SiC Schottky结反向特性的研究

对Ti/6H-SiC Schottky结的反向特性进行了测试和理论分析，提出了一种综合的包括SiC Schottky结主要反向漏电流产生机理的反向隧穿电流模型，该模型考虑了Schottky势垒不均匀性、Ti/SiC界面层电压降和镜像力对SiC Schottky结反向特性的影响，模拟结果和测量值的相符说明了以上所考虑因素是引起SiC Schottky结反向漏电流高于常规计算值的主要原因.分析结果表明在一般工作条件下SiC Schottky结的反向特性主要是由场发射和热电子场发射电流决定的.     

Properties of the transport layer formed at the interface between two polymer films

Electronic transport properties of a 2D boundary layers formed by two films of an organic polymer material are investigated. It is established that the conductivity of such a layer is several orders of magnitude higher than the surface conductivity of individual films forming the experimental structure. Temperature measurements show that transport of charge carriers over this layer can be described using the models of Schottky thermionic emission and hopping transport over trap levels.     

On the dominant transport mechanism in very thin dielectric films

It is shown that the ratio between tunneling and Schottky thermionic emission currents in MIM structures exhibits a minimum at an applied voltage determined by the structure parameters. For appropriate parameters, the dominant transport mechanism can change from tunneling to Schottky thermionic emission and back to tunneling with increasing applied voltage.     

Pt/Au/n-InGaN肖特基接触的电流输运机理

基于热电子发射和热电子场发射模式,利用I-V方法研究了Pt/Au/n-InGaN肖特基接触的势垒特性和电流输运机理,结果表明,在不同背景载流子浓度下,Pt/Au/n-InGaN肖特基势垒特性差异明显.研究发现,较低生长温度制备的InGaN中存在的高密度施主态氮空位（V_N）缺陷导致背景载流子浓度增高,同时通过热电子发射模式拟合得到高背景载流子浓度的InGaN肖特基势垒高度和理想因子与热电子场发射模式下的结果差别很大,表明V_N缺陷诱发了隧穿机理并降低了肖特基势垒高度,相应的隧穿电流显著增大了肖特基势垒总的输运电流,证实热电子发射和缺陷辅助的隧穿机理共同构成了肖特基势垒的电流输运机理.低背景载流子浓度的InGaN肖特基势垒在热电子发射和热电子场发射模式下拟合的结果接近一致,表明热电子发射是其主导的电流输运机理.     

Theory of thermionic emission

A comprehensive theory of thermionic emission from clean metal surfaces is presented. The theory takes into account the energy band structure of the metal, inelastic scattering due to electron-electron collisions and the thermal vibration of the atoms. We applied the theory to thermionic emission from Cu(100). We calculated the thermally emitted current from this plane as a function of applied field. We find an almost periodic deviation from the Schottky line, similar in nature with that which is observed in emission from polycrystalline emitters [1]. We believe that accurate measurements of the amplitude and phase of these deviations from the Schottky line can, when analysed in the manner described here, provide valuable information on the surface optical potential. We have also calculated the total energy distribution of the emitted electrons for a typical value of the applied field. The dependence of the above measurable quantities on the parameters which enter the theory is analysed and demonstrated by explicit numerical calculations.     

High-temperature current conduction through three kinds of Schottky diodes

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I--V--T measurements ranging from 300 to 523~K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.     

热阴极微波电子枪模拟计算

用模拟计算方法,研究了热阴极微波电子枪的束流动力学行为,采用笛卡尔坐标,编制了准三维模拟计算程序──HOTGUN.计算中除考虑了射频场外,还充分考虑了空间电荷效应(空间电荷场为轴对称场)、肖特基效应及稳态负载效应等.文中给出了HOTGUN程序与PARMELA部分模拟结果及中科院高能所自由电子激光室微波电子枪热测实验台部分实验结果的比较,最后以用于北京自由电子激光器的多腔热阴极微波电子枪为例,给出了详细的HOTGUN程序模拟计算结果.     

Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors

This work elucidates the role of the Schottky junction in the electronic transport of nanometer-scale transistors. In the example of Schottky barrier silicon nanowire field effect transistors, an electrical scanning probe technique is applied to examine the charge transport effects of a nanometer-scale local top gate during operation. The results prove experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on band bending at the Schottky barriers will be shown.     

Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices

Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory.     

Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.     

Electrical parameters retrieval of carbon nanoparticle-based metal semiconductor metal structure by standard methods and beta-ray-induced charge

Semiconducting carbon nanoparticles (CNPs) represent various applications in sensing systems with exceptional electronic properties. The extraction of electronic parameters of a sensor is very important to interpret the sensing characteristics of the electronic devices. This work is concerned with the extraction of electronic parameters such as the ideality factor, the barrier height, the series resistance, and some other diode parameters of a CNP-based metal semiconductor metal structure. The parameters are determined from the experimental data and physical model using the standard current–voltage (I–V) analysis in the frame of the thermionic emission theory, impedance spectroscopy, and other methods. The mobility-lifetime products (μτ) for electrons and holes in CNP micro-wire were determined by beta-ray-induced charge with Schottky contacts.     

Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions

The electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200-500 K. The barrier height and the ideality factor were calculated from current-voltage (I-V) characteristics based on thermionic emission (TE), and found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The observed temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. Such inhomogeneous behavior was modeled by assuming the existence of a Gaussian distribution of barrier heights at the heterostructure interface.     

Mechanism of current leakage through metal/n-GaN interfaces

Detailed current–voltage–temperature (I–V–T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I–V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1×10¹⁷ cm⁻³. A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.     

Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density–voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson–Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler–Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.     

Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

The current–voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current–voltage data of the metal–insulator–semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current–voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal–semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal–insulator–semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal–insulator–semiconductor diodes are analysed and possible mechanisms are discussed.     

Der Schottky-Effekt an reinen Silizium-Oberflächen

The electric field dependence of the work function of silicon was studied in ultra-high vacuum by thermionic emission at temperatures from 1200°K to 1600°K, and by photoemission at room temperature. A surface with isotropic work function was obtained by flashing the silicon samples at 1620°K. The emission current measured as a function of the applied field was found to follow a Schottky law, similar to the behaviour of metals. However, in contrast to the case of a metallic emitter, the slope of the Schottky plot is dependent on the temperature. The slope increases with increasing temperature reaching the value corresponding to a metal just below the melting point. From the shift of photoelectric threshold with electric field we obtain the lowering of the work function at room temperature. The experimental results are discussed in terms of two models for the image potential of a semiconductor. Periodic deviations from the Schottky effect were observed for both thermionic and photoelectric emission.     

用变粒子数PARMELA程序作热场发射微波枪数值模拟计算

本文按Schottky方程给出热场发射微波枪阴极电流之值来确定PARMELA程序在每一时间步长内输入粒子数,使PARMELA程序能用来作热场发射微波枪电子的动力学计算,改善了把PARMELA程序不加修改直接用于热场发射微波枪计算而带来的不合理图象。     

Ni/4H-SiC 肖特基势垒磁场下输运性质的分析

采用高真空电子束蒸发的方法将镍 (Ni)淀积在 4H SiC(0 0 0 1)面上 ,制备出良好的Ni/4H SiC肖特基接触 .研究了Ni/4H SiC肖特基势垒在强磁场和低温下的I -V特性 ,并以热电子发射理论为基础 ,结合弛豫近似玻尔兹曼方程对Ni/4H SiC肖特基势垒在磁场下的输运性质进行了分析和计算 ,发现电流的变化与磁场的平方和电压成线性关系 ,和温度成反比关系 ,与实验结果基本符合     

Schottky barrier height lowering induced by CoSi2 nanostructure

CoSi₂ nanostructures were formed through thermal agglomeration by annealing ultrathin Co film on Si substrate at high temperatures. The characteristics of the Schottky diodes with CoSi₂ nanostructures capped by a Pt layer were measured and fitted using thermionic emission theory. All the diodes have a ideality factor less than 1.1. The results show that the Schottky barrier height of these diodes significantly decreases as the annealing temperature for CoSi₂ agglomeration increases. The barrier height lowering is correlated with the agglomeration of CoSi₂ film and the formation of CoSi₂ nano-islands. The thermal field emission may be the major reason to cause barrier lowering. Although the Schottky contact interface consists of both CoSi₂ nano-islands and Pt film whose individual contact barrier height to Si is very different, the current-voltage-temperature measurements reveal that the interface homogeneity is not degraded as expected. The study demonstrates that the CoSi₂ nanostructures can both lower the Schottky barrier height and form an ideal Schottky contact with a Pt capping layer.     

Theoretical investigation of thermionic and photoelectric emission from semiconductors in the region of schottky deviation

The properties of semiconductors are similar to those of metals at high temperature, a periodic deviation from the Schottky line in thermionic emission from semiconductors is presumedly expected. The theoretical equation derived based on a modified potential model, which contains a classical image force and exchange and correlation forces has proved successful in the analysis of the periodic deviation from the Schottky line in the thermionic emission from the metals. In this paper, the application of a similar approach to the problem of semiconductors is described. The solution has the same characteristics as that of metal, except that two new parameters, effective mass and dielectric constants, are also included. In the similar fashion, the periodic deviation from the Schottky line in the photoelectric emission from semiconductor is also derived. Although the solutions must be tested by comparison with reliable experimental measurements which are not available at present time. However, in view of the good agreement between the theoretical prediction and experimental data for the metal, present solutions might be a good approach.