Preparation and optical properties of Bi2S3 microcrystallite doped glass and thin film by the sol-gel process

The Bi₂S₃ microcrystallite doped thin films and glass lumps have been successfully prepared by the sol-gel process from the hydrolysis of a complex solution of Si(OC₂H₅)₄ Bi(NO₃)₃ · 5H₂O and SC(NH₂)₂, and the size of the microcrystallites in glass heated for different times at 400°C was decided by the method of HRTEM. The optical transmission valley shifted towards longer wavelengths with longer heat-treatment time at 500°C in the Bi₂S₃ doped thin films, showing the experimental evidence of quantum size effects. The red-shift of emission peaks in luminenscence spectrum excited with longer wavelength is attributed to the broad distribution of particle size in Bi₂S₃ doped glass.     

Electrochemical and photoelectrochemical characterization of CuFeO2 single crystal

CuFeO₂ single crystal, synthesized by the flux method, is a narrow band gap semiconductor crystallizing in the delafossite structure with a direct optical transition of 1.63 eV. The oxide exhibits a good chemical stability; the semi-logarithmic plot gave an exchange current density of 0.60 μA cm⁻² in KCl (0.5 M) electrolyte. CuFeO₂ shows p-type conductivity; the origin of acceptors Cu²⁺ results from oxygen insertion in the layered lattice where most of excess holes are trapped in surface-polaron states. The electrochemical study is confined in the (a,b) plane and reversible oxygen intercalation is evidenced from the intensity potential characteristics. The detailed photoelectrochemical studies have been reported for the first time on the single crystal. The photocurrent is ascribed to the transfer Cu⁺:3d→3d. The capacitance measurement (C⁻²–V) shows a linear behavior from which a flat band potential of +0.54 V_SCE and a density N _A of 1.60 × 10¹⁸ cm⁻³ were determined. The valence band, located at 5.33 eV below vacuum, is made up of Cu-3d orbital typical of delafossite oxides. The Nyquist plot shows a semicircle attributed to a capacitive behavior with a low density of surface states within the gap. The centre is localized below the real axis with an angle of 16.2° ascribed to a constant phase element (CPE), a single barrier of the junction CuFeO₂/electrolyte and one relaxation time of the electrical equivalent circuit.

Study of the crystallization pathway of Na0.5Bi0.5TiO3 thin films obtained by chemical solution deposition

Na_0.5Bi_0.5TiO₃ (NBT) thin films were fabricated by a chemical solution deposition (CSD) method. A route involving the reaction between sodium and bismuth acetates and titanium n-butoxide was used to synthesise the different precursor solutions. The thermal decomposition and crystallization pathways of different modified precursors have been studied by thermal analysis and X-ray diffraction techniques. As a consequence of the modification of the precursor solutions and their different thermal behaviour, the nucleation of the stable perovskite phase happens at different temperatures depending on each case but is found to be at temperatures as low as 500 °C. For the thin film processing, the drying and pyrolysis temperatures were chosen according to the thermogravimetric data to minimize the strain resulting from the shrinkage of the film during the elimination of solvents and organic ligands. The crystallization process was studied and the experimental results are discussed in terms of structural, microstructural and electrical features investigated by field-emission scanning electron microscopy, atomic force microscopy in tapping and piezo-force modes and X-ray diffraction.     

微波水热辅助电沉积法制备Bi_2S_3薄膜

采用微波水热辅助电沉积法在ITO导电玻璃表面制备了形貌均匀具有纳米棒、纳米板状结构的Bi2S3薄膜。利用XRD、XPS、场发射扫描显微镜(FESEM)、TEM和UV-Vis-NearIR对薄膜的结构、形貌、光学性能进行了表征。结果显示微波水热辅助电沉积法制备的Bi2S3薄膜具有良好的结晶性能;随着微波水热温度的提高,所制备Bi2S3薄膜的结晶性能先增强后降低,合适的温度是130℃。与电沉积法制得薄膜相比,采用微波水热辅助电沉积法制得Bi2S3薄膜的禁带宽度由1.44eV增加到1.84eV。     

Solid State Phase Formation in the Bi2O3-PbO-CaO System

Following our previous research, this work is dedicated to the study of phase formation in the subsolidus domain of the Bi₂O₃-PbO-CaO system. Former investigations performed by DTA/TGA and XRD have pointed out that under non-isothermal conditions only the formation of binary compounds occurs. Under such conditions these compounds could be non-equilibrium phases. In order to establish the conditions of formation of equilibrium phases, a study of the Bi₂O₃-PbO-CaO system, in isothermal conditions, was carried out. The results obtained in isothermal conditions have confirmed the presence of Bi₂O₃-rich solid solutions and Ca₂PbO₄ as main equilibrium phases. An attempt to represent the phase relations of the mentioned system at 700°C should be equally mentioned. This revised version was published online in July 2006 with corrections to the Cover Date.     

Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Semiconducting copper sulphide (Cu₂S) thin films have been deposited on various substrates (SnO₂:F/glass, glass) by the simple and economical chemical bath deposition technique. The depositions were carried out during a deposition time of about 32.5 min in the pH range of 9.4 to 11. The synthesized Cu₂S thin films were characterized using various techniques without any annealing treatment. X-ray diffraction study shows that Cu₂S films exhibit the best crystallinity for pH = 10.2. For this pH value, Auger electron spectroscopy investigations show that Cu₂S thin films grown on an SnO₂/glass substrate exhibit stochiometric composition with [Cu]/[S] concentrations ratio equal to 2.02. Using the Kelvin method, the work function difference (Ф_material– Ф_probe) for the Cu₂S films deposited on SnO₂/glass substrates at the optimum pH value was found to be equal to 145 meV. Hall measurements confirm the p-type electrical conductivity of the obtained films. The electrical resistivity was of the order of 3.85 × 10⁻⁴ Ω-cm. The transmission and reflection coefficients vary in the range of [35–60] % and [5–15] % respectively, in the visible range, and the band gap energy is about 2.37 eV.     

Kinetics of the decomposition of calcium carbonate in the presence of Bi2O3

Former studies concerning the formation of the compounds in the pseudobinary systems of Bi₂O₃-MO type (M =Ca, Sr, Ca+Sr) have shown that the reaction which occurs with the highest rate is that between Bi₂O₃ and CaO. In the present work CaCO₃ was used as CaO source. We carried out an investigation of the thermal decomposition of CaCO₃ in the presence of Bi₂O₃ in comparison with the decomposition of pure CaCO₃.The presence of Bi₂O₃ exerts a complex influence on the CaCO₃ decomposition acting on the nucleation as well as on the diffusion of CO₂. The decomposition of the samples with low Bi₂O₃ content follows the mechanism of a contracting sphere. A change from surface nucleation to bulk nucleation is recorded for higher amounts of Bi₂O₃.     

Physico-chemical properties of CuO−Bi2O3 mixed oxides and modification of their hydrogen reduction reactivity by ionizing radiation

This paper describes a study on some physico-chemical properties of CuO?Bi₂O₃ mixed oxides of various composition and their reactivity during hydrogen reduction in the range 290–460°C. Depending on the composition, the changes in the morphology of the samples, their specific surface areas, phase composition of Bi₂O₃ as well as the change in the amount of chemisorbed surface oxygen (specific surface oxidation ability) were found. The last mentioned parameter is strongly affected positively or negatively (depending on the dose absorbed) by the pre-irradiation with gamma-rays and accelerated electrons. Either reduction of CuO or consecutive reduction of both components with a maximum rate on the surface or sub-surface layers of grain, proceed in different temperature ranges. The retarding effect of liquid bismuth is partially compensated for by the sponging and trapping effects, so that the overall reduction rate changes non-monotonously with the composition of the samples. Pre-irradiation leads in all cases to the lowering of reduction rate, which can be correlated with the increase in the concentration of strongly bound oxygen forms, creating centres of donor hydrogen chemisorption. The effect of gamma-radiation appears to be function of the threshold dose absorbed.     

Investigation of RuO2-IrO2-SnO2 thin film evolution

The thermal evolution process of RuO₂–IrO₂–SnO₂ mixed oxide thin films of varying noble metal contents has been investigated under in situ conditions by thermogravimetry-mass spectrometry (TG-MS), infrared emission spectroscopy (IR) and cyclic voltammetry (CV). The gel-like films prepared from aqueous solutions of the precursor compounds RuOHCl₃, H₂IrCl₆ and Sn(OH)₂(CH₃COO)_2–xCl_x on titanium metal support were heated in an atmosphere containing 20% O₂ and 80% Ar up to 600°C. Chlorine evolution takes place in a single step between 320 and 500°C accompanied with the decomposition of the acetate ligand. The decomposition of surface species formed like carbonyls, carboxylates and carbonates occurs in two stages between 200 and 500°C. The temperature of chlorine evolution and that of the final film formation increases with the increase of the iridium content in the films. The anodic peak charge shows a maximum value at 18% iridium content.     

Phase formation and thermal stability of the compounds in the Bi2O3-PbO system

The scientific interest for the Bi₂O₃-PbO system has increased due to the importance of the PbO in the high-T _c superconducting phase formation in the Bi₂O₃-SrO-CaO-CuO system. Also Bi₂O₃-PbO system contains compounds with some specific semiconductor and dielectric properties and Bi₂O₃-based solid solutions are well known as high oxygen ion conductors.Previously, several low melting defined compounds have been identified in the system: 6Bi₂O₃·PbO; 3Bi₂O₃·2PbO; 4Bi₂O₃·5PbO; 4Bi₂O₃·6PbO and Bi₂O₃·3PbO.This work deals with the phase formation and thermal stability of these compounds. Under non-isothermal conditions, in all mixtures regardless of the Bi₂O₃/PbO ratio, the compound 6Bi₂O₃·PbO is preferentially formed, followed by the compound 4Bi₂O₃·5PbO. The formation of the compound 4Bi₂O₃·6PbO was not confirmed while the formation of the compound Bi₂O₃ 3PbO occurs through a complex mechanism which includes an intermediate step in which a solid solution with the litharge structure was identified. Under isothermal conditions in the same temperature range the tendency to form the stoichiometric compounds increases. All compounds form, decompose and melt at temperatures between 530–780°C.     

Surface modification of thermoplastics by atomic layer deposition of Al2O3 and TiO2 thin films

Al₂O₃ and TiO₂ thin films were deposited by atomic layer deposition at 80-250 °C on various polymeric substrates such as polymethylmethacrylate (PMMA), polyetheretherketone (PEEK), polytetrafluoroethylene (PTFE) and ethylenetetrafluoroethylene (ETFE). The films were studied with FESEM, EDX, XRD, contact angle measurements and adhesion tests. The film growth rates on the thermoplastics were close to the corresponding growth rates on Si substrates. The adhesion of the films was good on PEEK and poor on PTFE. All coated surfaces showed lower water contact angles than the uncoated thermoplastics. Furthermore, the water contact angles on all TiO₂-coated surfaces decreased upon UV illumination, most efficiently with crystalline TiO₂ coatings.     

Understanding and improving the deposition conditions of SiO2 thin films obtained by ultrasonic sol-gel procedure

Sol-gel deposition of an ultrasonically atomized aerosol has been proven to be a convenient thin film deposition method. Flexibility of the ultrasonic process allows the use of a large range of source solutions. In this paper we describe and discuss the deposition conditions of SiO₂ films. The chemical parameters are contemplated and we discuss the influence of ultrasonic waves on the reliability of our process. Source solutions and SiO₂ film properties are studied by viscosimetry, Fourier Transform IR spectroscopy and spectroscopic ellipsometry.     

Synthesis and thermal decomposition of bismuth peroxotitanate to Bi2Ti2O7

Bi-peroxotitanate was synthesized by a peroxo method and after thermal decomposition Bi₂Ti₂O₇ was obtained. DTA, TG and DSC curves of Bi₂[Ti₂(O₂)₄(OH)₆]5H₂O were recorded and used to determine isothermal conditions suitable for obtaining the intermediate samples corresponding to the phases observed during the thermal decomposition. The samples were identified by quantitative analysis, IR spectroscopy and X-ray analysis. The experimental results were used to propose a mechanism of thermal decomposition of the investigated compound to a nanosized Bi₂Ti₂O₇. The optimum conditions were also determined for obtaining Bi₂Ti₂O₇, which is applicable for piezosensors.     

Thick Fe2O3, Fe3O4 films prepared by the chemical solution deposition method

Fe₂O₃, Fe₃O₄ films have been prepared from Fe(OCH₂CH(CH₃)₂)₃–(CH₃)₂CHCH₂OH–2.2′-diethanola- mine (DEA)–poly(vinylpyrrolidone) (PVP) solutions by the spin-(SC) and dip-coating (DC) technique on SiO₂ and Si substrates. The maximum film thickness achieved without crack formation has been increased by incorporation of PVP (relative molecular weights 40000 and 360000) into the precursor solution. The stability of the precursor solutions was remarkably increased by addition of DEA. Compact, dense, and crack-free Fe₂O₃ films with thicknesses 900 nm (DC), 450 nm (SC), have been obtained via single-step deposition cycle. Higher-molecular-weight PVP has been more effective in increasing the thickness. The minimum concentration of DEA, which results in pronounced increase of solutions stability, is about R _P (n(DEA)/n(Fe) = 0.1). The high content of carboneous residue in the pyrolysed Fe₂O₃ films promotes the formation of Fe₃O₄ films via reduction in a gas flow of H₂/N₂ gas mixture. Microstructure, surface morphology, and magnetic properties of the films have been also investigated using SEM, AFM, and SQUID, respectively.     

表面活性剂控制合成不同形貌的纳米硫化铋

采用硝酸铋和硫脲为反应物,通过添加不同的表面活性剂如Triton X-100+OP-10、TX-10、Triton X-100,用回流法合成了硫化铋纳米花。所得产物用XRD、EDS、TEM、SAED、SEM以及UV-Vis进行了表征。结果表明,经85～110 ℃回流反应3 h,可以得到结晶良好、具有各种形貌的正交晶相的硫化铋纳米花。经计算,其晶胞参数为a=0.439 34 nm, b=0.965 64 nm, c=1.118 5 nm。UV-Vis分析表明,硫化铋     

Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi_0.92La_0.08FeO₃ (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 μC/cm² and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.     

Photoelectrochemical behavior of coupled SnO2|CdSe nanocrystalline semiconductor films

A photoelectrochemical cell with a coupled SnO₂|CdSe nanocrystalline semiconductor electrode has been prepared by sequential deposition of SnO₂ and CdSe films onto an optically transparent electrode (OTE), and its photoelectrochemical behavior has been studied. The results show that the coupling of CdSe with SnO₂ leads to an improvement in the performance of OTE|SnO₂|CdSe over OTE|CdSe cells in terms of increased incident photon-to-current conversion efficiency, increased stability and smaller reversal of current. The favorable positioning of the energy bands of SnO₂ and CdSe is responsible for the above observations. Various photoelectrochemical parameters of the OTE|SnO₂|CdSe cell obtained for an incident light power of 0.31 mW cm⁻² at 470nm, are as follows: I_sc ≈ 25–30 μA cm⁻², V_oc ≈ 0.5–0.6 V, ƒƒ = 0.47 and a power conversion efficiency of about 2.25%.     

简单的溶剂热法制备分层的碲化铋微米结构

采用简单的溶剂热法制备出高纯度的由纳米片自组装而形成的碲化铋微米结构。在碲化铋的形成中,乙二醇不仅作为溶剂,而且还作为还原剂。研究发现,聚乙烯吡咯烷酮(PVP)和硝酸在碲化铋的形成中起到了很重要的作用。通过X-射线衍射(XRD)、X-射线光电子能谱(XPS)、扫描电镜(SEM)、透射电镜(TEM)、高分辨透射电镜(HRTEM)、选区电子衍射(SAED)对其进行表征及研究。最后,利用时间演化实验对碲化铋的形成机理进行了探讨。     

溶剂热法制备Bi2S3纳米材料

0引言纳米材料具有特殊的结构和性能,可广泛应用于化学、物理学、电子学、光学、机械和生物医药学等领域[1￣5]。其中一维或准一维纳米结构体系或纳米材料的研究既是研究其它低维材料的基础,又与纳米电子器件及微型传感器密切相关,是近年来国内外研究的前沿[6￣9]。近年来,人们虽然做了许多尝试来制备一维纳米结构材料,但合成这类材料特别是合成半导体一维纳米材料仍然是一个巨大的挑战。随着维数的减小,半导体材料的电子能态发生变化,其光、电、声、磁等方面性能与常规体材料相比有着显著的不同[10￣12]。Bi2S3是一种重要的半导体材料,受…     

Growth of semiconducting iron sulfide thin films by chemical vapor deposition from air-stable single-source metal organic precursor for photovoltaic application

Semiconducting nanostructured iron sulfide thin films were prepared by aerosol chemical vapor deposition at 673 and 723?K from newly synthesized iron complex of dithiocarbo-1,2,3,4-tetrahydroquinoline [Fe(S₂CNC₉H₁₀)₂]. The degree of film surface roughness was determined by atomic force microscopy. The nature of the deposited thin films formed was determined by a combination of EDX analysis and glancing angle X-ray diffraction.