Additional Raman Scattering Mechanism due to Transverse Polar Modes

Longitudinal polar modes generate a macroscopic electric field in piezoelectric crystals and cause an additional mechanism of Raman scattering.The classical theory holds that transverse polar modes cannot produce such an additional mechanism.Our quantum theory shows that there is an additional Raman scattering mechanism arising from the electro-optic effect of transverse polar modes.     

ZnO晶体的偏振拉曼散射的深入研究

利用拉曼选择定则,设计了ZnO单晶的直角偏振几何配置。在室温下测量了ZnO单晶的各种振动模式的偏振拉曼散射光谱。与原先的文献相比较,初步讨论了各种振动模式的线宽和强度的变化原因。除ZnO晶体中包括非极性和极性拉曼基频振动,准横光学和准纵光学模式和振动属性被指认外,它们的高阶拉曼散射模式首先被确定。本研究结果为深入了解ZnO晶体和薄膜的宏观性质和微观结构提供了依据。     

One phonon resonant Raman scattering in a quantized spherical film

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with surface optical (SO) phonon modes in a semiconductor quantized spherical film. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study the selection rules for the processes. Singularities are found to be size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectrum. A discussion of the phonon behavior for the films with large and small size is presented. The numerical results are also compared with that of experiments.     

Surface optical phonon—assisted electron Raman scattering in a semiconductor quantum disc

We have carried out a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the surface optical phonon modes in a semiconductor quantum disc.electron states are considered to be confined within a quantum disc with infinite potential barriers.The optical phonon modes we have adopted are the slab phonon modes by taking into consideration the Frohlich interaction between an electron and a phonon.The selection rules for the Raman process are given.Numerical results and a discussion are also presented for various radii and thicknesses of the disc,and different incident radiation energies.     

Defects in crystals studied by Raman scattering

Raman studies of crystal defects are reviewed. Raman spectroscopy is a powerful technique and has been used widely for investigating disordered structures. The degree of disorder in a crystal is quantitatively evaluated in terms of the phonon correlation length. The asymmetric Raman line shapes in defective crystals such as microcrystals, ion-implanted semiconductors are well reproduced by the spatial correlation (SC) model. The effect of alloying induced-potential fluctuations on Raman scattering is also explained within the framework of the SC model. In disordered graphite, the in-plane phonon correlation length is obtained from the relative intensity ratio of the disorder induced peak. The initial lattice disordering rates and the relaxation rates of disorder are determined, using real-time Raman measurements during ion irradiation in a scale of seconds. In this way, the phonon confinement due to the local defects is observed in the kinetic manner. Localized vibrational modes of defects in crystals are also described. In particular, Raman observation of the hydrogen molecule in crystalline semiconductors is discussed in detail.     

Stimulated Raman scattering and spontaneous Raman solitons in ammonia

In this study we report the first observation of spontaneous Raman solitons in stimulated Raman scattering (SRS) by the gas NH₃. The scattered radiation is called Stokes radiation. Raman solitons are of considerable interest, because their existence can be explained by quantum-mechanical fluctuations of the electromagnetic field in vacuum. We have observed spontaneous Raman solitons in a forward SRS configuration for two different molecular transitions of NH₃, the laser emissions at 58 μm and 72.6 μm wavelength. These are optically pumped by 10 μm CO₂-laser pulses with a duration of 100 ns and an energy of 150 mJ. Spontaneous Raman solitons are short spikes in the pump pulse which occur during its depletion. Their origin is the rapid π phase change of the Stokes seed. In contrast to other laboratories we have used single-pass cells. Thus, we have succeeded in observing multiple spontaneous Raman solitons during one pump pulse. Previous experiments with multi-pass cells never showed multiple solitons. Since multiple spontaneous Raman solitons have already been reported in an earlier experiment with a single-pass cell filled with hydrogen at high pressure, we conclude that such multiple Raman solitons can be observed mainly in this type of gas cell. Subsequently, we have performed statistical measurements on the delay time and the height of the spontaneous Raman solitons in the depleted pump pulse for the 58 μm-NH₃ emission. We have compared these statistics with theory and equivalent experimental results of other laboratories. They are in good agreement with the assumption that quantum-mechanical fluctuations are the origin of spontaneous Raman solitons. The most recent theories postulate that the origin of the formation of spontaneous Raman solitons can be explained by the rapid π phase change of the Stokes seed as well as that of the laser or polarization wave. Therefore, we have determined the phase of the spontaneous Raman solitons relative to the depleted pump pulse. Although, such changes of sign of the relative phase have already been observed in an earlier SRS experiment with hydrogen at high pressure, we did not detect any in our experiment. Therefore, we conclude that in this experiment the π phase change occurs in the Stokes or polarization wave.     

Resonant two‐magnon Raman scattering in high‐Tc cuprates

Resonance enhancement of one‐phonon, two‐phonon, and two‐magnon Raman scattering in a general, exactly solvable, multiband model is explained in a way that is in accordance with the general analytical properties of the total optical conductivity tensor. Using this approach, the charge‐transfer limit of the Emery three‐band model is examined to explain resonance enhancement of the two‐magnon Raman spectra of high‐T_c cuprates, which is found in experiments to be of 3 orders of magnitude. While previous Raman and optical conductivity analyzes of the cuprates, based on the single‐band Hubbard model, are found to be consistent with the picture where one hole per one CuO₂ unit is localized on the Cu ion, the present three‐band approach allows the study of the opposite, strong copper‐oxygen hybridization limit, which is found to be in agreement with the results of nuclear magnetic resonance (NMR) and one‐phonon Raman scattering experiments. Copyright © 2010 John Wiley & Sons, Ltd.     

Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon--plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×10¹⁸ cm^-3 and 8×10¹⁸ cm^-3 with a carrier mobility of 30--55 cm²/(V·s) for n-type 4H-SiC substrates and 1×10¹⁶--3×10¹⁶ cm^-3 with mobility of 290--490 cm²/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10¹⁶ cm^-3 with mobility of 380 cm²/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.     

First-order Raman scattering in a free-standing GaN nanowire with ring geometry

We have investigated one phonon resonant Raman scattering in GaN nanowires (NWs) with ring geometry. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules are studied. For the GaN NWs with small radius, results reveal that the main contribution to the differential cross-section (DCS) stems from the surface optical (SO) phonons especially from the high-frequency of SO phonons, with a minor contribution from the longitudinal optical (LO) phonons. Meanwhile, dispersions of the two branches of the SO phonon modes are obvious when the wire is thin. Moreover, compared to GaAs NWs, the GaN NWs make more contribution to the DCS in the small quantum size.     

Whispering gallery modes and effect of coating on Raman spectra of single microspheres

Raman spectra and fluorescence of BaTiO₃ and silica microspheres of different sizes have been studied. The observed whispering gallery modes (WGMs) have been assigned using theoretical simulations based on the Lorenz–Mie theory. The WGMs are found to have selective enhancements in the Raman spectra. The variations in the Raman spectra with the radial position of the excitation spot and excitation wavelength have been correlated with the morphology‐dependent internal field distributions of the microspheres. The effect of a thin dye coating on the fluorescence and Raman spectra was studied, and a coating thickness of ∼200 nm was estimated from the theoretical simulation of experimentally observed data based on the Aden and Kerker theory. Copyright © 2011 John Wiley & Sons, Ltd.     

KDP晶体拉曼散射角度特性

利用群理论详细分析了磷酸二氢钾(KDP)晶体的拉曼振动模式,得出了其拉曼振动模的归类。并采用拉曼光谱仪测量了Z切退火KDP晶体X(ZZ)珡X,Z(XY)珚Z和Y(XY)X三种散射配置和未退火KDP晶体Z(XY)珚Z配置下的拉曼光谱。根据拉曼选择定则得出X(ZZ)珡X,Z(XY)珚Z和Y(XY)X散射配置下的拉曼峰分别对应A1,B2(LO),B2(TO)对称类振动模,但在Z(XY)珚Z配置下的拉曼光谱中除了B2模,还观察到了A1模,而在Y(XY)X配置下的拉曼光谱中只有B2模,且退火和未退火晶体Z(XY)珚Z配置下的拉曼光谱无明显差别,此结果表明KDP晶体的对称性降低,在背向散射时A1模也具有角度特性,但与晶体的内应力无关,这是由KDP晶体内部结构决定的。     

Comparative Analysis of Temperature-dependent .Raman Spectra of GaN and GaN/Mg Films

The Raman spectra of unintentionally doped gallium nitride (GaN) and Mg-doped GaN films were investigated and compared at room temperature and low temperature. The differences of E₂ and A₁(LO) mode in two samples are discussed. Stress relaxation is observed in Mg-doped GaN, and it is suggested that Mg-induced misfit dislocation and electron–phonon interaction are the possible origins. A peak at 247 cm⁻¹ is observed in both the Raman spectra of GaN and Mg-doped GaN. Temperature-dependent Raman scattering experiment of Mg-doped GaN shows the frequency and intensity changes of this peak with temperature. This peak is attributed to the defect-induced vibrational mode. Translated from Chinese Journal of Semiconductors, 2005, 26(4) (in Chinese)     

Doping dependence of the electronic Raman spectra in cuprates

We report electronic Raman scattering measurements on Bi₂Sr₂(Y_1−xCa_x)Cu₂O_8+δ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to be very different in B_1g and B_2g geometries. Also, we do not find evidence of any significant variation in the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B_2g upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the doping level.     

Very-short-wavelength collective modes in fluids

The existence of very-short-wavelength collective modes in fluids is discussed. These collective modes are the extensions of the five hydrodynamic (heat, sound, viscous) modes to wavelengths of the order of the mean free path in a gas or to a fraction of the molecular size in a liquid. They are computed here explicitly on the basis of a model kinetic equation for a hard sphere fluid. At low densities all five modes are increasingly damped with decreasing wavelength till each ceases to exist at a cutoff wavelength. At high densities the extended heat mode softens very appreciably for wavelengths of the order of the size of the particles and becomes a diffusion-like mode that persists till much shorter wavelengths than the other modes. Except for the shortest wavelengths these collective modes and in particular the heat mode dominate the dynamical structure factorS(k, ) for all densities. The agreement of the theory with experimentalS(k, ) of liquid Ar seems to imply that very-short-wavelength collective modes also occur in real fluids.     

Double resonance Raman effects in InN nanowires

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The $ E_1 ({\rm LO})$ phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward fre‐ quency shift that can be explained by Martin's double resonance. The $ E_1 ({\rm LO})$ /$ E_2^h $ intensity ratio increases with the excitation wavelength more rapidly than the $A_1 ({\rm LO})/E_2^h $ ratio measured in InN thin films. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

利用拉曼孤子实现宽带拉曼脉冲压缩

从拉曼散射方程的出发,研究了利用拉曼孤子实现宽带拉曼脉冲压缩的机制,发现孤子脉冲的宽度随拉曼增益的增加减小,并与 运光的脉冲形状及相位结构有关。实验中利用ＸｅＣｌ激光／Ｈ２系统初步实现了５０％的压缩率,并将实验结果与理论进行了比较。     

Incommensurate SDW in cuprates

The incommensurate antiferromagnetism (AF) in metallic underdoped cuprates is interpreted with several complementary approaches, unified by a consistent disambiguation of the copper and oxygen degrees of freedom. Collinear (with respect to the copper lattice) peaks in the neutron response at low frequency are due to the oxygen-dominated arcs, while the diagonal peaks at high frequency or low doping come from the copper-dominated vH points. The latter switch from collinear to diagonal as the frequency increases. The direct O–O overlap induces an AF which is weaker and thermodynamically preferred to the AF of strongly localized copper sites, and which coexists with Fermi arcs. A theoretical understanding of the strongly k-dependent$\mathbf{k}\mathrm{-}\mathrm{dependent}$ AF gap observed in ARPES and STM measurements is proposed.     

Short-range spin correlations and pseudogap in underdoped cuprates

In this paper we show that local spin-singlet amplitude with d-wave symmetry can be induced by short-range spin correlations even in the absence of pairing interactions. In the present scenario for the pseudogap, the normal state pseudogap is caused by the induced local spin-singlet amplitude due to short-range spin correlations, which compete in the low energy sector with superconducting correlations to make T_c go to zero near half-filling.     

铁电体KDP软模时间分辨的冲击受激拉曼散射

利用飞秒脉冲激光在时域内对铁电体KDP(KH2 PO4 )进行冲击受激拉曼散射 (ISRS)实验研究 ,在激发光束夹角θ=0 .38°情况下 ,发现了KDP软模与光耦合所形成的电磁耦合波子弱衰减低频振荡的冲击受激拉曼散射响应信号 ,其周期随着温度接近相变温度Tc 而逐渐增大 ,其特性可用铁电体软模在Tc 温度附近频率的变化规律ω2 =α0 (T -Tc)来描述 ,这里系数α0 ≈ 16× 10 2 0 s2 K- 1 。