Dual mode emission and harmonic generation in ZnO-CaO-Al2O3: Er nano-composite

Er³⁺ doped ZnO-CaO-Al₂O₃ nano-composite phosphor has been synthesized through combustion method and its emission and harmonic generation properties have been studied. The X-ray diffraction and thermal analysis techniques have been used to prove the dual phase (ZnO and CaO-Al₂O₃) nature of the phosphor. The phosphor has shown up-conversion emission on near-infra-red (976 nm) excitation and down-conversion emission on 355 nm excitation in presence of Er³⁺ and thus behaves as a dual mode phosphor. On excitation with 976 nm diode laser, material shows color tunability (calcination of composite material at different temperatures). Formation of ZnO nanocrystals on heat treatment of as-synthesized sample has shown its characteristic emission at 388 nm and also the energy transfer from ZnO to Er³⁺ ions. The low temperature emission measurements have been carried out and the results have been discussed. Phosphor has shown strong second harmonic generation (SHG) at 532 nm on 1064 nm and at 266 nm on 532 nm excitation.     

Local crystallization in an oxyfluoride glass doped with Er3+ ions using a continuous argon laser

Local crystalline formation in erbium doped oxyfluoride glass has been obtained under a cw Argon laser irradiation up to 1.8 W pumping power. By exciting at 514 nm, the emission from 800 nm and 850 nm corresponding to the ⁴S_3/2(²H_11/2)→⁴I_13/2 electronic transitions have been analyzed both inside and outside the irradiated area. The changes in the emission spectra indicate that the high power Ar laser irradiation has resulted in a localized desvitrification process. The temperature dependence of the fluorescence intensity ratio of the 800 nm and 850 nm emission bands has been used to determine the temperature of the irradiated zone. Moreover, the average lifetime of the ⁴S_3/2(²H_11/2) thermalized levels have been measured as a function of the excitation spot position. An important decrease is observed at the irradiated area. These results confirm that a localized cristalline phase has been created by the laser action.     

Broad-band regenerative laser amplification in ytterbium-doped calcium fluoride (Yb:CaF<Subscript>2</Subscript>)

An output pulse energy of 17.3 mJ has been achieved with a diode-pumped Yb:CaF₂ regenerative laser amplifier. The bandwidth of the output pulse spectrum was 7.3 nm, being seeded with femtosecond pulses stretched to 2.2 ns. In cw operation a tuning range of 80 nm has been observed. A maximum pulse energy of 44 mJ at a repetition rate of 1 Hz has been obtained in Q-switched mode. The laser damage threshold of a Yb:CaF₂ crystal has been determined at a wavelength of 1064 nm and a pulse duration of 10 ns. PACS 42.55.Ah; 42.55.Xi; 42.70.Hj     

Diode-pumped Nd:YVO4 laser emitting at 1074 nm based on the 4F3/2-4I11/2 transition

We report a diode-pumped Nd:YVO₄ laser emitting at 1074 nm, based on the ⁴ F _3/2-⁴ I _11/2 transition, generally used for a 1064 nm emission. A power of 323 mW at 1074 nm has been achieved in continuouswave (CW) operation with a fiber-coupled laser diode emitting 18.2 W at 808 nm. Intracavity second-harmonic generation in CW mode has also been demonstrated with a power of 18 mW at 537 nm by using a LiB₃O₅ (LBO) nonlinear crystal.     

First diode-pumped Yb-doped solid-state laser continuously tunable between 1000 and 1010 nm

We demonstrate that the ytterbium-doped medium Yb:YSO can provide laser oscillation in the 1000–1010 nm wavelength range under diode pumping around 980 nm. Ytterbium-doped Y₂SiO₅ crystal has been chosen for its high emission cross section around 1 m combined with a strong absorption line at 978 nm. We have developed an original pumping architecture that permits us to overcome problems due to the small difference between pump and laser wavelengths. In this way, laser emission continuously tunable in the 1000–1010 nm wavelength range has been obtained with more than 100 mW of output power. This kind of laser is the first step toward a metrological source around 500 nm stabilized on an I₂ absorption line. Furthermore, 100 mW of laser light has been obtained at 998.5 nm, leading to a remarkably low quantum defect of 2.1%. PACS 42.55.Xi; 42.60.Pk; 42.72.Ai     

Efficient and compact intracavity-frequency-doubled Nd:LuVO<Subscript>4</Subscript>/LBO laser at 538 nm end-pumped by a fiber-coupled laser diode

We report a diode-pumped Nd:LuVO₄ laser emitting at 1076 nm, based on the ⁴ F _3/2−⁴ I _11/2 transition, generally used for a 1066 nm emission. A power of 689 mW at 1076 nm has been achieved in continuous-wave (CW) operation with a fiber-coupled laser diode emitting 17.8 W at 809 nm. Intracavity second-harmonic generation (SHG) in CW mode has also been demonstrated with a power of 105 mW at 538 nm by using a LiB₃O₅ (LBO) nonlinear crystal.     

Time dependence of the luminescence intensity in CdI2-Cd and CdI2-Ag crystals

The decrease in the luminescence intensity (luminescence ??fatigue??) of long-wavelength emission bands with time in CdI₂-Cd (??_max = 700 nm) and CdI₂-Ag (??_max = 680 nm) crystals upon exposure to light in the fundamental absorption region has been studied. The process parameters, i.e., the capture cross section ?? and the fraction ?? of centers disappeared during interband irradiation, have been determined. The model of electronic processes has been proposed, within which experimental data have been consistently explained.     

Low cost wavelength filter of SiGe photodetector with a-Si:H capped layer

The strained Si_0.8Ge_0.2 film has been prepared onto Si substrate by using an ultrahigh-vacuum chemical vapor deposition system. A low cost wavelength filter of photodetector has been demonstrated for the first time. This filter was simply carried out by just inserting a 60 nm thick a-Si:H capped layer onto Si_0.8Ge_0.2 thin film. The room-temperature photoluminescence shows that the sample with Si_0.8Ge_0.2 layer has a tendency to shift wavelength into longer regime than that of Si substrate. The full width at half maximum (FWHM) was 185 nm for Si_0.8Ge_0.2 photodetector without a-Si:H capped. By inserting a 60 nm thick a-Si:H capped layer, the FWHM was narrowed into 97 nm. This demonstrates that the a-Si:H capped layer has an ability acted as wavelength filter in our study.     

Attaining the wavelength range 189–197 nm by frequency mixing inβ-BaB2O4

Wavelengths in the range from 188.9 to 197 nm have been obtained by type-I sum frequency generation (SFG) in -BaB₂O₄. The fundamental beams were supplied by pulsed dye lasers one of which tuned between 780 and 950 nm and the other frequency-doubled at 497 nm. The possibility of shifting the excimer wavelength 248.5 nm to the excimer wavelength 193 nm has been demonstrated, replacing the frequency-doubled dye laser by KrF excimer lasers of different beam properties.     

Effect of annealing in an external magnetic field on the microstructure and magnetic properties of the Fe/FePt/Pt multilayer system

The effect of annealing in an external magnetic field applied perpendicular to the plane of the film on the kinetics of Ll ₀ phase transformation of the microstructure and the magnetic properties of the Fe(2 nm)/FePt(20 nm)/Pt(2 nm) multilayer system has been investigated. The relations between the hysteresis loop shape, magnetic correlation length, and structural disorders, which are characteristic of magnetic information carriers, have been analyzed. It has been found that the annealing of the Fe(2 nm)/FePt(20 nm)/Pt(2 nm) multilayer system at a temperature of 470°C in an external magnetic field of 3500 Oe, which is applied perpendicular to the film plane, leads to the formation of a face-centered tetragonal structure of the Ll ₀ phase in the FePt film, which is characterized by the high coercivity H _c , the (001) preferred texture, the magnetic anisotropy perpendicular to the film plane, small sizes of FePt grains in the film, and weak exchange coupling between the particles. The energy of the external magnetic field encourages the process of transformation of the FePt film into the Ll ₀ phase. Thus, a method has been developed for fabricating multilayer films based on the FePt Ll ₀ phase with the parameters necessary for information carrier materials with perpendicular-type magnetic recording.     

Efficient blue emission of ytterbium-doped Sr<Subscript>5</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>F under quasi-three-level intracavity pumping

We report an Yb:Sr₅(PO₄)₃F (Yb:S-FAP) laser emitting at 985 nm intracavity pumped by a 912 nm diode-pumped Nd:GdVO₄ laser. A 808 nm diode laser is used to pump the Nd:GdVO₄ crystal emitting at 912 nm, and the Yb:S-FAP laser emitting at 985 nm intracavity pumped at 912 nm. With incident pump power of 17.5 W, intracavity second harmonic generation has been demonstrated with a power of 131 mW at 492.5 nm by using a LBO nonlinear crystal.     

Crystal structure of low-temperature rubidium monoaluminate modification

Rubidium monoaluminate RbAlO₂ has been studied by powder neutron diffraction and differential scanning calorimetry. A structural phase transition has been found at 1050°C. It is shown that the low-temperature modification RbAlO2 has the orthorhombic structure (Pnma, a = 0.5570(2) nm, b = 1.1189(4) nm, c = 1.5818(6) nm) close to the crystal structures of low-temperature modifications RbGaO₂ and RbFeO₂, not a face-centered cubic structure, as assumed previously.     

Triplet state and phenoxyl radical formation of 3, 4‐methylenedioxy phenol: a combined laser flash photolysis and pulse radiolysis study

Formations of triplet state, molecular cation radical, and phenoxyl radical of 3,4‐methylenedioxy phenol (sesamol, SOH) in organic solvents have been investigated by laser photolysis as well as pulse radiolysis techniques. Photolysis of SOH in cyclohexane has been found to produce both triplet state (λ_max ～ 480 nm) and phenoxyl radical (425–430 nm) of SOH by mono‐photonic processes. However, radical cation (λ_max = 450 nm) and phenoxyl radical of SOH have been observed on radiolysis in cyclohexane. Further, radiolysis of SOH in benzene has been found to produce phenoxyl radical only. Mechanism of phenoxyl radical formation by photo‐excitation of SOH has been studied and triplet energy level of SOH is estimated to lie between 1.85 and 2.64 eV. Copyright © 2007 John Wiley & Sons, Ltd.     

Near infrared and visible tunability from a diode pumped Nd3+ activated strontium barium niobate laser crystal

Tunable laser action from a diode pumped Nd³⁺ activated Sr_xBa_1-x(NbO₃)₂ crystal has been obtained. A wide continuous tuning range of 43 nm in the near infrared region (1050–1093 nm) has been demonstrated due to the broad ⁴F_3/2→⁴I_11/2 emission band present in this system. Simultaneously, 20 nm of tunability in the green region (525–545 nm), as well as 7 nm in the blue one (455–462 nm) have been achieved by tunable self-frequency conversion processes using the quasiphase matching technique, without any angle or thermal tuning of the laser crystal. The results evidence that the system is a reliable candidate for compact tunable coherent devices based on diode pumped Nd³⁺ active ions, which are of interest in many technological and scientific applications. PACS 77.84.Dy; 42.79.Nv; 42.60.Fc; 42.55. Xi     

Opto-galvanic spectroscopy of some molecules in discharges: NH2, NO2, H2 and N2

The change of the discharge voltage when laser light crossing the discharge is tuned to a molecular transition has been measured. Experiments have been performed in the wavelength region between 570 nm and 620 nm with discharges in NH₃, NO₂, H₂, N₂, O₂ and argon. Transitions from the ground states of NH₂ and NO₂ and transitions from metastable states of N₂ and H₂ have been detected. The spacial dependence of the opto galvanic in a low pressure dc-discharge of H₂ and N₂ has been studied.     

氧化硅层中的锗纳米晶体团簇量子点

采用氧化和析出的方法在氧化硅中凝聚生成锗纳米晶体量子点结构. 其形成的锗晶体团簇没有突出的棱角和支晶结构，锗晶体团簇的轮廓较圆混，故可以用球形量子点模型来模拟实际的锗晶体团簇. 对比了在长时间退火氧化条件下和在短时间退火用激光照射氧化条件下所生成的锗纳米晶体结构的PL光谱和对应的锗纳米晶体团簇的尺寸分布. 短时间退火氧化条件下生成的锗纳米晶体较小(3.28—3.96nm)，长时间退火用激光照射氧化条件下所生成的锗纳米晶体较大(3.72—4.98nm)；其分布结构显示某些尺寸的锗纳米晶体团簇较稳定，适当的氧化条件可以得到尺寸分布范围较窄的锗纳米晶体团簇. 用量子点受限模型计算了锗纳米晶体团簇的能隙结构，用Monte Carlo方法模拟了PL光谱和对应的锗纳米晶体团簇的尺寸分布，分别与实验结果符合较好. 关键词： 锗晶体团簇 纳米晶体 量子点 激光照射     

Formation of the buffer layer of silicon suboxides SiOx in the Si/SiO2 low-dimensional heterosystem after Si+ ion implantation: Si L2, 3 X-ray emission spectra

Nanosized heterostructures n-Si/SiO₂ with different thicknesses of the oxide film (20, 500 nm) after implantation by Si⁺ ions with energies of 12 and 150 keV have been investigated using Si L _{2, 3} X-ray emission spectroscopy (the Si 3d3s → Si 2p _{1/2, 3/2} electronic transition). The ion-beam modification of the interface has been revealed and studied for the heterostructure with a silicon dioxide thickness of 20 nm. An analysis of the Si L _{2, 3} X-ray emission spectra has demonstrated that the Si⁺ ion implantation leads to the self-ordering of the structure of the initially amorphous SiO₂ film 20 nm thick due to the effect of high doses. A mechanism of ion-beam modification of the insulator-semiconductor interface has been proposed. No substantial transformation of the atomic and electronic structures of the heterostructure with a silicon dioxide thickness of 500 nm has been revealed after the ion implantation.     

激光二极管抽运下铥/镱共掺碲镓酸盐玻璃光谱特性研究

研究了808 nm和977 nm激光二极管抽运下铥/镱共掺TeO₂-Ga₂O₃-R₂O(R=Li，Na，K)玻璃光谱特性.利用Judd-Ofelt 理论计算了Tm³⁺离子在碲镓酸盐玻璃中自发辐射跃迁概率、荧光分支比和辐射寿命等光谱参数.在977 nm激光二极管抽运下，观测到Tm³⁺/Yb³⁺共掺碲镓酸盐玻璃很强的476 nm上转换蓝光(¹G₄→³H₆)和较弱的650 nm上转换红光(¹G₄→³H₄和³F_2，3→³H₆).分析表明476 nm蓝光发射为三光子吸收过程，650 nm红光发射为双光子和三光子混合吸收过程；而在808 nm激光二极管抽运下，玻璃上转换蓝色荧光为双光子吸收过程.实验发现，随着碱金属离子半径的增大，977 nm激光二极管抽运下蓝光上转换发光强度增强，而用808 nm激光二极管抽运蓝光上转换发光无明显的变化. 关键词： 碲镓酸盐玻璃 铥镱共掺 Judd-Ofelt 理论 上转换     

Intense White Luminescence from Combustion Synthesized Ca<Subscript>12</Subscript>Al<Subscript>14</Subscript>O<Subscript>33</Subscript>: Yb<Superscript>3+</Superscript>/Yb<Superscript>2+</Superscript> Single Phase Phosphor

The Ca₁₂Al₁₄O₃₃: Yb³⁺/Yb²⁺ single phase nano-phosphor has been synthesized through combustion route and its luminescence and lifetime studies have been carried out up to 20 K using 976 and 266 nm excitations. The samples heated in open atmosphere have shown the presence of Yb in Yb³⁺ and Yb²⁺ states. The 976 nm excitation results a cooperative upconversion emission at 486 nm due to the Yb³⁺ state and a broad band in the blue region and has been assigned to arise from the defect centers. The 266 nm excitation on the other hand results a broad emission band even from as-synthesized phosphor without doping of Yb, the width of which increases in presence of Yb due to the emission from Yb²⁺ ions formed in heated samples. The white emission covers almost whole visible region with bandwidth 190 nm. The ions in Yb²⁺ state has been found to increase with the increase in heating temperature up to 1,273 K. A back conversion of Yb²⁺ to Yb³⁺ has been observed for higher temperatures. Effect of boric and phosphoric acids as flux on the emission properties of Yb³⁺ and Yb²⁺ states have been examined and discussed. Quantum yield of emission has also been determined for different samples.     

BH2的分子结构和势能函数

采用密度泛函理论(DFT)的B3P86方法和相对论有效原子实势理论模型(RECP)，对BH₂，BH₂⁺和BH₂^-分子进行了优化，得到这些分子基态的电子状态分别是²A′，³A′，³A″. 计算也得到了BH₂的分子结构和势能函数，它的离解能是7.752eV，BH₂分子具有C_{2V关键词： 2}')" href="#">BH₂ 分子结构 势能函数