镍单晶膜上氧化镍的配位生长取向关系

对在膜面为(110),(001)和(111)的镍单晶膜上生成的氧化镍取向进行了电子衍射分析,除在(111)和(001)镍膜上肯定了前人已发现的氧化镍与镍的平行取向关系外,还在(110)和(001)镍单晶膜上发现了(111)_NiO∥(001)_Ni,〈110〉_NiO∥〈110〉_Ni取向关系以及〈110〉_NiO∥〈110〉_Ni氧化镍纤维织构。在所有氧化镍与镍的取向关系中均有〈110     

用超短光脉冲简并四波混频测量介质弛豫率的研究

本文讨论用ps光脉冲简并四波混频测量非线性介质弛豫率和在适度或强的相位调制情况下测量激光脉冲宽度的方法,通过用计算机模拟及与实验结果比较,得出结论:对t_p>>τ_r和t_p<<τ_r两种极限情况,该方法是足够精确的.对τ_r/t_p的中间情况,该方法只能给出一个估计.     

不稳定局域模及其对杂质中心吸收带宽的影响

本文运用羣论方法,把不稳定局域模和含杂晶格的带内本征矢的散射部分都按格位羣的不可约表示分了类。具体地讨论了最近邻相互作用的简单立方晶格的情况,计算结果表明:可。能产生同P(=γ′/γ)和(=m′/m)有关的T_1u型不稳定局域模和仅与P有关的简并的A_1g,E_g,T_1g,T_2g和简并的T_1u,T_2u型不稳定局域模,以及只有同一类型的对称性驻波才能为杂质所散射。这里m′和m分别为杂质原子和基质原子的质量;γ′和γ分别为杂质与近邻之间和一般近邻之间的力常数。以同样的模型计算了各种类型声子对杂质中心吸收带宽的贡献。指出,宽度很窄的g型不稳定局域模对带宽的贡献可能变得很大,而超过其余声子的总贡献。最后讨论了单有效频率近似可能有的微观理论基础的问题。     

超导临界温度理论(Ⅰ)

本文求出了Eliashberg方程在T=T_c时的解,得到了下面的临界温度级数表示式:T_c=α₀(μ^*)(λ〈ω²〉)^1/2{1+1/λα₁(μ^*)〈ω⁴>/〈ω²>²+1/λ²(α₂₁(μ^*)〈ω⁶>/〈ω²>³+α₂₂(μ^*)〈ω⁴>²/〈ω²>⁴) +1/λ³(α₃₁(μ^*)〈ω⁸>/〈ω²>⁴+α₃₂(μ^*)(〈ω⁴>〈ω⁶>)/〈ω²>⁵)+α₃₃(μ^*)〈ω⁴>³/〈ω²>⁶+…},其中α₀(μ^*),α₁(μ^*)等仅是μ^*的函数。新的T_c公式表明了,T_c不仅依赖于λ、μ^*和〈ω²〉,而且依赖于有效声子谱α²F(ω)的各级矩〈ω²ⁿ〉。     

MX络合物中电荷密度波和自旋密度波对三次谐波产生系数的影响

研究了电子-电子相互作用与电子-声子相互作用的竞争对MX络合物基态及三次谐波产生系数(THG)的影响。根据哈伯德模型,当电子-电子相互作用强度U不超过2t₀(t₀是最近邻的M原子d_z²和x原子Pz轨道间的跳跃能)时,可用Hartree-Fock(HF)近似来研究体系的状态,结果发现随着U的增大,体系会从电荷密度波(CDW)变为自旋密度波(SDW),相交点发生在U～1.2t₀,且是一级相变。在相变点     

四方晶系应变Si空穴散射机制

基于Fermi黄金法则及Boltzmann方程碰撞项近似理论, 推导建立了(001)弛豫Si_1-xGe_x衬底外延四方晶系应变Si空穴散射几率与应力及能量的理论关系模型, 包括离化杂质、声学声子、非极性光学声子及总散射概率(能量40 meV时)模型. 结果表明: 当Ge组分(x)低于0.2时, 应变Si/(001)Si_1-xGe_x材料空穴总散射概率随应力显著减小. 之后, 其随应力的变化趋于平缓. 与立方晶系未应变Si材料相比, 四方晶系应变Si材料空穴总散射概率最多可减小66%. 应变Si材料空穴迁移率增强与其散射概率的减小密切相关, 本文所得量化模型可为应变Si空穴迁移率及PMOS器件的研究与设计提供理论参考.     

无序晶态合金的电阻率

基于Baym原则,将Ziman型液态金属电阻理论推广到晶态金属及替代式的无序合金系统,给出了电阻率的一般表达式,讨论了它们的低温和高温行为。低温下用德拜晶格振动模型,无序晶态系统的电阻率可表为ρ=ρ₀+ρ_d(T/Θ)²+ρ_i(T/Θ)⁵,与实验一致。高温下,考虑到Debye-Waller因子及多声子效应,电阻率趋向饱和。用独立原子振动近似得到的简单公式与实验资料的比较表明:类似Nb这种电阻率的高温非线性偏离可以在本文的模型中自然地得到说明。     

矢量介子φ的动力学模型及耦合常数fφKK2,fωKK2与fρKK2的值

假设矢量介子φ(Ι=0,ι=1,m_φ=7.30m_π)是K散射交换ρ,ω以及φ介子本身而形成的共振。应用双色散关系中的N/D方法,并设ρ,ω以及交换的φ介子的质量为已知,近似求出KK的分波散射振幅。当要求该振幅能重新给出正确的共振位置(φ的质量)和宽度时,即可得出偶合常数f_φKK²、f_ωKK²与f_ρKK²所必需满足的关系,从而给出它们可能取的数值。     

β型烧绿石氧化物超导体AOs2O6 (A=K, Rb) 的 声子软化与超导电性

运用基于密度泛函理论的第一性原理计算方法, 研究两种β 型烧绿石氧化物超导体AOs₂O₆(A=K, Rb) 的结构稳定性, 声子软化以及与超导电性的关系. 通过计算发现, AOs₂O₆中碱金属原子A(=K, Rb) 沿〈111〉 晶向具有不稳定性, 且以K原子的不稳定性更为突出. 同时, 计算得到的KOs₂O₆在布里渊区中心的声子频率普遍比RbOs₂O₆的低, 使得KOs₂O₆的电声子耦合常数比RbOs₂O₆的大. 本文计算结果表明, 较小的碱金属原子K位于较大的氧笼子中, 活动性较强, 导致声子的软化, 是引起KOs₂O₆具有较强的电声子耦合及较高的超导转变温度的根本原因. 这些结果对解释两种β 型烧绿石氧化物超导体AOs₂O₆(A=K, Rb) 的超导电性具有重要意义.     

相互作用玻色子模型中相变特征量的玻色子数N依赖行为

研究了相互作用玻色子模型中各种对相变比较敏感的特征量相对于总玻色子数N的依赖行为. 通过比较这些特征量在U(5)-SU(3)过渡区以及U(5)-O(6)过渡区在不同N情况下的临界行为, 发现BE(2)比值B(E2;4₁→2₁)/B(E2};2₁→0₁)和B(E2;0₂→2₁)/B(E2;2₁→0₁)等可以作为完全区分一级相变和二级相变的有效序参量.     

Galvanomagnetic properties of atomically disordered Sr<Subscript>2</Subscript>RuO<Subscript>4</Subscript> single crystals

The effect of neutron-bombardment-induced atomic disorder on the galvanomagnetic properties of Sr₂RuO₄ single crystals has been experimentally studied in a broad range of temperatures (1.7–380 K) and magnetic fields (up to 13.6 T). The disorder leads to the appearance of negative temperature coefficients for both the in-plane electric resistivity (ρ_a) and that along the c axis (ρ_c), as well as the negative magnetoresistance Δρ, which is strongly anisotropic to the magnetic field orientation (H ∥ a and H ∥ c), with the easy magnetization direction along the c axis and a weak dependence on the probing current direction in the low-temperature region. The experimental ρ_a(T) and ρ_c(T) curves obtained for the initial and radiation-disordered samples can be described within the framework of a theoretical model with two conductivity channels. The first channel corresponds to the charge carriers with increased effective masses (～10m _e , where m _e is the electron mass) and predominantly electron-electron scattering, which leads to the quadratic temperature dependences of ρ_a and ρ_c. The second channel corresponds to the charge carriers with lower effective masses exhibiting magnetic scattering at low temperatures, which leads to the temperature dependence of the ρ_{a, c}(T) ∝ 1/T type.     

应变Si/(001)Si1-xGex电子迁移率

依据离化杂质散射、声学声子散射和谷间散射的散射模型,在考虑电子谷间占有率的基础上,通过求解玻尔兹曼方程计算了不同锗组分下,不同杂质浓度时应变Si/(001)Si_1-xGe_x的电子迁移率.结果表明:当锗组分达到0.2时,电子几乎全部占据Δ₂能谷;低掺杂时,锗组分为0.4的应变Si电子迁移率与体硅相比增加约64%;对于张应变Si NMOS器件,从电子迁移率角度来考虑不适合做垂直沟道.选择相应的参数,该方 关键词： 电子谷间占有率 散射模型 锗组分 电子迁移率     

Microwave magnetoresistance and electron spin resonance in Ge:Mn thin films and nanowires

Resonant and nonresonant absorption of microwave radiation is found to occur in germanium films implanted with manganese at concentrations of 2, 4, and 8 at %. Electron spin resonance is observed in two temperature ranges: (i) in the vicinity of the phase transition of Mn₅Ge₃ clusters to the ferromagnetic state at T = 295 K; and (ii) in the range of temperatures below 60 K, at which collective ordering of Mn spins in the crystal lattice and spin-wave resonance take place. The dependence of the nonresonant signal of the microwave magnetoresistance on the magnetic field exhibits a nonmonotonic behavior identical for the X and K microwave bands. An analysis of the field dependence of the microwave magnetoresistance makes it possible to separate two components of the derivative of the magnetoresistance: the quasi-linear Lorentzian component observed in strong fields and the negative exponential anisotropic component determined by spin-dependent scattering of charge carriers from magnetic impurities. The length of the phase relaxation of charge carriers is estimated to be 350 nm at T = 2 K and exceeds the thickness of the film (120 nm) and the sizes of clusters and precipitates (3–5 nm). In quasi-one-dimensional nanowires of the composition Ge:Mn at the same impurity concentrations, microwave magnetoresistance is absent. These facts suggest that conduction in thin films has a quasi-two-dimensional character and that the measured microwave magnetoresistance is associated with charge carriers in the crystal lattice rather than with impurity clusters.     

t-channel factorization description of γγ→V 1 V 2

At-channel factorization model is used to estimate cross sections for the processes γγ→V ₁ V ₂. WheneverV=ρ, the width of the ρ has been included in the calculations. The channels γγ→ρ⁰ρ⁰, ρ⁰?, ??, ωω, ρ⁰ω and ρ⁺ρ^? are calculated for two quasi-real photons. Predictions are also given for the process γ^*γ→ρ⁰ρ⁰ for virtual photon mass squaredQ ²<5 GeV². Our results are consistent with all available experimental data.     

New insights in the T dependence of the electrical resistivity in size-effect dominated pure metal foils from measurements on high-purity Au at low T

Analysis of Soffer's size-effect theory for electrical resistivity shows, for measurements in such a T range for which the temperature dependent portion of the resistivity, ρ_i, is always much smaller than the residual bulk resistivity ρ_∞(0) of the metal studied, that while size-effects leave the essential T dependence of ρ_i unchanged, it may increase its absolute value and the observed residual resistivity ρ(0), thus explaining recent results of Caplin et al. This also corrects the general conclusion arrived at by the latter authors, i.e. that the T dependence of ρ of a metal foil of given residual resistivity is the same as that of a bulk sample of the same residual resistivity provided that the latter is governed by impurity scattering, as being true for a narrow T range only, i.e. for which ρ_i(T) ? ρ_∞(0). However, for this T range a procedure is outlined which allows one to extract values of the surface specularity parameter p_S and also ρ_∞ of the metal foils studied.     

Dechanneling of MeV protons in tungsten

Abstract

A systematic investigation of the dechanneling of protons in tungsten has been completed for the <111> axial direction and also for the (110) plane. Measurements at room temperature have been made at energies of 0.5, 2.0, 3.5, 8.0 and 12.0 MeV; at 2.0 MeV, the effect of target temperature has been investigated over the range 77–873°K. In the axial case, the dechanneling rate increases strongly with the vibrational amplitude _ρ, but not as strongly as the ρ² dependence reported by the Catania group (Refs. 4–7) for silicon and germanium. Also, unlike silicon and germanium, the tungsten axial data exhibit practically no energy dependence and so cannot be fitted by the zρ²/E scaling parameter suggested by the Catania group. On the other hand, the planar dechanneling data in tungsten exhibit the predicted (E ^?1)dependence and relatively littie temperature dependence, in good agreement with previous work.     

Magnetoresistance of La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films grown on a substrate with low lattice mismatch

The structure, electrical resistivity, and magnetoresistance of La_0.67Sr_0.33MnO₃ heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of ≈27% (for μ₀H = 4 T) was observed at T ≈360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity ρ of La_0.67Sr_0.33MnO₃ films is fitted well by the relation ρ = ρ₀ + ρ ₁(H)T^2.3, where ρ₀ = 1.1×10^?4 Ω cm, ρ₁(H = 0) = 1.8×10^?9 Ω cm/K^2.3, and ρ₁(μ₀H = 4 T)/ρ₁(H = 0) ≈0.96. The temperature dependence of a parameter γ characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La_0.67Sr_0.33MnO₃ films is suppressed by a magnetic field (μ ₀H = 5 T) was determined.     

Peculiarities of magnetic,galvanomagnetic, elastic,and magnetoelastic properties of Eu<Subscript>0.55</Subscript>Sr<Subscript>0.45</Subscript>MnO<Subscript>3</Subscript>

Magnetic, elastic, magnetoelastic, transport, and magnetotransport properties of the Eu_0.55Sr_0.45MnO₃ ceramics have been studied. A break was detected in the temperature dependence of electrical resistivity ρ(T) near the temperature of the magnetic phase transformation (41 K), with the material remaining an insulator down to the lowest measurement temperature reached (ρ=10⁶ Ω cm at 4.2 K). In the interval 4.2≤T≤50 K, the isotherms of the magnetization, volume magnetostriction, and ρ were observed to undergo jumps at the critical field H_C1, which decreases with increasing T. For 50≤T≤120 K, the jumps in the above curves persist, but the pattern of the curves changes and H_C1 grows with increasing T. The magnetoresistance Δρ/ρ = (ρ _H ?ρ_H=0)/ρ _H is positive for H<H_C1 and passes through a maximum at 41 K, where Δρ/ρ = 6%. For H>H_C1, the magnetoresistance is negative, passes through a minimum near 41 K, and reaches a colossal value of 3×10⁵ % at H=45 kOe. The volume magnetostriction is negative and attains a giant value of 4.5×10^?4atH=45 kOe. The observed properties are assigned to the existence of three phases in Eu_0.55Sr_0.45MnO₃, namely, a ferromagnetic (FM) phase, in which carriers are concentrated because of the gain in s-d exchange energy, and two antiferromagnetic (AFM) phases of the A and CE types. Their fractional volumes at low temperatures were estimated to be as follows: ～3% of the sample volume is occupied by the FM phase; ～67%, by the CE-type AFM phase; and ～30%, by the A-type AFM phase.     

Amplitudes of two-channel scattering by a two-dimensional potential barrier with a constant height

The immersing method is used to solve the two-channel scattering problem in the case of concrete potential. In particular, we consider the particle scattering by a two-dimensional barrier which is constant in the scattering direction and is arbitrary in the transverse direction. For this case the scattering amplitudes t ₁, t ₂, r ₁, and r ₂ are determined. Expressions for the transmission and reflection amplitudes are obtained for the case of δ-potential. The behavior of the scattering amplitudes in the limit k ₂ → 0 is studied. It is also shown that the ratio of products of transmission and reflection amplitudes for two channels does not depend on the coordinate of the middle of coordinate.