表面氧化钛涂层增强金刚石中浅层NV色心的荧光强度

本文利用原子层沉积技术在金刚石表面沉积了一层氧化钛涂层,该方法使得金刚石中的浅层(深度小于10 nm)NV~-色心的电荷态变得稳定,同时其荧光强度增强至大约原本的2倍.这种表面涂层技术能够为固态量子体系提供厚度可控的保护层或钝化层,同时又不损伤或腐蚀体系表面,有望成为一种固态量子体系钝化或封装的方法.     

Quantum corrections to the resistivity of a new nanoobject, a two-dimensional layer at the “Tellurium Clusters-Opal Matrix” internal interface

The low-temperature anomalous magnetoresistance of a new nanoobject, a two-dimensional (2D) layer at an internal interface separating nanoclusters of undoped tellurium and a dielectric matrix (opal), is studied experimentally and theoretically. The 2D layer in the Te-opal structure is a regular array of spherical surfaces coated with a 2D hole conducting layer, i.e., a so-called interface bubble lattice. The specific features observed in the magnetoresistance agree qualitatively with the theory of quantum corrections to resistivity but manifest themselves in magnetic fields unexpectedly strong for this effect (up to 120 kOe). A method for calculating quantum corrections to resistivity is developed in terms of the theory describing the effect of weak localization of noninteracting particles. This method takes into account both the complex geometric structure of the object and the specific features of the Te electronic spectrum. The parameters characterizing the phase relaxation of the 2D holes are determined. The results obtained are compared with data available on 2D layers produced on a flat surface of single-crystal Te. The features revealed in the manifestation of weak localization in an array of 2D planes randomly oriented relative to the magnetic field are discussed.     

On the two dimensional effective electron mass in quantum wells,inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures.     

How many bits does it take to track an open quantum system?

A D-dimensional Markovian open quantum system will undergo quantum jumps between pure states, if we can monitor the bath to which it is coupled with sufficient precision. In general, these jumps, plus the between-jump evolution, create a trajectory which passes through infinitely many different pure states. Here we show that, for any ergodic master equation, one can expect to find an adaptive monitoring scheme on the bath that can confine the system state to jumping between only K states, for some K ≥ (D - 1)(2) + 1. For D = 2 we explicitly construct a two-state ensemble for any ergodic master equation, showing that one bit is always sufficient to track a qubit.     

Ti原子与氮掺杂金刚石(001) 界面结合强度的第一性原理研究

摘 要：金属钛原子在金刚石表面的结合强度直接影响金刚石真空介电窗口的使用性能和寿命. 本文通过基于密度泛函理论的第一性原理方法研究了Ti原子与不同氮掺杂位置的金刚石（001）界面的结合能、电荷分布和稳态几何结构. 结果表明：Ti原子与N原子取代掺杂在第二层C原子处金刚石表面的结合能比未掺杂和掺杂在第三层的结合能都高,达到-7.293 eV,使得金刚石表面形成的界面结构更加稳定,结合强度更好;通过电荷分布分析,N原子掺杂在第二层金刚石表面的Ti原子上的电荷转移最明显,对金刚石表面碳原子吸附最强,也具有更好的结合强度. 与未掺杂金刚石表面形成的Ti-C键键长相比,N掺杂在第二层和第三层C原子处金刚石表面形成的Ti-C键键长比前者分别长0.051 Å和0.042 Å,略有增加.     

Quantum melting of the quasi-two-dimensional vortex lattice in kappa- (ET)2Cu(NCS)(2)

We report torque magnetization measurements in regions of the mixed state phase diagram ( B approximately mu(o)H(c2) and T(c)/10(3)) of the organic superconductor kappa-(ET)2Cu(NCS)(2), where quantum fluctuations are expected to dominate thermal effects. Over most of the field range below the irreversibility line ( B(irr)), magnetothermal instabilities are observed in the form of flux jumps. The abrupt cessation of these instabilities just below B(irr) indicates a quantum melting transition from a quasi-two-dimensional vortex lattice phase to a quantum liquid phase.     

Nonlinear dynamics of semiclassical spin in a time-dependent magnetic field

The dynamics of magnetic nanoclusters (or molecules) with a large spin in a magnetic field whose strength varies in proportion to time is analyzed. Such a field breaks the symmetry relative to rotations through 2π, as well as clockwise and counterclockwise rotations, and induces a number of new coherent quantum effects in the spin dynamics, such as the formation of a band energy spectrum with continuous spin states or the emergence of “Bloch” oscillations in spin precession and interband Zener tunneling. Bloch oscillations are manifested in experiment as equidistant identical jumps on the magnetization curve. The interband Zener tunneling gives rise to additional jumps and peaks on the susceptibility of the system.     

New method to induce 2D–3D transition of strained CdSe/ZnSe layers

We present new growth conditions for growing high-quality CdSe/ZnSe quantum dots with photoluminescence emission measurable up to room temperature. The surface morphology is characterized in situ by Reflective High Energy Electron Diffraction (RHEED). The key point is the introduction of a new step in the growth process using amorphous selenium to induce a 2D–3D transition of a CdSe strained layer on ZnSe to form the dots. Optical characterizations by photoluminescence of CdSe/ZnSe quantum dots obtained that way, as well as X-ray diffraction results are also discussed here.     

Fluctuations of the intersubband splitting energy and the potential well shape of two-dimensional electrons in the quantum Hall effect regime

Recombination radiation and inelastic light scattering spectra of 2D electrons are studied simultaneously in structures with a single GaAs quantum well in the quantum Hall effect regime. It is found that the intensity of intersubband inelastic light scattering (the SDE mode) at the filling factor ν = 2 exhibits fluctuations in phase with fluctuations of the photoluminescence intensity of 2D electrons of the ground subband. It is shown that, simultaneously with fluctuations of the scattered light and recombination radiation intensities, the spectral positions of these lines change stepwise by 0.3–0.5 meV. The jumps found in the spectral positions of lines are observed only in narrow intervals of magnetic fields corresponding to the quantum Hall effect and are presumably associated with zero-point fluctuations (Casimir-Lifshits force).     

Transformation of diamond to graphite under heat treatment at low pressure

Diamond is a very persistent metastable form of carbon. At low pressure, graphitization of the diamond surface is observed at temperatures lower than 1700 °C. The basic cause of this is known to be interaction with oxygen. In the present paper, the microphysics of the phenomenon of diamond surface graphitization was studied. It has been shown that surface graphitization proceeds in several stages. First, a thin surface layer of graphite is developed due to interaction with oxygen (and probably other substances). As temperature is increased, nuclei of 5–10 nm in size are formed within it. The graphite nuclei are capable of migrating along the surface of diamond. They form ‘nests,’ where they are coalesced into aggregates 10–100 nm in size. These ‘nests’ give rise to diamond surface layer graphitization, which proceeds along diamond {211} crystallographic planes and forms graphitization figures. At this stage, the factor that determines the transformation is the pressure exerted on graphitizing material by the surrounding diamond.     

Unique electrical properties of nanostructured diamond cones

The preparation and electrical properties of diamond nanocones are reviewed, including a maskless etching pro- cess and mechanism of large-area diamond conical nanostructure arrays using a hot filament chemical vapor deposition （HFCVD） system with negatively biased substrates, and the field electron emission, gas sensing, and quantum transport properties of a diamond nanocone array or an individual diamond nanocone. Optimal cone aspect ratio and array density are investigated, along with the relationships between the cone morphologies and experimental parameters, such as the CH4/H2 ratio of the etching gas, the bias current, and the gas pressure. The reviewed experiments demonstrate the possi- bility of using nanostructured diamond cones as a display device element, a point electron emission source, a gas sensor or a quantum device.     

Non-nearest-neighbor jumps in 2D diffusion: Pd on W(110)

A variety of jumps has in the past been identified in diffusion of atoms on 1D channeled surfaces. To establish the jump processes important in diffusion on a 2D surface, the movement of individual Pd atoms has been examined on W(110). From the distribution of displacements of Pd at high temperatures, double jumps are found along the close-packed <111>. For the first time, sizable differences are also observed between the mean-square displacements along x and y, which demonstrate unexpected contributions from jumps along <110>, but not along <001>. These jumps proceed over activation barriers higher than for single jumps, under conditions predicted from previous work with Pd on the channeled W(211).     

以金刚石薄膜为空穴传导层的有机薄膜电致发光

以在半透明金膜上生长的微晶金刚石薄膜作为空穴传导层，得到了以８－羟基喹啉铝（Ａｌｑ３）为发光材料的有机薄膜的电致发光，对器件的电流－电压特性，电压－亮度特性进行了测量，并计算了量子效率，结果表明，该器件具有较高的量子效率及较小的工作电流，从能带图出发，对结果进行了分析。     

Discrete photodetection of quantum jumps on the V configuration of atomic levels

A theory of the discrete photodetection of quantum jumps on the V configuration of atomic levels has been developed. A three-level source atom is placed in a cavity excited by a resonance fluorescence field. The cavity is tuned to exact resonance with an atomic transition. The cavity mode state is tested by a flux of unexcited (at the entrance) probe atoms passing through the cavity. The energy states of the outgoing probe atoms are detected by ionization chambers, which are assumed ideal. This a posteriori statistical information is indirectly related to the numerical characteristics of a measured quantum system consisting of the source atom and cavity mode. The “tuning” conditions for a discrete photodetector, i.e., the rules for choosing the parameters and durations of the interactions of the cavity mode with the probe and source atoms, intensities of the pump and probe fields that are necessary for observing quantum jumps from the “bright” state to the “dark” one and vice versa, have been determined. A two-state model that describes the dynamics of a quantum jump has been analyzed. The formulas have been obtained for the observable characteristics of quantum jumps: the mean residence time of the quantum system in quasistationary states (durations of the bright and dark periods), probabilities of quantum jumps, mean excitation levels of the quantized cavity mode, etc.     

Collective defect formation in the high-temperature superconductor YBa2Cu3O7 under the influence of adsorbed water molecules

The mechanisms for defect formation stimulated by the adsorption of water molecules in the surface of YBa₂Cu₃O₇ ceramic are studied, together with the types of defects and their distributions. It is found that a water layer physically bound to the surface reduces the rates of annihilation and capture of positrons, changes the amount of barium and copper on the surface by a factor of two, and inhibits diffusive jumps of nickel atoms. A layer of adsorbed water excites subthreshold formation of 10²¹ cm⁻³ interstitial Ba and Cu1 atoms and transitions of oxygen from O1 to O5, and vice versa in the volume of crystallites, and the migration of defects and accumulation of Ba atoms in the surface layer, which block diffusive jumps of Ni within the volume of the crystals. These effects are related to the excitation of collective, low-frequency weakly damped motion of heavy holes in the crystal volume when defects are formed on the surface by physically adsorbed H₂O molecules, which is accompanied by Coulomb repulsion of cations from intermediate layers into interstitials and the migration of defects in the field of the collective excitations. Zh. éksp. Teor. Fiz. 116, 586–603 (August 1999)     

Quasi-one-dimensional quantized states in an epitaxial Ag film on a one-dimensional surface superstructure

The in-plane energy dispersion of quantized states in an ultrathin Ag film formed on the one-dimensional (1D) surface superstructure Si(111)-(4 x 1)-In shows clear 1D anisotropy instead of the isotropic two-dimensional free-electron-like behavior expected for an isolated metal film. The present photoemission results demonstrate that an atomic layer at the film-substrate interface can regulate the dimensionality of electron motion in quantum films.     

Phase jump in resonance harmonic emission driven by strong laser fields

We present a theoretical investigation of the multiphoton resonance dynamics in the high-order-harmonic generation(HHG) process driven by a strong driving continuous wave(CW) field along with a weak control harmonic field.The Floquet theorem is employed to provide a nonperturbative and exact treatment of the interaction between a quantum system and the combined laser field.Multiple multiphoton-transition paths for the harmonic emission are coherently summed.The phase information about paths can be extracted via the Fourier transform analysis of the harmonic signals which oscillate as a function of the relative phase between driving and control fields.Phase jumps are observed when sweeping across the resonance by varying the frequency or intensity of the driving field.The phase variation as a function of driving frequency at a fixed intensity and as a function of the intensity at a fixed driving frequency allows us to determine the intensity dependence of the transition energy of quantum systems.     

Giant enhancement of noncontact friction between closely spaced bodies by dielectric films and two-dimensional systems

The effect of an external bias voltage and spatial variations of the surface potential on the damping of cantilever vibrations in an atomic force microscope (AFM) is considered. The damping is due to an electrostatic friction that arises due to dissipation of the energy of an electromagnetic field generated in the sample by oscillating static charges induced on the surface of the AFM probe tip by the bias voltage or spatial variations of the surface potential. A similar effect appears when the tip is oscillating in an electrostatic field created by charged defects present in the dielectric sample. The electrostatic friction is compared to the van der Waals (vdW) friction between closely spaced bodies, which is caused by a fluctuating electromagnetic field related to the quantum and thermal fluctuations of current density inside the bodies. It is shown that the electrostatic friction and the vdW friction can be strongly enhanced in the presence of dielectric films or two-dimensional (2D) structures—such as a 2D electron system or an incommensurate layer of adsorbed ions exhibiting acoustic oscillations—on the probe tip and sample surfaces. It is also shown that the damping of cantilever oscillations caused by the electrostatic friction in the presence of such 2D structures can have the same order of magnitude and the same dependence on the distance as observed in experiment by Stipe et al. [Phys. Rev. Lett. 87, 096801 (2001)]. At small distances, the vdW friction can be large enough to be measured in experiment. In interpreting the experimental data that obey a quadratic dependence on the bias voltage, one can reject a phonon mechanism according to which the friction depends on the fourth power of the voltage.     

Study of vacancy on diamond (1 0 0) (2 × 1) surface from first-principles

Structure and energy related properties of neutral and charged vacancies on relaxed diamond (1 0 0) (2 × 1) surface were investigated by means of density functional theory. Calculations indicate that the diffusion of a single vacancy from the top surface layer to the second layer is not energetically favored. Analysis of energies in charged system shows that neutral state is most stable on diamond (1 0 0) (2 × 1) surface. The multiplicity of possible states can exist on diamond (1 0 0) surface in dependence on the surface Fermi level, which supports that surface diffusion of a vacancy is mediated by the change of vacancy charge states. Analysis of density of states shows surface vacancy can be effectively measured by photoelectricity technology.