The effects of topology on the structural, dynamic and mechanical properties of network-forming materials

The effects of network topology on the static structural, mechanical and dynamic properties of MX(2) network-forming liquids (with tetrahedral short-range order) are discussed. The network topology is controlled via a single model parameter (the anion polarizability) which effectively constrains the inter-tetrahedral linkages in a physically transparent manner. Critically, it is found to control the balance between the stability of corner-?and edge-sharing tetrahedra. A potential rigidity transformation is investigated. The vibrational density of states is investigated, using an instantaneous normal model analysis, as a function of both anion polarizability and temperature. A low frequency peak is seen to appear and is shown to be correlated with the fraction of cations which are linked through solely edge-sharing structural motifs. A modified effective mean atom coordination number is proposed which allows the appearance of the low frequency feature to be understood in terms of a mean field rigidity percolation threshold.     

Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

Structural details of the amorphous binary GeTe and ternary Ge₂Sb₂Te₅ (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure consisting of corner- and edge-sharing tetrahedra of the type GeTe_4−nGe_n (n=0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb₂T₃ component in Raman scattering; reasons about this explanation, as well as for the lack of any Te–Te bonds are briefly described.     

Structural tailoring of silicon chalcogenide glasses: Compositional control of edge-sharing units as monitored by high-resolution29Si solid state NMR

²⁹Si MAS-NMR data provide strong evidence for the presence of edgesharing tetrahedra in non-oxide chalcogenide glasses derived from SiS₂ and SiSe₂. The spectra show three distinct peaks which have been assigned on the basis of suitable model compound studies. It is further shown that the fraction of edge-sharing can be controlled by compositional parameters. In glassy SiSe₂ both the presence of excess selenium and additional network formers such as phosphorus selenide are shown to diminish the degree of edge-sharing due to the formation of Si-Se-Se or Si-Se-P bonds. In glassy SiS₂ a similar effect can be accomplished by a network modifier such as Li₂S. In the latter case, the creation of nonbridging chalcogen atoms is accompanied by a concomitant decrease of edge-sharing tetrahedra.     

First principles study of Si(3 3 5)-Au surface

The structural and electronic properties of gold decorated Si(335) surface are studied by means of density-functional calculations. The resulting structural model indicates that the Au atoms substitute some of the Si atoms in the middle of the terrace in the surface layer. Calculated electronic band structure near the Fermi energy features two metallic bands, one coming from the step edge Si atoms and the other one having its origin in hybridization between the Au and neighboring Si atoms in the middle of the terrace. The obtained electronic bands remain in good agreement with photoemission data.     

碳纳米管封装Si20团簇的热稳定性研究

用分子动力学方法模拟一种特殊结构Si20 (表面异构的硅十二面体结构)填充到不同管径的扶手椅型碳纳米管中组成复合结构的热稳定性。通过能量分析和定量统计缺陷多边形数量等方法来研究这种结构在碳纳米管中的稳定性和结构演变情况。研究发现Si20的热稳定性和碳纳米管的直径关系密切;其在CNT(15, 15)中的热稳定性最好,当管径逐渐增加时,其热稳定性呈下降趋势;直至管径增加到CNT(21, 21),碳纳米管对Si20的空间限制作用变得很小,以至于不足以维持Si20的稳定。此外,Si原子因热振动替换碳纳米管中C原子而形成十二边形缺陷,这对碳纳米管的热稳定性有着明显的降低作用。     

Structural and electronic properties of the interface between the high-k Oxide LaAlO3 and Si(001)

The structural and electronic properties of the LaAlO(3)/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption structures on silicon. A phase diagram of the interface stability is calculated as a function of oxygen and Al chemical potentials. We find that an electronically saturated interface is obtained only if Al atoms substitute some of the interfacial Si atoms. These findings raise serious doubts whether LaAlO3 can be used as an epitaxial gate dielectric.     

Symmetrization of the trimer model for Si(111) 7×7

A symmetrized extension of the trimer model for the Si(111) 7×7 structure is presented. It exhibits new features such as sixfold coordinated Si atoms which are not unusual in Si chemistry but have not been considered in previous structural models. Atomic coordinates are optimized by a Keating-type strain energy minimization and the structure factor for transmission electron diffraction is calculated.     

Si10团簇成键条件和解离行为的密度泛函紧束缚研究

本研究利用遗传算法和基于密度泛函理论的紧束缚方法相结合的计算方法,研究了Si₁₀团簇的原子堆积结构的成键条件和电子性质.计算结果发现,Si₁₀团簇的最低能稳定结构表现为以一个三棱柱体为基础结构单元,在其3个侧面和一个底面堆积了四个金字塔堆积结构,形成了由四个金字塔包围三棱柱体的类球形结构.原子间成键强烈依赖于团簇中各原子紧邻原子的几何排布情况,原子间交叠电子布居数具有显著的方向性,随着键长增加迅速减小.由团簇中各原子成键条件的分析,可以判断Si₇团簇是Si₁₀团簇最容易形成的解离产物,然后出现的是Si₆团簇.     

Dielectric constants of Zr silicates: a first-principles study

Using density-functional theory, we compute the optical and static dielectric constants for a set of Zr silicates modeled by various SiO2 crystals, with Zr atoms substitutional to Si, and by an amorphous structure. We then derive a microscopic scheme that relates the dielectric constants to structural units centered on Si and Zr atoms through the definition of characteristic parameters. Applied to amorphous (ZrO2)(x)(SiO2)(1-x), these schemes describe the observed dependence of the dielectric constants on the Zr concentration and highlight the role of ZrO6 units.     

Fe_9Si的电子结构及铁磁性质的第一性原理研究

采用第一性原理的密度泛函理论(Density Functional Theory)赝势平面波方法,对Fe_9Si的电子结构和铁磁性质进行理论计算.计算结果表明:(1)Fe_9Si具有负的形成热-0.1094 eV/atom,结合能5.124eV/atom,表明Fe_9Si合金具有强结合力和结构稳定性;(2)Fe_9Si具有典型的金属能带特征,穿过Fermi能级的能带最主要是Fe的3d态电子的贡献,其次是来自Si的3p态电子的贡献.结合键不是单一金属键,而是金属键和共价键组成的混合键;(3)Fe_9Si的铁磁性主要来自Fe原子的未满层壳的3d态电子的自旋.计算结果为Fe_9Si铁磁性材料的设计与应用提供了理论依据.     

Fe9Si的电子结构及铁磁性质的第一性原理研究

采用第一性原理的密度泛函理论（Density Functional Theory）赝势平面波方法, 对Fe9Si的电子结构和铁磁性质进行理论计算。 计算结果表明： (1) Fe9Si具有负的形成热-0.1094 eV/atom, 结合能5.124 eV/atom, 表明Fe9Si合金具有强结合力和结构稳定性; (2) Fe9Si具有典型的金属能带特征, 穿过Fermi能级的能带最主要是Fe的3d态电子的贡献, 其次是来自Si的3p态电子的贡献。 结合键不是单一金属键, 而是金属键和共价键组成的混合键; (3) Fe9Si的铁磁性主要来自Fe原子的未满层壳的3d态电子的自旋。 计算结果为Fe9Si铁磁性材料的设计与应用提供了理论依据。     

Local bond rupture of Si atoms on Si(1 1 1)-(2 × 1) induced by the surface π-π∗ excitation

A scanning tunneling microscopy study has revealed that threefold-coordinated Si atoms at intrinsic sites of reconstructed (2 × 1) structure on the Si(1 1 1) surface are removed to form a surface monovacancy by an electronic mechanism under surface-specific optical transitions at 0.45 eV. This result provides direct evidence for the relaxation of excited surface electronic states as the origin of excitation-induced structural instability on semiconductor surfaces.     

Stability of Si70 cage structures

We have performed calculations on the cage structures with and without inner atoms, a stacked structure for Si70 cluster by using FP-LMTO-MD method. It is found that the Si70 perfect cages, including its ionic cages, would distort into puckered hollow balls. But the distorted hollow ball is still less stable than a stacked structure. Further calculations suggest that a distorted cage structure with inner atoms, resulting from Si60 perfect cages by inserting 10 inner atoms, is much more stable than the distorted hollow cage and the stacked structure of Si70.     

Structure and stability of a silicon cluster on sequential doping with carbon atoms

SiC is a highly stable material in bulk. On the other hand, alloys of silicon and carbon at nanoscale length are interesting from both technological as well fundamental view point and are being currently synthesized by various experimental groups (Truong et. al., 2015 [26]). In the present work, we identify a well-known silicon cluster viz., Si₁₀ and dope it sequentially with carbon atoms. The evolution of electronic structure (spin state and the structural properties) on doping, the charge redistribution and structural properties are analyzed. It is interesting to note that the ground state SiC clusters prefer to be in the lowest spin state. Further, it is seen that carbon atoms are the electron rich centres while silicon atoms are electron deficient in every SiC alloy cluster. The carbon–carbon bond lengths in alloy clusters are equivalent to those seen in fullerene molecules. Interestingly, the carbon atoms tend to aggregate together with silicon atoms surrounding them by donating the charge. As a consequence, very few Si–Si bonds are noted with increasing concentrations of C atoms in a SiC alloy. Physical and chemical stability of doped clusters is studied by carrying out finite temperature behaviour and adsorbing O₂ molecule on Si₉C and Si₈C₂ clusters, respectively.     

硅烯饱和吸附碱金属原子的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了硅烯饱和吸附碱金属元素原子的稳定性、微观几何结构和电子性质, 并与纯硅烯及其饱和氢化结构进行了对比分析. 研究发现复合物SiX(X=Li, Na, K, Rb)的形成能都是负的, 相对于纯硅烯来说可以稳定存在. Bader电荷分析表明, 电荷从碱金属原子转移至硅原子. 从成键方式来看, 硅烯与氢原子形成共价键, 而与碱金属原子之间形成的键主要是离子性成键, 但还存在部分共价关联成分. 能带计算表明, 锂原子饱和吸附在硅烯形成的复合物SiLi是直接带隙的半导体, 带隙大小为0.34 eV. 其他碱金属饱和吸附在硅烯上形成的复合物都表现为金属性.     

A novel metallic silicon hexaboride,Cmca-B6Si

Using first-principles calculations, we propose a novel metallic silicon hexaboride, Cmca-B₆Si. This structure is dynamically and mechanically stable at ambient pressure. Furthermore, the formation energy of Cmca-B₆Si is lower than those of synthesized Pnnm-SiB₆ and SiB₄, indicating that Cmca-B₆Si is thermodynamically stable. The calculations of thermodynamic stability and structural inheritance indicate that Cmca-B₆Si may be obtained by removing Li from the synthesized LiB₆Si, that is, by imitating the preparation of Si₂₄ and T-Graphene C₄. The structure of Cmca-B₆Si is a covalent three dimensional framework linked by B₁₂ icosahedrons and Si atoms. The analysis of band structure and density of states reveals that Cmca-B₆Si is metallic because of the partially occupied 2p and 3p electrons of B and Si atoms, respectively. The electron orbitals reveal that Cmca-B₆Si has a novel two-dimensional metallicity. This study gives a fundamental investigation on the structural, phonon, and electronic properties of Cmca-B₆Si.     

吡嗪分子在硅(100)面吸附构型的XPS和NEXAFS谱理论研究

本文利用X射线谱研究了吡嗪(C₄H₄N₂)分子共价吸附于硅(100)面的几种吸附构型的几何结构和电子结构. 利用密度泛函理论结合团簇模型,对预测的吸附结构的碳K壳层(1s)X射线光电子能谱(XPS)和近边X射线吸收精细结构(NEXAFS)谱进行了模拟. 计算结果阐明了XPS和NEXAFS谱与不同吸附构型的对应关系. 与XPS谱相比,NEXAFS谱对所研究的吡嗪/硅(100)体系的结构有明显的依赖性,可以很好地用于结构鉴定. 根据碳原子的分类,研究了在NEXAFS光谱中不同化学环境下碳原子的光谱成分.     

Development of a model of silicon carbide thermodestruction for preparation of graphite layers

A three-stage scheme of the silicon carbide thermodestruction resulting in surface graphitization, which was proposed earlier (based on structural studies), is discussed. A theoretical analysis shows, however, that this process occurs in two stages, namely, thermodesorption of silicon atoms from the two outer Si-C bilayers followed by condensation of carbon atoms on the Si(0001) face of silicon carbide, thus giving rise to the formation of a two-dimensional graphite structure (graphene).     

Core-level photoemission of the Si(1 1 1)– -Ag surface using synchrotron radiation

The evolution of Si 2p core-level photoemission during a structural conversion from the Si (1 1 1)– -Ag to the Si(1 1 1)– -Ag superstructures induced by Ag adatoms adsorption at 140 K was studied using synchrotron radiation. The component from the top-layer Si-trimer atoms on the former surface was found to split into two components in the latter surface. The result is discussed in terms of a relaxation in some of the Si trimers induced by Ag adatoms sitting on the nearby Ag triangles of the -Ag substrate. The intensity ratio between the split components is a key to exclude some structure models proposed so far for the phases.     

Structure and optical properties of GeGaS films deposited by thermal evaporation

Amorphous GeGaS thin films have been successfully deposited onto glass slides at room temperature by the thermal evaporation technique. The structural units of the films were studied using Raman spectroscopy. In addition to the basic structural units of GeS₄ tetrahedra, there are some SS and GeGe homopolar bonds which exist in the films. The increase in Ge atoms leads to the replacement of SS bonds by GeGe bonds, and the isolated Ge(Ga)S₄ tetrahedra units transform into corner-sharing or edge-sharing Ge(Ga)S₄ tetrahedra units in the films. The refractive index and optical band gap were derived from transmission spectra of films. The values of optical band gap decrease while the refractive indices increase with increasing Ge content. Composition dependence of optical band gap and refractive index has also been interpreted in terms of the variation in the structure of films based on Raman spectra.