Top-seeded solution growth of LiB3O5

We report on the top-seeded solution growth of LiB₃O₅ from an excess B₂O₃ solution. Parameters investigated include the Li₂O/B₂O₃ ratio, rotation rate, pulling rate, cooling rate, and seed direction. With careful control of the above parameters, we have grown clear crystals of 25 × 30 × 20 mm in size. Selected nonlinear optical properties of these crystals are reported. Observations concerning the occurrence of unstable growth (inclusions, hopper growth) are discussed, and methods to eliminate the unstable growth are suggested.     

Growth of Tb3Ga5O12 fiber and bulk crystals using micro-pulling-down apparatus

A micro-pulling-down process, using Ir crucibles and RF heating, has been used to grow single-crystal fiber and bulk crystals of Tb₃Ga₅O₁₂ garnet (TGG). Single crystals ranging up to 450 mm in length have been produced. The crystals were 1–4 mm in diameter and were seeded-grown in the direction close to 1 1 1. The maximal crystal diameter achieved was 10 mm. Dependence of behavior of the solid–liquid interface on the growth parameters (temperature and pulling-rate) is discussed in detail.     

Single-crystal growth of sulphospinel CuIr2S4 from Bi solution

Single crystals of a sulphospinel CuIr₂S₄ have been grown from bismuth solution by a slow cooling method for the first time. The grown crystals have a maximum edge of about 1 mm in size and a mirror-like shining surface. Optimum growth conditions are fairly strict. The specific weight of starting materials for the crystal growth is found to be 0.30 g of CuIr₂S₄ and 10.0 g of Bi in order to obtain good quality crystals. The starting and finishing temperatures for the slow cooling step in the temperature control are 1000 and 500°C. The pertinent cooling rate is 2°C/h. Since the volume of bismuth itself expands in the transition from liquid phase to solid phase, a simple method of separation of the grown crystals from the liquid solution will be proposed for avoiding the mechanical damages to the grown crystals. The single crystals have the normal-spinel structure of the lattice constant a=9.849 Å at room temperature. A step-like anomaly in the susceptibility of the single crystals, corresponding to the metal–insulator transition in the resistivity, occurs much sharply than in the powder specimen.     

Growth by self-flux method and post-annealing effect of Bi2Sr2Ca1Cu2Ox single crystals

Post-annealing effects on superconducting characteristics have been studied in Bi₂Sr₂Ca₁Cu₂O_x single crystals grown by a conventional flux method. Also, favorable growth conditions and the effect of the pre-sintering process on the starting materials for flux growth have been examined. The best superconducting behavior is obtained in post-annealed crystals grown from pre-sintered powder materials. The critical current density J_c estimated from magnetization hysteresis in annealed crystals grown with pre-sintered materials is roughly 8×10⁵ A/cm² (Hc) and 5×10⁴ A/cm² (Hc) at 4.2 K at zero field.     

Mössbauer studies on some glasses and crystals in the Na2O---Fe2O3---SiO2 system

Mössbauer absorption measurements have been made at room temperature on ⁵⁷Fe in iron sodium silicate glasses containing 3–15 mol% Fe₂O₃ and various iron alkali silicate crystals in order to study the state of iron in these glasses. The spectra of all the glasses gave one doublet with a quadrupole splitting varying from 0.73–0.78 mm s⁻¹, while those of Na₂O · Fe₂O₃ · 4 SiO₂ and 5 Na₂O · Fe₂O₃ · 8 SiO₂ crystals showed much smaller quadrupole splitting, 0.28 mm s⁻¹ and 0.10 mm s⁻¹, respectively, and an asymmetrical doublet of much narrower linewidth. When sodium was replaced by other alkali metals of larger size, such as K and Cs, in MFeSi₂O₆ and MFeSi₃O₈ crystals, the quadrupole splitting became wider and approached to 0.73 mm s⁻¹. Such a variation was not observed for glasses. These results suggest that a larger number of non-identical sites exist in iron sodium silicate glasses than in the corresponding crystals.     

A new technique for the growth of superconducting YBa2Cu3O6 + δ crystals completely separated from flux

Growth of completely flux-separated YBa₂Cu₃O_{6 + δ} (referred to as 123 phase) crystals using a novel technique is described. The technique employs a modification of the seed pulling method commonly used in crystal growth. The crystals are grown in the temperature range of 960–1000°C using a BaCuO₂ flux. A 123 flux ratio of 1:5 is maintained. Photographs of the crystals and photomicrograph of the surfaces are presented to show complete flux-separation of the crystals measuring 6 mm × 3 mm × 1 mm. The Raman spectra recorded on the as-grown crystals show that they are in the tetragonal phase. Magnetic susceptibility measurements on crystals annealed in an oxygen atmosphere show a superconducting transition starting at 71 K. The present technique offers a possibility of growing large, completely flux-separated crystals of 123 for superconductivity research.     

Growth and characterization of ferromagnetic shape memory alloy Co50Ni20FeGa29 single crystals

Single crystals of Co₅₀Ni₂₀FeGa₂₉ with B2 phase have been obtained in a deep supercooling condition. The interface-facets and the segregation effect lead to the formation of ordered defects that store a directional internal stress. These defects give to a large energy barrier that leads to a very sharp martensitic transformation within a temperature window of only 2 K. The single crystals show good shape memory effect and superelasticity, which are anisotropic between the growth direction [0 0 1] and its equivalent direction [0 1 0]. The anisotropic behaviors are attributed to the directional internal stress caused by the ordered defects.     

Two-level growth of potassium niobate KNbO3 single crystals: a new growth method for ABO3-type materials

Based on our recent study on the directional growth of KNbO₃ single crystals, a new growth scheme called the two-level growth (TLG) has been developed. By using the TLG method, high quality transparent KNbO₃ single crystals can be prepared with high reproducibility. The technique includes two growth stages. In level-one growth, a dimensionally defined (shaped) KNbO₃ seed with high crystal perfection is fabricated. The target crystal with desired dimensions and an architectural structure can be obtained in the second level of the growth. A process flow chart for the TLG method has been presented and six representative types of the growths have been introduced. Generally, crystals grown by TLG have much less crystal imperfections than those obtained from the conventional way. Technological merits of the TLG scheme have been studied, indicating that this growth scheme can also be employed to other oxide perovskite ABO₃ single crystal growths.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis, growth and characterization of a new laser upconversion crystal Ba2ErCl7

A modified method to synthesize the new laser upconversion material Ba₂ErCl₇ using Er₂O₃, BaCl₂ 2H₂O and NH₄CI is reported for the first time in this paper. Single crystals up to 5–8mm in diameter and 10–20 mm in length have been grown by Czochralski method. The transmittance spectra of Ba₂ErCl₇ single crystal has first been measured by using an HITACHI U-3500 spectrophotometer. There are three intense absorption peaks ⁴I_9/2⁴I_11/2 and ⁴I_13/2 in the infrared range which can be excited by 803nm, 980nm and 1.5μm laser diodes (LDs), respectively. The cut-off wavelength of the crystal is 230mn. Intense green luminescence can be observed when the crystal is pumped by a ED at 803nm. The formation of the defects is also discussed.     

The crystallisation of the yttrium–sialon glass: Y15.2Si14.7Al8.7O54.1N7.4

The development of microstructure during crystallisation of a glass with composition Y_15.2Si_14.7Al_8.7O_54.1N_7.4 has been studied by analytical and high resolution transmission electron microscopy. Crystal nucleation at temperatures in the range 965–1050°C occurs by the heterogeneous nucleation of lenticular-shaped yttrium, silicon and aluminium containing crystals on silicon-rich clusters that formed during glass preparation. The lenticular crystals have a wide range of composition after heat treatment at 1050°C; the yttrium cation percentage varies around that of the expected B-phase composition Y₂SiAlO₅N but the aluminium content is lower and the silicon content generally significantly higher than that. The crystals display the hexagonal crystal structure of B-phase, although the results from EDX analysis imply that the atomic arrangement of the lattice is not the previously proposed B-phase structure. Crystal growth during prolonged heat treatment at 1050°C occurs to a significant extent by coalescence.     

Phase diagram of the SrS–Ga2S3 system and its application to the single-crystal growth of SrGa2S4

Ce-doped SrGa₂S₄ compound is expected as a new host material of blue EL devices. However, the basic properties of bulk single crystals have not been fully clarified, since this compound has been mostly synthesized in the form of polycrystals or thin films. Here, we firstly present the pseudo-binary phase diagram of the SrS–Ga₂S₃ system constructed in accordance with our DTA data for single-crystal growth of SrGa₂S₄. It is shown that SrGa₂S₄ compound has a congruent melting point and a eutectic reaction in the side of excess of Ga₂S₃ concentration. On the basis of the phase diagram, single crystals of SrGa₂S₄ are grown using Ga₂S₃ as a self-flux in a horizontal Bridgman furnace. Colorless and transparent crystals having a typical size 2×2×2 mm³ are obtained.     

Ambient-condition growth of superconducting YBa2Cu4O8 single crystals using KOH flux

YBa₂Cu₄O₈ is a stoichiometric oxide superconductor of T_c80 K. Unlike YBa₂Cu₃O_7−δ, this compound is free from oxygen vacancy or twin formation and does not have any microscopic disorder in the crystal. Doping with Ca raises its T_c to 90 K. The compound is a promising superconductor for technological application. Up to now, single crystals have not been grown without using specialized apparatus with extremely high oxygen pressure up to 3000 bar and at over 1100 °C due to the limited range of reaction kinetics of the compound. This fact has delayed the progress in the study of its physical properties and potential applications. We present here a simple growth method using KOH as flux that acts effectively for obtaining high-quality single crystals in air/oxygen at the temperature as low as 550 °C. As-grown crystals can readily be separated from the flux and exhibit a perfect orthorhombic morphology with sizes up to 0.7×0.4×0.2 mm³. Our results are reproducible and suggest that the crystals can be grown using a conventional flux method under ambient condition.     

Growth and luminescence mechanisms of Ba2ErCl7: a new laser up-conversion crystal

A modified synthesis method for the preparation of Ba₂ErCl₇, a new laser up-conversion material using Er₂O₃, BaCl₂·2H₂O and NH₄Cl, is reported for the first time. Single crystals 5–8 mm in diameter and 10–20 mm in length were grown by both the Czochralski and Bridgman methods. The transmittance spectra for a Ba₂ErCl₇ single crystal was first measured using a HITACHI U-3500 spectrophotometer. There were three intense absorption peaks ⁴I_9/2, ⁴I_11/2 and ⁴I_13/2 in the infrared range which can be excited by 803 and 980 nm and 1.5 μm laser diode (LD), respectively. The cut-off wavelength of the crystal was 230 nm. Intense green luminescence was observed when the crystals were pumped by an 803 nm LD. Up-conversion mechanisms are discussed.     

Crystal growth of Na(V,Ti)2O5

Large single crystals of quasi-one-dimensional antiferromagnetic spin system NaV_2−zTi_zO₅ (0z0.06) have been successfully grown by a flux method. We present growth conditions together with a characterization of the single crystals by means of X-ray powder diffraction, energy dispersive X-ray (EDX) analysis and magnetic susceptibility measurements.     

Flux growth of BPO4 crystals

Single crystals of BPO₄ with sizes up to 15×10×12 mm³ were grown by top-seeded solution growth method using Li₂O–Li₄P₂O₇ as fluxes. The components volatilized from the melt were characterized by the method of X-ray powder diffraction. The defects of grown crystals have also been investigated. The measured ultraviolet cutoff edge of BPO₄ was about 130 nm. Its density was 2.82 g/cm³ determined using drainage method.     

Bridgman growth and properties of potassium lithium niobate single crystals

Transparent KLN crystals 10mm in diameter and 25 to 45mm in length have been grown by the modified vertical Bridgman technique from different melts in the range of 3035mol% K₂O, 1723mol% Li₂O and 4350mol% Nb₂O₅. The growth conditions are a growth rate of less than 0.25 mm/hr, temperature gradient in solid-liquid interface of 23 °C/mm and growth direction of <110>. As-grown KLN crystals have tetragonal tungsten bronze structure. Most of the as-grown crystals do not crack when cooling through the paraelectric/ferroelectric phase transition. 180° domain structures are observed after the KLN crystal was etched in boiling 2HNO₃:Hf. Dielectric properties and transmission spectrum of the as-grown KLN crystals are measured.     

Crystal growth of Ce: PrF3 by micro-pulling-down method

Micro-pulling-down (μ-PD) growth apparatus was modified for fluoride crystals. PrF₃ was grown with various concentrations of Ce³⁺ from 0–100%. The crystals were transparent and colorless (CeF₃) or greenish and 3 mm in diameter and 15–50 mm in length. Neither visible inclusions nor cracks were observed. Radioluminescence spectra and decay kinetics were measured for the sample set at room temperature. In comparison to the Czochralski or Bridgman method, the μ-PD method allows to produce single crystalline material in a faster thus more economic way. Once it is established for the fluoride crystals, it is an efficient tool for exploring the field of new functional fluorides.     

Growth and spectroscopic properties of Er single doped and Er–Yb co-doped YAl3(BO3)4 crystals

Er³⁺-doped and Er³⁺–Yb³⁺ co-doped yttrium aluminum borate (YAB) single crystals have been grown by the top-seeded solution growth method using a new flux system, namely NaF–MoO₃–B₂O₃. The Er³⁺ concentrations were 1.3 mol% for both single doped and co-doped crystals and the Yb³⁺ concentration in the Er³⁺–Yb³⁺ co-doped crystal was 20.0 mol% in the raw materials. The distribution coefficients of Er³⁺ single doped and Er³⁺–Yb³⁺ co-doped crystals were measured. The polarized absorption and fluorescence spectra of Er³⁺–Yb³⁺ co-doped crystal were recorded and compared with those of Er³⁺ single doped crystal. The results demonstrate that Er³⁺–Yb³⁺ co-doped YAB crystal is a potential candidate for 1.55 μm laser materials.     

Large-size β-Ga2O3 single crystals and wafers

Large-size single crystals of β-Ga₂O₃ with 1 inc in diameter have been grown by the floating zone technique. The stable growth conditions have been determined by the examination of the crystal structure. Wafers have been cut and fine polished in the (1 0 0), (0 1 0) and (0 0 1) planes. These were highly transparent in the visible and near UV, as well as electrically conductive, indicating the potential use of β-Ga₂O₃ as a substrate for optoelectic devices operating in the visible/near UV and with vertical current flow.