Small-angle X-ray scattering studies of a-Si1−xGex: H alloys

Small-angle X-ray scattering (SAXS) is used to study a-Si:H, a-Ge:H, and a-Si_1−xGe_x: H alloys prepared by plasma-enhanced CVD methods. These amorphous semiconductors show various types of scattering characteristics related to their composition, deposition method, and deposition conditions. For poor quality alloys at low scattering vectors, h, the scattering curve shows an I(h)h⁻² dependence, because of the fractal nature of the inhomogeneities present. Also, a-Ge:H shows these features. Therefore, it is concluded that the inhomogeneities arise principally from clustering of Ge atoms.     

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

SrS_1−xSe_x and ZnS_1−xSe_x thin films were deposited by the atomic layer deposition (ALD) technique using elemental selenium as the Se source, thus avoiding use of H₂Se or organometallic selenium compounds. X-ray diffraction (XRD) analysis showed that the films were solid solutions and X-ray photoelectron spectroscopy (XPS) data showed that the surface of both ZnS_1−xSe_x and SrS_1−xSe_x were covered with an oxide and carbon-containing contaminants from exposure to air. The oxidation of SrS_1−xSe_x extended into the film and peak shifts from sulfate were found on the surface. Luminance measurements showed that emission intensity of the ZnS_1−xSe_x:Mn alternating current thin film electroluminescent (ACTFEL) devices at fixed voltage was almost the same as that of the ZnS:Mn device, while emission intensity of the SrS_1−xSe_x:Ce devices decreased markedly as compared to the SrS:Ce device. Emission colors of the devices were altered only slightly due to selenium addition.     

MOVPE growth of strain-compensated 1300 nm In1−xGaxAsyP1−y quantum well structures

Different concepts for achieving strain-compensated quantum well structures emitting at 1300 nm have been investigated. Structures employing up to eight compressively strained wells with the same x in well and barrier exhibits excellent structural and optical properties, including very high photoluminescence efficiency. Increased number of quantum wells beyond 8 resulted in deteriorated materials quality, most likely due to accumulated strain-induced roughness of the growing surface. Good laser characteristics, including T₀ values of 64 K, were demonstrated for strain-compensated structures with tensile wells.     

Directional solidification of InxGa1−xAs

We have investigated a constitutional supercooling and segregation phenomena in In_xGa_1−xAs crystals unidirectionally solidified in a vertical system. The constitutional supercooling generates characteristic fluctuations of composition along the growth direction and this can be explained by a free nucleation ahead from the growth interface. The macroscopic compositional profiles of the grown crystals suggest that a transport of solute is mainly dominated by the diffusion. Such a growth mode is partly attributed to the difference in density between InAs and GaAs.     

Compositional dependence of the optical gap in Ge1−xSx, Ge40−xSbxS60 and (As2S3)x(Sb2S3)1−x non-crystalline systems

An attempt is made to calculate the compositional dependence of the optical gap (E_g) in Ge_1−xS_x, Ge_40−xSb_xS₆₀ and (As₂S₃)_x(Sb₂S₃)_1−x non-crystalline systems in an alloy-like approach. From the comparison of both the experimental dependence of E_g and the calculated ones using the Shimakawa relation [E_{g AB} = YE_{g A} + (1−Y)E_{g B}] it is assumed that this equation is useful for such systems or parts of the systems which behave like almost ideal solutions.     

Electronic traps in mixed Si1−xGexO2 films

Thermally stimulated luminescence (TSL) and infrared (IR) spectroscopy were measured in plasma grown Si_1−xGe_xO₂ (x=0, 0.08, 0.15, 0.25, 0.5) with different thicknesses (12–40 nm). A comparison with the TSL properties of thermally grown SiO₂ and GeO₂ was also performed. A main IR absorption structure was detected, due to the superposition of the peaks related to the asymmetric O stretching modes of (i) Si–O–Si (at ≈1060 cm⁻¹) and (ii) Si–O–Ge (at 1001 cm⁻¹). Another peak at ≈860 cm⁻¹ was observed only for Ge concentrations, x>0.15, corresponding to the asymmetric O stretching mode in Ge–O–Ge bonds. A TSL peak was observed at 70°C, and a smaller structure at around 200°C. The 70°C peak was more intense in all Ge rich layers than in plasma grown SiO₂. Based on the thickness dependence of the signal intensity we propose that at Ge concentrations 0.25x0.5 TSL active defects are localised at interfacial regions (oxide/semiconductor, Ge poor/Ge rich internal interface, oxide external surface/atmosphere). Based on similarities between TSL glow curves in plasma grown Si_1−xGe_xO₂, thermally grown GeO₂ and SiO₂ we propose that oxygen vacancy related defects are trapping states in Si_1−xGe_xO₂ and GeO₂.     

Molecular beam epitaxy of strained Si1−xGex layers on patterned substrates

Epitaxial Si_1-xGe_x layers have been grown on patterned Si(001) substrates. Mesa-like structures of 1.4 μm height on the surface limited by inclined {111} planes were used. Structure dimensions between 10 and 0.2 μm were chosen to allow the mesas to relieve elastically under the strained layer. The film growth, the crystallographic perfection and the relaxation of strained Si_1-xGe_x layers were investigated by transmission electron microscopy (TEM) including in situ annealing. The relaxation mechanism and the control of dislocation generation on top of the mesas are discussed.     

Photoluminescence excitation spectroscopy of GaP1−xNx alloys: conduction-band-edge formation by nitrogen incorporation

We have investigated the conduction-band-edge formation in GaP_1−xN_x alloys by nitrogen incorporation into GaP using photoluminescence excitation (PLE) spectroscopy. The PLE spectra of GaP_1−xN_x alloys with various nitrogen concentrations show that the absorption edge shifts to lower energies with increasing nitrogen concentration. From the nitrogen concentration dependence of the absorption edge energy we found that the conduction-band-edge formation in GaP_1−xN_x alloys originates from the formation of the A line.     

Photocurrent measurements on GaAs1−xNx epilayers grown by metalorganic chemical vapor deposition

GaAs_1−xN_x epilayers were grown on a GaAs(0 0 1) substrate by metalorganic chemical vapor deposition. Composition was determined by high resolution X-ray diffraction. Band gap was measured from 77 to 400 K by using photocurrent measurements. The photocurrent spectra show clear near-band-edge peak and their peak energies drastically decrease with increasing nitrogen composition due to band gap bowing in the GaAs_1−xN_x epilayers. Those red shifts were particularly notable for low nitrogen compositions. However, the shifts tended to saturate when the nitrogen composition become higher than 0.98%. When the nitrogen composition is in the range 1.68–3.11%, the measured temperature dependence of the energy band gap was nicely fitted. However, the properties for the nitrogen composition range 0.31–0.98% could not be fitted with a single fitting model. This result indicates that the bowing parameter reaches 25.39 eV for low nitrogen incorporation (x=0.31%), and decreases with increasing nitrogen composition.     

The polycarbosilane-to-SixC1−x conversion studied by inelastic neutron scattering and infrared absorption

Polycarbosilane (PC) is a precursor which is converted to Si_xC_1−x fibers by pyrolysis in an inert gas atmosphere. The changes in the atomic vibrational spectrum during the conversion process from PC to Si_xC_1−x have been examined by means of inelastic neutron scattering (INS) and infrared absorption (IR). The existence of transverse-optical(TO)- and longitudinal-optical(LO)-like phonon modes due to amorphous SiC clusters was established in the original and pyrolyzed PC by INS measurements. After pyrolyzing at 700–800°C, these modes appear distinctly around 730 and 930 cm⁻¹, respectively, in the INS spectra. Pyrolysis at 1000°C makes these TO- and LO-like phonon modes sharper.     

Design and optimisation of AlxGa1−xAs/AlyGa1−yAs multilayer structures for visible wavelength applications

Quantum wells with excitonic features in the visible wavelength range were designed using the Al_xGa_1−xAs/Al_yGa_1−yAs material system, and grown using low pressure metal organic vapour phase epitaxy. Characterisation of these quantum well samples was carried out by using photovoltaic spectroscopy, photoluminescence, differential reflectance or photoreflectance techniques. These measurements showed that excitonic absorption in the 520–630 nm range could be achieved using these AlGaAs quantum wells.     

Thermodynamic analysis of the MOVPE growth of InxGa1−xN

A chemical equilibrium model is applied to the growth of the In_xGa_1−xN alloy grown by metalorganic vapor-phase epitaxy (MOVPE). The equilibrium partial pressures and the phase diagram of deposition are calculated for the In_xGa_1−xN alloy. The vapor-solid distribution relationship is discussed in comparison with the experimental data reported in the literature. It is shown that the solid composition of the In_xGa_1−xN alloy grown by MOVPE is thermodynamically controlled and that the incorporation of group III elements into the solid phase deviates from a linear function of the input mole ratio of the group III metalorganic sources under the conditions of high mole fraction of decomposed NH₃ (high value of ), high temperature and low input V/III ratio. The origin of the deviation of the solid composition from the linear relation is also discussed.     

X-ray scattering studies of the short and medium range ordering in AsxTe1−x glasses

The structures of As_xTe_1−x(x = 0.2, 0.4, and 0.5) glasses are studied using the differential X-ray anomalous scattering technique. The partial distribution functions have also been obtained for the stoichiometric As₂Te₃ glass, giving information on the medium range ordering. All the glasses show chemical disorder to differing extents, the As₂Te₃ glass being the most disordered. The Te coordination number undergoes a change at x=0.4 where it is 2.5 compared with 2 for AsTe. This change indicates the existence of about 50% of threefold Te sites in the stoichiometric glass, as well as in the Te-rich glasses. Some of the physical properties of the glasses may be explained based on these results.     

Solubility of YBa2Cu3O7−δ and Nd1+xBa2−xCu3O7±δ in the BaO/CuO flux

The knowledge of the phase relations and solubilities in the Y–Ba–Cu–O and Nd–Ba–Cu–O systems are of fundamental importance for crystal growth and liquid-phase epitaxy of YBa₂Cu₃O_7−δ (YBCO) and Nd_1+xBa_2−xCu₃O_7±δ (NdBCO). The determination of the solubility curve of YBCO and NdBCO in a BaO/CuO flux containing 31 mol% BaO was done by observation of the formation and dissolution of crystals on the surface of the high-temperature solution. The heat of the solution of YBCO at 1000°C was found to be 34.7 kcal/mol, and for NdBCO at 1060°C, it was found to be 28.1 kcal/mol. The determination of the solubility curves requires special care, and the problems of the time-dependent shift of the solution composition due to the corrosion of the crucible is discussed. The scatter of the solubility data published by different authors could be due to the use of solutions with different Ba : Cu ratios, different determination methods, i.e. different crystallization mechanisms, different crucibles and starting chemicals.     

Elastic constant anomaly in Fe80−xMoxB20 metallic glasses

The extensional sound velocities V_E of Fe_80−xMo_xB₂₀(x = 6, 7, 8) metallic glasses have been measured between 100 and 600 K in a saturating magnetic field. Young's modulus (E = _E², = density) shows anomalous temperature dependence at and below the magnetic transition temperature of each glass studied. These anomalies are interpreted as arising from the change of long-range spin coupling energy at the Curie temperature in a molecular field approximation. Comparison is made with similar effects in other crystalline and non-crystalline magnetic materials.     

Non-linear As(P) incorporation in GaAs1−yPy on GaAs and InAs1−yPy on InP

We find anion incorporation into both GaAs_1−yP_y on GaAs and InAs_1−yP_y on InP during gas source molecular beam epitaxy (GSMBE) is not linearly related to the hydride gas fluxes within our reactor. The deviation from an ideal model, i.e., y = ƒ_P/(ƒ_P+ƒ_As), where As(P) is the flux of AsH₃ (PH₃), can be as large as a factor of two. GaAsP exhibits the largest degree of nonlinearity and incorporation is found to depend quadratically on the fluxes over a wide range of flux ratio. Significant deviations are also found for InAsP; however, anion incorporation can be modeled with y = ƒ_P/(ƒ_P+βƒ_As).