Double-layer coating of SrCO3/TiO2 on nanoporous TiO2 for efficient dye-sensitized solar cells

Surface modification plays a crucial role in improving the efficiency of dye-sensitized solar cells (DSSCs), but the reported surface treatments are in general superior to the untreated TiO(2) but inferior to the typical TiCl(4)-treated TiO(2) in terms of solar cell performance. This work demonstrates a two-step treatment of the nanoporous titania surface with strontium acetate [Sr(OAc)(2)] and TiCl(4) in order, each step followed by sintering. An electronically insulating layer of SrCO(3) is formed on the TiO(2) surface via the Sr(OAc)(2) treatment and then a fresh TiO(2) layer is deposited on top of the SrCO(3) layer via the TiCl(4) treatment, corresponding to a double layer of Sr(OAc)(2)/TiO(2) coated on the TiO(2) surface. As compared to the typical TiCl(4)-treated DSSC, the Sr(OAc)(2)-TiCl(4) treated DSSC improves short-circuit photocurrent (J(sc)) by 17%, open-circuit photovoltage (V(oc)) by 2%, and power conversion efficiency by 20%. These results indicate that the Sr(OAc)(2)-TiCl(4) treatment is better than the often used TiCl(4) treatment for fabrication of efficient DSSCs. Charge density at open circuit and controlled intensity modulated photocurrent/photovoltage spectroscopy reveal that the two electrodes show almost same conduction band level but different electron diffusion coefficient and charge recombination rate constant. Owing to the blocking effect of the SrCO(3) layer on electron recombination with I(3)(-) ions, the charge recombination rate constant of the Sr(OAc)(2)-TiCl(4) treated DSSC is half that of the TiCl(4)-treated DSSC, accounting well for the difference of their V(oc). The improved J(sc) is also attributed to the middle SrCO(3) layer, which increases dye adsorption and may improve charge separation efficiency due to the blocking effect of SrCO(3) on charge recombination.     

Control of charge recombination dynamics in dye sensitized solar cells by the use of conformally deposited metal oxide blocking layers

We report herein a methodology for conformally coating nanocrystalline TiO2 films with a thin overlayer of a second metal oxide. SiO2, Al2O3, and ZrO2 overlayers were fabricated by dipping mesoporous, nanocrystalline TiO2 films in organic solutions of their respective alkoxides, followed by sintering at 435 degrees C. These three metal oxide overlayers are shown in all cases to act as barrier layers for interfacial electron transfer processes. However, experimental measurements of film electron density and interfacial charge recombination dynamics under applied negative bias were vary significantly for the overlayers. A good correlation was observed between these observations and the point of zero charge of the different metal oxides. On this basis, it is found that the most basic overlayer coating, Al2O3 (pzc = 9.2), is optimal for retarding interfacial recombination losses under negative applied bias. These observations show good correlation with current/voltage analyses of dye sensitized solar cell fabricated from these films, with the Al2O3 resulting in an increase in V(oc) of up to 50 mV and a 35% improvement in overall device efficiency. These observations are discussed and compared with an alternative TiCl4 posttreatment of nanocrystalline TiO2 films with regard to optimizing device efficiency.     

ZnO-Al2O3 and ZnO-TiO2 core-shell nanowire dye-sensitized solar cells

We describe the construction and performance of dye-sensitized solar cells (DSCs) based on arrays of ZnO nanowires coated with thin shells of amorphous Al(2)O(3) or anatase TiO(2) by atomic layer deposition. We find that alumina shells of all thicknesses act as insulating barriers that improve cell open-circuit voltage (V(OC)) only at the expense of a larger decrease in short-circuit current density (J(SC)). However, titania shells 10-25 nm in thickness cause a dramatic increase in V(OC) and fill factor with little current falloff, resulting in a substantial improvement in overall conversion efficiency, up to 2.25% under 100 mW cm(-2) AM 1.5 simulated sunlight. The superior performance of the ZnO-TiO(2) core-shell nanowire cells is a result of a radial surface field within each nanowire that decreases the rate of recombination in these devices. In a related set of experiments, we have found that TiO(2) blocking layers deposited underneath the nanowire films yield cells with reduced efficiency, in contrast to the beneficial use of blocking layers in some TiO(2) nanoparticle cells. Raising the efficiency of our nanowire DSCs above 2.5% depends on achieving higher dye loadings through an increase in nanowire array surface area.     

Tuning the HOMO energy levels of organic dyes for dye-sensitized solar cells based on Br-/Br3- electrolytes

A series of novel metal-free organic dyes TC301-TC310 with relatively high HOMO levels were synthesized and applied in dye-sensitized solar cells (DSCs) based on electrolytes that contain Br(-)/Br(3)(-) and I(-)/I(3)(-). The effects of additive Li(+) ions and the HOMO levels of the dyes have an important influence on properties of the dyes and performance of DSCs. The addition of Li(+) ions in electrolytes can broaden the absorption spectra of the dyes on TiO(2) films and shift both the LUMO levels of the dyes and the conduction band of TiO(2), thus leading to the increase of J(sc) and the decrease of V(oc). Upon using Br(-)/Br(3)(-) instead of I(-)/I(3)(-), a large increase of V(oc) is attributed to the enlarged energy difference between the redox potentials of electrolyte and the Fermi level of TiO(2), as well as the suppressed electron recombination. Incident photon to current efficiency (IPCE) action spectra, electrochemical impedance spectra, and nanosecond laser transient absorption reveal that both the electron collection yields and the dye regeneration yields (Φ(r)) depend on the potential difference (the driving forces) between the oxidized dyes and the Br(-)/Br(3)(-) redox couple. For the dyes for which the HOMO levels are more positive than the redox potential of Br(-)/Br(3)(-) sufficient driving forces lead to the longer effective electron-diffusion lengths and almost the same efficient dye regenerations, whereas for the dyes for which the HOMO levels are similar to the redox potential of Br(-)/Br(3)(-), insufficient driving forces lead to shorter effective electron-diffusion lengths and inefficient dye regenerations.     

Correlating interface heterostructure, charge recombination, and device efficiency of poly(3-hexyl thiophene)/TiO2 nanorod solar cell

The charge recombination rate in poly(3-hexyl thiophene)/TiO(2) nanorod solar cells is demonstrated to correlate to the morphology of the bulk heterojunction (BHJ) and the interfacial properties between poly(3-hexyl thiophene) (P3HT) and TiO(2). The recombination resistance is obtained in P3HT/TiO(2) nanorod devices by impedance spectroscopy. Surface morphology and phase separation of the bulk heterojunction are characterized by atomic force microscopy (AFM). The surface charge of bulk heterojunction is investigated by Kelvin probe force microscopy (KPFM). Lower charge recombination rate and lifetime have been observed for the charge carriers in appropriate heterostructures of hybrid P3HT/TiO(2) nanorod processed via high boiling point solvent and made of high molecular weight P3HT. Additionally, through surface modification on TiO(2) nan,orod, decreased recombination rate and longer charge carrier lifetime are obtained owing to creation of a barrier between the donor phases (P3HT) and the acceptor phases (TiO(2)). The effect of the film morphology of hybrid and interfacial properties on charge carrier recombination finally leads to different outcome of photovoltaic I-V characteristics. The BHJ fabricated from dye-modified TiO(2) blended with P3HT exhibits 2.6 times increase in power conversion efficiency due to the decrease of recombination rate by almost 2 orders of magnitude as compared with the BHJ made with unmodified TiO(2). In addition, the interface heterostructure, charge lifetime, and device efficiency of P3HT/TiO(2) nanorod solar cells are correlated.     

Illumination intensity dependence of the photovoltage in nanostructured TiO2 dye-sensitized solar cells

The open-circuit voltage (V(oc)) dependence on the illumination intensity (phi0) under steady-state conditions in both bare and coated (blocked) nanostructured TiO2 dye-sensitized solar cells (DSSCs) is analyzed. This analysis is based on a recently reported model [Bisquert, J.; Zaban, A.; Salvador, P. J. Phys. Chem. B 2002, 106, 8774] which describes the rate of interfacial electron transfer from the conduction band of TiO2 to acceptor electrolyte levels (recombination). The model involves two possible mechanisms: (1) direct, isoenergetic electron injection from the conduction band and (2) a two-step process involving inelastic electron trapping by band-gap surface states and subsequent isoenergetic transfer of trapped electrons to electrolyte levels. By considering the variation of V(oc) over a wide range of illumination intensities (10(10) < phi0 < 10(16) cm(-2) s(-1)), three major regions with different values of dV(oc)/d phi0 can be distinguished and interpreted. At the lower illumination intensities, recombination mainly involves localized band-gap, deep traps at about 0.6 eV below the conduction band edge; at intermediate photon fluxes, recombination is apparently controlled by a tail of shallow traps, while, for high enough phi0 values, conduction band states control the recombination process. The high phi0 region is characterized by a slope of dV(oc)/d log phi0 congruent with 60 mV, which indicates a recombination of first order in the free electron concentration. The study, which was extended to different solar cells, shows that the energy of the deep traps seems to be an intrinsic property of the nanostructured TiO2 material, while their concentration and also the density ([symbol: see text]t approximately 10(18)-10(19) cm(-3)) and distribution of shallow traps, which strongly affects the shape of the V(oc) vs phi0 curves, change from sample to sample and are quite sensitive to the electrode preparation. The influence of the back-reaction of electrons from the fluorine-doped tin oxide (FTO) conducting glass substrate with electrolyte tri-iodide ions on the V(oc) vs phi0 dependence characteristic of the DSSC is analyzed. It is concluded that this back-reaction route can be neglected, even at low light intensities, when its rate (exchange current density, j0), which can vary over 4 orders of magnitude depending on the type of FTO used, is low enough (j0 < or = 10(-8)A cm(-2)). The comparison of V(oc) vs phi0 measurements corresponding to different DSSCs with and without blocking of the FTO-electrolyte contact supports this conclusion.     

Molecular adjustment of the electronic properties of nanoporous electrodes in dye-sensitized solar cells

Molecular modification of dye-sensitized, mesoporous TiO2 electrodes changes their electronic properties. We show that the open-circuit voltage (V(oc)) of dye-sensitized solar cells varies linearly with the dipole moment of coadsorbed phosphonic, benzoic, and dicarboxylic acid derivatives. A similar dependence is observed for the short-circuit current density (I(sc)). Photovoltage spectroscopy measurements show a shift of the signal onset as a function of dipole moment. We explain the dipole dependence of the V(oc) in terms of a TiO2 conduction band shift with respect to the redox potential of the electrolyte, which is partially followed by the energy level of the dye. The I(sc) shift is explained by a dipole-dependent driving force for the electron current and a dipole-dependent recombination current.     

Sputtered Nb2O5 as an effective blocking layer at conducting glass and TiO2 interfaces in ionic liquid-based dye-sensitized solar cells

The thin Nb(2)O(5) layer works as a remarkable blocking layer when deposited by the rf magnetron sputtering method between fluorine-doped tin oxide and a mesoporous TiO(2) layer, improving open-circuit photovoltage (V(oc)) and fill factor (FF) with power conversion efficiency over 5.5% at 1 sun irradiation of the dye-sensitized TiO(2) solar cells using ionic liquid electrolytes.     

染料敏化太阳能电池的二氧化钛膜性能研究

以二氧化钛(TiO₂)纳米粉(P25)为原料,把它研磨成胶状,用涂敷法制得TiO₂纳米多孔膜,并组装成太阳能电池,用100W氙灯作为模拟太阳光,对电池进行光电性能测试.根据电池的短路电流(I_sc)、开路电压(V_oc)和填充因子(ff)等指标来反映电池的性能.研究表明,分散剂乙酰丙酮、OP乳化剂、研磨时间和热处理后的保温时间长短对TiO₂膜的性能均有很大的影响.其结果是,乙酰丙酮0.15mL、OP乳化剂0.10mL、研磨时间1h和保温时间0.5h时,TiO₂膜的光电性能较好,I_sc、V_oc和ff分别为8.85mA、567mV和0.445.并用XRD和比表面及孔隙分析仪对TiO₂膜进行了表征.     

Significant efficiency improvement of the black dye-sensitized solar cell through protonation of TiO2 films

This paper describes the influence of acid pretreatment ofTiO2 mesoporous films prior to dye sensitization on the performance of dye-sensitized solar cells based on [(C4H9)4N]3[Ru(Htcterpy)(NCS)3] (tcterpy = 4,4',4"-tricarboxy- 2,2',2"-terpyridine), the so-called black dye. The HCl pretreatment caused an increase in overall efficiency by 8%, with a major contribution from photocurrent improvement. It is speculated, from the analysis of incident photon-to-electron conversion efficiency, UV-vis absorption spectra, redox properties of the dye and TiO2, and the impedance spectra of the dye-sensitized solar cells, that photocurrent enhancement is attributed to the increases in electron injection and/or charge collection efficiency besides the improvement of light harvesting efficiency upon HCl pretreatment. Open-circuit photovoltage (V(oc)) remained almost unchanged in the case of significant positive shift of flat band potential for TiO2 upon HCl pretreatment. The suppression of electron transfer from conduction band electrons to the I3- ions in the electrolyte upon HCl pretreatment, reflected by the increased resistance at the TiO2/dye/electrolyte interface and reduced dark current, resulted in a V(oc) gain, which compensated the V(oc) loss due to the positive shift of the flat band. Using the HCl pretreatment approach, 10.5% of overall efficiency with the black dye was obtained under illumination of simulated AM 1.5 solar light (100 mW cm(-2)) using an antireflection film on the cell surface.     

TiO2纳米片/巢状分级结构纳米阵列薄膜的制备及其在染料敏化太阳能电池中的应用

采用水热合成法在氟掺杂二氧化锡(FTO)导电玻璃基底上得到TiO2纳米阵列薄膜,并进一步通过NaOH溶液水热处理制备了由巢状纳米阵列及纳米片覆盖层构成的TiO2纳米阵列分级结构一体化薄膜.采用场发射扫描电镜(FE-SEM),X射线衍射(XRD),紫外-可见(UV-Vis)漫反射光谱和吸收光谱技术对TiO2薄膜的结构和性质进行表征.FE-SEM结果表明:分级结构TiO2薄膜膜厚为1.5μm,薄膜由一层纳米片覆盖层(约0.2μm高)和一层巢状纳米阵列层(约1.3μm高)组成.XRD谱图表明TiO2薄膜为锐钛矿相.UV-Vis光谱显示分级结构TiO2薄膜具有较强的光捕获能力和染料吸附能力.TiO2纳米片/巢状分级结构纳米阵列薄膜作为光阳极,可有效地提高染料敏化太阳能电池的光电转换效率,其短路电流(Jsc)为7.79mA·cm-2,开路电压(Voc)为0.80V,填充因子(FF)为0.40,光电转换效率(η)为2.48%,其光电转换效率较TiO2纳米阵列薄膜提高了近10倍.     

Dye-sensitized TiO2 nanotube solar cells: fabrication and electronic characterization

TiO2 nanotubes (TNTs) with large aspect ratio and large specific surface area were prepared from P25 (Nippon Aerosil) and applied to dye-sensitized titanium dioxide solar cells (DSSCs). Optimization of fabrication conditions, i.e., pH of the starting paste, sintering temperature for the TiO2 electrodes, electrolyte compositions of DSSCs gave the high conversion efficiency with improved open circuit voltage (V(oc)) and fill factor (FF) when compared to DSSCs made of P25. The evaluation of dye adsorption and the photo-injected electron transport such as electron diffusion coefficient (D) and electron lifetime (tau) in TNTs electrodes revealed that the higher efficiency resulted from increase of electron density with keeping much longer tau in TNTs electrodes than in P25 electrodes.     

电化学阻抗谱研究染料/Al2O3交替组装结构的光伏特性及作用机理

使用Al₂O₃和N3染料制备了一种交替组装的结构, 该结构能够提高染料敏化太阳能电池(DSCs)的开路电压(V_oc), 短路电流(J_sc)和转换效率(η). 为了研究(染料/Al₂O₃)交替组装结构的作用机理, 使用电化学阻抗谱技术分析了电池的界面电阻. 分析结果表明, 随着交替组装结构中(染料/Al₂O₃)单元的增加, 光阳极/染料/电解质界面的电阻降低, 电池性能随之提高. 基于电化学阻抗谱分析结果, 建立了一系列的等效电路模型, 从理论上解释了(染料/Al₂O₃)交替组装结构的作用机理.     

The co-effect of Sb and Nb on the SCR performance of the V2O5/TiO2 catalyst

The effect of the Sb and Nb additives on the V(2)O(5)/TiO(2) catalyst for the selective catalytic reduction (SCR) of NO with NH(3) was investigated. The experimental results show that either Nb or Sb can improve the activity of V(2)O(5)/TiO(2) catalyst. Higher Nb loading led to higher N(2) selectivity. The co-doping of Sb and Nb showed higher improving effect than the single doping of Sb or Nb. The V(2)O(5)/TiO(2) catalyst doped with Sb and Nb had a better H(2)O resistance than the V(2)O(5)/TiO(2) catalyst. The addition of Sb and Nb also enhance the resistance of the V(2)O(5)/TiO(2) catalyst to K(2)O poisoning. The catalysts were characterized by BET, XRD, TEM, and XPS. The results showed that the active components of V, Sb, and Nb were well interacting with each other. The coexistence of Sb and Nb will enhance the redox ability and surface acidity and thus promote the SCR performance.     

Fabrication and photocatalytic characterizations of ordered nanoporous X-doped (X = N, C, S, Ru, Te, and Si) TiO2/Al2O3 films on ITO/glass

Transparent, ordered nanoporous TiO2/Al2O3 composite films doped with metal elements (Ru, Si, and Te) and nonmetal elements (N, C, and S) were fabricated by successive anodization and sol-gel process directly on glass substrates covered with a tin-doped indium oxide (ITO) film. The doping of ruthenium, nitrogen, carbon, and sulfur in TiO2 exhibited an enhanced effect on the absorbance, while the doping of silicon and tellurium showed little effect. Particularly, the N- and Ru-doped TiO2/Al2O3 films on ITO/glass developed an enhanced absorption red shift of 580 nm (-N) and 500 nm (-Ru). The nanoporous TiO2/Al2O3 composite film exhibited the highest photocatalytic activity in decomposing acetaldehyde under ultraviolet-light irradiation, with a value of 13 times in initial reaction rate or 7.8 times in quantum yield higher than a commercially available TiO2 material, Degussa P25. The ultraviolet-light photocatalytic activities of nanoporous TiO2/Al2O3 films were enhanced by the doping of nitrogen, carbon, and sulfur but slightly weakened by the doping of ruthenium, silicon, and tellurium. Particularly, the nanoporous N-doped TiO2/Al2O3 films exhibited effective photocatalytic activity on ultraviolet light decomposition of a highly toxic dioxin, HpCDD, and gave the highest decomposition rate of approximately 95% (via 7 h of irradiation) for the specimen with a dopant content of 1.7 wt % nitrogen.     

Effect of supporting surface layers on catalytic activities of gold nanoparticles in CO oxidation

The surfaces of fumed silica materials were modified with a surface sol-gel process for catalysis applications. This surface-modification approach allows not only a monolayer growth of TiO(2) or Al(2)O(3) but also a stepwise double-layer growth of TiO(2)/TiO(2), Al(2)O(3)/Al(2)O(3), TiO(2)/Al(2)O(3), or Al(2)O(3)/TiO(2) on the surfaces of the silica materials with a monolayer precision. XRD analyses revealed that the coated monolayers and double layers of TiO(2) and Al(2)O(3) were amorphous. Gold nanoparticles were successfully deposited on the above six surface-modified silica materials via a deposition-precipitation method. The catalytic activities of these six gold catalysts for CO oxidation are highly dependent on the structures of their surface monolayers or double layers. The gold catalyst supported on the silica material functionalized with a TiO(2) monolayer (Au/TiO(2)) is the most active in both as-synthesized and oxidized forms, while the gold catalyst supported on the silica material functionalized with an Al(2)O(3)/TiO(2) double layer (Au/Al(2)O(3)/TiO(2)/SiO(2)) is the most active in the reduced form among the six catalysts. Surprisingly, the gold catalyst supported on the silica material functionalized with a TiO(2)/Al(2)O(3) double layer (Au/TiO(2)/Al(2)O(3)/SiO(2)) has much less activity than Au/Al(2)O(3)/TiO(2)/SiO(2) under all various treatments, underscoring the sensitivity of the catalytic activity to the structure of the supporting surfaces.     

Incorporation of functionalized single-wall carbon nanotubes in dye-sensitized TiO2 solar cells

Effects of incorporation of acid-treated single-wall carbon nanotubes (a-SWCNs) in TiO(2) film and of anchorage of dye-linked, a-SWCNs (hereafter dye-SWCNs) to the TiO(2)/electrolyte interface on photocurrent-voltage characteristics of dye-sensitized solar cells were studied. Compared with an unmodified cell, the modified cell with the a-SWCNs in TiO(2) film showed a 25% increase in short-circuit photocurrent (J(sc)). The J(sc) increase is correlated with improved connectivity between the a-SWCNs and the TiO(2) particles and with enhanced light scattering by TiO(2) clusters formed in the presence of the a-SWCNs. In the case of anchoring dye-SWCNs to the TiO(2)/electrolyte interface, the open-circuit voltage (V(oc)) increased by as much as 0.1 V, possibly due to the basicity of the TiO(2) surface from NH groups of ethylenediamine moieties of the anchored dye-SWCNs.     

The importance of dye chemistry and TiCl(4) surface treatment in the behavior of Al(2)O(3) recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

Atomic layer deposition (ALD) was used to fabricate Al(2)O(3) recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al(2)O(3) recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO(2) active layer and the HTM spiro-OMeTAD. The impact of Al(2)O(3) barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl(4) surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al(2)O(3) deposition. However, only when the TiCl(4) treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al(2)O(3) ALD and the TiCl(4) surface treatment whereas the insulating properties of Al(2)O(3) hinder charge injection and lead to current loss in TiCl(4)-treated devices. The impact of Al(2)O(3) barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al(2)O(3) growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems.     

Mg(OOCCH(3))(2) as an electrolyte additive for quasi-solid dye-sensitized solar cells: with the purpose of enhancing both the photovoltage and photocurrent by modifying the TiO(2)/dye/electrolyte interfaces

The interface modification effect within quasi-solid dye-sensitized solar cells and the photovoltaic performance were investigated after the introduction of Mg(OOCCH(3))(2) as an additive into a polymer gel electrolyte. Electrochemical impedance spectroscopy showed that the addition of Mg(OOCCH(3))(2) into the polymer gel electrolyte can efficiently retard charge recombination at the TiO(2)/electrolyte interface. Mg(OOCCH(3))(2) in the electrolyte can also contribute to the enhancement of the incident photon-to-electron conversion efficiency by modifying the dye molecules. This results in an improvement in the photovoltage and photocurrent due to a barrier layer at the TiO(2)/electrolyte interface and the promotion of charge injection at the dye/TiO(2) interface, respectively. Photovoltaic measurements reveal that a conversion efficiency enhancement from 4.05% to 4.96% under 100 mW cm(-2) is obtained after the amount of Mg(OOCCH(3))(2) added was optimized.     

Origin of enhancement in open-circuit voltage by adding ZnO to nanocrystalline SnO2 in dye-sensitized solar cells

SnO2 + ZnO working electrodes for dye-sensitized solar cells were made by mixing a nanocrystalline SnO2 colloidal dispersion with ZnO or Zn(CH3COO)2. Addition of ZnO or Zn(CH3COO)2 enhanced the open-circuit voltage (V(oc)) of the cells with respect to cells containing only SnO2. Dependence of the electron lifetime in the electrodes on short-circuit photocurrent density (J(sc)) gave evidence against the assumption that the suppression of back electron transfer to the electrolyte is the origin for the V(oc) enhancement by addition of Zn. V(oc) dependence on temperatures indicated a decrease in the combined capacitance of the mixed electrode. The slope of the V(oc) dependence versus the logarithm of J(sc) indicated that the contribution of unpinning of the band to the enhancement of V(oc) could be neglected. From the cyclic voltammograms of the electrodes, the combined capacitance of the mixed electrode was 1 order of magnitude smaller than that of SnO2. The decrease in the combined capacitance in the mixed electrode could be explained by the decrease in the chemical capacitance of SnO2, thus the shift of the conduction band position toward the vacuum level. X-ray photoelectron spectra of Sn 3d(5/2) peaks showed a shift toward lower binding energy with an increasing amount of added Zn. This was attributed to an increase in the surface potential toward the negative direction, which might have resulted from a dipole moment formed by Zn on the surface of SnO2.