高速高饱和单行载流子光探测器的设计与分析

设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.     

High-performance evanescently-coupled uni-traveling-carrier photodiodes

A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36~A/W, a bandwidth of 11.5~GHz and a small-signal 1-dB compression current greater than 18~mA at 10~GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.     

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metalben semiconductor field-effect transistors

An improved structure of silicon carbide metal-semiconductor field-effect transistors (MESFET) is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.     

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal-semiconductor field-effect transistors

An improved structure of silicon carbide metal-semiconductor field-effect transistors (MESFET) is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.     

单晶金刚石氢终端场效应晶体管特性

基于微波等离子体化学气相淀积生长的单晶金刚石制作了栅长为2μm的耗尽型氢终端金刚石场效应晶体管,并对器件特性进行了分析.器件的饱和漏电流在栅压为-6 V时达到了96 mA/mm,但是在-6 V时栅泄漏电流过大.在-3.5 V的安全工作栅压下,饱和漏电流达到了77 mA/mm.在器件的饱和区,宽5.9 V的栅电压范围内,跨导随着栅电压的增加而近线性增大到30 mS/mm.通过对器件导通电阻和电容-电压特性的分析,氢终端单晶金刚石的二维空穴气浓度达到了1.99×10~(13)cm~(-2),并且迁移率和载流子浓度均随着栅压向正偏方向的移动而逐渐增大.分析认为,沟道中高密度的载流子、大的栅电容以及迁移率的逐渐增加是引起跨导在很大的栅压范围内近线性增加的原因.     

基于PSpice的半导体激光高频调制系统设计

为了实现高频率的调制激光输出,设计了一种驱动系统由信号放大、电流调制、过流保护和具有慢启动功能的直流偏置电路高度集成的半导体激光高频调制系统。此系统采用了结构简单的直接调制方式,运用线性调频的高频信号去控制半导体激光器发射激光的强度,从而实现高频调制。在运用OrCAD/PSpice对高频调制驱动系统进行模拟仿真的基础上,最终研制出的半导体激光高频调制系统实现了频率为40.02 MHz、直流偏置为493.326 mA、正弦波调制电流峰峰值为850 mA的高频调制输出,调制激光平均功率为300 mW。     

Electron field emission from single-walled carbon nanotube nonwoven

Field emission from single-walled carbon nanotube (SWNT) nonwoven has been investigated under high vacuum with different vacuum gaps. A low turn-on electric field of 1.05\,V/$\mu $m is required to reach an emission current density of 10 $\mu $A/cm$^{2}$. An emission current density of 10 mA/cm$^{2}$ is obtained at an operating electric field of 1.88\,V/$\mu $m. No current saturation is found even at an emission current of 5\,mA. With the vacuum gap increasing from 1 to 10 mm, the turn-on field decreases monotonically from 1.21 to 0.68\,V/$\mu $m, while the field amplification is augmented. The good field-emission behaviour is ascribed to the combined effects of the intrinsic field emission of SWNT and the waved topography of the nonwoven.     

条形几何尺寸对光通信用GaAs-GaAlAs边发光管性能的影响

本文阐述了条形几何尺寸对GaAs-GaAlAs边发光管性能的影响.计算了不同条宽的侧向电流分布和光场分布情况.计算与实验结果很好相符.通过合理的折衷,在100mA的低注入电流下获得了性能良好的边发光二极管,其标准尾纤的输出功率大于100μW,光带宽超过120MHz.是三次群光通信较为理想的光源器件.     

Narrow-beam divergence 1.55μm laser diodes with integrated self-aligned spotsize converter

This paper describes the high performance of narrow-beam divergence spot size converter(SSC)integratedseparately confined heterostructure(SCH)LD.The upper optical confinement layer (OCL) and thebutt-coupled tapered thickness waveguide were regrown simultaneously,which not only offered theseparated optimization of the active region and the integrated spotsize converter,but also reduced thedifficulty of the butt-joint selective regrowth. The threshold current was as low as 5.4 mA,the outputpower at 55 mA was 10.1 mW, the vertical and horizontal far field divergence angles were as low as 9°and 15°,and the 1-dB misalignment tolerances were 3.6 and 3.4 μm, respectively.     

Oxide aperture scaling effect on high-speed (>16 GHz) vertical-cavity surface-emitting lasers performance

High-speed, oxide-confined, polyimide-planarized 850 nm vertical-cavity surface-emitting lasers (VCSELs) with oxide aperture diameters of 9, 10, 12, 15, 20, and 30 μm have been fabricated and characterized. For a 9 μm oxide aperture diameter, the lasers exhibit a resonance frequency, a 3-dB modulation frequency, and a modulation current efficiency factor (MCEF) up to 12.4, 16.5 GHz, and 10.9 GHz/mA^1/2, respectively, at only 7.9 kA/cm². Threshold voltage and current were 1.45 V and 0.7 mA, respectively. It is demonstrated that increasing the resonance frequency with bias does not guarantee a higher modulation bandwidth. The influence of oxide aperture scaling effect on VCSEL performance is presented.     

Nitriding of Stainless Steel in Electron-Beam Plasma in the Pulsed and DC Generation Modes

The influence of electron-beam parameters on the thickness and phase composition of a hardened layer formed upon the nitriding of austenitic stainless steel 12Cr18Ni10Ti in plasma produced by a beam in a low-pressure (3 Pa) nitrogen-argon mixture is studied. The results obtained in the DC and pulse-periodic modes of beam generation with the same mean current and electron energy are compared. In this case the negative bias voltage applied to the samples is 100 V. The nitriding temperature of 400°C is maintained at a mean beam current of 2.6 A and various combinations of frequency (100–500 Hz) and current pulse durations (0.1–0.3 ms) with an amplitude of 80 A. The mean ion-plasma current densities in the DC and pulsed modes are close in magnitude (2–3 mA/cm² at 400°C). The high pulsed ion-current density (35–70 mA/cm²) creates conditions under which the surface sputtering rate during the pulse exceeds the growth rate of the nitrided layer. The nitriding of steel in the pulsed and DC modes over four hours gives the same result. Hardened layers with a thickness of 7–8 μm and a microhardness of the surface component of 15 ± 1 GPa in which the main phase is a supersaturated nitrogen solid solution (expanded austenite) are formed. A possible explanation is that nitriding in an electron-beam plasma proceeds mainly under the action of long-lived active neutral nitrogen particles rather than as a result of ion bombardment.     

阶梯AlGaN外延新型Al0.25Ga0.75N/GaNHEMTs器件实验研究

本文报道了作者提出的阶梯AlGaN外延层新型AlGaN/GaN HEMTs结构的实验结果. 实验利用感应耦合等离子体刻蚀(ICP)刻蚀栅边缘的AlGaN外延层, 形成阶梯的AlGaN 外延层结构, 获得浓度分区的沟道2DEG, 使得阶梯AlGaN外延层边缘出现新的电场峰, 有效降低栅边缘的高峰电场, 从而优化了AlGaN/GaN HEMTs器件的表面电场分布. 实验获得了阈值电压-1.5 V的新型AlGaN/GaN HEMTs器件. 经过测试, 同样面积的器件击穿电压从传统结构的67 V提高到新结构的106 V, 提高了58%左右; 脉冲测试下电流崩塌量也比传统结构减少了30%左右, 电流崩塌效应得到了一定的缓解.     

Giant magnetoimpedance in amorphous (Co0.93Fe0.7)63Ni10Si11B16 glass-coated microwire

Giant magnetoimpedance (GMI) effect has been measured in a glass-coated amorphous (Co_0.93Fe_0.7)₆₃Ni₁₀Si₁₁B₁₆ microwire as a function of DC magnetic field and up to the frequency of 11 MHz. The sample shows single peak GMI characteristics within the whole range of frequency. The domain structure of the above sample has been changed by applying tensile stresses up to 603 MPa and current annealing with a DC current of 50 mA for various time durations, and the corresponding effect on GMI has been studied in detail. A maximum change of 8.85% in MI of the as-quenched sample has been observed around a frequency of 5.05 MHz. Application of an external tensile stress reduces the GMI value by increasing the inner core domain, whereas heat treatment of the sample enhances the same. The square-shaped magnetic hysteresis loop of the as-quenched sample helps us understanding the MI results.     

Morphological effects on the field emission characteristics of zinc oxide nanotetrapods films

The direct growth of a tetrapod-like ZnO nanostructure has been accomplished by using a thermal oxidation method without any catalysts. Studies on the field emission properties of the ordered ZnO nanotetrapods films found that the shape of the ZnO nanotetrapods has considerable effect on their field emission properties, especially the turn-on field and the emission current density. Compared with the rod-like legs ZnO nanotetrapods, the nanotetrapods with acicular legs have a lower turn-on field of 2.7 V/μm at a current density of 10 μA/cm², a high field enhancement factor of 1830, and an available stability. More importantly, the emission current density reached 1 mA/cm² at a field of 4.8 V/μm without showing saturation. The results could be valuable for using the ZnO nanostructure as a cold-cathode field-emission material.      

Ultraviolet-Cathodoluminescent 330 nm light source from a 2-inch wide CNT electron-beam emission under DC electric field

We report a 2-inch wide-area AlGaN-based ultraviolet (UV) – cathodoluminescence (CL) light source emission using electron beam (EB) pumped source under DC electric field from an AlGaN/GaN multi-quantum-well grown on a sapphire substrate. The EB-pumping is achieved by wide-area carbon nanotubes (CNT) based field emitters and is arranged via a metal mesh, thereby acting as a gate to pump the electron flow. We have carried out UV–CL measurements with a turn-on field emission in the anode voltage ranging between 5 kV and 9 kV at anode current up to 1 mA. The best results are obtained at the low consumption energy of 7 W (anode current 1 mA; anode voltage 7 kV). The 330 nm UV–CL emission shows an output power of ~225 mW, with an as-calculated power efficiency of ~3.6%. The CL measurements show (5–8) % defect luminescence in the visible region.     

室温下溅射法制备高迁移率氧化锌薄膜晶体管

为降低氧化锌薄膜晶体管(ZnO TFT)的工作电压,提高迁移率,采用磁控溅射法在氧化铟锡(ITO)导电玻璃基底上室温下依次沉积NbLaO栅介质层和ZnO半导体有源层,制备出ZnO TFT,对器件的电特性进行了表征。该ZnO TFT呈现出优异的器件性能:当栅电压为5 V、漏源电压为10 V时,器件的饱和漏电流高达2.2 m A;有效场效应饱和迁移率高达107 cm~2/(V·s),是目前所报道的室温下溅射法制备ZnO TFT的最高值,亚阈值摆幅为0.28 V/decade,开关电流比大于107。利用原子力显微镜(AFM)对NbLaO和ZnO薄膜的表面形貌进行了分析,分析了器件的低频噪声特性,对器件呈现高迁移率、低亚阈值摆幅以及迟滞现象的机理进行了讨论。     

Giant magneto-impedance effect in CoMnSiB amorphous microwires

The giant magneto-impedance (GMI) ratio, ΔZ/Z=[(Z(H)−Z(H_max)]/Z(H_max), in a nearly zero magnetostrictive Co_68.5Mn_6.5Si₁₀B₁₅ amorphous microwire has been investigated for the frequency range 0.5–10 MHz, driving current amplitude of 0.5–2.5 mA, bias DC magnetic field up to 2400 A/m and under applied tensile stress up to 132 MPa. A maximum relative change in the GMI ratio up to around 130% is observed at a frequency of 10 MHz, magnetic DC field of about 180 A/m, driving current amplitude of 1 mA and under tension of 60 MPa. The tensile stress dependence of the magnetic field, H_m, corresponding to the maximum ΔZ/Z ratio allows to estimate the magnetostriction constant (λ_s≈−2×10⁻⁷) to be in good agreement with λ_s values estimated by different methods and in amorphous alloys with similar compositions.     

Gbit/s rate bipolar pulse modulation of semiconductor injection lasers

Using a bipolar drive current pulse shape and very low threshold (9 mA) lasers, zero-background pseudorandom optical pulses were generated and detected at a rate of up to 4 Gbit/s without a pattern effect. The drive current pulse consists of a forward pulse followed by a reverse pulse, each of 70 ps duration and about 400 mA amplitude. No DC bias was applied, which is a necessary condition for pattern-effect-free modulation.     

AC losses in multifilamentary HTS-composite tapes based on BiPbSrCaCuO

Some results of AC loss measurements are presented for 19, 61, 127-filamentary Bi-2223/Ag tapes prepared by the ‘powder-in-tube' method. All measurements have been made at T=77 K under sinusoidal transport current with frequency in the range of 30–600 Hz and the current amplitude up to 30 A. The measurements have been carried out both in self field conditions and at the external magnetic field applied to the tape at the different angles. The dependencies of the AC losses on current amplitude and frequency have been obtained. It is found that for all tapes the current amplitude dependencies of the AC losses show good agreement with the Norris prediction for an elliptical or strip geometry. The AC loss dependencies on frequency were linear. The measurements of AC losses in external magnetic field show that the change of AC losses is only through the change of the critical current. So the transport AC losses in the tapes are the ‘saturation losses' that is they are different from classic hysteresis losses.     

Mutual phase locking in high-frequency microwave nano-oscillators as a function of field angle

We perform a qualitative analysis of phase locking in a double point-contact spin–valve system by solving the Landau–Lifshitz–Gilbert–Slonzewski equation using a hybrid-finite-element method. We show that the phase-locking behaviour depends on the applied field angle. Starting from a low field angle, the locking-current difference between the current through contact A and B increases with increasing angle up to a maximum of 14 mA at 30°, and it decreases thereafter until it reaches a minimum of 1 mA at 75°. The tunability of the phase-lock frequency with current decreases linearly with increasing out-of-plane angle from 45 to 21 MHz/mA.