Subband current in resonant tunneling diode

An accumulation layer is formed on the emitter side of a biased resonant tunneling diode (RTD) leading to a similar subband structure as in the ordinary MOS-system. Electrons occupying the subbands can tunnel through the RTD-structure and give rise to a significant contribution to the diode current. We calculate the subband current from our semiclassical transport model developed earlier for the ordinary tunneling current. The model includes quantum interference and bulk scattering by utilizing an optical approximation for the coherent part of the wave function. The subband current turns out to be of the same order of magnitude as the ordinary tunneling current component. It is shifted to higher voltages and therefore it increases the valley current. In order to reduce the subband current and improve the peak-to-valley current ratio (PVCR), we propose a novel RTD-structure with a grading in front of the emitter barrier. The purpose of the grading is to suppress the formation of the accumulation layer and thereby decrease the valley current. Calculations show that PVCR increases by a factor of two using a proper design of the grading.     

Voltage-controlled spin selection in a magnetic resonant tunneling diode

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.     

S-shaped current bistability in a bipolar resonant tunneling diode

The bipolar tunneling transport through p–i–n double barrier structures has been studied by means of simultaneous electrical transport measurements and electroluminescence spectroscopy. An “inverted” hysteresis loop is observed at the onset of the first electronic resonance in the current–voltage characteristics with an electrical ON/OFF ratio of more than two orders of magnitude. Relating the different branches of the current–voltage characteristic to the space charges accumulated throughout the structure the inverted hysteresis loop is interpreted in terms of an S-shaped current bistability. The S-shaped current bistability is similar to the current driven negative differential resistivity as known for instance from thyristor action. This analogy between the bipolar double barrier structure with alloyed n-type emitter and the thyristor will be briefly discussed.     

High frequency properties of resonant tunneling diode

The small signal analysis for the resonant tunneling diode (RTD) is carried out by using a semiclassical transport theory. Multiple scattering effects are accounted for in an optical approximation by using a complex mean free path. An analytical expression for the conduction current is given. The results show that the negative differential conductance prevails up to the frequency f₀ limited by the quantum well transit time. The imaginary part of the admittance can be presented by a series inductance as has been recently found experimentally. In addition, the equivalent circuit has a capacitor in parallel with the conductance-inductance branch. Above f₀ the admittance shows an oscillatory behaviour. The oscillations are associated with the quantum well transit time resonances.     

Spin-polarized current produced by a double barrier resonant tunneling diode

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) made with a semimagnetic semiconductor is studied theoretically. The calculated spin-polarized current and polarization degree are in agreement with recent experimental results. It is predicted that the polarization degree can be modulated continuously from +1 to −1 by changing the external voltage such that the quasi-confined spin-up and spin-down energy levels shift downwards from the Fermi level to the bottom of the conduction band. The RTD with low potential barrier or the tunneling through the second quasi-confined state produces larger spin-polarized current. Furthermore a higher magnetic field enhances the polarization degree of the tunneling current.     

Effects of the quantum inductance on the equivalent circuit model of a resonant tunneling diode

The effects of the quantum inductance, due to the resonance lifetime of an electron in a double barrier potential, are studied in the equivalent circuit model of a resonant tunneling diode. Regions of stable and unstable circuit behavior are obtained through a small signal analysis, and phase diagrams are found using a pseudo-Monte Carlo simulation. A comparison with a previous model is made. In addition the large signal behavior of the circuit model is investigated, and a reduction in the maximum oscillator frequency is demonstrated.     

GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响

通过理论计算研究GaMnN铁磁共振隧穿二极管自旋电流输运特性.理论结果表明在电流特性曲线上出现两个明显的自旋分裂峰.该电流自旋分裂峰和相应的自旋极化随温度的升高而逐渐减小消失.当进一步考虑到GaN异质结界面极化电荷影响时,自旋向下的电流共振峰得到明显增强,同时电流的自旋极化也得到相应的提高.在一定的极化电荷条件下,可以获得较高的自旋极化电流. 关键词： GaMnN 共振隧穿 自旋电流 极化电荷     

基于AlGaN/GaN共振隧穿二极管的退化现象的研究

文章研究了GaN基共振隧穿二极管 (RTD) 的退化现象. 通过向AlGaN/GaN/AlGaN量子阱中引入三个实测的深能级陷阱中心并自洽求解薛定谔方程和泊松方程, 计算并且讨论了陷阱中心对GaN基RTD的影响. 结果表明, GaN基RTD的退化现象是由陷阱中心的缺陷密度和激活能的共同作用引起. 由于陷阱中心的电离率和激活能的指数呈正相关关系, 因此具有高激活能的陷阱中心俘获更多电子, 对负微分电阻 (NDR) 特性的退化起主导作用. 关键词： 共振隧穿二极管 GaN 陷阱中心 电离率     

Observation of nonmagnetic resonant scattering effects by tunneling in dilute Al-mn alloy superconductors

We have observed the BCS-like density of states predicted for energy-gap suppression by nonmagnetic Anderson impurities in superconductors. We show that Mn impurities in Al exhibit no magnetic character and act exclusively as strong resonant scattering sites without producing time-reverse symmetry breaking of Cooper pairs (pair breaking).     

Density of states effect on resonant tunneling

We study the effect of a gaussian type of density of states distribution on the conductance of a thin amorphous junction in the presence of localized states. The absolute value of the conductance is strongly affected by the width of the distribution but is sensitive to the center of the distribution only in the case of narrow distributions. All these effects disappear once we normalize the conductance to its zero field value.     

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.     

Monolithically integrated chirp-managed laser based on a resonant tunneling filter

We have proposed a monolithically integrated chirp-managed laser (CML) that consists of a directly modulated single-mode DFB laser and an optical spectrum reshaper (OSR) filter based on a double-slanted-trench resonant tunneling structure (DST-RTS). Slanted trenches facilitates the occurrence of resonant tunneling effect, which produces a steep-edge narrow-band OSR filter, and meanwhile directing most of the reflected waves out of the laser cavity, consequently eliminating the need of an isolator. Characteristics of the DST-RTS filter have been investigated and simulation results show that the proposed 25 Gbps 1.55 μm CML can send signal over 22 km standard single-mode fiber for bit error rate of 10^?12.     

Properties of monolithic integration of a resonant tunneling diode and a quantum well laser

An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by the current emitted by the resonant tunneling diode. When the current in the laser exceeds the threshold current, laser light is produced. Since the current in the laser exhibits negative differential resistance similar in behavior to the current of a resonant tunneling diode, a bistable light output can be obtained from this new device.     

Experimental analysis of resonant tunneling transit time using high-frequency characteristics of resonant tunneling transistors

We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for GaAs/AlAs with the same barrier layer thickness. In addition, the obtained times agree reasonably well with calculated phase time. It is probably the elastic resonance width and not the inelastic scattering effect that mainly determines the resonant tunneling transit time.     

Rashba spin-orbit effect on dwell time of electrons tunneling through semiconductor barrier

A study on characteristics of electrons tunneling through semiconductor barrier is evaluated, in which we take into account the effects of Rashba spin-orbit interaction. Our numerical results show that Rashba spin-orbit effect originating from the inversion asymmetry can give rise to the spin polarization. The spin polarization does not increase linearly but shows obvious resonant features as the strength of Rashba spin-orbit coupling increases, and the amplitudes of spin polarization can reach the highest around the first resonant energy level. Furthermore, it is found that electrons with different spin orientations will spend quite different time through the same heterostructures. The difference of the dwell time between spin-up and spin-down electrons arise from the Rashba spin-orbit coupling. And it is also found that the dwell time will reach its maximum at the first resonant energy level. It can be concluded that, in the time domain, the tunneling processes of the spin-up and spin-down electrons can be separated by modulating the strength of Rashba spin-orbit coupling. Study results indicate that Rashba spin-orbit effect can cause a nature spin filter mechanism in the time domain.     

Spin-filter tunneling in superconducting mesa structures with a ferromagnetic manganite interlayer

We have studied the current transport and magnetism in epitaxial hybrid superconducting mesa structures consisting of a cuprate superconductor and superconducting niobium with a manganite LaMnO₃ (LMO) interlayer. We have shown experimentally using magnetic resonance that the magnetization, magnetic anisotropy parameters, and transition temperature to the ferromagnetic state of the interlayer of the structures are analogous to those of an autonomous LMO film grown on a neodymium gallate substrate. The estimate of the barrier height obtained from the dependence of the characteristic resistance of mesa structures on the interlayer thickness has shown the barrier height variation with the thickness in the range of 5–30 mV. The temperature dependences of the conductivity of the mesa structure in the range between superconducting transition temperatures of the superconductors can be described in the theory taking into account the d-wave nature of the superconductivity for one of the electrodes and the spin-filtering of carriers passing through the tunnel interlayer. Spin-filtering is confirmed by the tunnel magnetoresistance and the high sensitivity of mesa structures to a weak external magnetic field in a voltage interval smaller than the gap of niobium.     

Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure

The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW.     

Interface roughness,polar optical phonons,and the valley current of a resonant tunneling diode

Theory, numerical simulations, and experimental measurements of the valley current of a GaAs/AlAs resonant tunneling diode are compared. The effect on the valley current of different interface-roughness correlation models, island sizes, and asymmetric roughness is described. Initially, the valley current increases quadratically with island size. Between 6 and 10 nm there is a crossover and the contribution to the valley current begins to decrease. Asymmetric roughness on normal and inverted interfaces (smooth normal and rough in verted) results in order of magnitude different contributions to the valley current under forward and reverse bias. This asymmetry in the valley current occurs even when the polar optical phonon scattering is taken into account. The polar optical phonon scattering dominates the valley current.     

InAs/GaSb/AlSb resonant tunneling spin device concepts

We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.