Peculiarities of the initial stage of growth of niobium-based nanostructures on a Si(111)-7 × 7 surface

The initial stage of growth of nanoislands prepared by thermal deposition of niobium on the reconstructed surface of Si(111)-7 × 7 in ultrahigh vacuum is experimentally investigated. The morphological and electrophysical properties of niobium-based nanostructures are studied by means of low-temperature scanning tunneling microscopy and spectroscopy. It is found that upon the deposition of niobium on a substrate at room temperature, clusters and nanoislands are formed on the silicon surface, having a characteristic lateral size of 10 nm with the metallic type of tunneling conductivity at low temperatures. Upon the deposition of niobium on a heated substrate, quasi-one-dimensional (1D) and quasi-two-dimensional (2D) structures with typical lateral dimensions of up to 200 nm and three-dimensional pyramidal islands with semiconducting type of tunneling conductivity at low temperatures are formed.     

硅表面硅镱键合与量子级联结构的发光

用纳秒强激光脉冲制备了纳米硅和硅表面的硅镱键合结构,检测了纳米硅表面硅镱键合的发光特性,并对这种结构相应的光致发光(PL)和电致发光(EL)的动力学机理进行了研究。观察到纳米硅表面硅镱键合在700nm附近尖锐的强发光峰,结合第一性原理计算认为是硅镱键合在弯曲纳米硅表面的局域态发光;利用纳秒脉冲激光沉积技术(PLD)制备多晶硅薄膜,发现由硅镱界面的失配形成表面的突触,其上的硅镱键合产生带隙中的电子局域态,该局域态发光分布在1250~1650nm波长范围,有增强的EL发光;用PLD方法制备硅镱多层膜量子级联结构,测量到光通信窗口的多个发光峰,并观察到随膜层数增加且发光峰增多。     

Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals

This article presents the study of the electrochemical deposition of zinc oxide from the non-aqueous solution based on dimethyl sulfoxide and zinc chloride into the porous silicon matrix. The features of the deposition process depending on the thickness of the porous silicon layer are presented. It is shown that after deposition process the porous silicon matrix is filled with zinc oxide nanocrystals with a diameter of 10–50 nm. The electrochemically deposited zinc oxide layers on top of porous silicon are shown to have a crystalline structure. It is also shown that zinc oxide crystals formed by hydrothermal method on the surface of electrochemically deposited zinc oxide film demonstrate ultra-violet luminescence. The effect of the porous silicon layer thickness on the morphology of the zinc oxide is shown. The structures obtained demonstrated two luminescence bands peaking at the 375 and 600 nm wavelengths. Possible applications of ZnO nanostructures, porous and continuous polycrystalline ZnO films such as gas sensors, light-emitting diodes, photovoltaic devices, and nanopiezo energy generators are considered. Aspects of integration with conventional silicon technology are also discussed.     

Fabrication of complex nanostructures on ZnO crystals by the interference of three femtosecond laser beams

By adjusting the laser polarization combinations, fluences and pulse numbers, we fabricated several types of two-dimensional (2D) complex nanostructures on the surface of c-cut ZnO single crystal by the interference of three femtosecond laser beams with central wavelength of 800 nm, pulse duration of 50 fs and pulse repetition frequency of 1 kHz. The hexagonal 2D nanostructures with a period of 600 nm are very regular and uniform, in which nanoparticles, nanorings and nanoripples with sizes of 200 nm are embedded. Excited by 800 nm femtosecond laser pulses, the photoluminescence (PL) micrographs reveal that the 2D nanostructures can emit purer and brighter blue light compared with the plane surface. These nanostructures have potential applications in blue light-emitting diodes (LEDs), high density optical storage and other optoelectronic devices.     

Three-Dimensional Self-Shaping Nanostructures Based on Free Stressed Heterofilms

The present review examines the formation of three-dimensional nanostructures (nanoshells, nanotubes, nanospirals, nanorings, etc.) from single-crystal heterostructures based on III–V Si/GeSi semiconductors as well as metal and hybrid heterostructures. New results on the formation of various nanostructures with a minimum curvature radius of the order of 1 nm are presented.     

Two-layer light emitting diodes prepared by the sol–gel route

We have elaborated organic–inorganic hybrid light-emitting diodes (HLED). These devices emitting in the green are formed of two hybrid thin layers, exhibiting different functionalities, which are sandwiched between indium–tin oxide (ITO) and metallic electrodes. These layers have been prepared from silane precursors modified with hole transporting units and light-emitting naphthalimide moieties by the sol–gel technique. The hole transporting sol–gel layers exhibit about the same charge mobility as organic polymers having equivalent active units. The maximum external quantum efficiency of the best diode using LiF/Al cathode is about 1% and the luminance reaches 4000 cd · m ⁻² .     

基于超薄发光层及双极性混合间隔层的白光有机发光器件研究

本文采用非掺杂超薄发光层及双极性混合间隔层结构,获得了高效、光谱稳定的白光有机发光器件.基于单载流子器件及单色蓝光有机发光器件的研究,确定了双极性混合间隔层的最佳比例;通过瞬态光致发光寿命研究,验证了不同发光材料之间的能量传递过程;得到的三波段和四波段白光有机发光器件的最高效率分别为52 cd/A (53.5 lm/W)和13.8 cd/A (13.6 lm/W),最高外量子效率分别为17.1%和11.2%.由于发光层不同颜色之间依次的能量传递结构,三波段白光有机发光器件的亮度从465到15950 cd/m~2时,色度坐标的变化?CIE仅为(0.005, 0.001);四波段白光有机发光器件的亮度从5077到14390 cd/m~2时,色度坐标的变化?CIE为(0.023, 0.012).     

利用氧等离子体处理阳极银实现高效率顶发射有机电致发光

主要报道在器件结构为玻璃衬底/Ag(阳极)/NPB(空穴传输层)/Alq3(电子传输及发光层)/Sm(半透明阴极)/Alq3的顶发射有机电致发光器件中,利用氧等离子体对阳极银的表面进行处理来降低阳极和空穴传输层(Ag/NPB)界面处的空穴注入势垒,提高顶发射有机电致发光器件的性能。主要研究了氧等离子体处理时间对阳极银和顶发射有机电致发光器件光电特性的影响。紫外光电子能谱表明,氧等离子体处理能有效降低Ag/NPB界面处的空穴注入势垒。通过优化处理时间获得最佳器件性能,优化后的器件最大效率可达6.14cd/A。     

Synthesis and properties of ZnO hexagonal prisms synthesized on MgO-coated Si (111) substrates

ZnO hexagonal prisms have grown on MgO-coated Si (111) substrates by chemical vapor deposition. The process has two steps : the preparation of MgO-coated Si (111) substrates and the preparation of uniform ZnO hexagonal prisms. Some nucleation sites are provided on the Si substrates by the MgO layers, which have the capability to improve the growth of ZnO prisms in the heteroepitaxy. The prisms are single crystals with a preferential growth along the c axis and they are well-faceted at both the end and side surfaces. Room-temperature photoluminescence measurement of these ZnO prisms have shown a strong ultraviolet (UV) emission band centered at 393 nm and a weak green emission band centered at 507 nm, which may be provide an improvement in novel ultraviolet light-emitting devices. In addition, a possible mechanism for the prism growth is proposed based on the analysis by electron microscopy.     

有机层厚度变化的有机电致发光器件与微腔器件光谱分析

设计中心波长为520nm,改变有机层厚度,即空穴传输层NPB和发光层Alq3的厚度,分别由10nm逐渐增加至100nm,器件的总体厚度也随着改变,分别计算模拟出有机电致发光器件(OLED)和微腔有机电致发光器件(MOLED)的电致发光谱(EL),并对光谱的积分强度、峰值强度、半峰全宽、峰值位置的三维分布图进行比较分析。综合考虑光谱的峰值位置(中心波长)、最大的峰值强度和积分强度(与亮度、效率相关)、最小半峰全宽(色纯度高)进行合理的设计,可以找到最佳厚度。发现:NPB和Alq3的厚度分别为70和62nm时,器件性能最佳,并且微腔器件的结果尤为明显。结果表明,通过模拟计算,可以深入探索MOLED和OLED发光特性,设计出合理的器件结构。     

Facile synthesis and optical properties of Co3O4 nanostructures by the microwave route

Cobalt oxide (Co₃O₄) nanoplatelet shape like nanostructures have been successfully synthesized through a simple microwave route for the first time using cobalt acetate, NaOH and citric acid at 200 °C for 30 min. The structure and morphology of as-prepared Co₃O₄ nanoplatelets are characterized by means of powder X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), and scanning electron microscope (SEM). XRD measurements indicate that the product has a perfect crystalline cubic phase of Co₃O₄ with a lattice constant a=8.082 Å. The SEM images show that the obtained Co₃O₄ nanopowder consists of nanoplatelets with diameter 125 nm and thickness 20 nm. Energy-dispersive X-ray spectroscopy (EDS) show that the composition of Co₃O₄ is stoichiometric. Room temperature photoluminescence measurement is exhibited by a strong UV emission and a suppressed green emission, confirming the good optical properties for the as-prepared Co₃O₄ nanoplatelets.     

Aqueous chemical growth of free standing vertical ZnO nanoprisms,nanorods and nanodiskettes with improved texture co-efficient and tunable size uniformity

Tuning the morphology, size and aspect ratio of free standing ZnO nanostructured arrays by a simple hydrothermal method is reported. Pre-coated ZnO seed layers of two different thicknesses (≈350 nm or 550 nm) were used as substrates to grow ZnO nanostructures for the study. Various parameters such as chemical ambience, pH of the solution, strength of the Zn²⁺ atoms and thickness of seed bed are varied to analyze their effects on the resultant ZnO nanostructures. Vertically oriented hexagonal nanorods, multi-angular nanorods, hexagonal diskette and popcorn-like nanostructures are obtained by altering the experimental parameters. All the produced nanostructures were analysed by X-ray powder diffraction analysis and found to be grown in the (002) orientation of wurtzite ZnO. The texture co-efficient of ZnO layer was improved by combining a thick seed layer with higher cationic strength. Surface morphological studies reveal various nanostructures such as nanorods, diskettes and popcorn-like structures based on various preparation conditions. The optical property of the closest packed nanorods array was recorded by UV-VIS spectrometry, and the band gap value simulated from the results reflect the near characteristic band gap of ZnO. The surface roughness profile taken from the Atomic Force Microscopy reveals a roughness of less than 320 nm.     

Three Dimensional Branched Gold Nanostructures on Reduced Graphene Oxide Films Formed at a Liquid/Liquid Interface

Interfacing anisotropic gold nanostructures with graphene can open up new avenues for modifying the light–matter interaction of graphene. A chemical route is explored to synthesize branched gold nanostructures on reduced graphene oxide (rGO) layers by in situ reduction, assisted by binary surfactant mixtures containing tetraoctylammonium bromide with cetyltrimethy­lammonium bromide, sodium dodecylsulfate, or sodium citrate. The hybrid material self‐assembles at a liquid/liquid interface forming a free‐standing film. Electron microscopy studies reveal the morphology, microstructure, and crystallinity of the hybrids. The gold nanostructures are branched in three dimensions and possess various shapes, such as irregular stars, multipods, and spiky features, interspersed with rGO layers. The hybrids exhibit plasmon modes in the visible and near‐infrared region due to the shape anisotropy. The enhancement effect of the spiky features is also observed in the Raman spectra. The growth mechanism of the branched nanostructures is followed by kinetic studies and indicates that the formation of multiple twinned crystals is the key factor for branching.     

Gold nanostructures on chemically reinforced PDMS microwell arrays

This paper describes a facile strategy for fabricating arrays of two- and three-dimensional gold nanostructures using PDMS-infiltrated polystyrene (PS) colloidal crystals. PDMS molding of colloidal crystal, gold vapor deposition, and subsequent calcination of PS produced gold thin layers over hexagonal PDMS microwell arrays with hemispherical air-voids of approximately 140 nm on glass substrates. Vapor deposition of perfluoroalkylsilane thin layers improved the thermal stability of the colloidal template over 100 °C, providing a route to preparation of hollow architectures with gold thin layers supported by PDMS nanostructures. Surface modification of the PDMS using poly(allylamine hydrochloride) induced two-dimensional colloidal crystals of PS and PMMA spheres through electrostatic interactions. Particle aggregation of 13 nm gold nanoparticles in the PDMS microwells demonstrated a surface plasmon resonance band red-shifted to 810 nm, in comparison with that on the flat surface at 720 nm.     

Si-based materials and devices for light emission in silicon

We report on the fabrication and performances of extremely efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1.54 μm electroluminescence (EL) at 300 K with a 10% external quantum efficiency, comparable to that of standard light-emitting diodes using III–V semiconductors. Er excitation is caused by hot electrons impact and oxide wearout limits the reliability of the devices. Much more stable light-emitting MOS devices have been fabricated using Er-doped silicon rich oxide (SRO) films as gate dielectric. These devices show a high stability, with an external quantum efficiency reduced to 1%. In these devices, Er pumping occurs by energy transfer from the Si nanostructures to the rare-earth ions. Finally, we have also fabricated MOS structures with Tb- and Yb-doped SiO₂ which show room temperature EL at 540 nm (Tb) and 980 nm (Yb) with an external quantum efficiency of a 10% and 0.1%, respectively.     

Numerical Simulation on Thermal-Electrical Characteristics and Electrode Patterns of GaN LEDs with Graphene/NiO_x Hybrid Electrode

The thermal-electrical characteristic of a GaN light-emitting diode(LED) with the hybrid transparent conductive layers(TCLs) of graphene(Gr) and NiO_x is investigated by a finite element method.It is indicated that the LED with the compound TCL of 3-layer Gr and 1 nm NiO_x has the best thermal-electrical performance from the view point of the maximum temperature and the current density deviation of multiple quantum wells,and the maximum temperature occurs near the n-electrode rather than p-electrode.Furthermore,to depress the current crowding on the LED,the electrode pattern parameters including p- and n-electrode length,p-electrode buried depth and the distance of n-electrode to active area are optimized.It is found that either increasing p- or n-electrode length and buried depth or decreasing the distance of n-electrode from the active area will decrease the temperature of the LED,while the increase of the n-electrode length has more prominent effect.Typically,when the n-electrode length increases to 0.8 times of the chip size,the temperature of the GaN LED with the1 nm NiO_x/3-layer-Gr hybrid TCLs could drop about 7K and the current density uniformity could increase by23.8%,compared to 0.4 times of the chip size.This new finding will be beneficial for improvement of the thermalelectrical performance of LEDs with various conductive TCLs such as NiO_x/Gr or ITO/Gr as current spreading layers.     

Photoluminescence characterization of silicon nanostructures embedded in silicon oxide

This paper describes a simple method to analyze the photoluminescent characteristics of materials based on embedded light-emitting nanoclusters. Photoluminescence spectra of deposited silicon sub-oxide layers with the same composition and different thicknesses have been obtained. A saturation of the total luminescence intensity is observed with increase in thickness. By analyzing the photoluminescence spectra several optical and structural parameters can be evaluated. We thus propose a model in which the absorption of light from a nanostructure layer implies the possibility of subsequent luminescence and affects the underlying layers as well. By fitting the data to the developed model, two fundamental parameters are extracted: nanostructures absorption probability, which is independent of the emission energy and the spectra of emission probability of an excited nanostructure which fits a Gaussian shape.     

Effects of different buffer layers on the electro-luminescence performances in white organic light-emitting diodes

The effects of different hole injection materials as the buffer layer on the electro-luminescence (EL) performances of white organic light-emitting diodes (WOLEDs) are investigated in detail. It is found that the EL performances and electric properties were strongly dependent on the structure of the used hole injection materials with different thicknesses, which directly affected the injection and transport properties in devices, and thus the EL efficiency and lifetime. It can be seen that a hybrid buffer layer of 5 nm aluminum fluoride (AlF₃)/15 nm 4,4′,4″-tris(3-methylphenylphenylamino) (m-MTDATA) as the hole injection buffer layer shows the best EL performances in efficiency and lifetime, showing a promising hole injection material in WOLEDs. The mechanisms behind the enhanced performance of the hybrid buffer layer in WOLEDs are discussed based on X-ray photoelectron spectroscopy (XPS) measurement.     

中间层对白色全磷光有机电致发光器件性能的影响

制备了基于蓝色磷光材料bis[3,5-difluoro-2-（2-pridyl）phenyl-（2-earboxypyribyl）iridumⅢ]（FIrpic）、红色磷光材料bis（2-methyldibenzo [f,h]quinoxaline）（acetylacetonate）iridium（Ⅲ）（Ir（MDQ）₂acac）的双波段白光有机电致发光器件。蓝色磷光材料FIrpic被掺杂在一种宽带隙的主体材料1,3-bis（triphenylsilyl）benzene（UGH3）之中,红色磷光材料Ir（MDQ）₂acac被掺杂在主体材料4,4',4"-tris（carbazol-9-yl）triphenylamine（TCTA）之中,并在两发光层之间加入一种宽带隙的空穴传输材料1,3-bis（carbazol-9-yl）benzene（mCP）作为中间层。制备的器件结构为ITO/NPB（40 nm）/TCTA：Ir（MDQ）₂acac 7%（10 nm）/mCP（x nm）/UGH3：Firpic 8%（30 nm）/BPhen（30 nm）/LIF（0.8 nm）/AL（200 nm）。实验结果表明,中间层的加入促进了发光层中电子和空穴的平衡并抑制了发光层之间的能量转移。加入适当厚度的中间层之后,器件的性能得到了明显的提升,相比于无中间层器件,最高电流效率由3.4 cd/A提高到13.2 cd/A。     

Red and Near-Infrared Electroluminescences from Metal-Free Phthalocyanine

Organic light emitting diodes are fabricated based on metal-free phthalocyanine (H₂Pc) doped into tris-(8-hydroxyquinoline) aluminium (Alq₃). The device structure is ITO/NPB (30nm)/Alq₃: H₂Pc(30nm)/BCP(20nm)/Alq₃(20 nm)/Al. In the light-emitting layers, H₂Pc concentrations are varied from 0wt% to 100wt%. The emissions around 708nm and 800nm appear at low concentrations, while the emissions around 910nm and 930nm appear at high concentrations. The emissions around 708nm and 800nm are from H₂Pc monomers. The emissions around 910nm and 930nm are from H₂Pc aggregates. The dominant mechanism in the doped devices is direct chargetrapping.