Dual-wavelength laser operation at 1064 and 914 nm in two Nd:YVO<Subscript>4</Subscript> crystals

We present for the first time a dual-wavelength laser operation at 1064 and 914 nm in two NdYVO₄ crystals. A 879 nm laser diode is used to pump the first Nd:YVO₄ crystal emitting at 914 nm, and the second Nd:YVO₄ laser emitting at 1064 nm intracavity pumped at 914 nm. A total output power of 4.28 W at the two fundamental wavelengths was achieved at the absorbed pump power of 13.8 W. The M² values for 914 and 1064 nm lights at the maximum output power were found to be around 1.3 and 1.1, respectively.     

Temperature distribution and thermal-induced defects in photorefractive barium titanate crystals illuminated with intense cw or pulsed laser irradiations

The temperature distribution in a parallelepipedic crystal irradiated with a Gaussian repartition of light is calculated by solving the three-dimensional heat equation and taking into account the losses through the sides of the samples. The theoretical and experimental maps of temperature are satisfactorily compared. For barium titanate crystals, the resistance to intense cw laser (25.7 kW/mm² at 514.5 nm) and to Nd:YAG pulsed laser (peak power of 9.2 MW at 532 nm) is investigated. The defects induced by the irradiation are analysed. Under pulsed illumination, the damage threshold is found to be 0.54 GW/cm² in a nominally undoped BaTiO₃ and 0.44 GW/cm² in a rhodium-cobalt doped BaTiO₃ crystal. Received: 7 March 2000 / Revised version: 14 April 2000 / Published online: 16 August 2000     

5.3 W deep-blue light generation by intra-cavity frequency doubling of Nd:GdVO4

We report the efficient compacted deep-blue laser at 456 nm generation by intra-cavity frequency doubling of a continuous-wave (cw) laser operation of a diode-pumped Nd:GdVO₄ laser on the ⁴ F _3/2→⁴ I _9/2 transition at 912 nm. The different long LiB₃O₅ (LBO) crystals, cut for critical type I phase matching at room temperature, are used for second harmonic generation (shg) of the laser. At an incident pump power of 30 W, up to 5.3 W of cw output power at 456 nm is achieved with 15-mm-long LBO (3.8 W with 10 mm-long LBO). The conversion efficiency is 17.7% from pump diode input to second harmonic wave output.PACS 42.70.Hj; 42.55.Xi; 42.65.Ky     

Continuous wave and tunable laser operation of Yb3+ in disordered NaLa(MoO4)2

Continuous-wave Yb³⁺ laser operation is studied in single crystals of disordered NaLa(MoO₄)₂ at room temperature. The sample used was grown by the Czochralski technique and incorporates an Yb ion density of 3.1×10²⁰ cm^-3. The effect of the Yb concentration on some of the crystal properties is described as well as the spectroscopic Yb³⁺ properties at 5 K. Maximum slope efficiencies of about 40% for π and 38% for σ polarization were obtained under Ti:sapphire laser pumping near 976 nm, respectively. The maximum output power for the π polarization was 400 mW at 1039.5 nm, the threshold in this case amounted to 240 mW (absorbed pump power). The laser emission was tunable between 1016 and 1064 nm with a Lyot filter. Lasing was also realized by pumping with a fiber-coupled diode laser module. Maximum output power of 900 mW at 1035 nm was achieved in this case for the π polarization and the threshold was 280 mW. The results, in terms of output power and tunability, are superior in comparison to all previous reports on Yb-doped disordered double tungstate or molybdate crystals and represent a significant improvement in comparison to earlier experiments with low-doped Yb:NaLa(MoO₄)₂.PACS 42.55.Rz; 42.55.Xi; 42.70.Hj     

912 nm laser operation in diode-pumped grown-together composite Nd:GdVO4/GdVO4 crystal

Novel grown-together Nd:GdVO₄/GdVO₄ composite crystals were presented for the first time, which would be longitudinally pumped by 808 nm diode-laser to efficiently operate on continuous-wave (CW) 912 nm laser at room temperature. The maximum output power of 8.15 W at 912 nm laser was obtained successfully at the absorbed pump power of 28.0 W, giving the corresponding optical-to-optical conversion efficiency of 29.1% and the average slope-efficiency of 44.2%. Comparative experimental results show that the laser performance was influenced significantly by the Nd³⁺-doped concentration of the crystals, which would be optimized according to its energy-transfer upconversion (ETU) spectrum.     

Simultaneous dual-wavelength laser operation at 1342 and 946 nm in two laser crystals and their sum-frequency mixing

A sum-frequency yellow-green laser at 554.9 nm is reported by this paper, 946 nm wavelength is obtained from ⁴F_3/2-⁴I_9/2 transition in Nd:YAG and 1342 nm wavelength is obtained from ⁴F_3/2-⁴I_13/2 transition in Nd:YVO₄. Using a doubly folded-cavity type-II critical phase matching KTP crystal intra cavity to make 946 nm laser from Nd:YAG and 1342 nm laser from Nd:YVO₄ frequency summed, with incident pumped power of 30 W in Nd:YAG and 20 W in Nd:YVO₄, TEM₀₀ mode yellow-green laser at 554.9 nm at 1.15 W is obtained and its M² factor is less than 1.22. The experimental results show that the Nd:YAG and Nd:YVO₄ crystals intra-cavity sum-frequency mixing is an effective method for yellow-green laser and it can be applied to other two laser crystals to obtain more all-solid-state lasers with different wavelengths.     

CW and tunable laser operation of Yb<Superscript>3+</Superscript> doped CaF<Subscript>2</Subscript>

We present the spectroscopic properties and room temperature of a cw tunable laser operation with Yb³⁺ doped CaF₂ single crystals grown in our laboratory. A laser slope efficiency of 50% with respect to the absorbed 920 nm pump power was obtained, and the laser wavelength could be tuned between 1000 and 1060 nm. PACS 42.55R; 42.70An erratum to this article can be found at     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

Amplification of a <Emphasis Type="Italic">Q</Emphasis>-Switched Ho:GdVO<Subscript>4</Subscript> Oscillator in Thulium-Doped Large-Mode-Area Fiber

We report a high peak power, narrow linewidth, stable pulsed Ho:GdVO₄ amplifier based on thuliumdoped fiber, which produces 6.65 W average output power at 2,048 nm and 56.8 kW peak power with 11.7 ns pulse width at 10 kHz repetition rate. We use a simple Q-switched Ho:GdVO₄ laser as a seed laser and a thulium-doped fiber pumped by a 792 nm laser diode as an amplifier. The fiber amplifier provided 6.5 dB gain to the input signal. The spectral linewidth of the Ho:GdVO₄ amplifier remains < 0.5 nm with an M² beam quality of 1.36.     

Diode-pumped passively Q-switched 912 nm Nd:GdVO4 laser and pulsed deep-blue laser by intracavity frequency-doubling

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr⁴⁺:YAG laser and its efficient intracavity frequency-doubling to 456 nm deep-blue laser were demonstrated in this paper. Using a simple V-type laser cavity, pulsed 912 nm laser characteristics were investigated with two kinds of Cr⁴⁺:YAG crystal as the saturable absorbers, which have the different initial transmissivity (T_U) of 95% and 90% at 912 nm. When the T_U = 95% Cr⁴⁺:YAG was used, as much as an average output power of 2.8 W 912 nm laser was achieved at an absorbed pump power of 34.0 W, and the pulse width and the repetition rate were ∼ 40.5 ns and ∼ 76.6 kHz, respectively. To the best of our knowledge, this is the highest average output power of diode-pumped passively Q-switched Nd³⁺-doped quasi-three-level laser. Employing a BiBO as the frequency-doubling crystal, 456 nm pulsed deep-blue laser was obtained with a maximum average output power of 1.2 W at a repetition rate ∼ 42.7 kHz.     

Luminescence spectroscopy of Er-doped and Er, Yb-codoped LaPO4 single crystals

LaPO₄ single crystals lightly doped with Er³⁺, and codoped with Er³⁺ and Yb³⁺ have been grown by spontaneous nucleation in a lead phosphate flux. Absorption and luminescence spectra have been measured in the visible and near-IR regions and the excited state dynamics has been studied upon pulsed laser excitation. The obtained results have allowed the evaluation of the effective emission cross-sections around 1.5 μm, that have been found to be similar to important oxide laser crystals doped with Er³⁺. Efficient visible upconversion has been observed upon excitation at 980 nm in the codoped crystals. This behaviour is attributed to Yb³⁺-Er³⁺ energy transfer processes.     

Simultaneous dual-wavelength emission at 0.90 and 1.06 µm in Nd-doped laser crystals

Continuous-wave (CW) simultaneous laser emission on the 0.9-μm ⁴ F _3/2 → ⁴ I _9/2 transition and the ⁴ F _3/2 → ⁴ I _11/2 transition at 1.06 μm is obtained in Nd-based laser crystals of thin-disk geometry and using a multi-pass pumping scheme. A Nd:Y₃Al₅O₁₂ (Nd:YAG) thin disk emitted simultaneous laser radiation at 946 and 1064 nm with 5.1 W output power, and Nd:YVO₄ and Nd:GdVO₄ thin-disk lasers with more than 3 W output power at 0.91 and 1.06 μm were realized. The ratio between the output power at one of the wavelengths and the total output power could be varied by the laser resonator design. An intracavity frequency-doubled Nd:YVO₄ thin-disk laser with alternate green at 532 nm and “deep-blue” at 457 nm generation of high average output powers is demonstrated.     

Continuous-wave Nd:YVO4/KTiOPO4 green laser at 542 nm under diode pumping into the emitting level

We report a green laser at 542 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1086 nm Nd:YVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A KTiOPO₄ (KTP) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 14.5 W, as high as 1.33 W of CW output power at 542 nm is achieved. The optical-to-optical conversion efficiency is up to 9.2%, and the fluctuation of the green output power was better than 3.8% in the given 30 min.     

Efficient pulse operation of Nd:GdVO4 laser with AO Q-switch

We realized an efficient laser diode-pumped Nd:GdVO₄ laser with crystals grown by the floating zone method. In the lasing experiment, a slope efficiency of 78% was achieved with a 1 at.% Nd-doped crystal by pumping at 879 nm. Furthermore, excellent pulsed laser operation was demonstrated with the Nd:GdVO₄ crystal by using an acousto-optical (AO) Q-switch. A pulse width of 7 ns was observed when the pulse-repetition frequency was 40 kHz. It is the shortest pulse width recorded in the case of the AO Q-switched Nd:GdVO₄ laser.     

Tunable single-mode pulsed Ti3+:Sapphire laser injection-seeded by a continuous-wave Cr3+:LiSrAlF6 laser

Spectrally pure high-power tunable single-mode operation of a pulsed Ti³⁺:sapphire laser by a tunable injection-seeding is reported. The injection laser was a cw diode laser pumped, spectrally narrowed tunable Cr³⁺:LiSrAlF₆ (Cr³⁺:LiSAF) laser with a grating in the auxiliary cavity. Single-mode tunable operation of a pulsed Ti³⁺: sapphire ring oscillator was obtained at different wavelengths in the range between 818 nm and 848 nm with a typical linewidth of 0.006 cm^-1. To extend the applicability of this operation to a differential absorption lidar system, the single-mode Ti³⁺:sapphire oscillator output was amplified and a high energy output of 38 mJ was obtained with the same linewidth.     

All-solid-state dual end pumped YVO4:Nd/LBO blue laser with 21.8 W output power at 457 nm

It is reported the efficient compact deep-blue laser at 457 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode-pumped YVO₄:Nd laser on the ⁴ F _3/2 → ⁴ I _9/2 transition at 914 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation (SHG) of the laser. With dual end pump configurations at total incident pump power of 60 W, as high as 21.8 W of CW output power at 457 nm is achieved with 20-mm-long LBO. The optical-to-optical conversion efficiency is up to 36.3%, and the power stability in 8 h is better than 2.36%.     

Efficient Nd:Y0.5Gd0.5VO4-KTiOPO4 green laser under diode pumping into the emitting level 4F3/2

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1064 nm Nd:Y_0.5Gd_0.5VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. A KTiOPO₄ (KTP) crystal, cut for critical type-II phase matching at room temperature is used for second harmonic generation (SHG) of the laser. At an incident pump power of 17.8 W, as high as 4.21 W of cw output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 23.6%, and the fluctuation of the green output power was better than 2.8% in the given 30 min.     

Continuous-wave Nd:GdVO<Subscript>4</Subscript>/LBO laser at 541.5 nm under diode pumping into the emitting level

We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.     

Highly efficient intracavity frequency-doubled Nd:GdVO4-LBO red laser at 670 nm under direct 880 nm pumping

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 5.1 W of continuous wave output power at 670 nm is achieved with 15-mm-long LBO. The optical-to-optical conversion efficiency is up to 0.31, and the fluctuation of the red output power was better than 3.0% in the given 30 min. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

All solid-state continuous-wave intracavity frequency-doubled Nd:LuVO<Subscript>4</Subscript>-LBO red laser at 671.5 nm

We report for the first time a efficient compact red laser at 671.5 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:LuVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1343 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 4.3 W of continuous wave output power at 671.5 nm is achieved with 10-mm-long LBO. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.