Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance

Ce, Nd and Eu doped BSO crystals 20×20× 100mm³ in size have been gown by vertical Bridgman method, and the doped effects on radiation resistance of BSO have also been studied for the first time. Nd and Eu dopns were found to improve the radiation resistance of BSO. However, Cc and Nd dopings degrade the light output of BSO except that Eu doping has almost no effect on it. Therefore, Eu may be the most promising dopant candidate for improving the scintillation properties of BSO crystal.     

Decoration of dislocations in Bi12SiO20 crystals by annealing in a reducing atmosphere

Dislocations in Bi₁₂SiO₂₀ (BSO) crystals, annealed in a reducing atmosphere, were directly observed by conventional light microscopy in transmission mode. A one-to-one correspondence between dislocations and etch pits was observed.     

Bi20TiO32 nanocones prepared from Bi–Ti–O mixture by metalorganic decomposition method

Bi₂₀TiO₃₂ in the form of nanocones are reported for the first time, which have been found during the formation of Bi₂Ti₂O₇ nanocrystals. Bi₂₀TiO₃₂ nanocones were prepared by metalorganic decomposition technique. From X-ray patterns, it was found that Bi₂₀TiO₃₂ is a metastable phase, and can transform gradually into Bi₂Ti₂O₇ phase with the annealing time increasing at a temperature of 550°C. The image of field emission scanning electron microscopy shows that the lengths of the nanocones are up to several micrometers and the diameters of cusps range from 20 to 200 nm. The studies of transmission electron microscopy show that the nanocones are crystalline Bi₂₀TiO₃₂. The growth mechanism of Bi₂₀TiO₃₂ nanocones has been proposed, which is similar to the vapor–liquid–solid growth mechanism.     

Phase relations around langasite (La3Ga5SiO14) in the system La2O3–Ga2O3–SiO2 in air

Phase relations around langasite (LGS, La₃Ga₅SiO₁₄) were studied on the basis of phase assemblage observed during calcination and crystallization process of samples of various compositions in the ternary system La₂O₃–Ga₂O₃–SiO₂. A ternary compound of apatite structure, La₁₄Ga_xSi_9–xO_39–x/2 was found for the first time. Crystallization of this compound was observed in the cooling process of molten samples of stoichiometric LGS as well as LGS single crystal, demonstrating that LGS is an incongruent-melting compound. A phase diagram was established primarily based on the crystallization sequence in the cooling process.     

Phase diagram of the SrS–Ga2S3 system and its application to the single-crystal growth of SrGa2S4

Ce-doped SrGa₂S₄ compound is expected as a new host material of blue EL devices. However, the basic properties of bulk single crystals have not been fully clarified, since this compound has been mostly synthesized in the form of polycrystals or thin films. Here, we firstly present the pseudo-binary phase diagram of the SrS–Ga₂S₃ system constructed in accordance with our DTA data for single-crystal growth of SrGa₂S₄. It is shown that SrGa₂S₄ compound has a congruent melting point and a eutectic reaction in the side of excess of Ga₂S₃ concentration. On the basis of the phase diagram, single crystals of SrGa₂S₄ are grown using Ga₂S₃ as a self-flux in a horizontal Bridgman furnace. Colorless and transparent crystals having a typical size 2×2×2 mm³ are obtained.     

Characterisation of semiconducting V2O5–Bi2O3–TeO2 glasses through ultrasonic measurements

Tellurite containing vanadate (50−x)V₂O₅–xBi₂O₃–50TeO₂ glasses with different bismuth (x=0, 5, 10, 15, 20 and 25 wt%) contents have been prepared by rapid quenching method. Ultrasonic velocities (both longitudinal and shear) and attenuation (for longitudinal waves only) measurements have been made using a transducer operated at the fundamental frequency of 5 MHz in the temperature range from 150 to 480 K. The elastic moduli, Debye temperature, and Poisson’s ratio have been obtained both as a function of temperature and Bi₂O₃ content. The room temperature study on ultrasonic velocities, attenuation, elastic moduli, Poisson’s ratio, Debye temperature and glass transition temperature show the absence of any anomalies with addition of Bi₂O₃ content. The observed results confirm that the addition of Bi₂O₃ modifier changes the rigid formula character of TeO₂ to a matrix of regular TeO₃ and ionic behaviour bonds (NBOs). A monotonic decrease in velocities and elastic moduli, and an increase in attenuation and acoustic loss as a function of temperature in all the glass samples reveal the loose packing structure, which is attributed to the instability of TeO₄ trigonal bipyramid units in the network as temperature increases. It is also inferred that the glasses with low Bi₂O₃ content are more stable than with high Bi₂O₃ content.     

A new technique for the growth of superconducting YBa2Cu3O6 + δ crystals completely separated from flux

Growth of completely flux-separated YBa₂Cu₃O_{6 + δ} (referred to as 123 phase) crystals using a novel technique is described. The technique employs a modification of the seed pulling method commonly used in crystal growth. The crystals are grown in the temperature range of 960–1000°C using a BaCuO₂ flux. A 123 flux ratio of 1:5 is maintained. Photographs of the crystals and photomicrograph of the surfaces are presented to show complete flux-separation of the crystals measuring 6 mm × 3 mm × 1 mm. The Raman spectra recorded on the as-grown crystals show that they are in the tetragonal phase. Magnetic susceptibility measurements on crystals annealed in an oxygen atmosphere show a superconducting transition starting at 71 K. The present technique offers a possibility of growing large, completely flux-separated crystals of 123 for superconductivity research.     

Optimal crystal growth conditions of thin films of Bi2Te3 semiconductors

Crystal growth conditions of Bi₂Te₃ narrow bandgap semiconductors have been studied using molecular beam epitaxy method. It was applied to the growth of Bi₂Te₃ on Bridgman single-crystal substrate Sb₂Te₃. Substrate ingots were taken from the natural cleavage along the (0001) plane. The deposited conditions have been studied as a function of substrate temperature (T_s) and flux ratio (F_R=F(Te)/F(Bi)). The quality of deposited layers was controlled by X-ray diffraction, scanning electron microscope (SEM), secondary ion mass spectroscopy (SIMS) depth profiling and energy-dispersive X-ray (EDX) microanalyser. The sticking coefficients K_s(Te) and K_s(Bi) of the elements that compose Bi₂Te₃ were determined. It was found that the stoichiometry of deposited layers depended on substrate temperature and flux ratio. It was observed that all deposited layers were single-crystal in the orientation of their substrates with a small shift due to the stress in layer.     

CdCr2Se4−CdCl2 phase diagram for the crystallization of semiconducting spinel CdCr2Se4 from high temperature solution

The part of the CdCr₂Se₄-CdCl₂ phase diagram within the range of 75–100 mole% of CdCl₂ has been examined. The composition CdCr₂Se₄ · CdCl₂ was found to be stable below 542°C. The crystallisation processes of CdCr₂Se₄ spinel for two mixture compositions: 88% CdCl₂-12% CdCr₂Se₄ and 80% CdCl₂-20% CdCr₂Se₄ have been carried out and the parameters of CdCr₂Se₄ crystal growth from the CdCl₂ flux were determined.     

Growth and properties of Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals directly from melt

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by a modified Bridgman method directly from melt using an allomeric Pb[(Mg_1/3Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal as a seed. X-ray diffraction (XRD) measurement confirmed that the as-grown PZNT91/9 single crystals are of pure perovskite structure. Electrical properties and thermal stabilization of PZNT91/9 crystals grown directly from melt exhibit different characters from those of PZNT91/9 crystals grown from flux, although segregation and the variation of chemical composition are not seriously confirmed by X-ray fluorescence analysis (XPS). The [0 0 1]-oriented PZNT91/9 crystals cut from the middle part of the as-grown crystal boules exhibit broad dielectric-response peaks at around 105 °C, accompanied by apparent frequency dispersion. The values of piezoelectric constant d₃₃, remnant polarization P_r, and induced strain are about 1800–2200 pC/N, 38.8 μC/cm², and 0.3%, respectively, indicating that the quality of PZNT crystals grown directly from melt can be comparable to those of PZNT91/9 single crystals grown from flux. However, further work deserves attention to improve the dielectric properties of PZNT crystals grown directly from melt. Such unusual characterizations of dielectric properties of PZNT crystals grown directly from melt are considered as correlating with defects, microinhomogeneities, and polar regions.     

Ambient-condition growth of superconducting YBa2Cu4O8 single crystals using KOH flux

YBa₂Cu₄O₈ is a stoichiometric oxide superconductor of T_c80 K. Unlike YBa₂Cu₃O_7−δ, this compound is free from oxygen vacancy or twin formation and does not have any microscopic disorder in the crystal. Doping with Ca raises its T_c to 90 K. The compound is a promising superconductor for technological application. Up to now, single crystals have not been grown without using specialized apparatus with extremely high oxygen pressure up to 3000 bar and at over 1100 °C due to the limited range of reaction kinetics of the compound. This fact has delayed the progress in the study of its physical properties and potential applications. We present here a simple growth method using KOH as flux that acts effectively for obtaining high-quality single crystals in air/oxygen at the temperature as low as 550 °C. As-grown crystals can readily be separated from the flux and exhibit a perfect orthorhombic morphology with sizes up to 0.7×0.4×0.2 mm³. Our results are reproducible and suggest that the crystals can be grown using a conventional flux method under ambient condition.     

Top-seeded solution growth of LiB3O5

We report on the top-seeded solution growth of LiB₃O₅ from an excess B₂O₃ solution. Parameters investigated include the Li₂O/B₂O₃ ratio, rotation rate, pulling rate, cooling rate, and seed direction. With careful control of the above parameters, we have grown clear crystals of 25 × 30 × 20 mm in size. Selected nonlinear optical properties of these crystals are reported. Observations concerning the occurrence of unstable growth (inclusions, hopper growth) are discussed, and methods to eliminate the unstable growth are suggested.     

Hydrolytic resistance of Na2O---B2O3---SiO2 gels prepared by sol-gel process

Alkoxide derived gels were prepared in the system Na₂O---B₂O₃---SiO₂. The gel compositions were situated in the liquid-liquid immiscibility area of the phase equilibrium diagram.

Hydrolytic resistance tests were performed on the gels heat-treated at temperatures ranging between 120 to 850 °C. The Na₂O, B₂O₃ and SiO₂ extracted from the attack gels were analyzed. The experimental results indicate that the amount of B₂O₃ has a significant influence on the chemical durability of the heat-treated gels. At temperatures of 850 °C the greater the B₂O₃ mol% the greater are the amounts of Na₂O and B₂O₃ extracted. Different behaviour was observed for gels heat-treated at 600 °C where the amounts of B₂O₃ and Na₂O extracted slightly increases as the B₂O₃ mol% increases. Small amounts of extracted SiO₂ were always observed.

These results are complemented with other measurements so that an explanation of the controlling mechanism is given.     

Growth and spectral properties of Nd-doped Sr3Y(BO3)3 crystal

A new crystal of Nd³⁺:Sr₃Y(BO₃)₃ with dimension up to 25×35 mm² was grown by Czochralski method. Absorption and emission spectra of Nd³⁺: Sr₃Y(BO₃)₃ were investigated . The absorption band at 807 nm has a FWHM of 18 nm. The absorption and emission cross sections are 2.17×10⁻²⁰ cm² at 807 nm and 1.88×10⁻¹⁹ cm² at 1060 nm, respectively. The luminescence lifetime τ_f is 73 μs at room temperature     

Toughened glass-ceramics containing ZrO2 and Al2O3 prepared by the sol-gel process from metal alkoxides

Glasses of compositions 5ZrO₂·5SiO₂(ZS), 5ZrO₂·Al₂O₃·4SiO₂(ZAS) and 5 5ZrO₂·0.5Al₂O₃·0.5Na₂O·4SiO₂(ZANS) were prepared by the sol-gel process from metal alkoxides and sintered to make glass-ceramics. Tetragonal ZrO₂ was precipitated by heat treatment at 900 to 1300°C. The activation energy for tetragonal ZrO₂ crystal growth was extremely high in Al₂O₃ containing glasses. ZAS and ZS were sintered to the near theoretical densities above 1200°C, at which the predominant phase was tetragonal ZrO₂. On the other hand, for ZANS, high densification was not attained owing to the large pores enclosed by the glass phase. Strength and fracture toughness increased with the densification and the crystal growth of tetragonal ZrO₂, reaching 450 MPa and 9 MN/m^1.5, respectively.     

Improved growth of PbI2 single crystals

The phase equilibrium and the crystallization process of lead iodide (PbI₂) melt have been primarily investigated according to the lead–iodine phase diagram. It is found that the iodine evaporation and the segregated lead deposition are the two important factors that affect the PbI₂ crystal quality. The new method of Pulling U-type quartz growth ampoule has been made to impede the decomposition of PbI₂ and the vaporization and condensation of iodine. An orange and translucent PbI₂ single crystal of large size was obtained by the improved growth method, i.e. U-type ampoule pulling. Resistivity of the as-grown crystal is up to 4×10¹¹ Ω cm, and IR transmission is up to 45% in the region from 7800 to 450 cm⁻¹. Therefore, the improved growth method is a promising convenient new method for the growth of high quality PbI₂ crystals.     

Crystallization of In2O3 by vapor reaction

Crystallization of In₂O₃ occured in closed porcelain crucibles in air at 960–1200°C by vapor phase reaction of In₂O or In vapor with the oxygen diffusing into the system. The In₂O or In vapors were thermally generated from mixtures such as graphite/In₂O₃, graphite/In, In₂O₃/In and graphite/In₂O₃/In. The graphite/In₂O₃ system at a mole ratio of 30/1 and 1000°C produced yellow, transparent needle crystals with a maximum size of 0.5 X 0.5 X 8 mm and electrical resistivity of 5.5 X 10^-2 ω cm at 25°C.     

Growth by self-flux method and post-annealing effect of Bi2Sr2Ca1Cu2Ox single crystals

Post-annealing effects on superconducting characteristics have been studied in Bi₂Sr₂Ca₁Cu₂O_x single crystals grown by a conventional flux method. Also, favorable growth conditions and the effect of the pre-sintering process on the starting materials for flux growth have been examined. The best superconducting behavior is obtained in post-annealed crystals grown from pre-sintered powder materials. The critical current density J_c estimated from magnetization hysteresis in annealed crystals grown with pre-sintered materials is roughly 8×10⁵ A/cm² (Hc) and 5×10⁴ A/cm² (Hc) at 4.2 K at zero field.     

Effect of Al2O3 on phase separation and crystallization in ZnO---Al2O3---B2O3---SiO2 glasses

The effect of alumina on the phase separation and the crystallization of the glasses of composition (mol%) 18ZnO·30B₂O₃·52SiO₂ and O-40 Al₂O₃ was studied using an electron microscope and IR spectroscopy. The main crystalline phase appears in the microphase for which the compositions are not nearer to the crystal stoichiometry than the mean. The addition of Al₂O₃ suppresses the immiscibility but enhances the crystallizability.     

Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

Metal organic chemical vapor deposition has been investigated for growth of Bi₂Te₃ films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi₂Te₃ films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of −160 μVK⁻¹) and good surface morphology of this material is promising for Bi₂Te₃-based thermoelectric thin film and two-dimensional supperlattice device applications.