Phase separation and crystallization in the system SiO2-Al2O3-P2O5-B2O3-Na2O glasses

The phase separation and crystallization behavior in the system (80 − X)SiO₂ · X(Al₂O₃ + P₂O₅) · 5B₂O₃ · 15Na₂O (mol%) glasses was investigated. Glasses with X = 20 and 30 phase separated into two phases, one of which is rich in Al₂O₃-P₂O₅-SiO₂ and forms a continuous phase. Glasses containing a larger amount of Al₂O₃-P₂O₅ (X = 40 and 50) readily crystallize and precipitates tridymite type AlPO₄ crystals. It is estimated that the phase separation occurs forming continuous Al₂O₃-P₂O₅-SiO₂ phase at first, and then tridymite type AlPO₄ crystals precipitate and grow in this phase. Highly transparent glass-ceramics comparable to glass can be successfully obtained by controlling heat treatment precisely. The crystal size and percent crystallinity of these transparent glass-ceramics are 20-30 nm and about 50%, respectively.     

Solubility of Ag2O into the Na2O–B2O3–Al2O3 system

The solubility of Ag₂O was measured for the Na₂O–B₂O₃ and Na₂O–B₂O₃–Al₂O₃ system with the rotating crucible method and static method, respectively, under air atmosphere at temperatures ranging from 1273 to 1423 K. The contamination of melts from crucibles could be avoided by the rotating crucible method, with which it became possible to measure the solubility of Ag₂O for the Na₂O–B₂O₃ system above the melting point of Ag for the first time. It was found that the addition of Na₂O decreases the solubility of Ag₂O while the addition of Al₂O₃ had little effect on the solubility. The effect of Na₂O and Al₂O₃ on the solubility of Ag₂O is expressed by interaction coefficients and is analyzed in terms of the basicity of melts. The solubility of Ag₂O in Na₂O–B₂O₃–Al₂O₃ melts increased with increased temperature. This phenomena was explained by a small enthalpy change in oxidation of silver.     

Thermodynamic analysis of the W-Al2O3 system near the melting temperature of Al2O3. I. Evolution of the system in the pressure range of 1 × 10−1−1 × 10−4 bar

The changes in the main chemical reactions occurring upon the interaction between tungsten and the evaporation products of Al₂O₃ melt are considered at a fixed temperature (2400 K). The concentrations of the components coexisting in equilibrium in a closed system under isobaric-isothermal conditions are determined by stochastic simulation for low (× 10⁻¹−1 × 10⁻³ bar) and high (1 × 10⁻⁴ bar) vacuum. It is shown that the gas-liquid-solid system is in heterogeneous equilibrium for the basic component ratio W: Al₂O₃ = 1: 1 in the entire pressure range under consideration. A detailed study of the chemistry of this system should facilitate the choice of the optimal conditions for growing leucosapphire crystals from melt.     

Effect of Al2O3 on phase separation of SiO2-Nd2O3 glasses

The immiscibility boundary and the critical point of SiO₂-Nd₂O₃ system glass were determined as a function of Al₂O₃ addition. The critical temperature of the immiscibility boundary was observed to decrease with the addition of Al₂O₃. Using the regular solution model, the observed decrease of the immiscibility boundary was directly related to the decrease of the concentration fluctuation of Nd₂O₃ in SiO₂. It is concluded that the Al₂O₃ addition to Nd₂O₃ containing silica glass is beneficial in decreasing the concentration quenching effect, deterioration of the optical efficiency due to clustering of rare earth element, because Al₂O₃ addition diminishes the concentration fluctuation of Nd₂O₃ in silica glass.     

Chemical processes and composition of the gas and solid phases in the Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-Mo system in the temperature range 2327–2500 K

The possibility of chemical reactions has been calculated and the composition of the gas and solid phases that are in equilibrium with an aluminum oxide melt is determined. It is shown that, for the Al₂O₃-Mo system in the pressure range 1?1 × 10^?5 bar, evaporation of Al₂O₃ is incongruent, and the fraction of this component in the gas phase decreases from 51.5 mol % (P = 1 bar) to 0.01 mol % (P = 1 × 10^?5 bar). The presence of molybdenum-containing compounds in the gas phase changes the balance of oxygen and aluminum in favor of the latter (the aluminum partial pressure increases by a factor of 1.5–3), as a result of which there may be an aluminum deficit in the solid phase of Al₂O₃ during crystal growth from a melt. The thermodynamic characteristics (K _p , ΔG, P _tot) of dominant chemical reactions have been calculated for the temperature range 2327–2500 K. Understanding of the chemical processes makes it possible to optimize the growth parameters of leucosapphire single crystals.     

Electrical properties of Al2O3 film deposited at low temperatures

Amorphous Al₂O₃ films were deposited on p-Si by rf magnetron sputtering to investigate their potential as a gate dielectric in organic thin film transistors (OTFTs). The deposition was performed at room temperature, 200 and 300 °C using Al₂O₃ and Al targets. Achieved Al₂O₃ films have higher capacitance values than thermally grown SiO₂ as characterized by capacitance-voltage measurements. It is also found from current-voltage and roughness measurements that the leakage current and the surface roughness can be least when the films are deposited at room temperature. The capacitance of the film obtained from the Al₂O₃ target appears higher than that of the Al₂O₃ film from the Al target while the results of electrical breakdown are opposite. These room temperature processes are promising for applications to the gate dielectrics of organic TFTs.     

Structure and thermal stability of (Zr0.6Al0.4)O1.8 thin film on strained SiGe layer

Zr_0.6Al_0.4O_1.8 dielectric films were deposited directly on strained SiGe substrates at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N₂ under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr_0.6Al_0.4O_1.8 film is about 900 °C, 400 °C higher than that of pure ZrO₂. The amorphous Zr_0.6Al_0.4O_1.8 film with a physical thickness of ∼12 nm and an amorphous interfacial layer (IL) with a physical thickness of ∼3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800 °C in the Zr_0.6Al_0.4O_1.8 film. The chemical composition of the Zr_0.6Al_0.4O_1.8 film has been studied using secondary ion mass spectroscopy (SIMS).     

Peculiarities of the behavior of the W–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> system in a controlled reducing atmosphere

The W–Al₂O₃ system at T = 2400 K and standard pressure (controlled Ar + H₂ atmosphere) has been calculated by stochastic simulation. It is shown that the presence of hydrogen leads to the formation of aluminum hydrides, hydrogen oxides, and aluminum hydroxides; the compounds from the two latter groups (except for water) can interact directly with tungsten. The main chemical reactions occurring in the system are determined, based on which a conclusion about the cyclic character of the processes is drawn. Some recommendations on the composition and pressure of controlled atmosphere for growing sapphire crystals are given.     

Some Aspects of Interactions in the Mo–W–Al2O3–H2 System: Formation of Polyoxides

The possibility of formation of molybdenum and tungsten polyoxides in the Mo–W–Al₂O₃–H₂ system at T = 2400 K and P = 1 bar in a controlled Ar + H₂ atmosphere has been investigated by the method of thermodynamic analysis. The formation of polyoxides is found to occur both due to the processes involving Al₂O₃ melt and in the absence of the latter. It is established that metals (Mo and W) and their mono-, di-, and even trioxides (in the latter case, mediated polymerization occurs) can be used as initial components to form polyoxides. It is shown that polyoxides themselves may interact with one of their main sources: Al₂O₃ melt.

     

Y2O3-Al2O3-Nd2O3 phase diagram and the growth of (Y,Nd)3 Al5O12 single crystals

The optimum compositions of the melts used for the growth of yttrium-aluminum garnet (YAG) single crystals with different neodymium contents are determined using the phase diagram of the ternary system Y₂O₃-Al₂O₃-Nd₂O₃ with the binary sections Y₃Al₅O₁₂-Nd₂O₃ and Y₃Al₅O₁₂-Nd₃Al₅O₁₂. A number of melt compositions characterized by one garnet phase, namely, (Y,Nd)₃Al₅O₁₂, are established. Single crystals of yttrium-aluminum garnets with a high content of the activator (up to 2.6 wt % Nd) are grown by the Czochralski method. __________ Translated from Kristallografiya, Vol. 48, No. 5, 2003, pp. 945–949. Original Russian Text Copyright ? 2003 by Soboleva, Chirkin. Dedicated to the 60th Anniversary of the Shubnikov Institute of Crystallography of the Russian Academy of Sciences     

Quenched glasses in the systems of Li2O with Al2O3, Ga2O3 and Bi2O3

By rapid quenching in a twin roller apparatus, glass was found to occur widely in the systems of Li₂O with Al₂O₃, Ga₂O₃, Bi₂O₃ and in mixed systems. Examination of the resulting flakes by X-ray powder diffraction, differential thermal analysis, and capacitance data revealed the occurrence of glass, glass transitions, crystallization exotherms and the nature of some of the crystallization paths.The log ionic conductivity of the glasses was found to follow a linear relationship with the Li concentration. Evidence was observed for three new metastable crystalline phases, one in the Li₂OAl₂O₃ system and two in the Li₂OBi₂O₃ system. The latter system also showed evidence for the occurrence of two glasses at almost all compositions.     

Mechanisms of Interaction of Molybdenum and Tungsten Polyoxide with Aluminum Oxide Melt under Reducing Conditions

The main chemical reactions between Mo and W polyoxides and Al₂O₃ melt in a controlled Ar + H₂ atmosphere (T = 2400 K, P = 1 bar) during sapphire growth by horizontal directional solidification have been investigated. Under these thermodynamic conditions, the melt and products of its dissociative evaporation may actively react with the tungsten heater and molybdenum thermal screens of the crystallization system. It is shown that the polyoxides formed during evaporation do not directly interact with the melt; this interaction occurs only with participation of reagents exhibiting pronounced reducing properties (Al, H₂, H, WO, Al₂O, AlH, AlH₂, AlH₃). It is established that most of processes occur with participation of aluminum hydrides. A particular role of Mo(W) dioxide–W(Mo) polyoxide functional pairs in the interaction with the melt is determined.

     

Thermodynamic modeling of the Al2O3–B2O3–SiO2 system

A complete literature review, critical evaluation, and thermodynamic modeling of the phase diagrams and thermodynamic properties of all oxide phases in the ternary Al₂O₃–B₂O₃–SiO₂ system at 1 bar pressure are presented. The molten oxide phase is described by the Modified Quasichemical Model and the Gibbs energy of the mullite solid solution is modeled using the Compound Energy Formalism. A set of optimized internally consistent thermodynamic functions for all the phases is presented. With the thermodynamic dataset, all available and reliable thermodynamic and phase equilibrium data can be reproduced within experimental error limits from 25 °C to above the liquidus temperatures. In addition, the reasonable predictions obtained for phase relations in the experimentally unexplored composition ranges suggest that the thermodynamic database can be used along with appropriate Gibbs energy minimization routines to calculate thermodynamic properties, phase equilibria, and phase diagrams of interest.     

Phase equilibria in the Ba2Na3[B3O6]2F-BaF2 system

The phase equilibria in the Ba₂Na₃[B₃O₆]₂F-BaF₂ section, which belongs to the ternary mutual Ba, Na//BO₂,F system, have been studied by the methods of solid-phase synthesis, visual polythermal analysis, and differential-thermal analyses. It is shown that this section can be used to grow bulk Ba₂Na₃[B₃O₆]₂F crystals.     

Characterisation of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

Al₂O₃ and ZrO₂ mixtures for gate dielectrics have been investigated as replacements for silicon dioxide aiming to reduce the gate leakage current and reliability in future CMOS devices. Al₂O₃ and ZrO₂ films were deposited by atomic layer chemical vapor deposition (ALCVD) on HF dipped silicon wafers. The growth behavior has been characterized structurally and electrically. ALCVD growth of ZrO₂ on a hydrogen terminated silicon surface yields films with deteriorated electrical properties due to the uncontrolled formation of interfacial oxide while decent interfaces are obtained in the case of Al₂O₃. Another concern with respect to reliability aspects is the relatively low crystallization temperature of amorphous high-k materials deposited by ALCVD. In order to maintain the amorphous structure at high temperatures needed for dopant activation in the source drain regions of CMOS devices, binary Al/Zr compounds and laminated stacks of thin Al₂O₃ and ZrO₂ films were deposited. X-ray diffraction and transmission electron microscope analysis show that the crystallization temperature can be increased dramatically by using a mixed oxide approach. Electrical characterization shows orders of leakage current reduction at 1.1-1.7 nm of equivalent oxide thickness. The permittivity of the deposited films is determined by combining quantum mechanically corrected capacitance voltage measurements with structural analysis by transmission electron microscope, X-ray reflectivity, Rutherford backscattering, X-ray photoelectron spectroscopy, and inductively coupled plasma optical emission spectroscopy. The k-values are discussed with respect to formation of interfacial oxide and possible silicate formation.     

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.     

Supercritical fluctuations in the B2O3PbOAl2O3 system

A small-angle X-ray diffraction study of the supercritical region of the B₂O₃PbOAl₂O₃ immiscibility surface is presented. This is the first time that diffraction methods have been applied to the study of critical opalescence in a system of oxides at high temperatures. Debye's theory is shown to be applicable and, from the spectra correlation lengths and the range of molecular interactions l is calculated. The topography of the supercritical region is determined and the relationship between l and the main interatomic distances in the melt discussed.     

Refractive index-structure correlations in Na2O-Al2O3-SiO2 glasses

The current structural models have been used to analyse the refractive index data of Na₂O-Al₂O₃-SiO₂ glasses (Al₂O₃/Na₂O?1). The SiO₂ content is the sole factor that controls the refractive index. Values could be obtained for the factors with which each structural unit contributes in the refractive index. The content of Al₂O₃ or Na₂O has no effect on the refractive index. The factors (differential refraction) are constant and do not change with composition. They have the same values for Na₂O-SiO₂ glasses. The differential refraction of a structural unit increases linearly with increasing the number of non-bridging oxygen ions. The difference of the contribution to the refractive index from a silicate unit to the next equals to a half of that for AlO₄ tetrahedron. The effect could be attributed to the change in both the concentration and differential refraction of structural units. The obtained factors for the structural units are useful in calculating the refractive index with a high degree of accuracy.     

Chemical Processes in Al2O3-Mo and Al2O3-W systems in a weakly reducing atmosphere

Al₂O₃-Mo and Al₂O₃-W systems in a controlled Ar(95%) + H₂(5%) atmosphere at T = 2400 K and P = 1 bar have been calculated by the Monte Carlo method. It is established that the presence of hydrogen in these systems leads to the occurrence of OH, H₂O₂, HO₂, H₂O, AlOH, AlOOH, AlH, AlH₂, and AlH₃ components in the gas phase; aluminum hydrides are formed only through the interaction of hydrogen with melt evaporation products. The presence of reducing medium leads to a decrease in the free oxygen concentration by one to two orders of magnitude, which is expected to improve the quality of sapphire crystals.     

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Thin Al₂O₃ layers were grown by atomic layer deposition using trimethylaluminum (TMA) and water as precursors on 1.2 nm thermal SiO₂ and HF cleaned Si surfaces. The stoichiometry and the contamination (H, OH and C) of as-deposited and N₂ annealed thick Al₂O₃ layers were characterized by secondary ion mass spectrometry (SIMS), elastic recoil detection analysis (ERDA) and X-ray photoelectron spectroscopy (XPS). We show a perturbed region (≈5 nm thick) at the Al₂O₃/Si interface by XPS and Auger electron spectrometry (AES). Post-deposition annealings induced important interface oxidation, Si atoms injection and SiO₂/Al₂O₃ mixture whereas the initial interface was abrupt. Silicon oxidation before Al₂O₃ growth highly limits interfacial oxidation and improves interfacial quality. We proposed that OH groups may play a key role to explain silicon oxidation during post-deposition annealings in inert ambience with low oxygen contamination levels.