共查询到20条相似文献,搜索用时 46 毫秒
1.
A. V. Mudryi V. F. Gremenok A. V. Karotki V. B. Zalesski M. V. Yakushev F. Luckert R. Martin 《Journal of Applied Spectroscopy》2010,77(3):371-377
The chemical composition of Cu(In,Ga)Se2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy.
X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological
conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption
edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds
leads to a change in the band gap Eg for this material in the 1.05–1.72 eV spectral range at 4.2 K. 相似文献
2.
I. N. Ogorodnikov V. A. Pustovarov S. A. Yakovlev L. I. Isaenko S. A. Zhurkov 《Physics of the Solid State》2012,54(4):735-740
This paper reports on a study of the dynamics of electronic excitations in KBe2BO3F2 (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation
by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved
PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the
band gap E
g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence
bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals
have been discussed. 相似文献
3.
The photoluminescence (PL) of solar cells, based on Cu(In,Ga)Se2 and bare Cu(In,Ga)Se2 absorbers, has been studied. Shapes and intensity dependencies of the PL spectra in the junctions and in thin films are compared
and discussed in terms of influence of the junction field. Measurements of the photoluminescence in the cells biased in the
forward direction are employed in order to show straightforwardly how electric field changes the radiative recombination rate. 相似文献
4.
At 4.2 K, the photoluminescence spectra of Cu(In,Ga)Se2 films irradiated by electrons with an energy of 5 MeV displayed the 0.93-and 0.79-eV bands that owe their origin to the radiative
recombination of nonequilibrium charge carriers on radiation-induced defects. The position of the energy levels of the defects
is determined and their nature is discussed.
__________
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 805–808, November–December, 2005. 相似文献
5.
I. N. Ogorodnikov V. A. Pustovarov S. A. Yakovlev L. I. Isaenko S. A. Zhurkov 《Physics of the Solid State》2012,54(1):111-116
This paper reports on the results of the comprehensive study of the dynamics of electronic excitations in K2Al2B2O7 (KABO) crystals, obtained by low-temperature luminescence vacuum ultraviolet spectroscopy with nanosecond time resolution
upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL)
decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K;
the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible
and ultraviolet spectral regions; an intense long-wavelength PL band has been detected at 1.72 eV; channels of the formation
and decay of electronic excitations in K2Al2B2O7 crystals have been discussed. 相似文献
6.
Jérémy Barbé Jessica Eid Erik Ahlswede Stefanie Spiering Michael Powalla Rakesh Agrawal Silvano Del Gobbo 《Journal of nanoparticle research》2016,18(12):379
Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles. 相似文献
7.
W. Liu Y. Sun W. Li C.-J. Li F.-Y. Li J.-G. Tian 《Applied Physics A: Materials Science & Processing》2007,88(4):653-656
The properties of Cu(In1-xGax)Se2 (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic
devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization
of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD,
SEM, SIMS, illuminated J–V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface
region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with
the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further
improved.
PACS 61.72.Ss; 87.64.Jt; 68.60.Bs; 81.15.Cd; 84.60.Jt 相似文献
8.
Sathiabama Thiru Miki Fujita Atsushi Kawaharazuka Yoshiji Horikoshi 《Applied Physics A: Materials Science & Processing》2013,113(2):257-261
Photoluminescence (PL) characteristics have been studied on undoped and Si-doped CuGaSe2 single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-to-acceptor transition. The Si doping to CuGaSe2 produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy. 相似文献
9.
Y.H. Ye J.Y. Zhang X.M. Bao X.L. Tan L.F. Chen 《Applied Physics A: Materials Science & Processing》1998,67(2):213-217
+ -implanted SiO2 films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The
SiO2 films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. There are two excitation
bands in the PL excitation (PLE) spectra. With variation in Ge nanocrystal size, the PL and PLE peak energies show no appreciable
shift. The PL and PLE spectral analyses suggest that during the PL process, electron–hole pairs are generated by the E(l)
and E(2) direct transitions inside Ge nanocrystals, which then radiatively recombine via luminescent centers in the matrix
or at the interface between the nanocrystal/matrix.
Received: 27 January 1998/Accepted: 18 March 1998 相似文献
10.
I. N. Ogorodnikov V. A. Pustovarov M. Kirm A. V. Kruzhalov L. I. Isaenko 《Physics of the Solid State》2001,43(8):1454-1463
The dynamics of electron excitations and luminescence of LiB3O5 (LBO) single crystals was studied using low-temperature luminescence vacuum ultraviolet spectroscopy with a subnanosecond time resolution under photoexcitation with synchrotron radiation. The kinetics of the photoluminescence (PL) decay, the time-resolved PL emission spectra, and the time-resolved PL excitation spectra of LBO were measured at 7 and 290 K, respectively. The PL emission bands peaking at 2.7 eV and 3.3 eV were attributed to the radiative transitions of electronic excitations connected with lattice defects of LBO. The intrinsic PL emission bands at 3.6 and 4.2 eV were associated with the radiative annihilation of two kinds of self-trapped electron excitations in LBO. The processes responsible for the formation of localized electron excitations in LBO were discussed and compared with those taking place in wide-gap oxides. 相似文献
11.
P. Altieri M. Gurioli S. Sanguinetti E. Grilli M. Guzzi P. Frigeri S. Franchi 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(2):157-161
The presence of an extrinsic photoluminescence (PL) band peaked at 1.356 eV at low temperature is observed, on a large number
of self-assembled InAs and In0.5Ga0.5As quantum dot (QD) structures, when exciting just below the GaAs absorption edge. A detailed optical characterization allows
us to attribute the 1.356 eV PL band to the radiative transition between the conduction band and the doubly ionized Cu
Ga acceptor in GaAs. A striking common feature is observed in all investigated samples, namely a resonant quenching of the QD-PL
when exciting on the excited level of this deep defect. Moreover, the photoluminescence excitation (PLE) spectrum of the 1.356
eV emission turns out to be almost specular to the QD PLE. This correlation between the PL efficiency of the QDs and the Cu
centers evidences a competition in the carrier capture arising from a resonant coupling between the excited level of the defect
and the electronic states of the wetting layer on which the QDs nucleate. The estimated Cu concentration is compatible with
a contamination during the epitaxial growth.
Received 13 November 2001 / Received in final form 28 May 2002 Published online 19 July 2002 相似文献
12.
I. N. Ogorodnikov M. Kirm V. A. Pustovarov V. S. Cheremnykh 《Optics and Spectroscopy》2003,95(3):385-389
A complex investigation of the dynamics of electronic excitations in potassium dihydrophosphate (KDP) crystals is performed by low-temperature time-resolved vacuum ultraviolet optical luminescence spectroscopy with subnanosecond time resolution and with selective photoexcitation by synchrotron radiation. For KDP crystals, data on the kinetics of the photoluminescence (PL) decay, time-resolved PL spectra (2–6.2 eV), and time-resolved excitation PL spectra (4–24 eV) at 10 K were obtained for the first time. The intrinsic character of the PL of KDP in the vicinity of 5.2 eV, which is caused by the radiative annihilation of self-trapped excitons (STEs), is ascertained; σ and π bands in the luminescence spectra of the STEs, which are due to singlet and triplet radiative transitions, are resolved; and the shift of the σ band with respect to the π band in the spectra of the STEs is explained. 相似文献
13.
S. V. Gorbunov A. F. Zatsepin V. A. Pustovarov S. O. Cholakh V. Yu. Yakovlev 《Physics of the Solid State》2005,47(4):733-737
A time-resolved cathodo-and photoluminescence study of nanostructural modifications of Al2O3 (powders and ceramics) excited by heavy-current electron beams, as well as by pulsed synchrotron radiation, is reported. It was found that Al2O3 nanopowders probed before and after Fe+ ion irradiation have the same phase composition (the γ-phase/δ-phase ratio is equal to 1), an average grain size equal to ~17 nm, and practically the same set of broad cathodoluminescence (CL) bands peaking at 2.4, 3.2, and 3.8 eV. It was established that Al2O3 nanopowders exhibit fast photoluminescence (PL) (a band at 3.2 eV), whose decay kinetics is described by two exponential stages (τ1 = 0.5 ns, τ2 = 5.5 ns). Three bands, at 5.24, 6.13, and 7.44 eV, were isolated in the excitation spectrum of the fast PL. Two alternate models of PL centers were considered, according to which the 3.2-eV luminescence either originates from radiative relaxation of the P? centers (anion-cation vacancy pairs) or is due to the formation of surface analogs of the F+ center (F S + -type centers). In addition to the fast luminescence, nano-Al2O3 was found to produce slow luminescence in the form of a broad band peaking at 3.5 eV. The excitation spectrum of the 3.5-eV luminescence obtained at T = 13 K exhibits two doublet bands with maxima at 7.8 and 8.3 eV. An analysis of the luminescent properties of nanostructural and single-crystal Al2O3 suggests that the slow luminescence of nanopowders at 3.5 eV is due to radiative annihilation of excitons localized near structural defects. 相似文献
14.
衬底温度保持恒定, 在Se气氛下按照一定的元素配比顺序蒸发Ga, In, Cu制备厚度约为0.7 μrm的Cu(In0.7Ga0.3)Se2 (CIGS)薄膜. 利用X射线衍射仪分析薄膜的晶体结构及物相组成, 扫描电子显微镜表征薄膜形貌及结晶质量, 二次离子质谱仪测试薄膜内部元素分布, 拉曼散射谱 分析薄膜表面构成, 带积分球附件的分光光度计测量薄膜光学性能. 研究发现在Ga-In-Se预制层内, In主要通过晶界扩散引起Ga/(Ga+In)分布均匀化. 衬底温度高于450 ℃时, 薄膜呈现单一的Cu(In0.7Ga0.3)Se2相; 低于400℃, 薄膜存在严重的Ga的两相分离现象, 且高含Ga相主要存在于薄膜的上下表面; 低于300 ℃, 薄膜结晶质量进一步恶化. 薄膜表层的高含Ga相Cu(In0.5Ga0.5)Se2以小晶粒形式均匀分布于薄膜表面, 增加了薄膜的粗糙度, 在电池内形成陷光结构, 提高了超薄电池对光的吸收. 加上带隙值较小的低含Ga相的存在, 使电池短路电流密度得到较大改善. 衬底温度在550 ℃–350 ℃变化时, 短路电流密度JSC是影响超薄电池转换效率的主要因素; 而衬底温度Tsub低于300 ℃时, 开路电压VOC和填充因子FF降低已成为电池性能减退的主要原因. Tsub为350 ℃时制备的0.7 μm左右的超薄CIGS电池转换效率达到了10.3%.
关键词:
2薄膜')" href="#">Cu(In,Ga)Se2薄膜
衬底温度
超薄
太阳电池 相似文献
15.
Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In2O3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In2O3:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively. 相似文献
16.
Photoluminescence (PL), photoluminescence excitation (PLE) and selective excitation (SE-PL) studies were performed in an attempt to identify the origin of the emission bands in a pseudomorphic In0.05Ga0.95N/GaN film. Besides the InGaN near-band-edge PL emission centred at 3.25 eV an additional blue band centred at 2.74 eV was observed. The lower energy PL peak is characterized by an energy separation between absorption and emission–the Stokes’ shift–(500 meV) much larger than expected. A systematic PLE and selective excitation analysis has shown that the PL peak at 2.74 eV is related to an absorption band observed below the InGaN band gap. We propose the blue emission and its related absorption band are associated to defect levels, which can be formed inside either the InGaN or GaN band gap. 相似文献
17.
Ultraviolet photoluminescence (PL) of LiB3O5 (LBO) crystals has been studied under selective excitation by photons in the vacuum ultraviolet and ultrasoft x-ray regions, including the K-absorption edges of the Li and B cations and O anion. Radiative recombination of electron-hole pairs was established to be the main channel of the intrinsic PL excitation at 4.2 eV. Features were observed in the PL excitation spectra near the lithium and boron K-absorption edges originating from excitation of the cation 1s core excitons. Experimental evidence of the multiplication of Li 1s excitons in LBO was obtained. It is shown that excitation of the O 1s core excitons does not affect the PL yield noticeably. The differences in the appearance of the Li, B, and O 1s excitons in the excitation spectra of the LBO ultraviolet PL are discussed. 相似文献
18.
S.S. Yi J.S. Bae B.K. Moon J.H. Jeong I.W. Kim H.L. Park 《Applied Physics A: Materials Science & Processing》2003,76(3):433-437
ZnGa2O4 thin-film phosphors have been grown on Si(100), Al2O3(0001) and MgO(100) substrates using pulsed laser deposition. The structural characterization was carried out on a series
of ZnGa2O4 films grown on various substrates under various substrate temperatures and oxygen pressures. The films grown on these substrates
not only have different crystallinity and surface morphology, but also different Zn/Ga composition ratio. The crystallinity
and photoluminescence (PL) of the ZnGa2O4 films are highly dependent on the deposition conditions, in particular the stoichiometry ratio of Zn/Ga and the kind of substrate.
The variation of Zn/Ga in the films also depends on not only the oxygen pressure but also the substrate temperature during
deposition. The PL properties of pulsed laser deposited ZnGa2O4 thin films have indicated that Al2O3(0001) and MgO(100) are promising substrates for the growth of high-quality ZnGa2O4 thin films and that the luminescence brightness depends on the substrate. The luminescence spectra show a broad band extending
from 350 to 600 nm and peaking at 460 nm.
Received: 11 July 2002 / Accepted: 31 July 2002 / Published online: 28 October 2002
RID="*"
ID="*"Corresponding author. Fax: +82-51-6206356, E-mail: jhjeong@pknu.ac.kr 相似文献
19.
采用电沉积法获得了接近化学计量比的贫铜和富铜的Cu(In1-xGax)Se2(CIGS)预置层,研究比较了两种预置层及其硒化处理后的成分和结构特性.得到了明确的实验证据证明,硒化后富铜薄膜中的CuxSe相会聚集凝结成结晶颗粒分散在表面.研究表明:在固态源硒化处理后,薄膜成分基本不变;当预置层中原子比Cu/(In+Ga)<11时,硒化后薄膜表面存在大量的裂纹;而当Cu/(In+Ga) >12时,可以消除裂纹的产生,形成等轴状小晶粒;富铜预置层硒化时蒸发沉积少量In,Ga和Se后,电池效率已达到68%;而贫铜预置层硒化后直接制备的电池效率大于2%,值得进一步深入研究.
关键词:
1-xGax)Se2薄膜')" href="#">Cu(In1-xGax)Se2薄膜
电沉积
硒化处理
贫铜或富铜薄膜 相似文献
20.
High‐quality Inx Al1–xN (0.71 ≤ xIn ≤ 1.00) nanocolumns (NCs) have been grown on Si(111) substrates by rf‐plasma‐assisted molecular‐beam epitaxy (rf‐MBE). Low‐temperature photoluminescence (LT‐PL) spectra of various In‐rich InAlN NCs were measured at 4 K and single peak PL emissions were observed in the wavelength region from 0.89 µm to 1.79 µm. Temperature‐dependent PL spectra of In0.92Al0.08N NCs were studied and the so‐called “S‐shape” (decrease–increase–decrease) PL peak energy shift was observed with increasing temperature. This shift indicates the carrier localization induced by the In segregation effect and is different from the anomalous blue shift frequently observed in InN films and nanowires with high residual carrier concentra‐ tions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献