Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

We have synthesized the composition x = 0.01 of the (Sr_1-xLa_x)₂(Ta_1-xTi_x)₂O₇ solid solution, mixing the ferroelectric perovskite phases Sr₂Ta₂O₇ and La₂Ti₂O₇. Related oxide and oxynitride materials have been produced as thin films by magnetron radio frequency sputtering. Reactive sputter deposition was conducted at 750 °C under a 75 vol.% (Ar) + 25 vol.% (N₂,O₂) mixture. An oxygen-free plasma leads to the deposition of an oxynitride film (Sr_0.99La_0.01) (Ta_0.99Ti_0.01)O₂N, characterized by a band gap E_g = 2.30 eV and a preferential (001) epitaxial growth on (001) SrTiO₃ substrate. Its dielectric constant and loss tangent are respectively Epsilon' = 60 (at 1 kHz) and tanDelta = 62.5 × 10⁻³. In oxygen-rich conditions (vol.%N₂ ≤ 15%), (110) epitaxial (Sr_0.99La_0.01)₂(Ta_0.99Ti_0.01)₂O₇ oxides films are deposited, associated to a larger band gap value (E_g = 4.55 eV). The oxide films permittivity varies from 45 to 25 (at 1 kHz) in correlation with the decrease in crystalline orientation; measured losses are lower than 5.10⁻³. For 20 ≤ vol.% N₂ ≤ 24.55, the films are poorly crystallized, leading to very low permittivities (minimum Epsilon' = 3). A correlation between the dielectric losses and the presence of an oxynitride phase in the samples is highlighted.     

Structural,chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C₂H₂ precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C₂H₂ concentration during deposition. A higher C₂H₂ flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H³/E². The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp³ bond content shows the highest elastic recovery during scratching.     

Surface characterization of CuSn thin films deposited by RF co‐sputtering method

CuSn thin films were deposited by the radio‐frequency (RF) magnetron co‐sputtering method on Si(100) with Cu and Sn metal targets with various RF powers. The thickness of the films was fixed at 200 ± 10 nm. The synthesized CuSn thin films mainly consisted of Cu₂₀Sn₆ and Cu₃₉Sn₁₁ phases, which was revealed by an X‐ray diffraction (XRD) study. The high‐resolution Cu 2p XPS and Cu LMM Auger electron spectra indicate that metallic Cu oxidized to Cu⁺ and Cu²⁺ as the RF power on Cu target increased. The atomic ratios of Sn⁰ and Sn⁴⁺ decreased, while that of Sn²⁺ increased with increasing RF power on the Cu target. The polar surface free energy (SFE) component has a different tendency in comparison with the total SFE and the dispersive SFE component. The dispersive SFE component was the dominating contributing factor to the total SFE compared with the polar SFE. Copyright © 2016 John Wiley & Sons, Ltd.     

A thermodynamic model of deposition by etching-enhanced reactive sputtering

Deposition by etching-enhanced reactive sputtering (DEERS) is believed to be a three-step process: plasma etching of a sputtering target, transport of volatile etch products to a substrate, followed by conversion of etch products adsorbed on the substrate to form a desired film material. While there are undoubtedly kinetic factors involved in this process, results of a thermodynamic analysis of the above process as a sequence of two chemical equilibrium reactors (target and substrate) correlates well with available experiments on oxide deposition and with optimum ratios of etchant to oxidant gases.     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Low emissivity Ag/Si/glass thin films deposited by sputtering

Si was deposited on the glass substrate as an interlayer for the 2-D growth of Ag thin films because Si has a strong binding energy against Ag and can lead to a negative surface energy change in Ag/glass. The Si interlayer induced an extremely smooth and flat Ag surface, which effectively reduced the resistance and enhanced the reflectance in the IR region. In particular, Ag (9 nm)/Si (3 nm)/glass showed 0.074 emissivity and ∼91% reflectance in the IR region with 67% transmittance in the visible region.     

Studies of Cu‐doped ZnS thin films prepared by sputtering technique

Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.     

Electrical properties of gadolinia-doped ceria thin films deposited by sputtering in view of SOFC application

Gadolinia-doped ceria (GDC) remains, up to now, the most promising candidate for replacing yttria-stabilised zirconia (YSZ) as electrolyte for solid oxide fuel cells (SOFC) operating at intermediate temperature. Literature data point out that GDC could be used as electrolyte, anode material, or interlayers for avoiding the chemical interactions occurring at the interfaces. In the present work, GDC thin layers were produced by d.c. reactive magnetron sputtering and deposited over a thickness domain between 450 nm and 5.5 µm. According to our knowledge, the deposition of GDC sputtered layers has never been reported. The physicochemical features of these thin films have been characterised by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Impedance measurements have been carried out in order to determine the electrical properties of electrolyte thin films and in particular their ionic conductivity.Presented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, 10–12 April 2003     

Hybrid ZnO/polymer thin films prepared by RF magnetron sputtering

Zinc oxide/poly(acrylic acid) (ZnO/PAA) multilayered hybrid films with different layer thicknesses were prepared by radio frequency magnetron sputtering. Zinc peroxide was used as precursor materials for the preparation of ZnO layers, since the zinc peroxide decomposes to ZnO during the film deposition. The films have a high transmittance in the visible region and exhibit visible photoluminescence emission. The band gap energy of the films—determined by the Tauc relationship—decreases with increasing layer thickness (3.40–3.36 eV) due to the increasing crystalline size of the ZnO particles. The morphological investigations showed that a real layered hybrid film structure formed.     

Characterization of AlN thin film prepared by reactive sputtering

AlN films with a preferred orientation <002> have been prepared on Si(100) substrates via DC reactive magnetron sputtering. X‐ray diffraction, atomic force microscopy, scanning electron microscopy, ellipsometer, and ultraviolet–visible–near infrared (UV–VIS–NIR) spectrophotometer were used to investigate the structural and optical properties of the AlN thin films. When the sputtering pressure is about 0.4 Pa, the flow ratio between nitrogen and argon is 1 : 3, and the growth temperature is 400 °C, the transmissivity of the AlN film is about 90% in the visible and near‐infrared region, and its optical band gap is ~5.84 eV. The refractive index of the thin films is about 2.05, which is lower than the bulk AlN refractive index. Copyright © 2016 John Wiley & Sons, Ltd.     

Direct crystallization of perovskite phase in PMN-PT thin films prepared by polyvinylpyrrolidone modified sol-gel processing and their properties

A modified sol-gel processing has been developed by using polyvinylpyrrolidone (PVP) as modifier and lead nitrate as lead source to synthesize (1−x)Pb(Mg_1/3,Nb_2/3)O₃-xPbTiO₃ (PMN-PT) thin films with x=0.23-0.43. With PVP additions, perovskite phase could directly crystallize from amorphous films at the temperature as low as 430 °C via bypassing the metastable phase-pyrochlore and crystallinity was significantly enhanced. The PVP addictives have been optimized with molecular weight <630 K and the ratio of PVP monomer/PMN-PT at 0.25-1.0. XPS analysis indicates that the chemical states of the elements in the well-crystallized PMN-PT films are close to the literature data for the PMN-PT single crystals and the films possess highly desired electrical and optical properties.     

The influence of A-site rare-earth for barium substitution on the chemical structure and ferroelectric properties of BZT thin films

Rare-earth (RE) doped Ba(Zr,Ti)O₃ (BZT) thin films were prepared by rf-magnetron sputtering from a Ba_0.90Ln_0.067Zr_0.09Ti_0.91O₃ (Ln=La, Nd) target. The films were deposited at a substrate temperature of 600 °C in a high oxygen pressure atmosphere. X-ray diffraction (XRD) patterns of RE-BZT films revealed a 〈001〉 epitaxial crystal growth on Nb-doped SrTiO₃, 〈001〉 and 〈011〉 growth on single-crystal Si, and a 〈111〉-preferred orientation on Pt-coated Si substrates. Scanning electron microscopy (SEM) showed uniform growth of the films deposited, along with the presence of crystals of about half-micron size on the film's surface. Transmission electron microscopy (TEM) evidenced high crystalline films with thicknesses of about 100 nm for 30 min of sputtering. Electron-probe microanalysis (EPMA) corroborated the growth rate (3.0-3.5 nm/min) of films deposited on Pt-coated Si substrates. X-ray photoelectron spectroscopy (XPS), in depth profile mode, showed variations in photoelectron Ti 2p doublet positions at lower energies with spin-orbital distances characteristic of BaTiO₃-based compounds. The XPS analysis revealed that lanthanide ions positioned onto the A-site of the BZT-perovskite structure increasing the MO₆-octahedra distortion (M=Ti, Zr) and, thereby, modifying the Ti-O binding length. Polarization-electric field hysteresis loops on Ag/RE-doped BZT/Pt capacitor showed good ferroelectric behavior and higher remanent polarization values than corresponding non-doped system.     

Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering

The magnetic characteristics of Ga_1−xMn_xN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO₂), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases.     

Synthesis of the perovskite ceramic Li3xLa2/3–xTiO3 by a chemical solution route using a triblock copolymer surfactant

The synthesis of the perovskite Li_3xLa_2/3–x□_1/3–2xTiO₃ by a chemical solution route, using a triblock copolymer surfactant, PEO_n–PPO_m–PEO_n, is described. This titanate is a non-hygroscopic fast lithium conductor and therefore is a good candidate for electrochemical applications. It is generally prepared by a conventional solid-state reaction (SSR) method. However this synthesis method does not allow the preparation of nanopowders or the formation of thin films. For these special purposes, synthesis by a chemical solution route, with the formation of a polymeric precursor during synthesis, has been investigated. By using the above-mentioned non-ionic surfactant, the preparation of nanopowders of complex oxides can be done. Furthermore, this way of synthesis leads to the formation of an intermediate polymeric precursor which can be easily spread on substrates to obtain films. We show that the formation of a pure phase of the perovskite Li_3xLa_2/3–x□_1/3–2xTiO₃ is highly dependent on the synthesis conditions, namely the presence of water in the solvent, the EO/metal ratio, the Li⁺ content in the precursor and the calcination temperature. The influence of these parameters on the microstructure of the oxide is studied by X-ray diffraction, scanning electron microscopy and granulometry. A powder of Li_3xLa_2/3–x□_1/3–2xTiO₃ (x = 0.10), with an average particles size of 200 nm, has been obtained. The ionic conductivity of this oxide is the same as the one obtained with oxide prepared by SSR (a bulk conductivity of 1.4 × 10⁻³ S/cm at 37 °C). The ceramic obtained from this powder after sintering at 1,150 °C shows a good pH response. This material can then be used as a sensitive membrane in a potentiometric pH sensor. The presence of hydrophobic PPO groups in the polymer precursor allowed preparing films of Li_3xLa_2/3–x□_1/3–2xTiO₃ with a good adherence on Pt substrate. This kind of synthesis is then very promising to prepare micro pH sensors.     

Lithium insertion into silicon films produced by magnetron sputtering

Using the method of magnetron-plasma sputtering of polycrystalline silicon target, amorphous silicon films 32–214 nm thick were produced on various (copper and titanium, polished and rough) substrates. A study of their charge-discharge characteristics under the galvanostatic conditions showed that all thin-filmed electrodes are capable of reversible lithium insertion. The amount of lithium inserted in the first cycles is close to the theoretical one. An analysis of composition and morphology of surface layer and also the behavior of reversible and irreversible capacities during cycling showed that the degradation of capacity is caused by the exfoliation of films from the substrate (the effect is more pronounced for the specimens with polished substrates) and somewhat breaking (cracking) of films. The thicker are the films, the severer is the disruption of silicon films in the cycling. The adhesion of films to the substrate surface is favored by the film roughness. At sufficiently high adhesion of films, their electrochemical properties only slightly depend on the nature (copper or titanium) of substrate.     

Preparation of films from aluminum acetylacetonate by plasma sputtering

Aluminum acetylacetonate has been reported as a precursor for the deposition of alumina films using different approaches. In this work, alumina‐containing films were prepared by plasma sputtering this compound, spread directly on the powered lowermost electrode of a reactor, while grounding the substrates mounted on the topmost electrode. Radiofrequency power (13.56 MHz) was used to excite the plasma from argon atmosphere at a working pressure of 11 Pa. The effect of the plasma excitation power on the properties of the resulting films was studied. Film thickness and hardness were measured by profilometry and nanoindentation, respectively. The molecular structure and chemical composition of the layers were analyzed by Fourier transform infrared spectroscopy and energy dispersive spectroscopy. Surface micrographs, obtained by scanning electron microscopy, allowed the determination of the sample morphology. Grazing incidence X‐ray diffraction was employed to determine the structure of the films. Amorphous organic layers were deposited with thicknesses of up to 7 µm and hardness of around 1.0 GPa. The films were composed by aluminum, carbon, oxygen and hydrogen, their proportions being strongly dependent on the power used to excite the plasma. A uniform surface was obtained for low‐power depositions, but particulates and cracks appeared in the high‐power prepared materials. The presence of different proportions of aluminum oxide in the coatings is ascribed to the different activations promoted in the metalorganic molecule once in the plasma phase. Copyright © 2013 John Wiley & Sons, Ltd.     

Effects of sputtering current on the bonding structure and mechanical properties of diamond‐like carbon films deposited by MFPUMST

Diamond‐like carbon (DLC) films on glass wafers were produced by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different sputtering current. The chemical bonding of carbon characterized by Raman spectroscopy and X‐ray photoelectron spectroscopy (XPS) show that the sp³ fraction in DLC films increases with increasing sputtering current from 100 to 300 mA, and then decreases above 300 mA. Mechanical properties like nano‐hardness and elastic recovery for these films under different sputtering currents analyzed by a nano‐indentation technique show the same tendency that nano‐hardness and elastic recovery increase with increasing sputtering current from 100 to 300 mA, and then decrease with increasing sputtering current from 300 to 400 mA. These results indicate that the sp³ fraction in the prepared DLC films is directly related to nano‐hardness and elastic recovery. The results shown above indicate that the parameter of the preparation—sputtering current has a strong influence on the bonding configuration of the deposited DLC films. The mechanism of sputtering current on the sp³ fraction is discussed in this paper. Copyright © 2009 John Wiley & Sons, Ltd.     

TixNy团簇结构的密度泛函研究

采用杂化密度泛函方法(B3LYP)和有效核势基组预测了Ti_xN_y (x≤3, y≤2)团簇的结构及稳定性, 并分析了可能存在构型的电子结构. 结果表明Ti₂N中体系的自旋多重度由Ti原子决定. Ti₃N中随着N的配位数增加, N的负电荷增加, 平均每个Ti向N提供约0.3个电子. 从Ti₂N₂可能稳定构型分析, 成键数目越多, 能量上越有利, 且Ti—N键的数目的增加, 将削弱N—N间的成键.     

The chemical composition and bonding structure of B–C–N–H thin films deposited by reactive magnetron sputtering

The chemical composition and bonding structures of B–C–N–H films fabricated by medium frequency magnetron sputtering, with N₂+CH₄+Ar gas mixture sputtering the boron target, were investigated. XPS and FTIR spectrometric analyses show that the increase of CH₄ flow rate during deposition causes an increase of the C content in the films. The increase in the CH₄ flow rate promotes an increase in the B–C, C–N single and C?N double bonds which are the components of the hybridized B–C–N bonding structure. From the results of Raman spectroscopy analysis, it is seen that the intensity of the D band of the films' Raman spectrum decreases with increasing CH₄ flow rate, indicating a decrease of the sp²‐phase content or the sp² C cluster size. The decreases of I_D/I_G also reflect the formation of more boron‐ or nitrogen‐ bound sp³‐coordinated carbons in the films. Copyright © 2009 John Wiley & Sons, Ltd.     

Chemical vapor deposition and electric characterization of perovskite oxides LaMO3 (M=Co, Fe, Cr and Mn) thin films

Oxides with a perovskite structure are important functional materials often used for the development of modern devices. In view of extending their applicability, it is necessary to efficiently control their growth as thin films using technologically relevant synthesis methods. Pulsed spray evaporation CVD was used to grow several perovskite-type oxides on planar silicon substrates at temperatures ranging from 500 to 700 °C. The optimization of the process control parameters allows the attainment of the perovskite structure as a single phase. The electrical characterization using the temperature-dependent conductivity and thermopower indicates the p-type conduction of the grown films and shows a decreasing concentration of the charge carrier, mobility and band gap energy in the sequence LaCoO₃>LaMnO₃>LaCrO₃>LaFeO₃. The investigation of the electric properties of the obtained perovskite thin films shows the versatility of CVD as a method for the development of innovative devices.