Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode＇s spin polarization, equilibrium value of polarons ratio, interracial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interracial conductance, and enough large electrical field are critical factors for increasing spin polarization.     

有机自旋电子学

文章介绍了有机半导体同自旋电子学相结合的新学科——有机自旋电子学. 着重讨论以下三个方面问题: 有机半导体特别是有机共轭聚合物特性及其载流子性质; 自旋电子学研究热点; 有机自旋电子学研究进展.     

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

For ferromagnetic metal （FM）/semiconductor （SO） structure with ohmic contact, the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated. Based on the general model we established here, spin injection efficiency under different injection current levels is calculated. Under a reasonable high injection current, current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current. An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact, which means that efficient spin injection from FM into SC via ohmic contact is possible. The reported dependence of current polarization on temperature is verified quantitatively. To achieve even larger spin injection efficiency, a gradient doping semiconductor is suggested to enhance the drift current effect.     

Bias Dependence in Spin-Polarized Tunneling of Ferromagnet/Ferromagnetic Insulator (Semiconductor)/Ferromagnet Junctions

Based on the nearly-free-electron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bins dependencies of electron transport properties relate to the magnetic configurations of the junctions.     

Effective Injection of Spins from a Ferromagnetic Metal to the InSb Semiconductor

JETP Letters - Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic...     

Spin-Polarized Transport through a Quantum Dot Coupled to Ferromagnetic Leads and a Mesoscopic Ring

Using an equation of motion technique, we investigate the spin-polarized transport through a quantum dot coupled to ferromagnetic leads and a mesoseopie ring by the Anderson Hamiltonian. We analyze the transmission probability of this system in both the equilibrium and nonequilibrium cases, and our results reveal that the transport properties show some noticeable characteristics depending upon the spin-polarized strength p, the magnetic flux Ф and the number of lattice sites NR in the mesoseopic ring. These effects might have some potential applications in spintronics.     

电泵浦有机半导体激光器的关键技术

采用高品质因子低损耗的光学微腔结构研制了电泵浦脉冲方式工作的有机激光器件。增益介质为Alq₃ : DCJTI薄膜,透明导电IVO薄膜和Al薄膜分别作为阳极和阴极。面发射的激光从阴极侧发出,峰值波长为622 nm,阈值电流密度为860 mA/cm²。讨论了电泵浦有机微腔激光器研制过程中的关键技术。     

Energy Gap and Charge Transfer in Doped Quasi-One-Dimensional π-Conjugated Organic Ferromagnetic

The effects of polarons along main chain and spin-soliton-like along side-radical lattice in doped quasi-one-dimensional π-conjugated organic ferromagnets are studied by selfconsistent method. It is shown that the gap of spin-down and spin-up mid energy bands of the system decreases because new energy levels of localization states appear. The stability of organic ferromagnetic system is weakened with decreasing of the gap. In addition, it is also shown that there is charge transfer between main chain and side-radical lattice of the doped system.     

Experimental Injection Map of Semiconductor Laser Submitted to Filtered Feedback

Optical injection consists in the unidirectional coupling between a “slave” laser (SL) and a “Master” laser (ML). The injected SL may exhibit different behaviors, showing frequency locking, wave mixing, relaxation regimes, period doubling, and chaos. The different regimes may be mapped on a chart where the injected power and the detuning between the slave and the master frequencies are varied. In this paper, a detailed overview of the regimes are given when the SL is submitted to both optical injection and filtered optical feedback. This last coupling is realized thanks to an extended cavity, which includes a frequency filter. When the SL is operating far from threshold (4 I_th), typical regimes mentioned for feedback-free laser are observed for all the external-cavity modes. On the contrary, when the SL operates close to threshold (1.5 I_th), it is shown that the dynamics is wealthier. New regimes, as one for which simultaneously chaos and locking occur, can be identified, in comparison to the case of a single-frequency SL.     

极化子比率变化对自旋注入有机半导体性质的影响

从自旋扩散方程和欧姆定律出发研究了铁磁层到有机半导体的自旋注入,得到了系统的电流自旋极化率。有机半导体中的载流子为自旋极化子和不带自旋的双极化子,极化子比率在有机半导体内随输运距离变化。通过计算发现匹配的铁磁和有机半导体电导率有利于自旋注入;通过调节界面电阻自旋相关性,电流自旋极化率可获得很大程度提高;极化子比率衰减速率对有机半导体电流自旋极化率具有非常重要的影响。     

外注入非制冷式FP半导体增益开关激光器产生低抖动光脉冲的实验研究

报道了低成本、非制冷法布里-玻罗腔半导体增益开光激光器稳定地产生超短脉冲的实验研究.通过使用外部连续光注入,增益开光激光器的脉冲抖动得到了有效的抑制.实验结果表,明当选择合适功率的连续光注入到非制冷半导体增益开关激光器腔内,可以稳定地产生脉宽26 ps、抖动低于400 fs、重复频率2.5 GHz的脉冲序列.     

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.     

有机场效应晶体管的非线性注入模型

有机场效应晶体管(Organic field effect transistor,OFET)的非线性特性是指其输出特性曲线在较低的漏极电压下出现类似于二极管的电压电流特性曲线,这种现象在有机场效应晶体管的实验研究中极为常见。Simonetti等通过引入随栅极电压变化的迁移率提出了模型并成功解释了这一现象,但实验中从器件转移特性得出的迁移率通常与栅极电压无关。本文通过引入常数迁移率对该模型进行改进,运用改进的模型研究了影响OFET非线性特性的主要因素,并对如何更加准确地获得器件参数进行了探究。     

柠檬酸钾电子注入层对有机电致发光器件的影响

使用柠檬酸钾(C₆H₅K₃O₇)作为电子注入材料,制备了多层有机电致发光器件。当柠檬酸钾阴极修饰层厚度为0.5 nm时,得到3.6 cd/A 的发光效率,高于0.5 nm LiF作阴极修饰层时的发光效率(2.5 cd/A) 。器件的开启电压相比0.5 nm LiF作阴极修饰的器件降低了0.5 V。实验结果表明,柠檬酸钾(C₆H₅K₃O₇)是一种良好的电子注入材料。     

Turn-on Delay of Semiconductor Lasers and Accompanying Time Evolution of Carriers

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基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征

采用旋涂法预先在SiO₂衬底表面形成一层聚（4-乙烯基苯酚）（PVP）作为表面修饰层,以喷墨打印的6,13-双（三异丙基甲硅烷基乙炔基）并五苯（TIPS并五苯）作为有源层制作有机薄膜晶体管,有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极,形成底栅顶接触结构的有机薄膜晶体管（OTFT）器件。作为对比,在未经过表面修饰的SiO₂衬底上采用相同条件打印TIPS并五苯薄膜晶体管,发现在经过PVP修饰的SiO₂衬底上打印的单点厚度更均匀,咖啡环效应被抑制或被消除;而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大,相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT,器件在饱和区的平均场效应迁移率达到了0.065 cm²·V^-1·s^-1;而直接在SiO₂衬底上制作的器件,相应的平均场效应迁移率仅为0.02 cm²·V^-1·s^-1。     

基于聚(4-乙烯基苯酚)衬底修饰层喷墨打印的小分子有机半导体薄膜制备和表征

采用旋涂法预先在SiO2衬底表面形成一层聚(4-乙烯基苯酚)(PVP)作为表面修饰层,以喷墨打印的6,13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS并五苯)作为有源层制作有机薄膜晶体管,有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极,形成底栅顶接触结构的有机薄膜晶体管(OTFT)器件。作为对比,在未经过表面修饰的SiO2衬底上采用相同条件打印TIPS并五苯薄膜晶体管,发现在经过PVP修饰的SiO2衬底上打印的单点厚度更均匀,咖啡环效应被抑制或被消除;而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大,相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT,器件在饱和区的平均场效应迁移率达到了0.065 cm2·V-1·s-1;而直接在SiO2衬底上制作的器件,相应的平均场效应迁移率仅为0.02 cm2·V-1·s-1。     

氟化钇电子注入层对OLED器件性能的影响

利用氟化钇(YF3)代替Li F作为电子注入层材料,以金属铝作为阴极,制备了有机电致发光器件(OLED)。实验结果表明:适当厚度的YF3电子注入缓冲层可以增强阴极的电子注入能力,使得电子和空穴的浓度更加平衡,有效地提高器件的电致发光性能。其中,1.2 nm厚YF3的器件具有最小的起亮电压2.6 V,最高的电流效率8.52 cd·A-1,最大的亮度36 530 cd·m-2。最大亮度和电流效率与Li F参考样品相比,分别提高了39%和53%。     

双空穴注入的绿色磷光有机电致发光器件

制作了一种新型绿色磷光有机电致发光二极管。器件结构为ITO/HAT-CN(x nm)/MoO3(30 nm)/NPB(40 nm)/TCTA(10 nm)/CPB∶GIr1(30 nm,14%)/BCP(10 nm)/Alq3(25 nm)/LiF(1 nm)/Al(100 nm),其中X=0,8,10,12,14,15 nm。电流密度-电压-亮度特性表明该结构有利于降低驱动电压和增加器件亮度。当HAT-CN厚度为12 nm时,器件的最高亮度可以达到32 480 cd/m2,起亮电压为3.5 V左右,发光效率为24.2cd/A。所设计的空穴型器件证明该器件结构具有很好的空穴注入和传输特性。     

有机材料激子发光的温度特性

基于实验和理论模拟研究了12~320 K温度范围内八羟基喹啉铝[tris-(8-hydroxyquinoline)aluminum,Alq]和一种高效红光染料甲基2叔丁基6(1,1,7,7四甲基久咯呢定基9烯基)4H 1吡喃[4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran,DCJTB]的光致发光(photoluminescence,PL)随温度的变化,提出三种不同电荷分离程度的激子参与的Alq的稳态光致发光过程,通过拟合参量得到了三种激子的能量差值和辐射复合几率之比,观察并解释了DCJTB发光光谱从200 K以下到室温的升温过程中发生的蓝移。认为变温光致发光有可能用于评估材料的发光和导电性能,比较并讨论了有机和无机发光材料激子发光的温度特性,认为低温下小分子发光材料倾向于分子态,随温度升高逐渐向半导体态转变,Alq在150~190K之间开始发生这种转变,而DCJTB则从300~320 K开始。