Electron diffraction study of various lattice defects in a Bi<Subscript>4</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript> crystal

Lattice defects in a scintillation detector made of Bi₄Ge₃O₁₂ (BGO) could severely impact detector efficiency via non-radiative transfer of electron excitation, thus making thorough investigations of these defects highly important. Here we present a combined experimental and theoretical study of two- and three-dimensional defects in a Czochralski-grown BGO crystal. Upon examination by transmission electron microscopy the selected-area electron diffraction (SAED) patterns in two neighboring parts of the specimen reveal different kinds of two- and three-dimensional defects. Three sub-grains misoriented at 2.47° with reference to each other and probable presence of stacking faults lying in {011} planes were observed in the first examined local area. The SAED image taken from an area in the close neighborhood is much more complicated and is explained in terms of the superposition of reflections from: (i) a partially textured GeO₂ second-phase inclusion; (ii) the basic lattice of BGO and (iii) a superlattice-like structure based on the BGO lattice. The atomic structure of such a superlattice-like structure was theoretically modeled and the corresponding simulated SAED patterns were found to be in good agreement with the experimentally observed one.     

Efficient continuous-wave YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript> Raman laser at 1176 nm

We present a simple and compact continuous-wave (CW) 1176 nm laser based on self-frequency Raman conversion in continuous-grown YVO₄/Nd:YVO₄ composite crystal. With a composite crystal 30 mm in length, a maximum output power up to 1.84 W was achieved at the incident diode pump power of 23.6 W. Corresponding to overall optical conversion, the efficiency was 7.8% and the slope efficiency was 8.5%. The conversion efficiency has been doubled compared with the conventional Nd:YVO₄ CW self-frequency Raman laser. The excellent performance of this laser shows that the long continuous-grown YVO₄/Nd:YVO₄ composite crystal is promising in the application of CW Raman lasers and ideal for miniaturization.     

Orientation dependence of electrical properties of 0.96Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-0.04BaTiO<Subscript>3</Subscript> lead-free piezoelectric single crystal

In this paper, a single crystal of 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ with dimensions of Φ 30×10 mm was grown by the top-seeded-solution growth method. X-ray powder diffraction results show that the as-grown crystal possesses the rhombohedral perovskite-type structure. The dielectric, piezoelectric and electrical conductivity properties were systematically investigated with 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples. The room-temperature dielectric constants for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples are found to be 650, 740 and 400 at 1 kHz. The (T _m, ε _m) values of the dielectric temperature spectra are almost independent of the crystal orientations; they are (306°C, 3718), (305°C, 3613) and (307°C, 3600) at 1 kHz for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal. The optimum poling conditions were obtained by investigating the piezoelectric constants d ₃₃ as a function of poling temperature and poling electric field. For the 〈001〉 and 〈110〉 crystal samples, the maximum d ₃₃ values of 146 and 117 pC/N are obtained when a poling electric field of 3.5 kV/mm and a poling temperature of 80°C were applied during the poling process. The as-grown 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ crystal possesses a relatively large dc electrical conductivity, especially at higher temperature, having a value of 1.98×10⁻¹¹ Ω⁻¹⋅m⁻¹ and 3.95×10⁻⁹ Ω⁻¹⋅m⁻¹ at 25°C and 150°C for the 〈001〉 oriented crystal sample.     

Effect of annealing temperature on microstructures and optical properties of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> films

Evolution of microstructure and optical property with annealing temperature has been examined for Ba_0.9Sr_0.1TiO₃ films derived from one single precursor solution containing polyethylene glycol polymer. The films sintered below 750°C exhibit a uniform phase structure across the cross-sections and an ordinary optical thin film feature, while the Ba_0.9Sr_0.1TiO₃ films crystallized at 750°C or higher temperature render a lamellar texture consisting of dense and porous Ba_0.9Sr_0.1TiO₃ layers and a good performance as a one-dimensional photonic crystal. The discrepancy in cross-sectional morphology and reflectance property observed in these Ba_0.9Sr_0.1TiO₃ films has been preliminarily explained.     

12.95 mW sixth harmonic generation with KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystal

We obtained the second harmonic of a frequency-tripled Nd:YVO₄ laser at wavelength of 177.3 nm with 12.95 mW output by using an optically contacted KBe₂BO₃F₂-CaF₂ prism-coupled device with a 2.1 mm thick KBe₂BO₃F₂ crystal, which is to our knowledge the best result at this wavelength. PACS 42.65.Ky; 42.70.Mp; 42.55.Xi     

Electronic excitation energies in TiO<Subscript>2</Subscript> in the fluorite phase

The ab initio pseudopotential method within the generalized gradient approximation (GGA) and quasiparticle approximation has been used to investigate the electronic properties of titanium dioxide in the rutile, anatase, and fluorite structures, respectively. Here we present the GW approximation for the electronic self-energy, which allows to calculate excited-state properties, especially electronic band structures. For this calculation, good agreement with the experimental results for the minimum band gaps in rutile and anatase phase is obtained. In the fluorite phase we predict that titanium dioxide will be an indirect (Γ to X) wide band-gap semiconductor (2.367 or 2.369 eV) and the properties remain to be confirmed by experiment.     

Continuous-wave intracavity Raman laser at 1179.5 nm with SrWO<Subscript>4</Subscript> Raman crystal in diode-end-pumped Nd:YVO<Subscript>4</Subscript> laser

We report a continuous-wave intracavity Raman laser at 1179.5 nm with a SrWO₄ Raman crystal in a diode-end-pumped Nd:YVO₄ laser. The highest output power of 2.23 W is obtained at the laser diode power of 21.2 W corresponding to the slope efficiency of 17.3% and a diode-to-stokes optical conversion efficiency of 10.5%. The dependence of the Raman laser performance on the pump polarization is also studied. The measured Raman thresholds are about 9.3 and 8.3 W in the diode pump laser power for the a- and b-polarized configurations, respectively. The Raman gain coefficients of the c-cut SrWO₄ crystal for a- and b-polarized pumps are estimated to be about 4.9 and 4.7 cm/GW, respectively.     

Temperature dependence of thermal properties of Ag<Subscript>8</Subscript>In<Subscript>14</Subscript>Sb<Subscript>55</Subscript>Te<Subscript>23</Subscript> phase-change memory materials

The dependence of thermal properties of Ag₈In₁₄Sb₅₅Te₂₃ phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm²/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm²/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm²/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag₈In₁₄Sb₅₅Te₂₃ are more thermally active than Ge₂Sb₂Te₅, that is, the Ag₈In₁₄Sb₅₅Te₂₃ composites bear stronger thermal conduction and diffusion than the Ge₂Sb₂Te₅ phase-change memory materials.     

110 W ceramic Nd<Superscript>3+</Superscript> : Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> laser

A high-power, continuous-wave 0.6% Nd³⁺-doped ceramic Y₃Al₅O₁₂ (Nd:YAG) laser has been developed. 110 W laser output at 1064 nm was obtained, with a slope efficiency of about 41%. The M² factor was found to be around 6. The laser performance of the ceramic laser material was found to compare favorably with that obtained with single crystal Nd:YAG. PACS 42.55.-f; 42.55.Xi; 42.70.Hj     

Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi<Subscript>1.5</Subscript>Zn<Subscript>1.0</Subscript>Nb<Subscript>1.5</Subscript>O<Subscript>7</Subscript> thin films

Bismuth Zinc niobate (Bi_1.5Zn_1.0Nb_1.5O₇) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.     

Magnetic and magnetoresistive properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sr<Subscript>2</Subscript>FeMoO<Subscript>6–δ</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoheterostructures

A method has been developed for fabricating nanoporous matrices based on anodic aluminum oxide for the deposition of ferromagnetic nanoparticles in them. The modes of deposition of strontium ferromolybdate thin films prepared by the ion-plasma method have been worked out, and the magnetic and magnetoresistive properties, structure, and composition of the films have been investigated. It has been revealed that the microstructure and properties of the strontium ferromolybdate films deposited by ionplasma sputtering depend on the deposition rate and the temperature of the substrate. Based on the measurement of the electrical resistivity of nanoheterostructures in a magnetic field, it has been found that the magnetoresistance reaches 14% at T = 15 K and B = 8 T, which is due to the manifestation of tunneling magnetoresistance.     

Internal friction and magnetoelectric response in two-layer composites Tb<Subscript>0.12</Subscript>Dy<Subscript>0.2</Subscript>Fe<Subscript>0.68</Subscript>–PbZr<Subscript>0.53</Subscript>Ti<Subscript>0.47</Subscript>O<Subscript>3</Subscript>

The inverse magnetoelectric effect and internal friction in two-layer composites based on ferromagnetic Tb_0.12Dy_0.2Fe_0.68 and piezoelectric PbZr_0.53Ti_0.47O₃ are studied in an ac electrical field in the frequency range of 52–213 kHz at temperatures of 293 to 400 K. A correlation is found between the internal friction and the efficiency of the inverse magnetoelectric transformation at resonant frequencies.     

μSR study of Eu<Subscript>0.8</Subscript>Ce<Subscript>0.2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>5</Subscript> and EuMn<Subscript>2</Subscript>O<Subscript>5</Subscript> multiferroics

A comparative μSR study of ceramic samples of the EuMn₂O₅ and Eu_0.8Ce_0.2Mn₂O₅ multiferroics is performed in the temperature range from 15 to 300 K. It is found that the Ce doping of the EuMn₂O₅ sample slightly reduces the temperature of the magnetic phase transition from T _N = 45 K for the EuMn₂O₅ sample to T _N = 42.5 K for the Eu_0.8Ce_0.2Mn₂O₅ sample. Below the temperature T _N for both samples, there are two types of localization of a thermalized muon with different temperature dependences of the precession frequency of the magnetic moment of the muon in an internal magnetic field. The higher frequency in both samples refers to the initial antiferromagnetic matrix. The behavior of this frequency in Eu_0.8Ce_0.2Mn₂O₅ follows the Curie–Weiss law with the exponent β = 0.29 ± 0.02, which differs from the value β = 0.39 standard for 3D Heisenberg magnetics and is observed in EuMn₂O₅, because of the strong frustration of the doped sample. The temperature-independent low frequency is due to the presence of Mn³⁺–Mn⁴⁺ ferromagnetic pairs located along the b axis of the antiferromagnetic matrix and in the regions of phase separation, which contain such ion pairs and e _g electrons recharging them. In both samples, polarization losses are the same (about 20%) and are associated with the formation of Mn⁴⁺–Mn⁴⁺ + Mu complexes near Mn³⁺–Mn⁴⁺ ferromagnetic pairs. In the temperature interval from 25 to 45 K, the separation of the Eu_0.8Ce_0.2Mn₂O₅ structure into two fractions where the relaxation rates of polarization of muons differ by an order of magnitude is revealed. This effect is due to a change in the state of regions of phase separation (1D superlattices) at the indicated temperatures. Such effect in EuMn₂O₅ is significantly weaker.     

High-Temperature Heat Capacity of Zn<Subscript>2</Subscript>V<Subscript>2</Subscript>O<Subscript>7</Subscript>–Cu<Subscript>2</Subscript>V<Subscript>2</Subscript>O<Subscript>7</Subscript> Solid Solutions

Differential scanning calorimetry has been used to study the influence of temperature on the heat capacity of synthesized vanadates Zn₂V₂O₇, (Cu_0.56Zn_1.44)V₂O₇, and (Cu_1.0Zn_1.0)V₂O₇. It is found that dependences C_p = f(T) have extremes. The thermodynamic properties of Zn₂V₂O₇ have been determined.     

Cluster spin glass and superparamagnetism in RuSr<Subscript>2</Subscript>Eu<Subscript>1.5</Subscript>Ce<Subscript>0.5</Subscript>Cu<Subscript>2</Subscript>O<Subscript>10-</Subscript><Subscript>δ</Subscript>

We investigate in detail the dc magnetization and nonlinear ac susceptibility behavior of the superconducting ferromagnet RuSr₂Eu_1.5Ce_0.5Cu₂O_{10- δ} (Ru1222) to develop a comprehensive understanding of the spin glass and superparamagnetism in this material. The structural properties of the system result in the formation of magnetic (ferromagnetic) clusters of different sizes, shapes and properties. The magnetic clustering of the system leads to observation of various features in dc magnetization and ac susceptibility consistent with superparamagnetism and cluster spin glass states, which can coexist or stand alone, depending on the temperature range considered. Experimental results of magnetic measurements in combination with their analysis have enabled us to explain and distinguish these phenomena, as well as to propose a temperature dependent scenario of the system behavior.     

Role of A-site deficiency in the magneto-transport properties of Pr<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> relaxed films

The magneto-transport properties of thick relaxed A-site deficient films having the composition Pr Sr_0.3MnO₃ (P_□SMO with the □ symbol for the Pr vacancy) and Pr_0.7Sr MnO₃ (PS_□MO) are studied. A direct comparison with a Pr_0.7Sr_0.3MnO₃ (PSMO)completely relaxed film, deposited under the same growth conditions, shows a reduction of the in-plane parameter a₁₀₀ associated to an enhancement of the out-plane parameter. The strains (bulk strain ε_B and biaxial Jahn-Teller strain ε_J-T) do vary with the nature of the cationic vacancy. For example, an enhancement of ε_B of 9% in the PS_□MO film (Sr deficient) produces a decrease of T_C of 30 K, whereas the Pr deficient P_□SMO film exhibits a large reduction of both ε_B (-16%) and ε_J-T (divided by a factor of 5), which enhances T_C of 12 K, similarly to previous observations on bulk ceramics. With a reduced resistivity (ρ<0.02 Ω cm), the obtained Pr-deficient film, P_□SMO, exhibits the best magneto-transport properties with a decreasing magnetoresistance sensitivity at low field.     

Microwave characterization of Pb<Subscript>1−x</Subscript>Ca<Subscript>x</Subscript>Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> multiferroics at X-band

The microwave characteristics of Pb_1?x Ca _x Fe_0.5Nb_0.5O₃ multiferroics (x = 0.0, 0.4, 0.45, 0.5, 0.55, 0.6), have been investigated as a function of frequency and substitution. The results depict ?13.99 dB reflection loss at 11.65 GHz in composition x = 0.6. Microwave absorption is enhanced with substitution of Ca²⁺ ions and undoped composition 0.0 behaves as electromagnetic shield. The model governing microwave absorption is discussed and different compositions for electromagnetic applications have been suggested.     

Spectroscopic analysis of Pr<Superscript>3+</Superscript> crystal-field transitions in YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

Yttrium aluminium borate single crystals, doped with 1 and 4 mol% of Pr³⁺, were analyzed in the wave number range 500–25000 cm⁻¹ and temperature range 9–300 K by means of high-resolution Fourier transform spectroscopy. In spite of the complex spectra, exhibiting broad and split lines, the energy level scheme was obtained for several excited manifolds. The careful analysis of the spectra as a function of the temperature allowed us to identify most of the sublevels of the ground manifold. The thermally induced line shift, well described by a single-phonon coupling model, could be exploited to provide information about the energy of the phonons involved. The orientation of the dielectric ellipsoid and of the dipole moments associated to a few transitions was also determined from linear dichroism measurements. The experimental data were fitted in the framework of the crystal-field theory, but the agreement was not satisfactory, as already reported for Pr³⁺ ion in other matrices. Additional discrepancies came from the dichroic spectra analysis and the line splitting, possibly associated to hyperfine interaction. Some causes which might be responsible for the difficulties encountered in the Pr³⁺ ion theoretical modelling are discussed.     

Electrical switching in the MoO<Subscript>3</Subscript>–WO<Subscript>3</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript> and MoO<Subscript>3</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

High field electrical switching on blown films of MoO₃(60%)–P₂O₅(40%), MoO₃(50%)–WO₃(10%)–P₂O₅(40%), and MoO₃(45%)–WO₃(15%)–P₂O₅(40%) having different thicknesses was studied and compared. Switching was observed using two terminal samples. S-type current–voltage characteristic (current-controlled negative resistance—CCNR) with memory was observed in molybdenum–phosphate glasses, but N-type characteristic (voltage-controlled negative resistance—VCNR) with threshold in tungsten–molybdenum–phosphate glasses was observed. The important observation was that with the addition of WO₃ to binary MoO₃–P₂O5 led to a change of I–V characteristic from CCNR with memory to VCNR with threshold. The measurements of density and molar volume showed linear relation between MoO₃ content and density which decreased with the increase of MoO₃ content. The samples’ thickness had no significant effect on threshold voltage. The attained results also indicated that the electrode material had no effect on switching property of devices. The switching behavior of the devices did not show any dependence on the polarity of the applied voltage. In terms of the effect of heat on the switching behavior of molybdenum–phosphate glasses, it was found that threshold voltage decreases with increasing of temperature. Finally, the switching phenomenon was explained by thermal (formation of crystalline filaments) and electronic models.