Solid state studies on substituted CuCr2O4 spinel

Changes in crystallographic, electrical, and thermal properties of CuCr₂O₄ spinel were investigated by replacing Cu with Mg, i.e., Cu_1?xMg_xCr₂O₄, and Cr with Al, i.e., CuCr_2?xAl_xO₄. The tetragonal distortion in CuCr₂O₄ disappeared with 60% replacement of Cu by Mg (x = 0.6) or 50% replacement of Cr by Al (x = 1.0). The temperature variation of electrical resistivity for all the tetragonal samples was similar to that of CuCr₂O₄. The first order, diffusionless phase transition was manifest in the hysteresis loops of log ? vs $\text{1}\text{T}$ plots. The resistivity and activation energy for conduction changed sharply near the phase transition composition. With the replacement of Cr by Al, the conduction in CuCr₂O₄ was found to change from p type to n type. The low thermal stability of the spinel was found to be due to a high concentration of tetrahedral Cu²⁺ ions (>80%) and compressed tetragonal distortion which strains the spinel lattice. This strain is removed by replacing either Cu with Mg or Cr with Al, whereby the spinel becomes stable.     

Electrical and optical properties of high-purity p-type single crystals of GeFe2O4

Single crystals of the spinel GeFe₂O₄, grown by the chemical vapor transport technique, are p-type semiconductors with an acceptor ionization energy of 0.39 eV. The material is a heavily compensated band-type semiconductor, with a typical hole concentration of 10¹⁴ cm^?3 near room temperature, and a temperature-independent Hall mobility of 2 cm²/V·sec. Optical absorption measurements show the optical band gap to be ?2.3 eV; the octahedral field splitting of the Fe²⁺d-levels is 10 200 cm^?1. Magnetic measurements show that n_eff is 5.26, from which a trigonal field splitting of 950 cm^?1 is derived.     

Sm2O3Ga2O3 and Gd2O3Ga2O3 phase diagrams

Four definite compounds exist in the Sm₂O₃Ga₂O₃ binary phase diagram, namely: Sm₃GaO₆, Sm₄Ga₂O₉, SmGaO₃, and Sm₃Ga₅O₁₂. The $\text{3}\text{1}$ compound is orthorhombic (space group Pnna - Z.4) with the cell parameters: a = 11.40₀Å, b = 5.51₅Å, c = 9.07Å and belongs to the oxysel family. Sm₃GaO₆ and SmGaO₃ melt incongruently at 1715 and 1565°C; Sm₄Ga₂O₉ and Sm₃Ga₅O₁₂ have a congruent melting point at 1710 and 1655°C. With regard to the Gd₂O₃Ga₂O₃ system three definite compounds have been identified: Gd₃GaO₆, Gd₄Ga₂O₉, and Gd₃Ga₅O₁₂. Only the garnet melts congruently at 1740°C with the following composition: Gd_3.12Ga_4.88O₁₂. Gd₃GaO₆, and Gd₄Ga₂O₉ melt incongruently at 1760 and 1700°C. GdGaO₃ is only obtained by melt overheating which may yield an equilibrium or a metastable phase diagram.     

Cristallisation de LiFe5O8 dans un verre 0,9 Li2B2O4 - 0,1 LiFe5O8

X-Ray diffraction, transmission electron microscopy, and magnetic measurements are used to study the crystallization of an amorphous compound: Li₂B₂O₄ (90 mole%)-LiFe₅O₈ (10 mole%). The crystalline phase which first appears in the amorphous matrix is LiFe₅O₈. The average particle size (50 to 300 Å) may be controlled by varying the temperature of annealing and/or the time of annealing. The crystallization kinetics are similar to those of metallic glasses. The fraction transformed, x, as a function of time, satisfies the Johnson-Mehl-Avrami equation with an exponent n of 0.75. The activation energy for the crystallization process is approximately 0.6 eV. Both these values characterize a primary crystallization.     

Electrical transport properties of a nonstoichiometric rare earth sulfide,EuGd2S4

The electrical transport properties of nonstoichiometric EuGd₂S₄ prepared by heating under a high vacuum have been investigated. The samples heated were classified into two groups on the basis of their electrical transport behavior. One group comprised semiconducting materials heated at 1500 and 1600°C, for which the transport mechanism was found to be via electron hopping with activation energies ranging from 0.013 to 0.027 eV. Another group comprised metallic materials heated at 1700 and 1800°C. Their electrical transport was carried out through ordinary band conduction over the measured temperature range except at temperatures lower than 120°K, where hopping with a very small activation energy (～0.0035 eV) occurred predominantly.     

Localized moments in the superconducting Li1+xTi2−xO4 spinel system

Electron spin resonance (ESR) and magnetic-susceptibility measurements on the Li_1+xTi_2?xO₄ spinel system ($\text{0 ≤ x ≤}\text{1}\text{3}$) indicate the presence of two types of localized moments in this material. In both cases, an unpaired electron is trapped as a Ti³⁺ ion in a crystal field that is predominantly octahedral, but with a strong tetragonal component. This type of crystal field cannot arise in the stoichiometric spinel. We propose two types of defect in the title spinel system: an oxygen vacancy and a hydroxyl ion. Unpaired electrons are trapped as Ti³⁺ ions adjacent to these defects, and it is argued that the strong tetragonal field is associated with the formation of a static (TiO)⁺ ion by a displacement of the titanium ion from the defect. Spin relaxation occurs via a thermal ionization of the trapped electron that appears to be associated with a static-dynamic transition in the titanium-ion displacement.     

Electronic properties of semiconducting Cd2GeO4

Cd₂GeO₄ has been prepared from CdO and GeO₂ by solid state reaction at 850°C as a low resistivity (? ? 1 Ω · cm) n-type semiconductor. Its conductivity is increased by doping with trivalent metal ions and decreased by heating oxygen. The electrons originate from shallow donors and their mobility is determined by a combination of large polaron formation and impurity scattering. From photoelectrolysis data the band gap is determined to be indirect, at 3.15 eV; the first direct transition occurs at 4.1 eV. The relations between conditions of preparation, defect structure, and carrier concentration have been examined, but the available data do not allow an unambiguous identification of the nature of the donor center.     

Preparation and comparison of the photoelectronic properties of Sr2Nb2O7 and Ba0.5Sr0.5Nb2O6

The two alkaline earth niobates Sr₂Nb₂O₇ and Ba_0.5Sr_0.5Nb₂O₆ have been prepared, their electronic properties measured, and their photoresponses compared. The indirect band gap in Sr₂Nb₂O₇ is 3.86 eV compared with 3.38 eV for Ba_0.5Sr_0.5Nb₂O₆. Hence, photoanodes composed of Sr₂Nb₂O₇ respond to much less of the “white” light spectrum than those made from Ba_0.5Sr_0.5Nb₂O₆. Nevertheless, their electrical outputs at an anode potential of 0.8 eV with respect to SCE in 0.2 M sodium acetate under “white” xenon arc irradiation of 1.25 W/cm² are comparable.     

The system NiAl2O4Ni2SiO4 at high pressures and temperatures: Spinelloids with spinel-related structures

Phase relations in the system NiAl₂O₄Ni₂SiO₄ were studied in the pressure range 1.5 ～ 13.0 GPa and in the temperature range 800 ～ 1450°C. Two new phases, IV and V, were found in regions of pressure higher than 4 GPa. Phase V disproportionates into a mixture of Ni₂SiO₄-spinel, NiO, and Al₂O₃ at approximately 9.5 GPa and 1100°C. Phases III, IV, and V form a solid solution in some compositional range: phases IV and V have a composition around NiAl₂O₄·Ni₂SiO₄, whereas phase III spreads from NiAl₂O₄·Ni₂SiO₄ to the NiAl₂O₄-rich side. All the phases I ～ V are structurally considered to be spinel derivatives, “spinelloids,” with three kinds of tetrahedral groups; isolated tetrahedra TO₄, linked ones T₂O₇, and triply linked ones T₃O₁₀. The ratios of isolated tetrahedra to linked ones are large in the higher-pressure phases and small in the lower-pressure phases. The difference of compositional range of phase III from that of phases IV and V is possibly explained by the avoidance of linked tetrahedra such as O₃AlOAlO₃.     

La3Os2O10, a new compound containing isolated clusters Os2O10 with metal-metal bonds

The formula of a new compound isolated in the LaOsO system has been established by means of crystal structure determination. There are two La₃Os₂O₁₀ units in a face-centered monoclinic unit cell (S.G. $\text{C2}\text{m}$); a = 7.911(2) Å, b = 7.963(2) Å, c = 6.966(2)Å, β = 115.76(2)°;. For 1082 intensities, collected on an automated single-crystal diffractometer, the final R value was 0.025 after absorption corrections. The structure consists of isolated Os₂O₁₀ clusters composed of two edge-shared OsO₆ octahedra. These dimeric units are connected together by two types of La³⁺ ions in eightfold coordination. In view of the OsOs distance inside the pair (2.462 Å), La₃Os₂O₁₀ provides an example of metal-metal bonding involving a transition metal in a half-integral formal oxidation state of 5.5.     

Preparation and photoelectronic properties of the system Cd2Ge1−xSixO4

Members of the system Cd₂Ge_1?xSi_xO₄ where 0 ≤ x ≤ 0.4 have been prepared. These compounds were observed to crystallize with the olivine structure, space group Pbnm. The resistivity, Hall mobility, flat-band potential, band gaps, and stability were determined as functions of composition. The variation of these photoelectronic properties can be attributed to the reduction of the cell parameters with increasing silicon substitution. The substitution of silicon for germanium reduces the loss of photocurrent from 25% after 1 hr for x = 0.0 to only 6% after 22 hr for x = 0.4.     

The hollandite-related structure of Ba2Ti9O20

The crystal structure of Ba₂Ti₉O₂₀ has been determined by comparison of experimental high-resolution electron micrographs with images simulated using structural models deduced from the micrographs in conjunction with crystallochemical principles. The structure consists of lamellae of hollandite-type structure alternating with BaTiO₃-like units, which effectively immobilize the Ba ions. This material should be relatively more leach resistant to attack by aqueous sodium chloride solutions. The structure determination clarifies the observation that this material has unique properties as a microwave resonator, compared with other barium and alkali titanate structures.     

A study of the Li1+xTi2−xO4 spinel system by diffuse-reflectance spectroscopy

The room-temperature diffuse-reflectance spectra of compositions within the Li_1+xTi_2?xO₄ spinel system ($\text{0 ≤ x ≤}\text{1}\text{3}$) show three absorption bands in the range 4000 to 48,000 cm^?1. Two high-energy absorption bands correspond to charge-transfer transitions from the oxygen-2p valence band to the titanium t_2g and σ1 conduction bands, where the σ1 band of e_g character has hybridized titanium-3d and titanium-4s parentage. The absorption band arising from promotion of electrons to the empty σ1 band does not alter with composition whereas the absorption band arising from promotion of electrons to the partially filled t_2g band narrows as the concentration of conduction electrons in the t_2g band decreases. These two high-energy absorption bands fall entirely within the ultraviolet spectral region, and the absorption edge in $\text{Li}{}_{\mathrm{<mtext>4</mtext><mtext>3</mtext>}}\text{Ti}{}_{\mathrm{<mtext>5</mtext><mtext>3</mtext>}}\text{O}{}_4\text{(x =}\text{1}\text{3}\text{)}$ occurs at 24,300 cm^?1 (3.02 eV). A low-energy absorption band is observed in compositions with $\text{x <}\text{1}\text{3}$ and in samples of $\text{Li}{}_{\mathrm{<mtext>4</mtext><mtext>3</mtext>}}\text{Ti}{}_{\mathrm{<mtext>5</mtext><mtext>3</mtext>}}\text{O}{}_4$ reduced in hydrogen at elevated temperatures. This band straddles the boundary between the visible and infrared spectral regions and shifts toward lower energy as the concentration of conduction electrons in the t_2g band decreases. The possible origins of the band are discussed; the argument is in favor of a d-d interband transition from states in the partially filled t_2g band to states in the empty σ1 band.     

Crystal structure of KSbP2O8

KSbP₂O₈ crystallizes in the rhombohedral system, space group $\text{R}\text{3}$, with a = 4.7623(4) Å, c = 25.409(4)Å, and Z = 3. The structure was determined from 487 reflexions collected on a NONIUS CAD4 automatic diffractometer with MoK^?α radiation. The final R index and weighted R_w index are 0.030 and 0.038, respectively. This structure is built up from layers of SbO₆ octahedra and PO₄ tetrahedra sharing corners. These (SbP₂O^?₈)_n layers are very similar to the (ZrP₂O^2?₈)_n layers in the well-known α-ZrP compound.     

An outline of the stucture of 7Bi2O3 · 2WO3 and its solid solutions

This paper gives an outline of the structure of a solid solution based on 7Bi₂O₃ · 2WO₃. The experimental results using X-ray diffraction methods (precession and powder) showed that 7Bi₂O₃ · 2WO₃ crystallizes in the space group $\text{I4}{}_1\text{a}$ with a = 12.5143(5)Å and c = 11.2248(6) Å. The number of formula weights per unit cell is 40, when the formula is considered to be of the oxygen-deficient fluorite-type Bi_0.875W_0.125O_1.6875. The compound has a substructure based on a defect fluorite-type pseudocubic subcell with $\text{a′ ? 5.6}$ Å. The axial relations between the supercell and subcell are $\text{a ? √a′}$ and $\text{c ? 2a′}$. The solid solution was formed over a limited range of WO₃ content between 21.3 mole% and 26.3 mole% at 700°C. The ordering of metal atoms is discussed and an ideal crystal structure is proposed.     

Ambient pressure synthesis,properties, and structure refinements of VP4 and CoP2

The previously reported compounds VP₄ and CoP₂, prepared at high pressure, were synthesized in well-crystallized form at ambient pressure by reaction of the elemental components in the presence of iodine. Their structures were refined from single-crystal X-ray diffractometer data to conventional residuals of R = 0.033 for VP₄ (CrP₄ type structure, 11 variables, 815 F values) and R = 0.019 for CoP₂ (arsenopyrite structure, 14 variables, 932 F values). VP₄ is paramagnetic and a metallic conductor. CoP₂ is a diamagnetic semiconductor with an activation energy of 0.34 eV. Chemical bonding and potential displacive phase transitions of these compounds are discussed.     

The system BaOGeO2 at high pressures and temperatures,with special reference to high-pressure transformations in BaGeO3, BaGe2O5, and Ba2Ge5O12

Phase relations in the system BaOGeO₂ were investigated in the pressure range 20–70 kbar in the temperature range 750–1200°C. Several new phases were identified in this system: an atmospheric phase of BaGe₂O₅ (monoclinic BaGe₂O₅ I), two high-pressure phases of BaGe₂O₅ (monoclinic BaGe₂O₅ II and tetragonal BaGe₂O₅ III), and a high-pressure phase of Ba₂Ge₅O₁₂. The phase boundary curve between BaGe₂O₅ II and BaGe₂O₅ III was preliminarily determined as P(kbar) = 7.7 + 0.047T (°C). The high-pressure phases of BaGeO₃, which were previously reported by Y. Shimizu, Y. Syono, and S. Akimoto (High Temp.-High Pressures2, 113 (1970)) in the pressure range 15–95 kbar, were interpreted to be not single-phase materials but complicated mixtures of more than two phases in the system BaOGeO₂. X-Ray powder diffraction data for the new compounds synthesized in this study are given.     

Infrared spectra of KNaSO4 and K3Na(SO4)2

The infrared spectra, transmittance and polarized reflectance, of KNaSO₄ and K₃Na(SO₄)₂ are reported. Group theoretical analysis was carried out and a vibrational assignment proposed on basis of C_3v and D_3d symmetries. Factor group and site effects are discussed.     

Quasi-two-dimensional electronic properties of the sodium molybdenum bronze,Na0.9Mo6O17

Four probe electrical resistivity measurements between 1.5 and 300 K were made on single crystals of the violet-red bronze Na_0.9Mo₆O₁₇ grown by a temperature gradient flux technique. The temperature variation of the resistivity shows metallic conductivity and highly anisotropic behavior similar to K_0.9Mo₆O₁₇ and Li_0.9Mo₆O₁₇. The room-temperature resistivity, measured in the direction parallel to the plate axis, is 3.0 × 10^?3 Ω cm and perpendicular to that axis it is 0.21 Ω cm. A transition observed at ～88 K is possibly related to the onset of a charge density wave. The temperature variation of the susceptibility show Pauli paramagnetic behavior at high temperature, and highly anomalous behavior in the vicinity of the transition at low temperatures.     

Survey of the phase formation in the Yb2O3Ga2O3MO and Yb2O3Cr2O3MO systems in air at high temperatures (M: Co,Ni, Cu,and Zn)

The phase relations in the Yb₂O₃Ga₂O₃CoO system at 1300 and 1200°C, the Yb₂O₃Ga₂O₃NiO system at 1300 and 1200°C, the Yb₂O₃Ga₂O₃CuO system at 1000°C and the Yb₂O₃Ga₂O₃ZnO system at 1350 and 1200°C, the Yb₂O₃Cr₂O₃CoO system at 1300 and 1200°C, the Yb₂O₃Cr₂O₃NiO system at 1300 and 1200°C, the Yb₂O₃Cr₂O₃CuO system at 1000°C, and the Yb₂O₃Cr₂O₃ZnO system at 1300 and 1200°C were determined in air by means of a classical quenching method. YbGaCoO₄ (a = 3.4165(1) and c = 25.081(2) Å), YbGaCuO₄ (a = 3.4601(4) and c = 24.172(6) Å), and YbGaZnO₄ (a = 3.4153(5) and c = 25.093(7) Å), which are isostructural with YbFe₂O₄ (space group: $\text{R}\text{3}\text{m, a = 3.455(1)}$ and c = 25.109(2) Å, were obtained as stable phases. In the Yb₂O₃Ga₂O₃NiO system and the Yb₂O₃Cr₂O₃MO system (M: Co, Ni, Cu, and Zn), no ternary stable phases existed.