Fabrication of micro-structure on glass surface using micro-indentation and wet etching process

In order to improve the new micro-fabrication technology using micro-indentation and wet etching, in which the etching rate drastically decrease at the indented area and consequently micro-structure can be formed on the glass surface, the effect of the applying load on the etching rate change was investigated. The extent of the etching rate change was found to be almost constant irrespective of the amount of the applying load. Therefore, the height of the structure could be controlled simply by the etching depth as far as the densified portion remains beneath the glass surface. And some example micro-patterns were fabricated in this process. Various kinds of indentation methods were employed, including scanning a pointed tool under a load and wet abrasive blast. The patterns can be freely drawn by the use of numerical control (NC) machine. Mold pattern can be also applied, which enables drawing many lines simultaneously. In every method, the heights of the patterns were confirmed to be very uniform. This new type of the micro-fabrication method was referred to as “SMIL (Stress Masked Image Lithography)”.     

Laser-assisted micro-forming process with miniaturised structures in sapphire dies

Current results will be presented on developing and miniaturising a novel laser-assisted forming process to manufacture microstructures in metals such as stainless steel and aluminum. Due to its mechanical and optical properties, sapphire is a well-suited material for the micro-forming tool. Because of its high band gap, radiation with small wavelengths in the UV range is required to reach the ablation threshold. Thus, excimer lasers are used for manufacturing the microstructures. On the other hand, its high transmittance for higher wavelengths allows heating of the work-piece through the sapphire die during the micro-forming process, which allows a better form filling. The main goal of these investigations is to identify the scaling effects on micro-formed structures that result from miniaturising microstructures on dies for the development of strategies to overcome obstacles caused by these miniaturisation effects.     

飞秒激光湿法刻蚀微纳制造

飞秒激光微加工作为一种新型微纳制造技术,在复杂三维构型制作方面具有其独特的优势,但激光加工效率问题严重制约了飞秒激光微加工技术走向实际工程应用,提出一种飞秒激光湿法刻蚀微纳制造方法,以提高飞秒激光微加工的效率为突破口,通过调控激光与物质相互作用获得材料的目标靶向改性,进而结合化学湿法刻蚀实现硬质材料上的高效和高精度三维微加工,采用这一方法制作出的微透镜尺寸为80 m,球冠高6.7 m,表面粗糙度小于10 nm。利用这种方法,实现了不同结构与特性的高质量微透镜阵列的超精密制备,在石英内部也实现了螺旋微通道的复杂三维结构,螺旋通道直径为20 m,长径比超过100。     

飞秒激光湿法刻蚀微纳制造

飞秒激光微加工作为一种新型微纳制造技术,在复杂三维构型制作方面具有其独特的优势,但激光加工效率问题严重制约了飞秒激光微加工技术走向实际工程应用,提出一种飞秒激光湿法刻蚀微纳制造方法,以提高飞秒激光微加工的效率为突破口,通过调控激光与物质相互作用获得材料的目标靶向改性,进而结合化学湿法刻蚀实现硬质材料上的高效和高精度三维微加工,采用这一方法制作出的微透镜尺寸为80 μm,球冠高67 μm,表面粗糙度小于10 nm。利用这种方法,实现了不同结构与特性的高质量微透镜阵列的超精密制备,在石英内部也实现了螺旋微通道的复杂三维结构,螺旋通道直径为20 μm,长径比超过100。     

Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

We fabricated Ge-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) by using replacement gate process and selective epitaxial growth. In our method, thin Ge layers were selectively grown on the channel region of MOSFETs after the removal of a sacrificial gate stack structure and the etching of the channel region. Ge layers with a smooth surface and a good morphology could be obtained by using the thin Si_0.5Ge_0.5 buffer layer. Dislocations were observed in the epitaxial layers and near the interface between the epitaxial layer and the substrates. We consider that these dislocations degrade the device performance. Although the electrical characteristics of the obtained MOSFETs need further improvement, our method is one of the promising candidates for the practical fabrication process of Ge-channel MOSFETs.     

Laser-induced backside wet etching of fluoride and sapphire using picosecond laser pulses

Laser-induced backside wet etching (LIBWE) is a promising process for microstructuring of rigid chemical resistant and inert transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated in a number of studies. LIBWE in a time scale of femtosecond and picosecond pulse durations has been investigated only in a few studies and just on fused silica. In the present study LIBWE of fluorides (CaF₂, MgF₂) and sapphire with a mode-locked picosecond (t _p=10 ps) laser at a UV wavelength of λ=355 nm using toluene as absorbing liquid has been demonstrated. The influence of the laser fluence and the pulse number on the etching rate and the achieved surface morphology was investigated. The etching rate grows linearly with the laser fluence in the low and high-fluence ranges with different slopes. The achieved etching rates for CaF₂ and for sapphire were in the same range. Contrary to CaF₂ and sapphire the etching rates of MgF₂ were one magnitude less. For backside etching on sapphire at high fluences smooth surfaces and at low fluences ripples pattern were found, whereas fluoride surfaces showed a trend towards crack formation.     

A laser dry etch process for smooth continuous relief structures in InP

A laser induced etch process is described which uses a pulsed 248 nm KrF excimer laser and Cl₂ atmosphere for the fabrication of monolithic continuously curved reliefs in InP substrate. In a bakeable processing chamber with low base pressure a wide range of laser fluences is available for damage-free etching. Especially, by photothermal heating far above the melting point, mirrorlike smooth surfaces are obtained. The etch rate characteristics are correlated to the maximum surface temperature reached during the laser pulse. The etch rate is independent of pressure and gas flux in the ranges 0.1–10 mbar and 20–300 sccm, respectively. It increases, however, with the background substrate temperature. Etch rates of up to 3.6 nm/pulse or 4.3 lm/min are possible at 20 Hz pulse repetition rate without visible surface damage. The process exhibits a smooth increase of the etch rate from 1 to 3 nm/pulse between 200 and 300 mJ/cm², which could be used for making curved reliefs by optical transmission variations on the projection mask.     

Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching

A method for fabricating deep grating structures on a silicon carbide(SiC) surface by a femtosecond laser and chemical-selective etching is developed.Periodic lines corresponding to laser-induced structure change(LISC)are formed by femtosecond laser irradiation,and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves.Grating grooves with a high-aspect ratio of approximately 25 are obtained.To obtain a small grating period,femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.     

The oxygen ion conductivity of mullite prepared using a wet chemical process

The oxygen ion conductivities of mullite solid solution samples were measured in air by use of the ac complex impedance spectroscopy technique in the frequency range 20 Hz–100 kHz and the temperature range 450–950°C. The results showed that both thermal history and the composition of specimens significantly influenced the conductivity values. These results are discussed in terms of the interaction between oxygen vacancies and aliovalent defect species and the crystal structure and microstructure of mullite samples. As a result of these experiments, it appears that mullite solid solutions would be promising materials for use as oxygen sensors in elevated temperature systems.     

Fabrication of nanostructured silicon surface using selective chemical etching

A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10^–12 M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.     

Investigation of etch characteristics of non-polar GaN by wet chemical etching

We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H₃PO₄ and H₂SO₄ etching media. Different local etching rates between smooth and defect-related surfaces caused variation of the etch pits made by a 1:3 ratio of H₃PO₄/H₂SO₄ etching solution. Analysis results of surface morphology and composition after etching by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that wet chemical etching conditions could show the differences in surface morphology and chemical bonding on the a-plane GaN surface. The etch pits density (EPD) was determined as 3.1 × 10⁸ cm⁻² by atom force microscopy (AFM).     

Fabrication of Al/AlO_x/Al Josephson junctions on silicon and sapphire substrates using a cold-development technique

In order to obtain high-quality superconducting qubits, we employed a cold-development technique, using temperatures down to-20°C, to fabricate Al/AlOx/Al Josephson junctions. Cold development greatly reduced the sensitivity of the electron-beam resist to the developer, eliminated molecules of the electron-beam resist at trench edges, and improved the repeatability and reliability of the nanopatterning process. The fabricated samples have well-defined geometries and increased dose margins, with lateral sizes of 100 nm×100 nm on both silicon and sapphire substrates. Together with the bridge-free fabrication method we used in these experiments, we believe that the cold-development technique can play an important role in quantum information technology that employs superconducting qubits.     

Fabrication of broadband anti-reflective sub-micron structures using polystyrene sphere lithography on a Si substrate

Anti-reflective coatings are widely used on the surfaces of solar cells to increase the efficiency of photoelectric conversion. Sub-wavelength structures have gradually replaced conventional anti-reflective (AR) thin films due to their broadband AR properties. This paper successfully fabricated structures with a variety of surface morphologies on Si substrate using polystyrene sphere lithography in conjunction with two-step inductive coupling plasma (ICP) and high density plasma (HDP) etching processes. We successfully fabricated various sub-micron structures with heights of 700 nm and above. Experimental results show that the sub-micron pyramidal structure has the best anti-reflection performance with the average reflectance effectively suppressed to below 1% across the spectral range of 300–1200 nm.     

Fabrication and characterization of silicon antireflection structures for infrared rays using a femtosecond laser

We focus on IR sensors with lower reflection for the wavelength around 10 μm, strongly awaited for detecting human bodies. A concave structure was designed as a more suitable reflection-free structure for IR light, and an optical system with a femtosecond laser was employed for verification of the effectiveness of the structure. The microstructures prepared through this process were fabricated and optically measured using SEM, FT-IR, and Raman spectroscopy. The measurement revealed that good reflection-free structures were realized for IR sensors with lower reflection for the wavelength of around 10 μm.     

Fabrication of an integrated Raman sensor by selective surface metallization using a femtosecond laser oscillator

We demonstrate that a Raman sensor integrated with a micro-heater, a microfluidic chamber, and a surface-enhanced Raman scattering (SERS) substrate can be fabricated in a glass chip by femtosecond laser micromachining. The micro-heater and the SERS substrate are fabricated by selective metallization on the glass surface using a femtosecond laser oscillator, whereas the microfluidic chamber embedded in the glass sample is fabricated by femtosecond laser ablation using a femtosecond laser amplifier. We believed that this new strategy for fabricating multifunctional integrated microchips has great potential application for lab-on-a-chips.     

Fabrication and characterization of a biomimetic polarization selective lens

Incorporating optical structures on curved lens surfaces can improve performance, consolidate functions, and create novel, miniaturized devices. Although commonly found in biological systems, patterning of micro- and nano-optical structures on curved surfaces is challenging for conventional methods. Previous works have demonstrated the ability to pattern curved surfaces but have done little to create functioning devices. In this Letter, we describe a novel spray-coating technique coupled with interferometric exposure and dry etching to create near-IR wire-grid polarizers on convex lens surfaces. Experimental measurements show extinction ratios of >40:1 and transmission values of >80%, which are comparable to modeled results of similar polarizers on flat surfaces.     

Fabrication of polymer scaffolds for tissue engineering using surface selective laser sintering

A new approach to the fabrication of individual implants and scaffolds for tissue engineering—surface selective laser sintering (SSLS)—is proposed and realized. In contrast to the conventional selective laser sintering, the SSLS method makes it possible to sinter polymer microparticles and melt the near-surface layer rather than the microparticle as a whole. The effect of the laser radiation parameters and the structure and composition of the raw products on the structure and properties of the biomaterials sintered by the laser radiation is analyzed. This approach makes possible both the application of thermally unstable polymers (e.g., polylactides or polylactoglycolides) and the fabrication of scaffolds with incorporated bioactive proteins. The results obtained yield a regular physical basis for a new technology of the fabrication of various polymer scaffolds that represent important materials and elements of modern tissue engineering. The flexibility of the SSLS method is especially important at the stage of investigation of the cell and tissue responses needed for the optimization of the material for a specific application in tissue engineering.     

MgO衬底上YBa2Cu3O7-δ台阶边沿型约瑟夫森结的制备及特性

MgO衬底上的YBa2Cu3O7-δ(YBCO)台阶边沿型约瑟夫森结(台阶结)在高灵敏度高温超导量子干涉器(superconducting quantum interference device,SQUID)等超导器件研制方面具有重要的应用价值和前景.本文对此类YBCO台阶结的制备和特性进行了研究.首先利用离子束刻蚀技术和两步刻蚀法在MgO(100)衬底上制备陡度合适、边沿整齐的台阶,然后利用脉冲激光沉积法在衬底上生长YBCO超导薄膜,进而利用紫外光刻制备出YBCO台阶结.在结样品的电阻-温度转变曲线中,观测到低于超导转变温度时的电阻拖尾现象,与约瑟夫森结的热激活相位滑移理论一致.伏安特性曲线测量表明结的行为符合电阻分路结模型,在超导转变温度TC附近结的约瑟夫森临界电流密度TC随温度T呈现出(TC-T)^2的变化规律,77 K时JC值为1.4×10^5 A/cm^2.利用制备的台阶结,初步制备了YBCO射频高温超导SQUID,器件测试观察到良好的三角波电压调制曲线,温度77 K、频率1 kHz时的磁通噪声为250μΦ0/Hz^1/2.本文结果为进一步利用MgO衬底YBCO台阶结研制高性能的高温超导SQUID等超导器件奠定了基础.