A study of Raman spectroscopy and low-temperature specific heat in gel-synthesized amorphous silica

A comparative study of low-temperature specific heat (1.5–25 K), C_p, and low-frequency Raman scattering (<150 cm⁻¹) has been performed in amorphous silica samples synthesized by sol–gel method (xerogels) and thermally densified in a range of densities, from ρ=1250 kgm⁻³ to ρ=2100 kgm⁻³, close to the density of the melt quenched vitreous silica (v-SiO₂). The present analysis concerns the application of the low-energy vibrational dynamics as an appropriate tool for monitoring the progressive thermal densification of silica gels. By comparison with v-SiO₂, the Raman and thermal properties of xerogels with increasing thermal treatment temperature revealed the following important results: (i) the existence of a critical treatment temperature at about 870°C, where a homogeneous viscous sintering produces full densification of the samples. This effect is detected by the observations of the Boson peak in Raman spectra at about 45 cm⁻¹ and of a peak in C_p(T)/T³, very close to those observed in v-SiO₂; (ii) in silica xerogels treated at temperatures less than about 800°C, the low-frequency Raman scattering is greater, with a continuous decreasing unstructured shape, and the Boson peak is not detected in the spectra.     

EXAFS and XANES joint analyses for semiconducting vanadium phosphate glasses

Vanadium EXAFS spectra of 50V₂O₅-50P₂O₅ glasses with different C = V⁺⁴/V_tot have been measured. The V-O distances increase by ΔR₁ = (0.03 ± 0.02) Å to ΔR₂ = (0.07 ± 0.03) Å going from a glass with C = 0.64 to C = 0.84 and from C = 0.51 to C = 0.84, respectively. The EXAFS data show a basically similar structure of the vanadium sites for both the V⁴⁺ and V⁵⁺ ionic states. The density of the glasses increases with C from the value d₁ = 2.81 g/cm³ for C = 0.51 to d₂ = 2.92 g/cm³ for C = 0.84 indicating a more random packing of glass units.     

Monte Carlo simulations of Meyer-Neldel effect on carrier time-of-flight in a-Si:H

We present Monte Carlo simulations of multiple-trapping transport with Meyer-Neldel effect in a-Si:H assuming exponential band tails. The transit time t_T, and the dispersion parameters, ₁ and ₂, before and after the transit time, are extracted from the simulated currents. The simulations show that including the Meyer-Neldel effect improves the agreement of ₁ and ₂ with experimental data, both at low and high temperatures and fits the time-of-flight drift mobility measurements. Best fits to the data yield T₀ = 263 K, T_{MN = 464 K}, v₀₀ = 5 × 10⁹ s⁻¹ and μ₀ = 4 cm² V⁻¹ s⁻¹ for electrons and T₀ = 409 K, T_{MN = 809 K}, v₀₀ = 6.5 × 10¹⁰ s⁻¹ and μ₀ = 0.5 cm² V⁻¹ for holes.     

Thermal stability and crystallization kinetics of new As–Ge–Se–Sb glasses

Thermal stability and crystallization kinetics of As₁₄Ge₁₄Se_72−xSb_x (where x = 3, 6, 9, 12 and 15 at.%) glasses are studied by the differential scanning calorimetry. The values of the glass transition temperature (T_g) and the peak temperature of crystallization (T_p) are found to be dependent on heating rate and antimony content. From the heating rate dependence of T_g and T_p the values of the activation energy for glass transition (E_t) and the activation energy for crystallization (E_c) are evaluated and their composition dependence discussed. Crystallization studies have been made under non-isothermal conditions with the samples heated at several uniform rates. Using a recent analysis developed for non-isothermal crystallization studies, information on some aspects of the crystallization process has been obtained. The stability calculations emphasized that the thermal stability decreases with increasing the Sb content.     

Homogeneous line width in a zinc borate glass activated by Eu

In this work we report on the temperature depedence of the homogeneous line width (Γ_h) in 4ZnO · 3B₂O₃:Eu³⁺ glass in the region between 30 K and room temperature. The time resolved resonant fluorescence line narrowing technique was applied to the ⁷F₀ ↔ ⁵D₀ transition of Eu³⁺. We obtain that Γ_h follows the commonly found behaviour T² in the whole range of temperature (30–300 K). The Γ_h is comparable to that measured in borate glasses with a small amount of network modifier. This result, together with a linear increase of Γ_h with the excitation energy within the inhomogeneous profile, is indicative of a specific local environment around the Eu³⁺ ion in the zinc borate glass.     

Cation site occupation by Ag/Na ion-exchange in R2O–Al2O3–SiO2 glasses

Ag⁺/Na⁺ ion-exchanged R₂O–Al₂O₃–SiO₂ glasses with uniform concentration profile of Ag⁺ and Na⁺ were prepared by heat treatment in molten silver salt followed by holding at the same temperature in an ambient atmosphere. Their glass transition temperature (T_g) and thermal expansion coefficient (TEC) were measured and structures were investigated using ²⁹Si-MAS NMR, ²⁷Al-MAS NMR, IR and Raman spectroscopies. Both T_g and TEC decreased with increase of the exchange ratio, but T_g was still above the ion-exchange temperature of 400°C even for the fully exchanged sample. The ²⁹Si- and ²⁷Al-MAS NMR spectra were mostly unchanged and no sign of the structural alteration of the glass network was observed. On the other hand, the vibrational spectra showed remarkable peak shifts depending on the exchange ratio. From these structural results, it was found that when the exchange ratio was low, the introduced Ag⁺ ions were stabilized at the non-bridging oxygen (NBO) site, and then Na⁺ ions in AlØ₄ site were exchanged by Ag⁺ ions after full replacement of NBO sites, where Ø represents the bridging oxygen.     

Microstructure and growth rate of chemical vapour deposited TiN films in a vertical cold wall reactor

TiN films were grown on SUS304 substrates heated by an induction furnace in a vertical cold wall reactor. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction were used to characterize the microstructures of films obtained at different deposition conditions (temperature, gas flow rate and gas composition). Film structures obtained in the present vertical reactor had the following features compared with those in the tubular reactor: (1) Abnormally grown “star-shaped” crystals were observed on the surfaces of films deposited in the following ranges of total gas flow rate (Q_T), temperature (T) and partial pressures (P): 9.0×10⁻⁶ ≤ Q_T ≤ 1.6×10⁻⁵ m³ s⁻¹, 1223 ≤ T ≤ 1273 K, 0.92 ≤ P_TiCl4 ≤ 6.18 kPa, P_H2 = P_N2. The matrix grains were responsible for (211) preferred orientation. (2) Surface morphologies did not vary so much with P_TiCl4. On the other hand, a drastic change was brought about by adding HCl to the source gas, i.e., plate-shaped crystals dominated and the large “star-shaped” crystals were no longer present. (3) The apparent activation energy for deposition reaction was 230 kJ/mol (1173 ≤ T ≤ 1273 K) and 76.5 kJ/mol (1273 ≤ T ≤ 1373 K) at P_TiCl4 = 2.43 kPa and P_H2 = P_N2 = 49.45 kPa.     

Structural, thermal and dielectric studies on a new solution grown 4-dimethylaminopyridinium dihydrogen phosphate crystal

Single crystals of 4-dimethylaminopyridinium dihydrogen phosphate (DMAPDP) (C₇H₁₃N₂PO₄) were grown by the solvent evaporation method. The three-dimensional structure was solved by the single-crystal X-ray diffraction method which belongs to triclinic crystal system and the molecular arrangements in the crystal were studied. The thermal behaviour was investigated using differential scanning calorimetry (DSC) and no phase transition was identified in the temperature region −150 to 230 °C. The thermal parameters—thermal diffusivity (), thermal effusivity (e), thermal conductivity (K) and heat capacity (C_p) of DMAPDP were measured by an improved photopyroelectric technique at room temperature. Dielectric constant and dielectric loss of the grown crystal were evaluated for the frequency range 1–200 KHz in the temperature region 28–135 °C. The Vicker's hardness was measured as 42.2 for a load of 98.07 mN. The laser induced surface damage threshold of DMAPDP crystal was found to be 4.8 GW/cm² with nanosecond Nd:YAG laser.     

Density and surface tension of molten calcium fluoride

The density and the surface tension of molten calcium fluoride have been measured in the temperature range from 1690 to 1790 K by an improved Archimedian method and a ring depressing technique (J. Crystal Growth 187 (1998) 391), respectively. The ring depressing technique was demonstrated as an effective technique to measure the surface tension in comparison with the conventional ring pulling technique. The density varied with the temperature change corresponding to a linear relationship: ρ=3.767−6.94×10⁻⁴T (K). The density of the CaF₂ melt at the melting point is 2.594 g/cm³, which is equal to the result obtained by Shiraishi and Watanabe (Bull. Res. Inst. Miner. Dressing Metal, Tohoku Univ. 34 (1978) 1), but the temperature coefficient of the density is different from the results obtained by other investigators. The thermal expansion coefficient of calcium fluoride melt linearly increases with temperature heating. The surface tension of molten calcium fluoride indicates a negative linear relationship as a function of the melt temperature: γ(T)=442.4−0.0816×T(K) (mN/m). The surface tension measured using the ring depressing technique is larger than those results obtained by other techniques.     

Contributions on the thermal behaviour of sulfates XI. On the chemical vapour transport of Fe2(SO4)3 with HCl; thermochemical calculations and experimental results

Using HCl as a transport agent, well-shaped crystals of rhombohedral Fe₂(SO₄)₃ with edge length up to 1 mm were formed in the less hot zone of a silica ampoule. The dependence of the deposition rate on the mean transport temperature for a constant concentration of the transport agent (C = 4.5 × 10⁻² mmol HCl/cm³) shows a distinct maximum at = 560°C. Additionally, the influence of the concentration of the transport agent at a constant temperature gradient was investigated. On the basis of thermochemical calculations, an explanation of the observed transport behaviour is given in the present paper.     

SIMS study of the concentration of dopants in LPCVD silicon thin films

Measurements of solid phase dopant concentration (S) of LPCVD Si thin films as a function of substrate temperature (T_s = 500−640 ° C) and gas phase doping ratio (R = 1 × 10⁻⁵ −4 × 10⁻²) by SIMS indicate different behaviors of P and B in the films. A linear relation S = b(T)R is observed for B-doped film with b(T) varying from 4 to 50 depending on T_s. Boron-doped microcrystalline film has a higher doping efficiency than that of P-doped ones.     

金红石型Ti1-2xCrxMoxO2黑色色料制备及其性能研究

以TiO₂、Cr₂O₃和MoO₃为主要原料,采用固相反应法合成了金红石型Ti_1-2xCr_xMo_xO₂(x=0、0.05、0.10、0.15、0.20)色料。研究了Cr/Mo共掺杂量和煅烧温度对Ti_1-2xCr_xMo_xO₂色料的晶型结构、呈色性能和微观形貌等的影响。研究结果表明,5%~15%摩尔分数的Cr/Mo等量共掺杂都获得单相金红石型结构黑色色料,均可促进锐钛矿向金红石转变,且Mo掺杂有利于提高Cr在TiO₂晶格中的固溶度。随Cr/Mo共掺杂量增加,样品的黑度(L^*值)呈先减小后增大的趋势,而红色度(a^*值)和黄色度(b^*值)都表现出相反的趋势。煅烧温度在950~1 100 ℃时,样品的色度参数变化相对较小。在1 100 ℃煅烧得到的Ti_0.70Cr_0.15Mo_0.15O₂色料黑色呈色性能最佳,其L^*、a^*和b^*值分别为24.41、2.12和-2.53,且在陶瓷釉中表现出良好的呈色性能和化学稳定性。适量Cr/Mo共掺杂使TiO₂晶格产生畸变和电荷缺陷,从而吸收绝大部分可见光,是其呈现黑色的主要原因。     

Electric field induced percolation

The I–V characteristics of heat-treated polyacrylonitrile (PAN) thin film samples obtained by pyrolysis at temperatures T_p up to 550°C are considered. The effect of iodine-doping is investigated by comparison with undoped material. The I–V characteristics of doped samples exhibit linear behaviour at low voltage then a strong increase of conductivity. The bend shifts down to low voltages when the pyrolysis temperature T_p is increased. Experimental results are interpreted with the help of two randomly distributed phases in the medium in which doping involves an electric field aided percolation phenomenon.     

Sub-Tg mechanical relaxation of a La55Al25Ni20 amorphous alloy

Dynamic mechanical properties of an amorphous La₅₅Al₂₅Ni₂₀ alloy were measured by a forced oscillation method in the temperature range from room temperature to 453 K, just below the glass transition temperature (T_g = 481 K). The internal friction at a constant frequency 62.8 rad/s of this alloy showed a peak at about 400 K and the peak position shifts with frequency. Structural relaxation reduces the magnitude of the relaxation peak but has little affect on the peak position. Using the time-temperature superposition process, master curves for storage E′ (ln ω) and loss E″ (ln ω) moduli are constructed. Activation energy of the relaxation obtained from shift factors is low, 100 kJ/mol, which is close to that for diffusion of the Al in Al and Ni in Al. The relaxation spectra are very broad with a half width of 2 3 decades.     

Temperature coefficient of electronic polarizability in optical glasses

The temperature coefficient of refractive index dn/dT and that of volume expansion β have been measured by an interferometric procedure designed to determine the coefficients simultaneously, with one sample. The temperature coefficient of electronic polarizability φ have been calculated from dn/dT and β. φ is expressed as the sum of the contributions of each glass component, φ_i·φ_i is expressed as follows: φ_i = ß_iγ_i, where ß_i is the thermal change in cation-oxygen distance and γ_i is the change in electronic polarizability due to the inter-ionic distance change. φ_i decreases as the ionic field strength z/a² of the cation increases, which is the same tendency as that of ß_i. γ_i, calculated from φ_i and ß_i, gradually increases as z/a² increases. This means that φ_i is mainly determined by the elongation of the inter-ionic distance, and it also suggests that the deformation of the electron cloud of oxygen ion due to the inter-ionic distance change, γ_i becomes larger, as the electronic polarizing power of the cation increases.     

Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

The influence of the boron doping level in the range of 1 × 10¹⁵-2 × 10¹⁹ cm⁻³ on the position of the oxidation-induced stacking fault ring (R-OSF) in silicon crystals has been investigated by experiments and numerical simulation. For low boron-doped crystals, the position of the R-OSF is described by a critical value C_crit defined by the ratio of the pull rate and the temperature gradient in the crystal at the solid/liquid interface. Boron concentrations higher than 10¹⁷ cm⁻³ shift the position of the R-OSF towards the wafer center without change of growth parameters. The critical value C_crit converts into a function C_crit(C_B, depending linearly on the boron concentration C_B. Crystal-originated particles (COP) and gate oxide integrity (GOI) yield distributions which are consistent with the R-OSF pattern. A low COP density and a high GOI yield are observed outside the ring; a high COP density and a medium GOI yield in the inner region bordered by the ring. It is assumed that boron atoms modify the thermodynamical properties of vacancies and self-interstitials.     

铁离子掺杂对铜铬黑颜料呈色性能的影响

为改善CuCr2O4黑色颜料呈色性能,将Fe3+掺杂进入CuCr2O4晶体中,采用共沉淀法制备CuCr2-xFexO4(x=0,0.04,0.05,0.06,0.07),并对所制备样品进行TG-DTA、XRD、SEM、Raman、XPS、UV-Vis吸收光谱和色度值的测试与表征.结果表明,Fe以三价态固溶进入Cr3+位...     

The structural relaxation and glass transition of La---Al---Ni and Zr---Al---Cu amorphous alloys with a significant supercooled liquid region

An amorphous phase with a wide supercooled liquid region, > 50 K, was found to form over wide composition ranges in the La---Al---Ni and Zr---Al---Cu systems. The largest values for the temperature span between the crystallization temperature, T_x, and the glass transition temperature, T_g, ΔT_x(-T_x−T_g), are 69 K for La₅₅ Al₂₅Ni₂₀ and 88 K for Zr₆₅Al_7.5Cu_27.5. The structural relaxation behavior on annealing was examined for the two amorphous alloys with the largest ΔT_x values. The magnitude of the structural relaxation increases gradually with increasing annealing temperature, T_a, and then rapidly in the T_a range slightly below T_g and decreases significantly on annealing T_g. The rapid increase in the magnitude of the structural relaxation on annealing near T_g is due to the glass transition. The single-stage structural relaxation indicates that there is no distinct difference in relaxation times (atomic bonding forces) between the constituent atoms in the two metal-metal-type amorphous alloys. The existence of an optimum bonding state is thought to cause the wide supercooled liquid region for the two amorphous alloys.     

铋系化合物改性的新型三元弛豫铁电体的性能研究

钛酸钡(BaTiO₃)陶瓷作为传统的介质电容器材料,其强铁电性会导致储能密度低下,但通过掺杂可以削弱铁电性来获得弛豫铁电体,提高储能性能。利用铋系化合物可增强弛豫特性,本文设计了BiScO₃和(Sr_0.7Bi_0.2)TiO₃取代改性的BaTiO₃基三元陶瓷材料: (0.99-x)Ba(Zr_0.1Ti_0.9)O₃-x(Sr_0.7Bi_0.2)TiO₃-0.01BiScO₃(缩写为BZT-xSBT-BS)。采用传统固相法制备的BZT-xSBT-BS陶瓷,相结构没有因为掺杂发生改变,在室温下均为纯的三方相钙钛矿结构。介电和铁电的测试与分析表明,BZT-xSBT-BS陶瓷具有典型的弛豫铁电特性。由于不等价离子Sr²⁺、Bi³⁺的掺杂导致界面松弛极化,可以增大BZT-xSBT-BS陶瓷的介电常数,但是受制于其慢的响应速度,陶瓷的介电损耗也显著增加。适量(Sr_0.7Bi_0.2)TiO₃可以提升BZT-xSBT-BS陶瓷的介电、铁电、应变和储能性能,x=0.015时的BZT-xSBT-BS陶瓷的综合性能较优:ε_r~10 372,tanδ~0.019,P_max=16.42 μC/cm²,E_c=1.41 kV/cm,S⁺_max=0.12%(@40 kV/cm),W_D=0.181 J/cm³,η=80.4%(@60 kV/cm)。     

Inelastic neutron scattering on silica xerogel porous systems

New coherent inelastic neutron scattering measurements on silica xerogels in the 300–1000 K temperature range are presented and compared with those obtained in vitreous silica (heralux). The spectra show the presence of the Boson peak, at temperatures, where the quasi-elastic contribution due to absorbed water is negligible. The Boson peak in silica xerogels is at a frequency of around 5 meV (40 cm⁻¹) and has a shape similar to that of melted silica, even in the smaller density xerogels. This important result seems to indicate that the disorder introduced by the presence of pores does not affect the density of states in frequency region. This evidence is also confirmed by changes in the inelastic structure factor S(Q,ω), measured at the frequencies of the Boson peak as a function of the exchanged Q.