高功率半导体激光器结温与1/f噪声的关系研究

高功率半导体激光器的结温上升, 不仅影响它的输出功率、斜坡效率、阈值电流和寿命, 而且还会产生光谱展宽和波长偏移. 因此, 热管理成为抽运激光器研发中的一个主要问题. 本文首先建立了噪声功率谱与结温变化的物理模型, 根据压缩感知理论, 将测量得到含有高斯白噪声和1/f噪声的混叠复合噪声信号稀疏化后, 进行基追踪算法去噪, 通过改变算法的迭代次数及测量矩阵大小, 获得1/f噪声电压功率谱与结温变化关系曲线, 避免了直接测量结温的复杂性.通过数值估计结果, 可以较好地指导高功率半导体激光器的热管理工作. 关键词： f噪声')" href="#">1/f噪声 结温度 热阻 高功率半导体激光器     

Divergence at low bias and down-mixing of the current noise in a diffusive superconductor-normal-metal-superconductor junction

We present current noise measurements in a long diffusive superconductor-normal-metal-superconductor junction in the low voltage regime, in which transport can be partially described in terms of coherent multiple Andreev reflections. We show that, when decreasing voltage, the current noise exhibits a strong divergence together with a broad peak. We ascribe this peak to the mixing between the ac-Josephson current and the noise of the junction itself. We show that the junction noise corresponds to the thermal noise of a nonlinear resistor 4k B T/R with R=V/I(V) and no adjustable parameters.     

一种计算DIP芯片结温的热阻模型

本文建立了一种计算塑料DIP(双列直插式封装)芯片结温的解析热阻模型,该模型根据DIP封装结构的散热途径建立.模型中的每一热阻均能通过较为简单的解析式进行计算,这与采用实验或数值模拟方法计算热阻的其他模型不同.利用该模型计算得到的一种塑料DIP芯片的结温与数值模拟得到的结温误差在±10%以内.     

Effect of electron-phonon scattering on shot noise in nanoscale junctions

We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasiballistic transport. We predict that when the local thermal energy of the junction is larger than its lowest vibrational mode energy eV(c), the inelastic contribution to shot noise (conductance) increases (decreases) with bias as V (sqrt[V]). The corresponding Fano factor thus increases as sqrt[V]. We also show that the inelastic contribution to the Fano factor saturates with increasing thermal current exchanged between the junction and the bulk electrodes to a value which, for V > V(c), is independent of bias. These predictions can be readily tested experimentally.     

Opening of K+ channels by capacitive stimulation from silicon chip

The development of stable neuroelectronic systems requires a stimulation of nerve cells from semiconductor devices without electrochemical effects at the electrolyte/solid interface and without damage of the cell membrane. The interaction must rely on a reversible opening of voltage-gated ion channels by capacitive coupling. In a proof-of-principle experiment, we demonstrate that Kv1.3 potassium channels expressed in HEK293 cells can be opened from an electrolyte/oxide/silicon (EOS) capacitor. A sufficient strength of electrical coupling is achieved by insulating silicon with a thin film of TiO₂ to achieve a high capacitance and by removing NaCl from the electrolyte to enhance the resistance of the cell-chip contact. When a decaying voltage ramp is applied to the EOS capacitor, an outward current through the attached cell membrane is observed that is specific for Kv1.3 channels. An open probability up to fifty percent is estimated by comparison with a numerical simulation of the cell-chip contact. PACS 73.40.Mr; 82.45.Vp; 87.16.Uv; 87.19.Nn     

高功率LED热特性测试方法研究与应用

叙述了利用动态电学测试方法测量高功率LED热阻和结温的原理、试验装置、测量步骤和影响测试结果的因素.研究结果表明,该方法具有测试结构简单、稳定性高等特点,可作为高功率LED热阻和结温的一种测试方法.     

加载功率与壳温对AlGaN/GaN高速电子迁移率晶体管器件热阻的影响

结温是制约器件性能和可靠性的关键因素, 通常利用热阻计算器件的工作结温. 然而, 器件的热阻并不是固定值, 它随器件的施加功率、温度环境等工作条件的改变而变化. 针对该问题, 本文以CREE公司生产的高速电子迁移率晶体管(HEMT)器件为研究对象, 利用红外热像测温法与Sentaurus TCAD模拟法相结合, 测量研究了AlGaN/GaN HEMT器件在不同加载功率以及管壳温度下热阻的变化规律. 研究发现: 当器件壳温由80 ℃升高至130 ℃时, 其热阻由5.9 ℃/W变化为6.8 ℃/W, 增大15%, 其热阻与结温呈正反馈效应; 当器件的加载功率从2.8 W增加至14 W时, 其热阻从5.3 ℃/W变化为6.5 ℃/W, 增大22%. 对其热阻变化机理的研究发现: 在不同的管壳温度以及不同的加载功率条件下, 由于材料导热系数的变化导致其热阻随温度与加载功率的变化而变化.     

THERMOSOLUTAL CONVECTION IN A PARTIALLY DIVIDED SQUARE

An experimental investigation of the thermal contact resistance of bolt-joined aluminum honeycombs was conducted in atmosphere. The contact pressure in the junction with the bolt-joined honeycomb was determined by a pressure-measuring film. The thermal contact resistance of honeycombs across a bolted junction decreases with an increase of either the bolt torque or the number of bolts. The total thermal resistance of bolt-joined honeycombs increases with the specimen height and the cell size. An empirical correlation between the thermal contact resistance and the interfacial contact pressure was developed for the bolted honeycombs under various joint conditions. In addition, under the condition without using bolts the thermal resistances and effective thermal conductivities in three coordinates of the honeycomb were measured.     

基于拉曼热测量技术的铜基复合物法兰GaN基晶体管的热阻分析

采用拉曼热测量技术结合有限元热仿真模型,分析比较新型铜/石墨复合物法兰封装与传统铜钼法兰封装的GaN器件的结温与热阻,发现前者的整体热阻比铜钼法兰器件的整体热阻低18.7%,器件内部各层材料的温度分布显示铜/石墨复合物法兰在器件中的热阻占比相比铜钼法兰在器件中的热阻占比低13%,这证明使用高热导率铜/石墨复合物法兰封装提高GaN器件热扩散性能的有效性.通过对两种GaN器件热阻占比的测量与分析,发现除了封装法兰以外,热阻占比最高的是GaN外延与衬底材料之间的界面热阻,降低界面热阻是进一步提高器件热性能的关键.同时,详细阐述了使用拉曼光热技术测量GaN器件结温和热阻的原理和过程,展示了拉曼光热技术作为一种GaN器件热特性表征方法的有效性.     

Effect of stripe width on junction temperature of stripe-geometry semiconductor laser diodes

When a laser diode (LD) is operated at high current densities, the junction temperature can rise significantly above the heat sink temperature. Generally, rise in junction temperature is a direct consequence of inability of different layers in a laser diode to dissipate heat efficiently due to finite thermal resistance. Usually, thermal resistance increases with a reduction in stripe width. Hence, the issue of thermal management becomes very important in modern days narrow stripe-geometry lasers. In this paper, the effect of stripe width on the junction temperature of a stripe-geometry semiconductor LD is analyzed by originating different heat sources. This has been accomplished using a simple technique for the measurement of junction temperature of a LD.     

Photon-number-resolving detection at a telecommunications wavelength with a charge-integration photon detector

We demonstrate multiphoton discrimination at a telecommunications wavelength with the readout frequency of 40 Hz by a charge-integration photon detector (CIPD). The CIPD consists of an InGaAs pin photodiode and a GaAs junction field effect transistor as a preamplifier in a charge-integration circuit, which is cooled to 4.2 K to reduce thermal noise. The quantum efficiency of the CIPD (the detector itself) is 80% for 1530 nm light, and the readout noise is measured as 0.26 electrons at 40 Hz. We can construct Poisson distributions of photocarrier numbers with distinct peaks at each photocarrier number, corresponding to a signal-to-noise ratio of about 3.     

Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET

Bias non-conservation characteristics of radio-frequency noise mechanism of 40-nm n-MOSFET are observed by modeling and measuring its drain current noise. A compact model for the drain current noise of 40-nm MOSFET is proposed through the noise analysis. This model fully describes three kinds of main physical sources that determine the noise mechanism of 40-nm MOSFET, i.e., intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes. The most important findings of the bias non-conservative nature of noise mechanism of 40-nm n-MOSFET are as follows.(i) In the strong inversion region, the suppressed shot noise is weakly affected by the thermal noise of gate parasitic resistance. Therefore, one can empirically model the channel excess noise as being like the suppressed shot noise.(ii) In the middle inversion region, it is almost full of shot noise.(iii) In the weak inversion region, the thermal noise is strongly frequency-dependent, which is almost controlled by the capacitive coupling of substrate parasitic resistance. Measurement results over a wide temperature range demonstrate that the thermal noise of 40-nm n-MOSFET exists in a region from the weak to strong inversion, contrary to the predictions of suppressed shot noise model only suitable for the strong inversion and middle inversion region. These new findings of the noise mechanism of 40-nm n-MOSFET are very beneficial for its applications in ultra low-voltage and low-power RF, such as novel device electronic structure optimization, integrated circuit design and process technology evaluation.     

Current-influenced voltage noise in bulk polycrystalline high-Tc superconductors

The 1/f voltage noise in bulk polycrystalline high-temperature superconductors (HTSC) under bias current and magnetic field has its origin in the noise current-dependence of the grain boundary junctions (GBJs), due in turn to the correlated effects of junction critical current and normal resistance fluctuations. The analogy between the results obtained by varying the bias current through the specimen and those performed with temperature as variable is evidenced. The noise maxima obtained in both sets of measurements turn out to be caused by the junction critical current fluctuations, which dominate when the currents flowing through the GBJs are close to the Josephson critical current. The anti-phase correlation between the normal resistance and the critical current fluctuations is responsible for the monotonical decrease of the noise at constant bias current, with the temperature exceeding the value corresponding to the noise maximum. In contrast, varying the bias current at fixed temperature, the voltage noise exhibits a local minimum followed by an increasing tendency after passing through the maximum.     

Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes

This study utilizes the Shockly equation and Fourier’s law with the optical, electrical and thermal properties of LEDs to predict the variation of the junction temperature with the injection current. It is shown that the relationship of the junction temperature with the injection current can be determined by the effective thermal conductivity, temperature coefficient of junction voltage, series resistance, integral constant (forward voltage at the initial forward current and junction temperature), ambient temperature and external quantum efficiency. The effective thermal conductivity, temperature coefficient of junction voltage, and series resistance are calculated from the material properties based on the structures of LEDs instead of measurements in this study. The junction temperature of AlGaInP/GaInP MQW red LED predicted from this study agrees with the available experimental data and the junction temperatures of GaInN UV LED and AlGaN UV LED calculated by this work are also consistent with these obtained from the emission peak shift method. The elevated temperatures of AlGaN and GaInN are larger than that of AlGaInP/GaInP MQW red LED due to the difference of the thermal conductivity for the LED substrate. This study also presents the effects of the parameters on the variation of the junction temperature with the injection current. The effective thermal conductivity and ambient temperature significantly affect the junction temperature of LEDs.     

Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement

Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor (MOSFET) is an important semiconductor device for light emitting diode-integrated circuit (LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester (T3ster) at 2.0 A input current and ambient temperature varying from 25 ℃to 75 °C. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4_I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4_I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.     

Normal-metal-superconductor tunnel junction as a Brownian refrigerator

Thermal noise generated by a hot resistor (resistance R) can, under proper conditions, catalyze heat removal from a cold normal metal (N) in contact with a superconductor (S) via a tunnel barrier (I). Such a NIS junction is reminiscent of Maxwell's demon, rectifying the heat flow. Upon reversal of the temperature gradient between the resistor and the junction, the heat fluxes are reversed: this presents a regime which is not accessible in an ordinary voltage-biased NIS structure. We obtain analytical results for the cooling performance in an idealized high impedance environment and perform numerical calculations for general R. We conclude by assessing the experimental feasibility of the proposed effect.     

Shot-noise-driven escape in hysteretic Josephson junctions

We have measured the influence of shot noise on hysteretic Josephson junctions initially in the macroscopic quantum tunneling regime. The escape threshold current into the resistive state decreases monotonically with increasing average current through the scattering conductor, which is another tunnel junction. Escape is predominantly determined by excitation due to the wideband shot noise. This process is equivalent to thermal activation (TA) over the barrier at effective temperatures up to about 4 times the critical temperature of the superconductor. The presented TA model is in excellent agreement with the experimental results.     

Lifetime of the superconductive state in short and long Josephson junctions

We study the transient statistical properties of short and long Josephson junctions under the influence of thermal and correlated fluctuations. In particular, we investigate the lifetime of the superconductive metastable state finding the presence of noise induced phenomena. For short Josephson junctions we investigate the lifetime as a function both of the frequency of the current driving signal and the noise intensity and we find how these noise-induced effects are modified by the presence of a correlated noise source. For long Josephson junctions we integrate numerically the sine-Gordon equation calculating the lifetime as a function of the length of the junction both for inhomogeneous and homogeneous bias current distributions. We obtain a non-monotonic behavior of the lifetime as a function of the frequency of the current driving signal and the correlation time of the noise. Moreover we find two maxima in the non-monotonic behaviour of the mean escape time as a function of the correlated noise intensity.     

Enhancement of Resonant Activation by Constant Bias Current for Superconducting Junction

We consider a superconducting(Josephson) junction driven by the thermal noise with an ac drive current and a dc constant bias current in the overdamped case and in the underdamped case,respectively,and investigate the effect of the constant bias current on the evolution of the net voltage versus the driving frequency.It is shown that,with some suitably selected values of the system's parameters,suitably increasing the absolute value of the constant bias current can lead to the enhancement of resonant activation of the net voltage versus the driving frequency.This result can benefit the investigation for the Josephson junction subjected to the constant bias current(or voltage).     

强反型区下纳米MOSFET的射频噪声机理分析

为了有效地表征纳米MOSFET强反型区下的射频噪声特性,研究了其噪声建模的方法。在分析45 nm MOSFET射频小信号等效电路参数提取结果的基础上,建立了该器件漏极电流噪声的简洁模型。该模型完整地表征了决定45 nm器件噪声机理的三个组成部分:本征漏极电流噪声、栅极管脚寄生电阻热噪声和栅漏衬底寄生电磁耦合噪声。噪声测量在验证所建模型准确性和精度的同时,还表明:45 nm MOSFET的本征漏极电流噪声为受抑制的散粒噪声,并且随着栅源偏压的降低受抑制性逐渐减弱直至消失。