decrease in _recov may be observed as a result of a decrease in .Translated from Izvestia VUZ. Fizika, No. 4, pp. 109–113, April, 1970.     

Magnetoresistance in two-dimensional magnesium films of various thicknesses

The magnetoresistance of thin magnesium films in the weakly localized regime has been measured at 4.2 K as a function of film thickness. The results are analysed in a new and simple way based on the theory of Hikami et al. [1]. We use only two adjustable parameters, the inelastic relaxation time _i and the spin-orbit scattering time _so. Whereas _so is found to be almost independent of thickness, _i changes significantly. The variation of _i with thickness is discussed in the light of the theories for the enhanced electron-electron interaction, but it does not seem to tie up with any of the existing theories.     

Enhancement of conductance fluctuations in two-dimensional mesoscopic electron systems with valley structures

Conductance fluctuations are studied in twodimensional mesoscopic electron system with a two-hold valley degeneracy (n _v =2), which corresponds to the inversion layer of Si-MOSFET formed in (1,0,0) plane. It is shown that the intervalley scattering modifies conductance fluctuations depending on the ratio, Min { _c , _T }/ _v , where _v = ( – 2)/2 and _c , _T , and are, respectively, system traversal time, thermal diffusion time, intervalley scattering time and total life time of electrons. Conductance fluctuations are no longer universal and vary from G _univ 0.862·e ²/h to {ie223-5} at low temperatures even for isotropic systems. The conductance fluctuations increase with decreasing system size, increasing electron density and increasing intervalley scattering time. The effect of intervalley scattering is essentially the same as that of intersubband scattering as previously reported. At finite temperatures where _{T c} , the intervalley scattering modifies the fluctuations through the change in the energy correlation range to results in the reduction of the conductance fluctuations. In Si-MOSFET formed in (1, 1, 1) plane, wheren _v =6, more enhanced fluctuations are expected. Experimental studies are desired on theoretically predicted points.