Growth and spectral properties of Nd:LaVO4 crystal

This paper reports the growth and spectral properties of 3.5 at% Nd³⁺:LaVO₄ crystal with diameter of 20×15 mm² which has been grown by the Czochralski method. The spectral parameters were calculated based on Judd–Ofelt theory. The intensity parameters Ω_λ are: Ω₂=2.102×10⁻²⁰ cm², Ω₄=3.871×10⁻²⁰ cm², Ω₆=3.235×10⁻²⁰ cm². The radiative lifetime τ_r is 209 μs and calculated fluorescence branch ratios are: β₁(0.88μm)=45.2, β₂(1.06μm)=46.7, β₃(1.34μm)=8.1. The measured fluorescence lifetime τ_f is 137 μm and the quantum efficiency η is 65.6%. The absorption band at 808 nm wavelength has an FWHM of 20 nm. The absorption and emission cross sections are 3×10⁻²⁰ and 6.13×10⁻²⁰ cm², respectively.     

MoS2/SnS异质结太阳能电池的模拟研究

硫化亚锡(SnS)是一种Ⅳ-Ⅵ族层状化合物半导体材料,其禁带宽度与太阳能电池最佳带隙1.5 eV非常接近,并且在可见光范围内光的吸收系数很大(α>10⁴ cm^-1),因此SnS是一种很有应用前景的材料。本文利用太阳能电池模拟软件wxAMPS模拟了MoS₂/SnS异质结太阳能电池,主要研究SnS吸收层的厚度、掺杂浓度和缺陷态等因素对太阳能电池性能的影响。研究发现:SnS吸收层最佳厚度为2 μm,最佳掺杂浓度为1.0×10¹⁵ cm^-3;同时高斯缺陷态浓度超过1.0×10¹⁵ cm^-3时,电池各项性能参数随着浓度的增加而减小,而带尾缺陷态超过1.0×10¹⁹ cm^-3·eV^-1时,电池性能才开始下降;其中界面缺陷态对太阳能电池影响比较严重,界面缺陷态浓度超过1.0×10¹² cm^-2时,开路电压、短路电流、填充因子和转换效率迅速下降。另外,通过模拟获得的转换效率高达24.87%,开路电压为0.88 V,短路电流为33.4 mA/cm²。由此可知,MoS₂/SnS异质结太阳能电池是一种很有发展潜力的光伏器件结构。     

Extraction of band diagram parameters from Fowler–Nordheim model in silicon dioxide

In electric fields >10⁷ V/cm, we have observed that the conduction current through Si(n⁺)/SiO₂/poly-Si(n⁺) capacitors is larger than that predicted by the classical Fowler–Nordheim law for the case of a triangular potential barrier. This phenomenon appears for both gate polarities just before electric breakdown occurs. An attempt to model this excess current by direct tunneling or by other well-known conduction mechanisms such as Schottky, Poole–Frenkel or hopping effects has been unsuccessful. We have succeeded in interpreting experimental data by considering the SiO₂ layer as a non-triangular potential barrier, which leads to a non-linear relationship between the tunneling length and the applied voltage. By using a semi-linear approach, an oxide conduction band model presenting two potential wells located at approximately from 2.5 nm to within ±0.2 nm from each oxide interface has been obtained. These two singularities may be related to the presence of a non-uniformly distributed positive charge in SiO₂.     

Growth and spectral properties of Nd-doped Sr3Y(BO3)3 crystal

A new crystal of Nd³⁺:Sr₃Y(BO₃)₃ with dimension up to 25×35 mm² was grown by Czochralski method. Absorption and emission spectra of Nd³⁺: Sr₃Y(BO₃)₃ were investigated . The absorption band at 807 nm has a FWHM of 18 nm. The absorption and emission cross sections are 2.17×10⁻²⁰ cm² at 807 nm and 1.88×10⁻¹⁹ cm² at 1060 nm, respectively. The luminescence lifetime τ_f is 73 μs at room temperature     

Quantum transport measurements on Si δ- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy

A series of high quality δ-doped In_0.53Ga_0.47As samples have been grown lattice matched to InP with design doping densities in the range 2×10¹² to 5×10¹² cm⁻². Analysis of the individual sub-band densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.     

双甜菜碱为客体包合物的三维氢键网格的构筑

利用硫脲和双甜菜碱制备了一种新型的包合物 [^-OOCCH₂N⁺(CH₃)₂]₂(CH₂)₃·4(NH₂)₂CS,用X射线单晶衍射方法测定其晶体结构。结果表明,晶体属三斜晶系,P1ˉ空间群, 其中a=0.884 5(2) nm,b=0.936 7(2) nm,c=0.946 4(3) nm,α=91.591(2)°,β=91.591(2)°,γ=91.591(2)°,Z=1,R₁=0.039 9, wR₂=0.100 6(I>2σ(I))。在标题化合物的晶体结构中,硫脲分子通过N-H…S氢键肩并肩相连形成四聚体,客体分子的羧基通过N-H…O氢键连接硫脲四聚体形成氢键层,客体阳离子部分夹在相邻的氢键层中,形成三明治晶体结构。     

Molecular beam epitaxy growth and properties of GaAs/(AlGa)As p-type heterostructures on (100), (011), (111)B, (211)B, (311)B, and (311)A oriented GaAs

We report on a series of Be-doped GaAs/AlGaAs two-dimensional hole gas (2DHG) structures grown on (110), (111)B, (211)B and (311)B oriented substrates and compare their properties with high-mobility samples grown on (311)A using Si doping. The samples were prepared and grown under the same conditions so as to render them comparable. They are found to have mobilities which are strongly anisotropic within the plane. The highest mobility is found on the (110) surface with 100,000 cm² V⁻¹ s⁻¹, while the (211) surface gave the lowest values 10,000 cm² V⁻¹ s⁻¹. However, the later samples are found to have quantum Hall effect critical currents of >70 μA: an exceptionally high value for a hole gas which makes them suitable for metrology. All the samples show strong low-field positive magnetoresistance with resistance increases of up to 30% at magnetic fields of only 0.1 T. The presence of this feature on all the different planes shows that it does not depend upon the details of the band structure. It is identified with the lifting of the degeneracy of the spin sub-bands by the asymmetrical potential giving rise to a classical two-band magnetoreresistance.     

The effect of annealing on the structure of Ge20Te80 glass: atomic-scale imaging using a scanning tunnelling microscope

The effect of annealing on the structure of Ge₂₀Te₈₀ glass has been examined in atomic-scale images obtained using a scanning tunnelling microscope (STM). The STM image has been able in part to answer the question as to how the atomic structure is changed by low-temperature (<T_g) annealing, whereas the effect of annealing on the structure was never observed in previous neutron diffraction study. Scanning tunneling microscope images as large as ≈ 100 nm² have provided atomic-resolution ridges ≈ 3 nm in length. The nearest neighbour distance between peaks in each alignment is equal to ≈ 0.5 nm; the alignments in parallel with each other are a distance of ≈ 0.7 nm apart. These ridges can generate a surface associated with pseudo flatness, the size of which is less than ≈ 10 nm². Thus, the effect of annealing on the structure of as-quenched Ge₂₀Te₈₀ glass has given rise to intermediate-range order in a region less than ≈ 10 nm². The atomic configuration of annealed Ge₂₀Te₈₀ glass is inhomogeneous in the range < 10 nm².     

Structural distribution and rigidity of the glass network determined by EPR of Cu

The linewidth-broadening of the EPR spectra of Cu²⁺ in silicate, borate and phosphate glasses was analyzed in terms of the distribution of g_| and A_| (δ_| and δA_|) and related to the distribution of the rigidity of the network structure. X- and K-band spectra were measured for the glasses doped with ⁶³Cu²⁺ (93% abundance). The linewidth of the HFS shoulders with parallel orientation to H increased linearly with increasing m or microwave frequency. δg_| and δA_| showed a marked dependence on glass composition. For example, in Na₂O---B₂O₃ glasses, on going from x (mol% of Na₂O) being small through intermediate to large, δg_| varied from small through large to negligibly small. In contrast to these glasses δg_| was extremely large for 75PbO · 25B₂O₃ glass. The large δg_| for the Na₂O---B₂O₃ glassesof intermediate x was attributed to the coexistence of various borate groups competitively coordinating to Cu²⁺. Negligibly small δg_| for 70Na₂O · 30B₂O₃ glass and extremely large δg_| for 75PbO ·25B₂O₃ glass, both with a narrower structural distribution, reflect regidity of the glass network. The Pb---O bonding is strong enough to distort the coordination of Cu²⁺-complex. The situation is the reverse in Na₂O---B₂O₃ glasses.     

铁离子掺杂对铜铬黑颜料呈色性能的影响

为改善CuCr2O4黑色颜料呈色性能,将Fe3+掺杂进入CuCr2O4晶体中,采用共沉淀法制备CuCr2-xFexO4(x=0,0.04,0.05,0.06,0.07),并对所制备样品进行TG-DTA、XRD、SEM、Raman、XPS、UV-Vis吸收光谱和色度值的测试与表征.结果表明,Fe以三价态固溶进入Cr3+位...     

Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer

The (Pb_0.90La_0.10)TiO₃ [PLT] thick films (3.0 μm) with a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering method. The PLT thick films comprise five periodicities, the layer thicknesses of (Pb_0.90La_0.10)TiO₃ and PbO in one periodicity are fixed. The PbO buffer layer improves the phase purity and electrical properties of the PLT thick films. The microstructure and electrical properties of the PLT thick films with a PbO buffer layer were studied. The PLT thick films with a PbO buffer layer possess good electrical properties with the remnant polarization (P_r=2.40 μC cm⁻²), coercive field (E_c=18.2 kV cm⁻¹), dielectric constant (ε_r=139) and dielectric loss (tan δ=0.0206) at 1 kHz, and pyroelectric coefficient (9.20×10⁻⁹ C cm⁻² K⁻¹). The result shows the PLT thick film with a PbO buffer layer is a good candidate for pyroelectric detector.     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.     

Raman spectroscopic study on the structure of ZnCl2---ZnX2 and ZnCl2---KX (X = Br, I) glasses

Raman spectra have been measured for ZnCl₂---ZnX₂ and ZnCl₂---KX (X = Br, I) glasses to investigate the structure of the glasses with varying composition. The assignment of each band was made, and the change of the spectra with composition was explained in terms of the bridging and non-bridging states of halide ions and the change of the tetrahedral units, ZnX_nCl_4−n²⁻ (n = 0–4), formed in the glasses. As the content of ZnX₂ in ZnCl₂---ZnX₂ glasses increases (20 → 80 mol%), the peak frequency of the Zn---Cl stretching mode increases (238 → 248 cm⁻¹ in X = I glasses, 238 → 259 cm⁻¹ in X = Br glasses) while the Zn---I and Zn---Br stretching frequencies decrease (173 → 120 cm⁻¹ for Zn---I, 196 → 157 cm⁻¹ for Zn---Br). The decrease of the Zn---I and Zn---Br band frequencies was attributed to the increase of the number n of the ZnX_nCl_4−n²⁻ tetrahedra. The increase of the Zn---Cl frequency suggests the existence of the bonding state of Cl⁻ ions which is intermediate between the bridging and the non-bridging states. In ZnCl₂---KX glasses, the Zn---Cl_non-bridging band at about 300 cm⁻¹ was observed in addition to the bands observed in ZnCl₂---ZnX₂ glasses. The addition of KX produces non-bridging anions while the tetrahedral units, ZnX_nCl_4−n²⁻ are also formed.     

The effect of oxide impurity on the physical properties of fluorozirconate glass

The effect of oxide impurity on the physical properties of 62ZrF₄---8LaF₃---30BaF₂ (mol.%) glass was studied by equimolecular substitution of BaO for BaF₂. It is shown that the oxide impurity decreases the infrared transparency beyond 6 μm, shifts the transmission cut-off wavelength to higher frequencies and causes an additional absorption shoulder at 1350 cm⁻¹. The oxide impurity also increases the glass transition temperature, the crystallization temperature and the viscosity of the melt. The additional infrared absorption of oxide impurity in the fluorozirconate glasses results from the multiphonon process of the vibration of F---Zr---O bonds at 680 cm⁻¹.     

Absorption band at 7.6 eV induced by γ-irradiation in silica glasses

Optical absorption of defects induced by γ-irradiation in both natural and synthetic silica is experimentally investigated in the vacuum-ultraviolet (UV) range. Our results show that γ-rays, in a dose range of 1000 Mrad, induce an absorption band centered at 7.6 eV, the so-called E band, whose growth kinetics is not related to γ-activated precursors but to defects of the glassy matrix directly induced via the breaking of Si–O bonds occurring under γ-irradiation. Moreover, we observe that γ-rays do not bleach the E band present in some silica samples before irradiation, so ruling out that the associated defects can be precursors of the paramagnetic E^′ centers, also induced by γ-irradiation.     

Photoluminescence at 1.9 eV in synthetic wet silica

We report the effects of γ-irradiation on the optical activity of wet synthetic silica samples. As a function of γ-dose, the growth of a composite structure in the 4–6 eV spectral region of the absorption spectrum is observed. This structure can be resolved into two main contributions centered at 5.8 and 4.8 eV, respectively. The first component is usually attributed to an optical transition of the E^′ centers. The second one is able to excite an emission band centered at 1.9 eV. The analysis of the growth kinetics, in the γ-dose range 20–1000 Mrad, of both emission at 1.9 eV and absorption at 4.8 eV shows that these two bands change in a similar way, reaching constant amplitudes, after an initial linear increase, at a dose depending on the OH content. In addition, their ratio is independent of the sample. These results are consistent with a structural model in which the observed optical activity arises from a single-point defect induced by γ-irradiation. Moreover, based on the correlation with the OH content in our samples, we suggest that the principal candidate for this point defect is the non-bridging oxygen hole center (HBOHC).     

P和Al掺杂立方相Ca2Si电子结构及光学性质的第一性原理计算

采用基于密度泛函理论的第一性原理平面波超软贋势方法,分别计算了立方相Ca2Si及掺杂P、Al的电子结构和光学性质.结果表明:立方相Ca2Si是带隙为0.55483 eV的直接带隙半导体,价带主要由Si的3p和Ca的3d、4s态电子构成,导带主要由Ca 的3d、4s和Si的3p态电子共同构成,静态介电常数为11.92474,折射率为3.45322.Ca2Si掺P后,Ca2Si转变为n型半导体,其带隙值是0.42808 V,价带主要由Si、Al的3p和Ca的3d、4s态电子构成,导带主要由Ca的3d、Al的3p、3s和Si的3p态电子构成.静态介电常数为7.92698,折射率为2.81549.掺Al后, Ca2Si转变为n型半导体,带隙值是0.26317 eV,费米面附近的价带主要由Si、P的3p和Ca的3d态电子构成,导带主要由Ca的3d 4s、P的3p、3s和Si的3p态电子构成.静态介电常数为17.02409,折射率为4.12603.掺P和Al均降低Ca2Si的反射率,提高Ca2Si的吸收系数,提高Ca2Si的光利用率.说明掺杂能够有效地改变Ca2Si的电子结构和光学性质,为Ca2Si材料的研发和应用提供理论依据.     

α相和β相BiNbO4∶Eu3+的荧光性能

采用高温固相法合成出正交相和三斜相结构的BiNbO₄∶Eu³⁺样品,利用X 射线衍射(XRD)、拉曼光谱、吸收光谱和荧光光谱对样品的结构和光学性能进行了研究。结果表明:900 ℃合成样品为正交相结构α-BiNbO₄,而1 200 ℃得到三斜相结构β-BiNbO₄。吸收光谱得到α相和β相BiNbO₄的光学带隙分别为2.69 eV和2.96 eV,与第一性原理的理论结果2.640 eV和3.032 eV相吻合。Eu³⁺掺杂诱导二者的光学带隙蓝移至2.89 eV和3.05 eV,有效改变了其光响应范围。荧光光谱表明:Eu³⁺在两种结构的最强荧光峰均来自⁵D₀→⁷F₂电偶极跃迁,最强荧光峰分别位于615 nm和611 nm。Eu³⁺在β-BiNbO₄中的荧光强度更高,而且其⁵D₀→⁷F₂和⁵D₀→⁷F₁的荧光强度比值更大。与Eu³⁺相似,Er³⁺在β-BiNbO₄中具有更高的上转换荧光强度,其强度约是在α-BiNbO₄中荧光的近40倍,说明三斜结构BiNbO₄更适合做稀土离子的基质材料。     

Infrared and Raman spectroscopy of particle-beam induced damage of silicon carbide

The damaging of 6H-SiC by ion implantation (Ar⁺, 320 keV) leads to the formation of a light-absorbing surface layer with a thickness of about 0.4 μm and a dielectric function which indicates a disordering of the crystal structure. Raman spectra show the existence of amorphous carbon, silicon and silicon carbide. Ion bombardment with 1.4 MeV He⁺ ions generates a 3 μm thick surface layer with small lattice distortions and light-absorbing centers and a 0.4 μm thick interface layer with a larger refractive index.     

Infrared study of SiO2 sol to gel evolution and gel aging

The evolution of the gelation of silica gel was studied by means of Fourier transform infrared spectroscopy. The gel was prepared by hydrolysis and polycondensation of tetraethyl orthosilicate in the presence of water with HCl, and with formamide (DCCA) in methanol either added or not. For both systems the gelation process was followed by the time evolution of the ν-Si---O(H) and ν-Si---O(Si) absorption bands. In the systems which used formamide, the ν-Si---O(H) peak shifts from ≈ν = 950 cm⁻¹ for τ = 0 to ≈ν = 968 cm⁻¹ (t = t_gel) and tends to shifts to 975 cm⁻¹ over a long period of time (t = 100t_gel), and a slow rate evolution between 0.1 and 0.4 t_gel is observed. In the absence of formamide the same evolution is observed without the slow rate plateau. For ν-Si-O(Si) absorption bands, the band near 1075 cm⁻¹ remains practically unchanged in both systems during the experiment time, but the second absorption band at 1133 cm⁻¹ is split into two bands each having its own specific evolution, depending on composition and temperature.