单一混合固态源PE-MOCVD法制备YSZ薄膜及其表征

采用等离子体增强的MOCVD技术,以均匀混合的金属β-二酮鳌合物固态源Y(DPM)₃和Zr(DPM)₄作为前驱物,在NiO/SDC多孔阳极和多孔-αAl₂O₃衬底上制备了氧化钇稳定的氧化锆(YSZ)薄膜.研究了两种衬底对成膜过程和膜的结构以及微结构的影响,讨论了源区输运机制及薄膜生长动力学.XPS分析结果表明,薄膜中Y和Zr元素的摩尔比低于原始混合源中的Y和Zr元素的摩尔比,当混合源中的Y和Zr元素的摩尔比约为0.35:1时,可以获得无定形态的8%YSZ薄膜,经高温焙烧转化为单一立方相,其晶粒大小约为100nm,薄膜的生长速率约为7nm/min.     

化学法制备的四方相纳米Y~2O~3-ZrO~2的X射线与Raman光谱分析

用化学方法制备出Y~2O~3掺杂的四方相纳米ZrO~2。对制得产物进行X射线衍射分析与Raman光谱分析表明,该四方相纳米ZrO~2是一种亚稳相。随晶粒长大,纳米尺寸效应减小,四方相ZrO~2结构会遭到部分破坏,形成少量共存单斜相。Raman光谱研究还揭示,经600℃烧结的四方相纳米ZrO~2中的Zr-O(Ⅱ)键随样品的致密化而增强。     

由组分可控的LB膜前驱物法制备Y2O3稳定立方相ZrO2的超薄陶瓷膜

由有机LB膜技术发展了一种制备组分、厚度可控的无机超薄陶瓷膜的方法.以Zr、 Y的β-二酮络合物的作为"表面离子"代替传统的亚相离子,沉积它们与花生酸的混合LB膜.并将它作为前驱物,经臭氧处理和热处理,成功制得了Y2O3稳定的立方相ZrO2超薄膜(YSZ).用X射线衍射(XRD)、 X射线光电子能谱(XPS)等手段研究了YSZ薄膜的相结构和其组成.结果表明,超薄陶瓷膜中Zr与Y的含量比率控制得很好,且形成Y2O3稳定的立方相ZrO2.说明这种方法可以成功地用来制备组分和膜厚均可控的纳米陶瓷膜.     

MCM-41负载钨磷杂多酸催化剂的性能研究

制备并表征MCM-41负载H~3PW~1~2O~4~0(PW)催化剂.PW杂多酸在MCM-41上负载量高达70%(质量分数)时,XRD中仍未检测到其晶相峰.PW杂多酸与MCM-41载体的相互作用要比与SiO~2载体的强.PW杂多酸中的质子位是非常强的酸中心,它们对NH~3的微分吸附热在160-180kJ/mol的范围.与PW杂多酸相比,PW/MCM-41催化剂的酸中心强度变弱并且分布不均匀,其酸量和酸中心分布可以通过改变PW杂多酸的负载量来调节.PW/MCM-41是一类适合于中强酸和弱酸催化反应的新型固体酸催化剂。     

S~2O~8^2^-处理的ZrO~2固体超强酸上的正丁烷异构化反应

首次报道了由浸渍过硫酸根的方式制备固体超强酸。讨论了焙烧温度、浸渍浓度以及ZrO~2前驱体沉淀条件对样品性质的影响,并研究了它们对正丁烷异构化反应性能。实验结果表明,600-650℃焙烧、0.25-0.50mol/LS~2O~8^2^-浸渍反加沉淀的ZrO~2具有最高超强酸性。与相同条件下制备的SO~4^2^-/ZrO~2相比,S~2O~8^2^-/ZrO~2上正丁烷250℃异构化活性是SO~4^2^-/ZrO~2的2倍,可能是由于它具有较多的中强酸位并具有与SO~4^2^-/ZrO~2不同的活性位结构。     

有机酸在γ-Al2O3表面自发单层分散及苯甲酸-γ-Al2O3表面结构的研究

有机酸如苯甲酸,水杨酸,邻-或对-苯二甲酸,酒石酸均可在γ-Al~2O~3表面自发单层分散,分散的临界温度取决于有机酸分子中极性基团的数目和极性的强弱。XRD,Raman,FT-IR,UV-vis和TG对苯甲酸-γ-Al~2O~3体系的表征结果表明,苯甲酸在室温下即可在γ-Al~2O~3表面自发单层分散;分散后,苯甲酸分子间的氢键缔合结构垮塌;苯甲酸的羧基与γ-Al~2O~3表面羟基发生相互作用并缩水形成类似羧酸盐的结构;分子中的苯环与载体表面没有直接的相互作用。XRD相定量测得的分散阈值为1.1mmol苯甲酸/100m^2γ-Al~2O~3,与按苯环垂直表面计算所得的最大分散容量1.2mmol/100m^2相近。     

有机酸在γ-Al~2O~3表面自发单层分散及苯甲 酸-γ-Al~2O~3表面结构的研究

有机酸如苯甲酸,水杨酸,邻-或对-苯二甲酸,酒石酸均可在γ-Al~2O~3表面自发单层分散,分散的临界温度取决于有机酸分子中极性基团的数目和极性的强弱。XRD,Raman,FT-IR,UV-vis和TG对苯甲酸-γ-Al~2O~3体系的表征结果表明,苯甲酸在室温下即可在γ-Al~2O~3表面自发单层分散;分散后,苯甲酸分子间的氢键缔合结构垮塌;苯甲酸的羧基与γ-Al~2O~3表面羟基发生相互作用并缩水形成类似羧酸盐的结构;分子中的苯环与载体表面没有直接的相互作用。XRD相定量测得的分散阈值为1.1mmol苯甲酸/100m^2γ-Al~2O~3,与按苯环垂直表面计算所得的最大分散容量1.2mmol/100m^2相近。     

CXN天然沸石的研究1: 离子交换与结构性质表征

采用离子交换和焙烧等方法,对我国CXN天然沸石(STI型)进行改性。应用化学分析,粉末XRD,TG/DTA,^2^7AlMASNMR,^2^9SiMASNMR,低温N~2吸附等方法表征相关的结构、离子交换等性质。CXN沸石的晶胞组成Na~0~.~2Mg~0~.~1Ca~8~.~4[Al~1~7~.~2Si~5~4~.~8O~1~4~4].65H~2O,属富钙型。经离子交换脱Ca^2^+后的沸石在焙烧过程中伴随有骨架脱铝,骨架的热稳定性已由原样的500℃以下提高到700℃以上。交换改性后的沸石,呈现反映该沸石微孔特性的I型氮吸附等温线。     

CXN天然沸石的研究1: 离子交换与结构性质表征

采用离子交换和焙烧等方法,对我国CXN天然沸石(STI型)进行改性。应用化学分析,粉末XRD,TG/DTA,^2^7AlMASNMR,^2^9SiMASNMR,低温N~2吸附等方法表征相关的结构、离子交换等性质。CXN沸石的晶胞组成Na~0~.~2Mg~0~.~1Ca~8~.~4[Al~1~7~.~2Si~5~4~.~8O~1~4~4].65H~2O,属富钙型。经离子交换脱Ca^2^+后的沸石在焙烧过程中伴随有骨架脱铝,骨架的热稳定性已由原样的500℃以下提高到700℃以上。交换改性后的沸石,呈现反映该沸石微孔特性的I型氮吸附等温线。     

夹心杂多化合物的合成及晶体结构

PW~9O~3~4^9^-(简写PW~9)阴离子可以与Sn^4^+反应生成[Sn~3^I^V(PW~9O~3~4)~2]^6^-杂多化合物。标题化合物经元素分析、红外、极谱、^3^1P和^1^8^3W核磁共振谱、X射线光电子能谱及X射线单晶测定了结构。K~5O~4Na~4H~5[Sn~3(PW~9O~3~4)~2].16H~2O的单晶是单斜晶系,空间群P2~1/n,晶胞参数a=1.3625(3)nm,b=2.3625(5)nm,c=2.9306(6)nm,α=90ⅲ,β=99.67(3)ⅲ,γ=90ⅲ,V=9.299nm^3,Z=4。它是一种三个Sn^4^+在两个PW~9单元间的夹心结构。     

Oxidation behaviour of uranium and neptunium in stabilised zirconia

Yttria stabilised zirconia (YSZ) based (Zr,Y,U)O_2−x and (Zr,Y,Np)O_2−x solid solutions with 6 and 20 mol% actinide were prepared with Y/Zr ratios ranging from 0.2 to 2.0 to investigate uranium and neptunium oxidation behaviour depending on the oxygen vacancies in the defect fluorite lattice. Sintering at 1600 °C in Ar/H₂ yields a cubic, fluorite-type structure with U(IV) and Np(IV). Annealing (Zr,Y,U)O_2−x with Y/Zr=0.2 at 800 °C in air results in a tetragonal phase, whereas (Zr,Y,U)O_2−x with higher Y/Zr ratios and (Zr,Y,Np)O_2−x retain the cubic structure. XANES and O/M measurements indicate mixed U(V)-U(VI) and Np(IV)-Np(V) oxidation states after oxidation. Based on X-ray diffraction, O/M and EXAFS measurements, different oxidation mechanisms are identified for U- and Np-doped stabilised zirconia. In contrast to U, excess oxygen vacancies are needed to oxidise Np in (Zr,Y,Np)O_2−x as the oxidation process competes with Zr for oxygen vacancies. As a consequence, U(VI) and Np(V) can only be obtained in stabilised zirconia with Y/Zr=1 but not in YSZ with Y/Zr=0.2.     

Ionic conductivity and activation energy for oxygen ion transport in superlattices--the semicoherent multilayer system YSZ (ZrO2 + 9.5 mol% Y2O3)/Y2O3

The oxygen ion conductivity of YSZ (ZrO(2) + 9.5 mol% Y(2)O(3))/Y(2)O(3) multilayer systems is measured parallel to the interfaces as a function of temperature between 350 and 700 degrees C. The multilayer samples are prepared by pulsed laser deposition (PLD). The film thicknesses, the crystallinity, the texture and the microstructure are investigated by SEM, XRD, HRTEM and SAED. To separate the interface contribution of the total conductivity from the bulk contribution the thickness of the YSZ and Y(2)O(3) layers is varied systematically. The total conductivity of the YSZ films increases when their thickness is decreased from 0.53 microm to 24 nm. It depends linearly on the reciprocal thickness of the individual layers, thus on the number of YSZ/Y(2)O(3) interfaces. This behaviour results from the parallel connection between individual conduction paths in the bulk and the interfacial regions. The activation energy for the ionic conductivity decreases from 1.13 to 0.99 kJ mol(-1) by decreasing the thicknesses of the individual YSZ layers. HRTEM studies show that the YSZ/Y(2)O(3) interfaces are semicoherent. The correlation between interface structure and ionic conduction is discussed.     

Role of surface defects in activation of O2 and N2O on ZrO2 and yttrium-stabilized ZrO2

The relationship between the structure of both yttrium-stabilized zirconia (YSZ) and ZrO2 catalysts and their ability to activate N2O and O2 is studied by determination of catalytic properties and characterization with TPD, SEM, and XRD. Furthermore, the role of oxygen species formed via dissociation of either O2 or N2O in catalytic partial oxidation of methane (CPOM) is determined. N2O can be activated at both structural defects (e.g., Zr cations located at corners) and intrinsic oxygen vacancies (Zr'(Zr)-V(O)**Zr'(Zr)) and forms two types of oxygen species (alpha-O and beta-O) on the surface, respectively. In contrast, molecular oxygen gives rise to only one type of oxygen species (beta-O), that is, surface lattice oxygen. This type of oxygen species can be extracted by reaction with methane, forming the intrinsic oxygen vacancies again during CPOM. However, the structural defects are not active for oxygen activation during CPOM. Doping ZrO2 with Y2O3 significantly decreases the number of structural defects via replacement of Zr4+ cations by Y3+ cations, located at corners, steps, kinks, and edges of the crystallites. Calcination at higher temperatures results in less structural defects due to both increasing crystallite size as well as transformation to more regular shaped crystallites. High temperature calcinations also increase the activity of YSZ in CPOM. This is attributed to the increase in the exposition of low index planes, especially those (111) with the lowest surface energy and the highest coordination numbers, induced by the thermal treatment.     

以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究

采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.     

单相Ce0.5Zr0.5O2立方固溶体的高压高温合成

以化学沉淀法制备的 Ce O2 和 Zr O2 纳米微粒为前驱体 ,首次在高压高温 (3 .1 GPa,1 0 73 K)下合成了单相 Ce0 .5Zr0 .5O2 面心立方固溶体 .使用 X射线衍射、TG-DTA、XPS、Raman、电子自旋共振谱和交流阻抗谱等对样品的结构、Ce离子的价态和导电性进行了表征 .实验结果表明 ,纳米 Ce O2 -50 % Zr O2 混合物在高压 (0 .9GPa以上 )高温 (1 0 73 K以上 )条件下可以发生固态反应 ,高压下固溶温度明显降低 .Ce0 .5Zr0 .5O2 面心立方固溶体在 773 K以下是热稳定的 ,不发生结构转变 ,固溶体中 Ce离子完全以 Ce4 + 形式存在 ,773 K退火也不引起 Ce4 + 向 Ce3 + 转变 ,晶格中氧缺位非常少 .Ce0 .5Zr0 .5O2 面心立方固溶体是离子导电 ,82 3 K时电导率 σ=1 .2× 1 0 -5S/cm,与纯 Ce O2 在同温度下的电导率同数量级 ;1 1 2 3 K时 σ=2 .1× 1 0 -3 S/cm,小于掺入稀土或碱土氧化物的氧化锆和氧化铈基电解质的电导率 .在高温区和低温区 ln(σT)与 1 /T的关系满足斜率不同的二条直线 ,低温活化能小于高温活化能 .固溶体的显微硬度 (50 g载荷 )为 572 HV.     

二氧化硅修饰纳米氧化锆陶瓷材料的制备及性能

以二甲基二乙氧基硅烷为硅源,在水溶液中成功制备了SiO2修饰纳米ZrO2颗粒;利用透射电子显微镜、热重分析仪、X射线衍射仪、红外光谱仪分析了样品的形貌和结构;将SiO2/ZrO2与α-Al2O3制成陶瓷材料,考察了其机械性能.结果表明,所制备的SiO2/ZrO2晶粒均一,直径约为10nm,硅原子在SiO2/ZrO2中以Si―O―Zr键合形式存在,SiO2不影响ZrO2的晶型.引入SiO2使得ZrO2晶粒细化、尺寸均匀性提高;SiO2/ZrO2/Al2O3陶瓷气孔率小,具有致密的显微结构和优异的机械性能.     

The effect of TiO2 additives on the structural stability and thermal properties of yttria fully-stabilized zirconia

TiO₂(0–20 mol%)-8 mol% YSZ (8YSZ) ceramics were synthesized by a traditional solid-state reaction method. A cubic single phase was observed for 8YSZ, 4 mol% TiO₂-8YSZ and 8 mol% TiO₂-8YSZ. Tetragonal and cubic mixed phases were observed for 12–20 mol% TiO₂-8YSZ ceramics. The sintering temperature was 1,700 °C for 8YSZ and 4 mol% TiO₂-8YSZ ceramics, whereas it was 1,500 °C for 8–20 mol% TiO₂-8YSZ. The thermal conductivity at room temperature decreased in proportion to increasing TiO₂ content, from 3.0 to 2.3 W/m K. The specific heat of TiO₂-8YSZ ceramics was unaltered as the TiO₂ content changed.     

一氧化氮选择还原锡锆固溶体催化剂的结构特性

采用双股并流共沉淀方法制备了SnO2含量从10％至90％的锡锆体系DeNOx催化剂,用XRD、微区电子衍射、FT-Raman及FT-IR等技术深入研究了锡锆体系氧化物的结构及其随组成的变化规律.结果表明，由于Sn4＋与Zr4＋离子半径接近,SnO2与ZrO2易于形成固溶体,并随组成变化表现出不同的结构特征.纯ZrO2为单斜相,当少量Sn4＋（SnO2 ≤ 20％）进入ZrO2晶格时形成四方相富锆固溶体,Sn4＋起到稳定ZrO2四方相的作用;随着SnO2含量的增大,结构从无定形或微晶态的富锆固溶体(含SnO2 30～50％)经富锆固溶体与金红石结构的富锡固溶体在55％ SnO2含量的共存状态变化到具有金红石结构的富锡固溶体（SnO2 ≥ 60％）.FT-Raman和FT-IR光谱测试证明,Zr进入SnO2晶格使得Sn－O键的结合减弱,Sn离子上的有效正电荷减小,降低了SnO2对丙烯的燃烧能力,从而提高了对NO的还原活性.