单根Cu纳米线的制备与原位电学性质

金属纳米线是未来纳米电子器件中的重要组成部分,因此研究单根金属纳米线的电学性质具有重要的意义。相对于单根纳米线电学性质的移位测量,原位测量精确度更高,结果更可靠。目前,国际上用于原位电学性质测量的单根纳米线的最小直径为80 nm,更小直径的纳米线很难在纳米孔道中生长,其电化学生长动力学过程还不清楚,电阻率数据缺失。本文在单个蚀刻离子径迹孔道中利用电化学沉积技术成功生长了单根Cu纳米线,其直径仅为64 nm,为目前同方法最细。在此基础上,首次测量了该纳米线的电输运性质并获得了其电阻率数值。研究结果表明,利用电导法可以监测模板中单个孔道的形成和扩孔的动力学过程以及最终的孔径大小。电化学沉积时,沉积电流与沉积时间曲线清晰地揭示了纳米线的沉积动力学过程。I-V曲线研究显示Cu纳米线具有典型的金属特性。其电阻率为3.46 μ?·cm,约是Cu块体材料电阻率的两倍。电阻率增大可能与电子在晶界和表面处的散射有关。Metal nanowires, as one of the most crucial components of nanoelectronic devices in the future, have attracted enormous attention. Therefore, it is of great significance to investigate the electrical properties of single metal nanowires. Herein, the single Cu nanowire with diameter of 64 nm was successfully prepared by using single-ion track template method combined with electrochemical deposition approach, and its I-V curve was measured. Such a diameter represents the thinnest one as comparing the reported ones obtained by the same method. The results illustrated that the process of formation and growth, as well as the final diameter of single nanochannel in template can be monitored and measured by conductance method. During the electrochemical deposition, the dynamic evolution of the deposition of nanowire can be clearly reflected through the deposition current and deposition time. At the same time, I-V measurements reveal that the Cu nanowire has typical metallic characteristic. For the first time, the resistivity of such a thin nanowire is obtained and its resistivity is 3.46 μ?·cm which is around twice that of Cu bulk materials. The increase of resistivity is believed coming from finite size effects and may be related to the electrons scattering at the grain boundaries and surfaces.     

离子径迹模板法制备纳米线

重离子辐照的高分子有机膜,经过适当的处理,可以作为模板制备金属和可溶性盐纳米线,此方法称为离子径迹模板法。介绍了用电化学沉积方法和过饱和溶液法制备金属纳米线和可溶性盐纳米线的基本原理和制各实例,同时还展望了离子径迹模板法制备纳米线的一些可能的应用。The polymer foils irradiated by heavy ions can be used as temptates to prepai nanowires and some inorganic salt nanowires. It is called ＂ion-track template method＂. Compared to other templates, such as AAO template and porous silicon, etched ion-track template is more convenient and flexible. The density of the pores can be easily controlled by changing the ion fluences and the diameter of the pores can be altered through changing the etching condition. The pores of the etched ion-track template are well aligned. We present some examples of preparing metallic nanowires and inorganic salt wires by electrochemical deposition and by supersaturation solution method, respectively. We also introduce some applications of nanowires prepared with ion-track template method.     

Fe100-xPdx合金纳米线阵列的制备及其磁性研究

利用直流电沉积法在多孔阳极氧化铝模板中制备出了一系列Fe100-xPdx磁性纳米线阵列. Pd的增加使纳米线的总体磁性降低,各向异性和矫顽力也发生了较大的变化. 当Pd含量高达x=30时,纳米线仍有相当高的矫顽力(7.48 kA/m)和较明显的各向异性,但当Pd的含量增加到50%时,纳米线的易磁化方向由平行线的方向反转到垂直线的方向. 实验证明,这是由于在Fe80Pd20 和Fe70Pd30中连续的磁性相在Fe50Pd50纳米线中变成了与非磁性相相互间隔的非连续片状结构. 片状磁性相的形状各向异性使易磁化方向转变到垂直纳米线轴的方向. 从生长动力学的角度对Fe50Pd50纳米线中这种片状的形成进行了解释.     

COxCu1-x复相纳米线阵列的制备及其磁性的研究

利用电化学沉积方法在同一种富Co2 溶液Co2 /Cu2 =10:1中.利用不同的沉积电位成功地制备了一系列不同成分(x=0.38-0.87)和复合相结构的CoxCu1-x纳米线阵列.发现随着纳米线中Cu含量的变化,CoxCu1-x纳米线的复相结构随之发生规律的变化,最终导致纳米线的磁性也随之规律的变化.随着纳米线中Cu含量的不断增加,一部分Cu与Co形成面心立方结构(fcc)的CoCu固溶体,减弱了磁晶各向异性与形状各向异性的竞争,从而提高样品的方形度;一部分Cu以fcc结构的Cu单质的形式存在于纳米线中,并随着Cu颗粒大小的不同分别起到破坏磁晶各向异性和钉扎畴壁的作用,从而增加纳米线的方形度和矫顽力.对比不同成分的样品,发现CoxCu1-x纳米线的方形度和矫顽力的最大值分别出现在Co75Cu25和Co60Cu40中,并且由于其特殊的复相结构致使它们的值要好于相同直径的单相结构的结果.     

镍掺杂硅纳米线电子结构和光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理计算,对镍掺杂硅纳米线的结构稳定性、电子与光学性质进行了研究.结果表明:Ni容易占据硅纳米线表面的替代位置.镍掺杂后的硅纳米线引入了杂质能级,杂质能级主要来源于Ni的3d电子的贡献.由于Ni的3d态和Si的3p态的耦合作用,使禁带宽度变窄.掺杂后的硅纳米线在低能区出现了一个较强的吸收峰,且吸收带出现宽化现象. 关键词： 硅纳米线 掺杂 电子结构 光学性质     

自支撑Ag掺杂ZnO花状纳米线阵列及其光学性质

利用简单、温和的二步水浴法制备一种大面积自支撑、可自由迁移的Ag掺杂ZnO花状纳米线阵列。通过场发射扫描电子显微镜(FESEM)、元素能谱(EDS)、X射线衍射谱(XRD)、室温和变温光致发光谱(PL)等一系列表征手段对所制备的自支撑Ag掺杂ZnO纳米线阵列进行了研究。研究结果显示:这种自支撑纳米材料具有良好的晶体质量和光学性质,在低温(85 K)下显示出A0X和FA为主导的受主相关发射峰,通过理论公式计算受主结合能为118 meV。在变温光致发光光谱中,FA发射峰位随温度的变化符合理论模型。     

自支撑Ag掺杂ZnO花状纳米线阵列及其光学性质

利用简单、温和的二步水浴法制备一种大面积自支撑、可自由迁移的Ag掺杂ZnO花状纳米线阵列。通过场发射扫描电子显微镜（FESEM）、元素能谱（EDS）、X射线衍射谱（XRD）、室温和变温光致发光谱（PL）等一系列表征手段对所制备的自支撑Ag掺杂ZnO纳米线阵列进行了研究。研究结果显示：这种自支撑纳米材料具有良好的晶体质量和光学性质,在低温（85 K）下显示出A⁰X和FA为主导的受主相关发射峰,通过理论公式计算受主结合能为118 meV。在变温光致发光光谱中,FA发射峰位随温度的变化符合理论模型。     

AuPd纳米粒子作为催化剂制备硼纳米线及其场发射性质

利用化学气相沉积法,采用不同组分的金属合金纳米粒子AuPd作为催化剂,在Si(111)基底上成功制备大面积、高密度的硼纳米线薄膜.纳米线的平均长度约为10μm,直径在50—130 nm之间.结构分析表明,纳米线为单晶结构,硼纳米线的直径随着元素Pd在合金催化剂中比例的增加而减少.场发射特性测试结果表明,通过调整催化剂组分可以实现对硼纳米线的尺寸和密度的调控.     

Fe100－xPdx合金纳米线阵列的制备及其磁性研究

利用直流电沉积法在多孔阳极氧化铝模板中制备出了一系列Fe_100-xPd_x磁性纳米线阵列. Pd的增加使纳米线的总体磁性降低，各向异性和矫顽力也发生了较大的变化. 当Pd含量高达x=30时，纳米线仍有相当高的矫顽力(7.48 kA/m)和较明显的各向异性，但当Pd的含量增加到50%时，纳米线的易磁化方向由平行线的方向反转到垂直线的方向. 实验证明，这是由于在Fe₈₀Pd₂₀和Fe₇₀Pd₃₀中连续的磁性相在Fe₅₀Pd₅₀纳米线中变成了与非磁性相相互间隔的非连续片状结构. 片状磁性相的形状各向异性使易磁化方向转变到垂直纳米线轴的方向. 从生长动力学的角度对Fe₅₀Pd₅₀纳米线中这种片状的形成进行了解释. 关键词： 纳米线 电化学沉积 磁性     

CoxCu1-x复相纳米线阵列的制备及其磁性的研究

利用电化学沉积方法在同一种富Co²⁺溶液Co²⁺/Cu²⁺=10∶1中,利用不同的沉积电位成功地制备了一系列不同成分(x=0.38—0.87)和复合相结构的Co_xCu_1-x纳米线阵列.发现随着纳米线中Cu含量的变化,Co_xCu_1-x纳米线的复相结构随之发生规律的变化,最终导致纳米线的磁性也随之规律的变化.随着纳米线中Cu含量的不断增加,一部分Cu与Co形成面心立方结构(fcc)的CoCu固溶体,减弱了磁晶各向异性与形状各向异性的竞争,从而提高样品的方形度;一部分Cu以fcc结构的Cu单质的形式存在于纳米线中,并随着Cu颗粒大小的不同分别起到破坏磁晶各向异性和钉扎畴壁的作用,从而增加纳米线的方形度和矫顽力.对比不同成分的样品,发现Co_xCu_1-x纳米线的方形度和矫顽力的最大值分别出现在Co₇₅Cu₂₅和Co₆₀Cu₄₀中,并且由于其特殊的复相结构致使它们的值要好于相同直径的单相结构的结果. 关键词： 纳米线 电化学沉积 磁性     

电化学沉积Fe与FePd纳米线阵列的磁性

利用电化学沉积方法在氧化铝模板中制备了一维Fe和Fe_095Pd_{0 05}合金纳米线阵列.两种样品均有(110)晶向择优取向，纳米线直径为60nm.在这一直径下形状各向异性 和内禀晶体各向异性的竞争结果很适合考察Pd掺杂的磁性行为.研究发现在FePd纳米线中， 由于极少量Pd在Fe中的合金化，减弱了晶体各向异性与形状各向异性的影响，改变了磁畴结 构，增强了畴壁钉扎作用，结果在Fe_095Pd_005纳米线 中便显示出强烈的沿线方向的各向异性，方形度和矫顽力也有较大改善. 关键词： 纳米线 电化学沉积 磁性     

强辐射源用铜纳米线阵列靶的结构与性能

 采用多孔阳极氧化铝（AAO）模板脉冲电沉积法制备了强辐射源用铜纳米线阵列靶,并用扫描电子显微镜（SEM）、能谱（EDS）和X射线衍射（XRD）对其进行了结构表征。结果表明：去除AAO模板后铜纳米线平均直径比去除AAO模板前的平均孔径大32%,长度缩短5%。对电沉积2 000 s的样品进行铜纳米线长度分布表征,结果显示:距离模板圆心越远,铜纳米线越长。与超短脉冲激光相互作用实验结果表明:纳米线平均长度在18~50 μm范围内,铜Kα光子产额先随纳米线长度增加而增加,当长度大于33 μm时,铜Kα光子产额开始下降。     

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied.The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes.The current increases linearly with the bias,indicating good ohmic contacts between the nanowire and the electrodes.The resistivity of the ZnO nanowire is calculated to be 3.8 ·cm.We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes(λ = 505 nm,460 nm,375 nm) as excitation sources in atmosphere.When individual ZnO nanowire is exposured to different light irradiation,we find that it is extremely sensitive to UV illumination;the conductance is much larger upon UV illumination than that in the dark at room temperature.This phenomenon may be related to the surface oxygen molecule adsorbtion,which indicates their potential application to the optoelectronic switching device.     

The effect of substrate on magnetic properties of Co/Cu multilayer nanowire arrays

Ordered Co/Cu multilayer nanowire arrays have been fabricated into anodic aluminium oxide templates with Ag and Cu substrate by direct current electrodeposition. This paper studies the morphology, structure and magnetic properties by transmission electron microscopy, selective area electron diffraction, x-ray diffraction, and vibrating sample magnetometer. X-ray diffraction patterns reveal that both as-deposited nanowire arrays films exhibit face-centred cubic structure. Magnetic measurements indicate that the easy magnetization direction of Co/Cu multilayer nanowire arrays films on Ag substrate is perpendicular to the long axis of nanowire, whereas the easy magnetization direction of the sample with Cu substrate is parallel to the long axis of nanowire. The change of easy magnetization direction attributed to different substrates, and the magnetic properties of the nanowire arrays are discussed.     

Fabrication and optical properties of platinum nanowire arrays on anodic aluminium oxide templates

Arrays of Pt nanowires, fabricated by electrodepositing Pt metal into nanoporous anodic aluminium oxide (AAO) templates, exhibit a preferable optical absorption band in the ultraviolet-visible (UV-VIS) spectra and present a blueshift as the wire aspect ratio increases or its radius decreases. This type of optical property of Pt nanowire/porous alumina composites has been theoretically explored using Maxwell－Garnett (MG) effective medium theory. The MG theory, however, is only applicable to nanowires with an infinitesimally small radius relative to the wavelength of an incident light. The nanowire radius is controlled by the pore radius of the host alumina, which depends on anodizing conditions such as the selected electrolyte, anodizing time, temperature and voltage. The nanowire aspect ratios depend on the amount of Pt deposited into the nanopores of AAO films. The optical absorption properties of the arrays of Pt nanowires with diameters of 24, 55 and 90 nm have been investigated by the UV-VIS spectra, which show that the extinction maximum (λ_max) shifts to shorter wavelength side as the wire aspect ratio increases or its radius decreases. The results are qualitatively consistent with those calculated based on the MG theory.     

强辐射源用铜纳米线阵列靶的结构与性能

采用多孔阳极氧化铝（AAO）模板脉冲电沉积法制备了强辐射源用铜纳米线阵列靶,并用扫描电子显微镜（SEM）、能谱（EDS）和X射线衍射（XRD）对其进行了结构表征。结果表明：去除AAO模板后铜纳米线平均直径比去除AAO模板前的平均孔径大32%,长度缩短5%。对电沉积2 000 s的样品进行铜纳米线长度分布表征,结果显示:距离模板圆心越远,铜纳米线越长。与超短脉冲激光相互作用实验结果表明:纳米线平均长度在18~50 μm范围内,铜Kα光子产额先随纳米线长度增加而增加,当长度大于33 μm时,铜Kα光子产额开始下降。     

模板法交流沉积金纳米线的影响因素

使用交流电沉积在多孔氧化铝模板中制备金纳米线,对交流电沉积时阻挡层厚度、交流电压、交流频率等因素进行了系统的研究和探讨。使用交流电沉积制备出了直径30 nm、长度2.1 m的形貌完好、长度均一的金纳米阵列。结果表明模板的阻挡层厚度能够显著影响金属的沉积电位,是保证沉积顺利进行的重要因素。通过记录、分析不同条件下交流沉积过程中时间-电流曲线来对交流沉积过程进行深入研究并提出相应机理。发现同频率下平台电流值不变,纳米线的长度与交流电压大小成正比,而同电压下沉积的平台电流与交流电频率成正比,这些都与阻挡层的半导体特性有关。     

云母/交联聚苯乙烯复合材料制备及沿面闪络性能

交联聚苯乙烯具有优异的电气性能、力学性能和可加工性能,已作为高压绝缘材料得到了重要应用。随着脉冲功率技术向小型化方向发展,对交联聚苯乙烯真空沿面闪络性能提出了更高要求。以苯乙烯为单体,二乙烯基苯为交联剂,偶氮二异丁腈为引发剂,采用超声波分散技术将不同质量分数的云母均匀分散于溶液体系中,通过原位自由基聚合制备出云母/交联聚苯乙烯复合材料。采用红外光谱、电子扫描显微镜等对材料组成和形貌进行了表征,采用短脉冲高压测试平台研究了云母对交联聚苯乙烯真空沿面闪络性能的影响。结果表明,当云母质量分数低于5%时,复合材料中云母为均匀分散状态,随着掺杂量进一步提升,出现了明显的团聚现象;当云母质量分数为3.5%~5%之间时,真空沿面闪络击穿电压和耐电寿命较交联聚苯乙烯得到了明显提升。