Unified Treatment of Systematics for Even-Even Nuclei with A≥70

By the concept of effective boson numbers, systematics of E₂₁+E₄₁+E₆₁+, R=E₂₁+/E₄₁, B(E2, 0₁⁺→2₁⁺) and Q₀ for even-even nuclei with A≥70 are presented. New features of energy spectra are noticed and an intuitive understanding is given.     

ELECTROREFLECTANCE SPECTRA OF GexSi1-x/Si STRAINED LAYER MULTIPLE-QUANTUM WELLS

We have investigated the optical transitions above the fundamental gap of a set of Ge_xSi_1-x/Si strained layer multiple-quantum wells by electroreflectance (ER). The sam-ples were grown by molecular beam espitaxy (MBE). The thickness of the strained layer of Ge_xSi_1-x was 5nm with Ge concentration x in the range from 0.4 to 0.5, and the Si barrier layer greater than 16nm. Considering the energy shift caused by strain and quantum well confinement, we were able to clearly recognize the transitions from different quantum well structures associated with the critical points E₀, E′₀, and E₁. The transitions of the critical points E₀ and E′₀, which are very weak in bulk mateials, are apparently enhanced in the quantum well structures.     

半绝缘GaAs的双调制反射光谱研究

半导体材料电子能带结构的确定对研究其物理性质及其在半导体器件方面的应用有重要意义.光调制反射光谱是一种无损和高灵敏度的表征半导体材料电子能带结构的光学手段.光调制反射光谱中激光调制导致的材料介电函数的变化在联合态密度奇点附近表现得更为明显.通过测量这些变化,可以得到有关材料能带结构临界点的信息.然而在传统的单调制反射光谱中,激光调制信号的光谱线型拟合和临界点数目的分析往往被瑞利散射和荧光信号所干扰.本文将双调制技术与双通道锁相放大器结合,消除了瑞利信号和荧光信号的干扰,获得了具有较高信噪比的调制反射光谱信号.双通道锁相放大器可以同时解调出反射光谱信号及其经泵浦激光调制后的细微变化量,避免了多次采集时可能存在的系统误差.利用这种技术,在可见激光(2.33 eV)泵浦下,我们测量了半绝缘GaAs体材料从近红外至紫外波段(1.1-6.0 eV)的双调制反射光谱,获得了多个能带结构临界点的信息.探测到了高于泵浦能量之上的与GaAs能带结构高阶临界点对应的特征光谱信号,说明带隙以上高阶临界点的光调制反射光谱本质是光生载流子对内建电场的调制,并不是来自该临界点附近的能带填充效应.这一结果表明双调制反射光谱能够对半导体材料能带结构带隙及其带隙以上临界点进行更准确的表征.     

磁场对石墨烯中弱耦合极化子性质的影响

研究了磁场作用下石墨烯中电子与表面光学声子弱耦合情况下的极化子的性质。采用线性组合算符和Pekar变分法分别推导出了石墨烯中弱耦合极化子的基态能量E₀、第一激发态能量E₁和跃迁频率ω随磁场强度B和德拜截止波数k_d之间的变化关系。数值计算结果表明,极化子的基态能量E₀随磁场强度B变化的曲线（k_d一定时）和E₀随k_d的变化曲线（B一定时）均会分裂成对称的两条,并且当B一定时E₀的绝对值随k_d的增加而增加。在k_d一定时,极化子的第一激发态能量E₁和跃迁频率ω均为磁场B的增函数;在B一定时,E₁和ω均随k_d的增加而增大。     

Invariant Sets and Exact Solutions to Higher-Dimensional Wave Equations

The invariant sets and exact solutions of the （1 ＋ 2）-dimensional wave equations are discussed. It is shown that there exist a class of solutions to the equations which belong to the invariant set E0 = {u ： ux = vxF（u）,uy = vyF（u） }. This approach is also developed to solve （1 ＋ N）-dimensional wave equations.     

硅离子注入层的电场调制反射光谱

结合剥层技术,对略高于临界剂量的P⁺注入p-Si层,进行了电解液电场调制反射(以下简称EER)光谱研究,对非均匀的结构无序材料的光学测量,提出采用“特效波长”的建议,硅的这一波长是E₁,E₁+△₁能区的349O?(hω≈3.55eV),c-Si和α-Si对3490?光波的吸收系数均等于10⁶cm^-1,将((△R)/R)_3.55ev按深度x的分布同无序度的 关键词：     

Effect of a high-frequency field on the reflection of ion acousticwaves from the sheath at a grid

Experiments are described which show that the reflection coefficient for ion acoustic waves (IAW) from the sheath at a grid is affected by an HF electric field with a frequency f_HF≲5f_pi(f_pi =ion plasma frequency). For peak-to-peak amplitudes of the HF voltage drop across the sheath Φ₀≲k_B T_e/e and f_HF>f _pi, the energy distribution of the ions passing through the grid develops a hot tail and the reflected wave suffers enhanced Landau damping. If Φ₀≳k_BT_e/e and f_HF<f_pi, a large-amplitude IAW is excited at the grid; a well-defined ion beam is formed; and local growth of the reflected wave is observed. Test waves launched from the grid show the same propagation characteristics as the reflected waves     

A Formula for E2 Transition Rates of the SU(7) Limit of the Fermion Dynamical Symmetry Model

The SO(7) limit of the fermion dynamical symmetry model (FDSM) is discussed. Using the vector coherent state theory (VCST), we construct the matrix elements of quadruple pair (D⁺) and quadrupole (P²) operators explicitly, then obtain a selection rule for E₂ transition and a formula for the E₂ transition rates of the SO(7) limit. As an experimental evidence of the FDSM's SO(7) limit, the B(E₂) values for the Pd-Ru region in this way are calculated,and the predicted results are in good agreement with the experimental data.     

Validity of the Counting Schemes of Boson Number in the Interacting Boson Model and Regularities in Systematic Studiesfor Even-Even Nuclei

The E₂₁+, E₄₁+, E₆₁+, B(E2,0₁⁺ → 2₁⁺) systematics are presented by using the total np interaction V_Np and the ratio betwyn V_Np and the total pairing strength V_pair to have a richer understanding of the wel&known N_πN_V and N_nN_p/(N_n + N_p) schemes. The different counting schemes for effective bosoh numbers and some regularities uncovered in previous studies are tested by the figures of V_NP/V_pair schemes. The systematics in the V_NP/V_pair scheme suggest that-the N_nN_p/(N_n + N_p) scheme holds for A ≥ 100 even-even nudei.     

不同组分厚度比的LaMnO3/SrTiO3异质界面电子结构和磁性的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了(LaMnO₃)_n/(SrTiO₃)_m(LMO/STO)异质界面的离子弛豫、电子结构和磁性质. 研究表明, 不同组分厚度比及界面类型时, 离子弛豫程度各不相同, 并且界面处的电子性质受此影响较大. 对于n型界面, 当LMO的厚度达到6个单胞层后, 电子会从LMO转移到STO, 转移的电子占据界面层Ti原子的3d电子轨道, 界面处出现二维电子气. 对于n型界面(LMO)_n/(STO)₂, 随着LMO厚度数n的增加, 由离子弛豫造成的结构畸变减小, 而界面处Ti原子周围电子的态密度和自旋极化却增大, 表明高厚度比的n型界面有利于产生高迁移率的二维电子气和自旋极化. 而对于p型(LMO)₂/(STO)₈界面, 在STO一侧基本没有结构畸变, 界面处无电子转移和自旋极化现象. 通过计算平均静电势发现n型和p型界面处的势差大小相差2 eV, 解释了p型界面不容易发生电荷转移的原因.     

Invariant Sets and Exact Solutions to Nonlinear Diffusion Equations with x-Dependent Convection and Absorption

In this paper, we introduce a new invariant set ˜E₀={u:u_x=f^ˊ(x)F(u)+ε [g^ˊ(x) -f^ˊ(x)g(x)]F(u)exp(-∫^u(1/F(z))dz), where f and g are some smooth functions of x, ε is a constant, and F is a smooth function to be determined. The invariant sets and exact solutions to nonlinear diffusion equation u_t=(D(u)u_x)_x+Q(x,u)u_x+P(x,u), are discussed. It is shown that there exist several classes of solutions to the equation that belong to the invariant set ˜E₀.     

CVD法单层MoS2在209Bi离子辐照下的损伤效应研究

通过光学显微镜、拉曼光谱确定了CVD（化学气相沉积法）制备的不同厚度MoS₂的层数,采用拉曼分析结合原子力显微镜观测分析了由HIRFL提供的高能209Bi离子辐照CVD制备的单层MoS₂样品随辐照注量的损伤规律。随辐照注量增加,E_2g1和A_1g两种声子振动模式对应的拉曼峰逐渐蓝移,且拉曼特征峰强度减弱,这是由于带正电荷的209Bi辐照产生潜径迹型晶格缺陷吸附空气中氧分子而引入p型掺杂引起的。同时,在辐照注量为5×1010 ions/cm2的单层MoS₂的AFM图像中观察到潜径迹主要以凹坑形式出现,与机械剥离法观测到的凸起径迹明显不同,分析了不同制备工艺对径迹形貌的影响。比较了机械剥离法制备MoS₂样品的拉曼光谱和AFM成像的实验数据和结果,认为不同制备方法会影响单层或少层MoS₂的电子密度。The layer number of MoS₂ with different thickness was determined by the optical microscope and Raman spectra. And the damage effect of the CVD (chemical vapor deposition) prepared single-layer MoS₂ sample irradiated by 209Bi ions was analyzed by the combination of Raman analysis and AFM observations. With the increase of irradiation fluence, the Raman characteristic peaks of E_2g1 and A_1g corresponding to both phonon vibration modes gradually bluely shift, and the intensity of the peaks obviously decreased. This is due to the fact that the 209Bi ion irradiation results in the latent track type lattice defects and they adsorb the oxygen molecules in the air ended with the p-type doping. Meanwhile, from the AFM image of the mono-layer of irradiated MoS₂ under the 5×1010 ions/cm2, it can been seen that latent tracks mainly occur in the form of pits, which different from the hillock tracks observed by mechanical stripping method. The influence of different preparation technology to the track morphology is analyzed. Compared with the Raman and AFM results of MoS₂ prepared by mechanical stripping, it is considered that different preparation methods will affect the electron density in single or few layers of MoS₂.     

Molecular dynamics simulations on the wet/dry self-latching and electric fields triggered wet/dry transitions between nanosheets: A non-volatile memory nanostructure

We design a nanostructure composing of two nanoscale graphene sheets parallelly immersed in water.Using molecular dynamics simulations,we demonstrate that the wet/dry state between the graphene sheets can be self-latched;moreover,the wet→dry/dry→wet transition takes place when applying an external electric field perpendicular/parallel to the graphene sheets(E;/E;).This structure works like a flash memory device(a non-volatile memory):the stored information(wet and dry states)of the system can be kept spontaneously,and can also be rewritten by external electric fields.On the one hand,when the distance between the two nanosheets is close to a certain distance,the free energy barriers for the transitions dry→wet and wet→dry can be quite large.As a result,the wet and dry states are self-latched.On the other hand,an E;and an E;will respectively increase and decrease the free energy of the water located in-between the two nanosheets.Consequently,the wet→dry and dry→wet transitions are observed.Our results may be useful for designing novel information memory devices.     

COMPACTIFICATION FROM E8 × E8 TO THE STANDARD MODEL

The comnactification of the D=10 E₈ × E₈ field theory limit of superstring to the D=4 SU₃ × SU₂ × U₁ standard model is investigated by means of the scheme developed by Manton, Forgacs and Chapline.     

Luminescent properties of Ce in MSO4 (M: Ca, Sr and Ba) and the effect of Na co-doping

The optical properties of Ce³⁺ in CaSO₄, SrSO₄ and BaSO₄ are reported. The Ce³⁺ ion shows 4f⁰5d¹→²F_5/2,²F_7/2 luminescence in all three sulphates. Co-doping with Na⁺ does not change the local surrounding of the Ce³⁺ ion, but enhances the amount of Ce³⁺ ions built in. Under optical excitation, besides the typical Ce³⁺ doublet emission in the ultraviolet spectral region, band emission around 445 nm was observed. This band emission was not assigned to emission from a Ce³⁺ centre, but to emission from an impurity-trapped exciton. Under X-ray excitation, both Ce³⁺ emission and an emission band around 380 nm was observed. This band was assigned to emission from a self-trapped exciton.     

Higher Genus Solutions for the N × N Matrix Model

For the N × N Hermitian matrix model with a potential of quartic anharmonic term, a general expression of vacuum energy E_H for arbitrary genus H is presented, and higher genus solutions E₃, E₄ and E₅ are evaluated explicitly.     

EXAFS曲线拟合数据分析中能量阈值调节参量影响的模型研究

本文就EXAFS研究非晶态合金原子近邻结构时曲线拟合数据分析中能量阈值调节参量对分析结果的影响进行了模型计算,并且提出了解决方法。     

Oscillating two-stream instability of a plasma wave in a plasmachannel

A long wavelength Langmuir wave (ω₀, k₀), propagating through a parabolic plasma density channel, can decay into a low-frequency mode (ω,k&oarr;) and two short wavelength Langmuir wave sidebands (ν_1,2,k&oarr;_1,2 ), via two-stream instability where ω_1,2=ω∓ω₀ and k&oarr;_1,2=k&oarr;∓k&oarr;₀. Depending on the mode number n, the growth rate maximizes in the range γ_max≃0.1ω_pi-0.4ω_pi for the range of k from 0.1(ω_pi/c_s) to 0.2(ω_pi/c_x) for ν₀~ν_th where ν₀ and ν_th are the oscillatory and thermal velocities of electrons, ω_pi is the ion plasma frequency on the axis, and c_s is the sound speed. The growth rate increases with the width a of the plasma density channel. It decreases with the mode number. The instability may be relevant to laser based charged particle accelerators     

晚期HEMP作用下铁路牵引供电系统GIC算法研究

高空核爆电磁脉冲晚期效应（E₃）会引起地磁场剧烈变化并形成地面感应电场。感应电场等效为激励源与地面长距离导体和大地构成回路,产生地磁感应电流 （GIC）。GIC可引起牵引供电系统中变压器直流偏磁,从而严重威胁牵引供电系统的安全运行。本文基于平面波理论、分层大地电导率模型并结合牵引供电系统的电路模型,提出E₃作用下的牵引供电系统GIC算法,并以带回流线的直接供电方式的铁路牵引供电系统为例,首次计算了系统GIC情况。结果表明,该供电方式下牵引供电系统中的GIC远大于系统中变压器等设备的耐受值,为进一步研究E₃作用下牵引供电系统效应及我国铁路设备选型、灾害防治等提供支撑。     

非自治物质畸形波的传播操控

研究了(1+1)维的变系数Gross-Pitaevskii方程, 获得了该方程的精确畸形波解. 基于该精确畸形波解, 深入研究了非自治物质畸形波在随时间指数变化的相互作用下的传播动力学行为, 发现非自治畸形波除具有“来无影、去无踪”的不可预测特性外, 也可实现完全激发、抑制激发以及维持激发等操控. 研究表明, 畸形波操控的关键是对累积时间的最大值T_max 与峰值位置T₀ (或T_I,T_II)值大小关系的调节. 当T_max > T₀ (或T_I,T_II)时畸形波被快速地完全激发, 热原子团中的原子增加到凝聚体中. 当T_max = T₀ (或T_I,T_II) 时畸形波激发到最大振幅, 可以维持相当长的时间而不消失, 热原子团中的原子增加到凝聚体中. 当T_max < T₀ (或T_I,T_II)时畸形波没有充足的时间来激发而被抑制甚至消失, 凝聚体中的原子减少. 这些结果在理论和实际应用上具有启迪意义.