GaAs被动调Q兼输出耦合Nd∶YVO4激光特性研究

利用可饱和吸收半导体GaAs作为被动调Q元件和F-P输出耦合镜,实现了半导体激光器(LD)抽运Nd:YVO4激光调Q运转,获得脉宽度为47ns,重复频率为1183kHz,平均功率为430 mW,光束质量为M2=1.13的TEM00激光基横模输出,调Q抽运阈值为1700mW.并数值求解了含有GaAs被动调Q兼输出耦合的速率方程,分析了GaAs被动调Q机理以及脉宽宽度、重复频率、平均功率随抽运速率、腔长的变化关系,理论与实验结果相一致.为多功能综合型微型调Q固体激光器提供了简单有效的方法.     

Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber

The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.     

LD连续泵浦Nd:YVO4声光调Q激光器

利用半导体激光器（LD）连续单端泵浦Nd:YVO4晶体,实现了声光调Q输出1 064nm的短脉冲。分析并用实验验证了不同透过率输出耦合镜及不同重复频率条件下,输出调Q脉冲能量、脉冲宽度及平均输出功率的规律。在泵浦功率为20.7W,重复频率为50kHz时,获得了最大平均输出功率为5.72W的脉冲,光 光转换效率为28%,斜效率为32.4%;在重复频率为10kHz时,最大单脉冲能量为0.286mJ,脉宽为22ns,峰值功率为13kW。     

LD-pumped Q-switched Nd:YVO4 self-Raman laser

LD-pumped actively Q-switched Nd:YVO₄ self-Raman laser is presented. The maximum average output power of the self-Raman laser at 1173.6 nm was obtained to be 2.21 W at the incident pump power of 18 W and the pulse repetition frequency (PRF) of 30 kHz, with the corresponding optical conversion efficiency of 12.28%.     

LD连续泵浦Nd:YVO4声光调Q激光器

 利用半导体激光器（LD）连续单端泵浦Nd:YVO₄晶体，实现了声光调Q输出1 064nm的短脉冲。分析并用实验验证了不同透过率输出耦合镜及不同重复频率条件下，输出调Q脉冲能量、脉冲宽度及平均输出功率的规律。在泵浦功率为20.7W，重复频率为50kHz时，获得了最大平均输出功率为5.72W的脉冲，光 光转换效率为28%，斜效率为32.4%；在重复频率为10kHz时，最大单脉冲能量为0.286mJ，脉宽为22ns，峰值功率为13kW。     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

Q-switched mode-locked diode-pumped Nd:YVO4 laser with a saturable Bragg reflector

We demonstrated a diode-pumped passively Q-switched mode-locked Nd:YVO4 laser by using a relaxed saturable Bragg reflector (SBR). Stable mode-locked pulse train with the repetition rate of ～230 MHz was achieved and the pulse train was modulated by the Q-switched envelope with the repetition rate of ～150 kHz. The maximum output of 4 W was obtained under the pump power of 13.5 W. The optical-to-optical efficiency was 30%. We also discussed the transition of each process having emerged.     

LD-pumped passively Q-switched Nd:YVO4/YVO4 laser with an Nd3+:Cr4+:YAG saturable absorber

By using a piece of codoped Nd³⁺:Cr⁴⁺:YAG crystal as a saturable absorber, a laser-diode pumped passively Q-switched Nd:YVO₄/YVO₄ laser has been realized. The maximum laser output power of 2.452 W has been obtained at the incident pump power of 8.9 W for an 8.8% transmission of the output coupler at 1064 nm, corresponding to a slope efficiency of 30%. The other output laser characteristics of the laser have also been investigated. The laser with a Nd³⁺:Cr⁴⁺:YAG saturable absorber has a lower threshold pump power and a higher slope efficiency compared to that with a similar small-signal transmission of a Cr⁴⁺:YAG saturable absorber.     

Efficient subnanosecond diode-pumped passively Q-switched Nd:YVO4 self-stimulated Raman laser

Generation of efficient subnanosecond self-stimulated Raman pulses by a diode-pumped passively Q-switched Nd:YVO4/Cr4+:YAG laser is demonstrated. Experimental results reveal that self-frequency Raman conversion can be achieved with a c-cut Nd:YVO4 crystal in a nearly hemispherical cavity. At 2.0 W of incident pump power, the self-stimulated Raman laser produces stable 710-ps pulses at a Stokes wavelength of 1178.6 nm with 7.2 microJ of pulse energy at a 17-kHz repetition rate.     

Q-switching of a diode-pumped Nd : YVO4 laser with GaAs nonlinear output coupler

Passive Q-switching of a diode-pumped Nd : YVO₄ laser was demonstrated using GaAs as an output coupler and as a saturable absorber. When pumped with a 3-W diode laser at 809 nm, the highly compact laser produced 12-μJ pulses of 2.2 ns in duration at 1.064 μm in a single transverse mode, corresponding to a peak power of 5.6 kW.     

A laser-diode-pumped acoustic-optic Q-switched Nd:YVO4 slab laser with a hybrid resonator

A 32.1 W laser-diode-stack pumped acoustic-optic Q-switched Nd:YVO₄ slab laser with hybrid resonator at 1064 nm was demonstrated with the pumping power of 112 W and repetition rate of 40 kHz, the pulse duration was 32.47 ns. The slope efficiency and optical-to-optical efficiency were 37 and 28.7%, respectively. At the repetition rate of 20 kHz and pumping power of 90 W, the average output power and pulse duration were 20.4 W and 20.43 ns, respectively. With the pumping power of 112 W, the beam quality M² factors in CW operation were measured to be 1.3 in stable direction and 1.6 in unstable direction.     

Compact efficient diode-pumped Nd:YVO4 Q-switched blue laser with intracavity frequency tripling

We demonstrate a compact efficient diode-pumped acousto-optically Q-switched intracavity-frequency-tripled Nd:YVO₄ blue laser. The optimum polarization state is experimentally investigated to optimize the output performance. Greater than 280 mW of 447-nm average power at a repetition rate of 25 kHz was generated with a 15-W diode pump power. At 25 kHz, the pulse width is shorter than 15 ns and the peak power is higher than 800 W.     

High-power diode-pumped Q-switched intracavity frequency-doubled Nd:YVO4 laser with a sandwich-type resonator

A compact and efficient diode-pumped acousto-optically Q -switched intracavity frequency-doubled Nd:Y VO(4)/KTP green laser is demonstrated. With 0.5-at. % Nd:Y VO(4), greater than 4.6 W of 532-nm average power at a repetition rate of 50 kHz was generated with 17-W pump power, corresponding to a conversion efficiency of 27%. At 10-30 kHz the pulse width is shorter than 10 ns, and the peak power is higher than 13 kW.     

GaAs被动调Q兼输出耦合Nd∶YVO4激光特性研究

利用可饱和吸收半导体GaAs作为被动调Q元件和FP输出耦合镜,实现了半导体激光器(LD)抽运Nd:YVO4激光调Q运转,获得脉宽度为47ns,重复频率为1183kHz,平均功率为430mW,光束质量为M2=113的TEM00激光基横模输出,调Q抽运阈值为1700mW.并数值求解了含有GaAs被动调Q兼输出耦合的速率方程,分析了GaAs被动调Q机理以及脉宽宽度、重复频率、平均功率随抽运速率、腔长的变化关系,理论与实验结果相一致.为多功能综合型微型调Q固体激光器提供了简单有效的方法. 关键词： 被动调Q 输出耦合 GaAs     

脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.     

Diode-pumped doubly Q-switched YVO4/Nd:YVO4 laser with BBO electric-optic Q-switch and Cr4+:YAG saturable absorber

In the experiment, we have demonstrated the performance of a laser-diode, end-pumped, doubly Q-switched YVO₄/Nd:YVO₄ laser with both a BBO electric-optic (EO) Q-switch and Cr⁴⁺:YAG saturable absorber. At a maximum incident pump power of 15 W and an EO Q-switch repetition rate of 8 kHz, the stable laser pulses with the pulse duration 5.28 ns, the single pulse energy 0.14 mJ, and the pulse peak power 26 kW are obtained. The experimental results show that the double Q-switched laser with EO and Cr⁴⁺:YAG can generate the shorter pulse and the higher peak power in comparison to singly Q-switched laser with EO.     

Robust diode-end-pumped Nd:GdVO4 laser passively mode-locked with saturable output coupler

Passively mode-locked diode-pumped solid-state (DPSS) Nd:GdVO₄ laser by using a saturable output coupler (SOC) in stable two-mirror linear cavity design is demonstrated. The laser was pumped by low-power single laser diode without any active cooling and external optics. Robust CW mode-locked operation was obtained with a repetition of 150–250 MHz, the pulsewidth was 12 ps, the lowest threshold for CW mode-locked was 185 mW. The optimal condition is found when the laser provides the set of characteristics: low CW mode-locking threshold (～260 mW), compact size (total cavity length 60 cm), good efficiency (～20%), and very stable output. At the output power of 270 mW an average power fluctuations within ±2% for long-term operation was obtained.     

High-repetition-rate Nd:YVO4 slab laser with a 1-D top-hat output beam

A high-repetition-rate electro-optic Q-switched Nd:YVO₄ slab laser is demonstrated in this paper. The Nd:YVO₄ slab inside the compact resonator is end-pumped by a 2-bar laser diode stack. The output beam with one dimension (1-D) top-hat intensity distribution at both near field and far field is generated. Continuous wave (CW) output of 13 5 W is obtained under the total pump power of 50 W. At the repetition rate of 40 kHz, the energy per pulse is 0.32 mJ with its pulse width of 26.3 ns. At 20 kHz, we have achieved the maximum pulse energy of 0.56 mJ and 56 kW peak power with 10 ns pulse width.     

An 110 W Nd:YVO4 slab laser with high beam quality output

In this paper we report on experimental results of an end-pumped Nd:YVO₄ slab laser with a hybrid resonator. 110 W output power with beam propagation factor M² of 1.3 and 1.5 in two orthogonal directions was obtained. After a spatial filter the typical beam propagation factors at 50 W operation were 1.09 and 1.2.