Effect of S- and Sn-doping to the optical properties of ZnO nanobelts

In this study, the optical properties of S- and Sn-doped ZnO nanobelts, grown by thermal evaporation, were investigated. The sulfur and tin contents in the nanobelts were about 12% and 8% (atomic), respectively. The average widths of the S- and Sn-doped ZnO nanobelts were 73 and 121 nm, respectively. Room temperature photoluminescence (PL) spectroscopy exhibits significantly different optical properties for the two types of nanobelts. The PL result of the S-doped ZnO nanobelts shows the broad visible emission with no detectable ultraviolet (UV) peak, while the PL result of the Sn-doped sample shows two emission bands, one related to UV emission with a strong peak at 376 nm that is blue-shifted by 4 nm in comparison to pure ZnO nanobelts, and another related to green emission with a weak peak. A weak peak in the UV region at 383 nm appeared after annealing the S-doped ZnO nanobelts at 600 °C. Additionally, the annealed S-doped nanobelts show a stronger peak in the visible emission region in comparison to that observed prior to annealing. The Sn-doped ZnO nanobelts are also affected by annealing, as the UV emission peak is blue-shifted to 372 nm after annealing.     

Large-scale synthesis of SnO2 nanobelts

Tin dioxide (SnO₂) nanobelts have been successfully synthesized in bulk quantity by a simple and low-cost process based on the thermal evaporation of tin powders at 800 °C. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations reveal that the nanobelts are uniform, with lengths from several-hundred micrometers to a few millimeters, widths of 60 to 250 nm and thicknesses of 10 to 30 nm. X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and selected-area electron diffraction analysis (SAED) indicate that the nanobelts are tetragonal rutile structure of SnO₂. The SnO₂ nanobelts grow via a vapor–solid (VS) process. Received: 3 June 2002 / Accepted: 10 June 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: gwmeng@mail.issp.ac.cn     

Self-assembly of β-Ga2O3 nanobelts

Self-assembly of β-Ga₂O₃ (beta-gallium oxide) nanobelts with diameters of 50–100 nm and lengths of tens to hundreds of microns have been studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). Under appropriate conditions such as nanobelts concentration, controlled solvent evaporation, β-Ga₂O₃ nanobelts assemble into a fan-like structure on the substrate. A tendency of these nanobelts to align parallel to each other was also observed. The mechanism behind the formation of self-assembly of β-Ga₂O₃ nanobelts has been proposed on the basis of lateral capillary forces.     

Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor–liquid–solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.     

Synthesis and luminescent property of single-crystal ZnO nanobelts by a simple low temperature evaporation route

Large-scale ZnO nanobelts in aligned fashion have been prepared via a simply conducted low temperature evaporation route using the oxidization of metallic zinc plates at 450±10 °C under ambient pressure. The produced nanobelt array has been structurally characterized by powder X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microscopy (TEM). The microscope images show that the nanobelts are about 120-micron long, ranging on average from 80 to 160 micron, with about 30 nm in thickness. In addition to XRD, high-resolution TEM images and electron-diffraction patterns show that the nanobelts are single crystalline with wurtzite structure and mostly grow along the [0001] direction. The photoluminescence spectra of the single nanobelts show that the nanobelts have a dominant near-band-edge emission at about 388 nm with a very weak defect emission band centered at about 514 nm. PACS 81.05.Ys; 81.15.Gh; 78.66.Jg     

Growth of single-crystal ZnS nanobelts through a low-temperature thermochemistry route and their optical properties

ZnS nanobelts have been synthesized on a large scale using a simple thermochemistry method where the sources were Zn and ammonium polysulphide. The nanobelts had a uniform single-crystal hexagonal wurtzite structure with width ranging from 50 to 150 nm and length up to several tens of micrometers. The growth of ZnS nanobelts is controlled by vapor-solid (VS) crystal growth mechanism. Photoluminescence (PL) measurement shows that the nanobelts have a strong blue emission at about 450 nm and a green light emission at 530 nm. PACS 73.61.Ga; 78.55.Et; 81.15.Gh; 68.37.Hk; 68.37.Lp     

The structure and photoluminescence properties of ZnO nanobelts prepared by a thermal evaporation process

ZnO nanobelts had been synthesized by a simple method of thermal evaporation of Zn powders. The morphology, structure and photoluminescence (PL) properties of ZnO nanobelts were studied. The nanobelts had a single-crystal hexagonal structure and grew along the (0 0 0 1) direction with several micrometers long, 50-400 nm wide and 30-100 nm thick. Photoluminescence measurement showed that the nanobelts had an intensive near-band ultraviolet emission at about 3.3 eV. The obtained experimental data suggest that the ultraviolet PL in ZnO nanobelts originates from the recombination of the acceptor-bound excitons and free extions at room temperature. The absence of the deep level emission indicated very low impurity concentration and high crystalline quality in the ZnO nanobelts. Large-area growth and high quality indicate that the prepared ZnO nanobelts have potential application in optoelectronic devices.     

Catalytic synthesis of single-crystalline gallium nitride nanobelts

Single-crystalline gallium nitride nanobelts have been synthesized through the reaction of gallium vapor with flowing ammonia using nickel as a catalyst. The as-synthesized products were characterized using X-ray powder diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction (SAED). XRD and SAED results revealed that the products are pure, single-crystalline GaN with hexagonal structure. The widths and thickness of the nanobelts ranged from 80 to 200 nm, and 10 to 30 nm, respectively. The lengths were up to several tens of micrometers. The nanobelts had smooth surface with no amorphous sheath, and a sharp-tip end. The growth mechanism of nanobelts was discussed.     

Synthesis, structure, and photoluminescence of Zn2SnO4 single-crystal nanobelts and nanorings

A large quantity of single-crystal Zn₂SnO₄ (ZTO) nanobelts is synthesized by using a thermal evaporation method. The lengths of the nanobelts are up to several hundreds of micrometers, and the average width and thickness are about 400 and 30 nm, respectively. Some ring-like nanobelts, called nanorings here, are also observed. The nanobelts are characterized in detail with scanning electron microscope, X-ray powder diffraction, transmission electron microscope, high-resolution transmission electron microscope and selected area electron diffraction. Possible growth mechanisms for the ZTO nanobelts and nanorings are proposed. In addition, the photoluminescence spectrum (PL) of the nanobelts at room temperature shows a stable broad blue-green emission around the 400-600 nm wavelengths with a maximum center at 490 nm. The strong PL emission of the nanobelts may find potential applications in nano-scale optoelectronic devices.     

Tin-doped indium oxide nanobelts grown by carbothermal reduction method

This communication discusses the formation of doped nanobelts produced by a simple route. Tin-doped indium oxide (ITO) nanobelts were obtained by a carbothermal reduction method. The nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX) and wavelength-dispersive X-ray spectroscopy (WDX). The results show that the nanobelts have a cubic structure, are single crystalline and doped with tin and grow in the [400] direction. PACS 81.07.-b; 61.46.+w; 68.37.Hk; 68.37.Lp     

Synthesis of High Quality CdS Nanorods by Solvothermal Process and their Photoluminescence

Large-scale cadmium sulfide (CdS) nanorods with high quality were successfully synthesized by solvothermal method using ethylenediamine (en) aqueous as solvent. The as-obtained product was investigated by X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), field emission scanning electron microscopy (FE-SEM), ultraviolet–visible (UV–Vis) spectrum and photoluminescence (PL) spectrum. The length and width of the CdS nanorods were in the range of 1–2 μm, 30–40 nm, respectively. XRD analysis revealed that the crystal structure of the product was hexagonal phase. Photoluminescence measurement showed that the nanobelts have two main emission bands around 470 and 560 nm, which should come from the higher-level transition and the intrinsic transition, respectively.     

Spinel-type ZnSb<Subscript>2</Subscript>O<Subscript>4</Subscript> nanowires and nanobelts synthesized by an indirect thermal evaporation

Uniform zinc antimoniate (ZnSb₂O₄) nanowires and nanobelts with a spinel structure were synthesized by an indirect thermal evaporation method in air. The as-synthesized ZnSb₂O₄ nanowires and nanobelts are single crystalline, usually several tens of microns in length. The diameter of the nanowires is about 20 nm; the thickness and the width of the nanobelts are about 15 nm and 60 nm, respectively. Most of the nanowires and nanobelts grow along the [001] direction. A possible formation mechanism is also proposed to account for the growth of these ZnSb₂O₄ nanobelts and nanowires. PACS 61.46.+w; 81.07.-b     

Porous ZnO nanobelts: synthesis,mechanism, and morphological evolutions

Porous ZnO nanobelts with rough surface and poly-crystalline nature have been developed from a facile wet chemical method. The as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), cold field emission scanning electron microscopy (CFE-SEM), and energy dispersive analysis of X-rays (EDAX). The ZnO nanobelts were synthesized with usually 5 to 6 nm in thickness, 10 to 40 nm in width, and about several micrometers in length. A PVP promoted self-assembly mechanism is believed to be responsible for the morphology shaping process of the ZnO nanostructures. This first wet chemical synthesis of such hierarchical structures without any hard templates implies a simple and inexpensive way to prepare transition metal superstructures on a large scale for modern chemical synthesis. Optical characterization by a confocal laser Raman were also carried out to explore their optical properties; the PL and Raman results showed both good agreement with the characters of our samples and potential for future applications such as sensors and other modern technologies.     

Porous ZnO nanobelts evolved from layered basic zinc acetate nanobelts

Novel porous ZnO nanobelts were successfully synthesized by heating layered basic zinc acetate (LBZA) nanobelts in the air. The precursor of LBZA nanobelts consisted of a lamellar structure with two interlayer distances of 1.325 and 0.99 nm were prepared using a low-temperature, solution-based method. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and infrared spectroscopy are used to characterize the as-products. PL measurements show that the porous ZnO nanobelts have strong ultraviolet emission properties at 380 nm, while no defect-related visible emission is detected. The good performance for photoluminescence emission makes the porous ZnO nanobelts promising candidates for photonic and electronic device applications.     

Fabrication of MgO nanobelts using a halide source and their structural characterization

MgO nanobelts have been fabricated by chemical vapor deposition using MgCl₃ as starting material. The products consist of a large quantity of belt-like nanostructures with typical lengths in the range of several tens to several hundreds of micrometers; some of them even have lengths on the order of a millimeter. The typical thickness and width-to-thickness ratio of the MgO nanobelts are in the range of 20 to 100 nm and about 5 to 10, respectively. The size and morphology of the MgO nanobelts were measured by transmission electron microscopy. Investigations of X-ray diffraction patterns and using high-resolution transmission electron microscopy indicate that the nanobelts have a cubic structure and are single-crystalline. Received: 23 August 2001 / Accepted: 27 August 2001 / Published online: 2 October 2001     

Study of the bending modulus of individual silicon nitride nanobelts via atomic force microscopy

Analysis of the bending modulus of individual silicon nitride nanobelts in elastic regime is reported here. The nanobelts have the size between 200∼800 nm in width, and thickness 20∼50 nm. Atomic force microscopy was used to image and to perform measurements of force versus bending displacement on individual nanobelts suspending over strips. The bending modulus E_b is deduced by comparison of the measured force curves on the substrate and on the suspending nanobelts. It is shown that the elastic modulus of the silicon nitride nanobelts is about 570 GPa, which is much larger than that of bulk and film of the silicon nitride material. The larger elastic modulus is ascribed to the fact there are less structural defects in the silicon nitride nanobelts. PACS 81.70.Bt; 81.40.Lm; 61.80.+g     

A facile and environmentally friendly chemical route for the synthesis of metastable VO2 nanobelts

Metastable VO₂ nanobelts, designated as VO₂ (B), were successfully fabricated by a facile hydrothermal route in the presence of V₂O₅ and glucose. The samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), transmission electron microscopy (TEM), selected area electronic diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) techniques. The main synthesis parameters such as temperature, reaction time and molar ratio of the starting materials have been also discussed. The results showed that pure B phase VO₂ nanobelts with high crystallinity can be prepared easily at 180 °C in 24 h at the molar ratio of V₂O₅:glucose=1:1. Typically, the belt-like products were 0.6-1.2 μm long, 80-150 nm wide and 20-30 nm thick. It is noted that the whole process is free of any harmful reducing reagents and surfactants, and valuable gluconic acid can be formed as the main by-product. From an economic and environmental point of view, the present approach is particularly fit for the synthesis of VO₂ (B) nanobelts on a large scale.     

TEM investigations on ZnO nanobelts synthesized via a vapor phase growth

Unusual ZnO nanostructures have been successfully synthesized via selenium-controlled chemical vapor phase growth on Si (111) substrates at about 500 degrees C. The microstructure and chemical compositional characteristics of the ZnO nanomaterials have been systematically investigated by means of analytical transmission electron microscopy (TEM), including energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy. Most of the nanostructures have a belt-like morphology with typical widths of approximately 150 nm and lengths up to several micrometers. All the investigated materials are found to be stoichiometric ZnO with a hexagonal crystal structure. The growth directions for the nanobelts are found to be [1010] and [2110] respectively. Regular-triangle and needle-like heads with diameters only approximately 25-35 nm have been found in the straight nanobelts. High-resolution TEM images indicate that all the nanostructures are single crystals and free of defects. The growth mechanisms of such interesting and unique morphologies are briefly discussed.     

Growth of β-Ga2O3 nanobelts on Ir-coated substrates

We demonstrate the production of gallium oxide (Ga₂O₃) nanobelts on iridium (Ir)-coated substrates by thermal evaporation of GaN powders. Scanning electron microscopy revealed that the product consisted of nanobelts with widths in the range of 100–700 nm and thicknesses less than 1/5 of the widths. X-ray diffraction and high-resolution transmission electron microscopy indicated that the nanobelts have the single-crystalline monoclinic structure of Ga₂O₃. The photoluminescence spectrum under excitation at 325 nm showed a broad band with a prominent emission peak around 433 nm.PACS 81.07.-b