X射线Kirkpatrick-Baez显微镜用超反射镜的研制

 介绍了一种可应用于X射线Kirkpatrick-Baez（KB）显微镜的光学元件—X射线超反射镜。选用的W和B₄C作为镀膜材料,膜对数为20,采用单纯型调优的方法实现了X射线超反射镜设计,用磁控溅射的方法在Si基片上完成了W/B₄C X射线超反射镜的制备。采用高分辨率X射线衍射仪（8 keV）测量了X射线超反射镜的反射特性。制备的X射线超反射镜在掠入射角分别为1.052°和1.143°处,反射角度带宽为0.3°,反射率达到20%,可满足KB型显微镜的要求。     

Design,fabrication and characterization of the X-ray supermirrors

With the development of the multiplayer technology, the multilayer mirrors have been widely used in many fields, such as the soft X-ray astronomical telescope, soft X-ray microscopy, extreme ultraviolet lithography, applications of synchrotron radiation, plasma diagnosis, and so on. However, in the hard X-ray region, especially for the wavelength shorter than 0.1 nm, the optical elements based on the traditional multilayers or the single high-Z metal coatings cannot accommodate the advancemen…     

Design of Grazing-Incidence Broad-Band Multilayers for Hard X-Ray Reflectors

A new method of designing x-ray supermirrors with broad angular or energy response for use as coatings in x-ray optics is presented. The design is based on an analytical method with oversimplified analytical and semi-empirical formulae, and an extensive numerical method is used in the optimization design. A better initial multilayer is obtained with the former method and optimized with the latter method. In the optimization, a good design is achieved with much less computing time. In addition, the saturation effect due to the interfacial roughness in multilayer also emerges in the design of x-ray supermirrors with definite performances. The reflectivity of C/W x-ray supermirrors as a function of photon energy at the fixed grazing incident angle 0.5°is presented.     

Neutron reflectometry with vector polarization analysis: First steps

The most detailed and reliable information about the magnetic state (magnetization depth profiles) of layers can be obtained by neutron reflectometry with vector polarization analysis. Two schemes of realization of this technique are considered. Precession coils designed to manipulate the polarization vector of monochromatic beams are used in scheme I. This scheme was tested at the neutron reflectometer NR-4M (PNPI, Gatchina). The earliest experimental data on the polarization vector rotation are reported, giving direct evidence of the wave function phase shift of a massive particle, the neutron, under total reflection. The basic elements for scheme II are remanent supermirrors. This scheme is designed for use with a white beam and is advantageous for pulse neutron sources. The effect of stray fields produced by remanent supermirrors on the neutron polarization has been theoretically and experimentally evaluated; efficient ways of compensating the stray fields are proposed.     

Optimization of parameters and the ultimate sensitivity of interferometric detectors of gravitational waves

The signal-to-shot-noise ratio is calculated for three types of laser interferometers used in gravitational wave detectors: for two types of Fabry-Perot interferometers (with direct reading of the output signal and with the modulation technique used for outcoupling the signal) and for the Michelson interferometer with Fabry-Perot arms. It is shown that the signal-to-noise ratio can be substantially increased by using “supermirrors” with losses of the order of 10 ^?6. It is very important, in this case, to properly choose the mirror transmittance, because, otherwise, the sensitivity inevitably decreases by orders of magnitude and the requirements of lasers become more stringent. The efforts to increase the signal-to-noise ratio by increasing the power are limited either by an insufficient laser power or by the overheating of interferometer mirrors. Our estimates show that the present-day technical level with laser power of about 1 W provides sufficient sensitivity for detecting gravitational waves.     

Characterization of ion beam sputter deposited W and Si films and W/Si interfaces by grazing incidence X-ray reflectivity, atomic force microscopy and spectroscopic ellipsometry

An ion beam sputtering system, which uses a commercial ECR microwave based plasma ion source, has been designed and fabricated in-house for deposition of soft X-ray multilayer mirrors. To begin with, in the ion beam sputtering system W, Si thin films, W/Si bi-layer and W/Si/W tri-layer samples have been deposited on c-Si substrates as precursors to W/Si multilayer stack. The samples have been characterized by grazing incidence X-ray reflectivity (GIXR), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. By analyzing the results, density, thickness, surface roughness of the single layer samples and interface width of the bi-layer and tri-layer samples have been estimated.     

Si adhesion interlayer effects in hydrogen passivated Si/W soft X-ray multilayer mirrors

The use of hydrogen passivation of the silicon layers in Si/W soft X-ray reflective multilayer mirrors is investigated. Standard passivation, corresponding to Si:H/W structures, led to reduced growth properties of the W layers. The additional use of atomically thin Si adhesion layers, corresponding to Si:H/Si/W, led to improved growth and increased soft X-ray reflectivity. The effects taking place at the interfaces are analysed by bright field planar TEM and in situ X-ray reflectivity, and are described in terms of interface and surface energies, with quantitatively analysis of intermixing, materials density, and geometrical optical effects.     

Pd/W/Si(111)双层膜界面X射线光电子能谱与俄歇电子能谱研究

利用X射线衍射（XRD），X射线光电子能谱（XPS）和俄歇电子能谱（AES）对Pd/W/Si（111）界面进行了研究。实验结果表明，当系统作低温退火时，受W膜的阻挡，未生成硅化物，但Pd/W界面和W/Si（111）界面均有互扩散。升高退火温度，Pd－W原子在Si衬底上形成互溶体，Pd原子已穿过W阻挡层而到达W/Si（111）界面处，随着退火温度的继续升高，首先在W/Si（111）界面处生成PdSi_x,WSi_x也随之生成，这样就形成Pd-W原子分布的“反转”，在薄     

Studies of interface structures of W films grown on patterned and bare Si(100) by TEM

+ Si(100) and bare Si(100) wafers by low pressure chemical vapour deposition (LPCVD) at 230–280 °C. The films were investigated by transmission electron microscopy (TEM). The cross-sectional TEM samples of W/Si(100) exhibited a fine scale interface roughness, which was attributed to the surface preparation. Irregular W plug structures were observed depending on the predeposition procedures. It was observed that an insufficient deposition of W films on the contact surface leads to the presence of aluminium around and underneath the plugs. This was observed by energy dispersive X-ray spectrometry (EDX). A study, using conventional electron diffraction, confirmed that no silicides formed at the interfaces of W-bare Si(l00) wafers. Received: 16 December 1996/Accepted: 6 May 1997     

Normal-incidence silicon-gadolinium multilayers for imaging at 63 nm wavelength

Si/Gd multilayers designed as narrowband reflective coatings near 63 nm were developed. The highest peak reflectance of 26.2% at a 5 degrees incident angle was obtained at 62 nm, and the spectral bandwidth was 7.3 nm FWHM. The fits for x-ray and extreme ultraviolet reflectance data of Si/Gd multilayers indicate the possibility of silicide formation at the Si-Gd interfaces. B(4)C, W, and SiN were deposited as interface barrier layers to improve the reflectance of Si/Gd multilayers. More than an 8% increase in reflectance was observed from the interface-engineered Si/W/Gd and Si/B(4)C/Gd multilayers.     

Single crystals of mesoporous tungstenosilicate W-MCM-48 molecular sieves for the conversion of methylcyclopentane (MCP)

Highly ordered W-MCM-48 mesoporous materials containing isolated W atoms in tetrahedral framework positions were successfully synthesized following the S⁺I⁻ pathway, up to a Si/W of 40. When tungsten content was increased up to a Si/W of 20, the ordered cubic structure was only partially maintained, and for a Si/W of 10 an amorphous phase was obtained. Highly isolated tetrahedral framework tungsten atoms in the W-MCM-48 with a Si/W of 40, have been identified by UV-vis band at 225 nm, IR-TF band at 970 cm⁻¹ and XRD. The W 4f XPS results suggest that the tungsten atoms exist in two oxidation states, W⁴⁺ and W⁵⁺. The morphology of the samples varies as a function of tungsten content. The W-MCM-48 samples with a Si/W ratio of 40 existed as crystals with a unique crystalline morphology consisting of cubes truncated rhombic dodecahedrons belonging to the cubic Ia3d space group, while the samples with a Si/W ratio of 20 exhibited a different morphology consisting of spheres and cubes truncated by rhombic dodecahedrons. A comparison of samples with Si/W of ∞, Si/W of 40 and Si/W of 20 was performed using the conversion of MCP carried out at 450 °C under H₂.     

Influence of working gas pressure on the performance of W/Si multilayers

The effect of Ar pressure on the performance of W/Si multilayers is investigated. W/Si multilayers were deposited by a high vacuum DC magnetron sputtering system. The Ar pressure was changed from 1.0 to 5.0 mTorr with an interval of 1.0 mTorr during the deposition process. Electron probe microanalysis and Rutherford backscattering are performed to determine the Ar content incorporated within these multilayers. The results demonstrate that less Ar is incorporated within the sample when more Ar is used in the plasma, which could be explained by the increase of the collision probability and the decrease in the kinetic energy of Ar ions arriving at the substrate when more Ar exists. The grazing incident X-ray reflectivity (GIXR) at 0.154 nm is used to determine the structural parameters of the layers. The results show that the structures of these multilayers prepared at different Ar pressure are very similar and that the interface roughness increases quickly when the Ar pressure is higher than 3.0 mTorr. The measurements of the extreme ultraviolet (EUV) reflectivity indicate that the reflectivity decreases when Ar pressure increases. The fitting results of GIXR and EUV reflectivity curves indicate that with an increase of Ar pressure, the density and decrement of the refractive index are increased for W and decreased for Si, which is mainly due to (1) the decrease in Ar content incorporated within these multilayers which affects their performance and (2) the increase of collision probability for sputtered W and Si, the decrease of their average kinetic energy arriving at the substrate, and thus the loosing of their layers.     

532nm连续激光晶化非晶硅薄膜的原位拉曼光谱研究

用磁控溅射制备了非晶硅薄膜,用波长为532 nm的连续激光退火和显微Raman光谱原位测试技术和场发射扫描电子显微镜研究了非晶硅薄膜在不同激光功率密度和不同扫描速度下的晶化状态。结果表明,激光照射时间10 s,激光功率密度大于2.929×105W/cm2时,能实现非晶硅薄膜晶化。在激光功率密度为5.093×105W/cm2,扫描速度为10 mm/s时非晶硅开始向多晶硅转化。在5.093×105W/cm2的功率密度下,以1.0 mm/s的扫描速度退火非晶硅薄膜,得到的晶粒直径为740 nm。     

Processing of W/Si and Si/W bilayers and multilayers with single and multiple excimer-laser pulses

Interdiffusion phenomena, thermal damage and ablation of W/Si and Si/W bilayers and multilayers under XeCl-excimer laser (=308 nm) irradiation at fluences of 0.15, 0.3 and 0.6 J/cm² were studied. Samples were prepared by UHV e-beam evaporation onto oxidized Si. The thickness of W and Si layers and the total thickness of the structures were 1–20 nm and 40–100 nm, respectively. 1 to 300 laser pulses were directed to the same irradiation site. At 0.6 J/cm² the samples were damaged even by a single laser pulse. At 0.3 J/cm² WSi₂ silicide formation, surface roughening and ablation were observed. The threshold for significant changes depends on the number of pulses: it was between 3–10 pulses and 10–30 pulses for bilayers with W and Si surfaces, respectively, and more than 100 pulses for multilayers with the same total thickness of tungsten. At 0.15 J/cm² the periodicity of the multilayers was preserved. Temperature profiles in layered structures were obtained by numerical simulations. The observed differences of the resistance of various bilayers and multilayers against UV irradiation are discussed.     

Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(μW/cm²) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(μW/cm²) in ZnO/Si structures with UV intensity varied until 600 μW/cm².     

磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层...     

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

Ge and Si p-channel metal--oxide--semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO7340Q, 7325http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/057302https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111774Ge substrate, transistor, HfSiON, hole mobilityProject supported by the National Basic Research Program of China (Grant No.~2006CB302704).Ge and Si p-channel metal--oxide--semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO$_{x}$ ($1Ge;substrate;transistor;HfSiON;hole;mobilityGe and Si p-channel metal-oxide-semiconductor field-effect-transistors(p-MOSFETs) with hafnium silicon oxynitride(HfSiON) gate dielectric and tantalum nitride(TaN) metal gate are fabricated.Self-isolated ring-type transistor structures with two masks are employed.W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately.Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor(MOS) capacitors may be caused by charge trapping centres in GeOx(1 < x < 2).Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method.The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V.s) and 81.0 cm2/(V.s),respectively.Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.     

Co/C and W/Si multilayers deposited by ion-beam sputtering for the soft X-ray range

We deposited Co/C multilayer mirrors for a wavelength of 4.77 nm and W/Si multilayer mirrors for a wavelength of 1.77 nm by use of ion-beam sputtering. The small-angle diffraction spectrum was used to analyze the structure of the multilayers. With a combination of the experimental diffraction spectra and Apeles’ theory for calculation of the interfacial roughnesses of the multilayers, the interfacial roughnesses of Co/C and W/Si are 0.80 nm and 0.60 nm, respectively, which are lower than that of the substrate. The reflectivity of the Co/C multilayer is measured to be about 20% and that of the W/Si multilayer about 1% at the grazing incidence angle of about 12°. Received: 30 May 2000 / Accepted: 1 August 2000 / Published online: 11 February 2002     

Silicon interaction with the (0001) surface of La and Gd layers

A study is reported on a system consisting of a Si layer on the surface of rare-earth metals (REMs), which is the reverse of a rare-earth metal on silicon, the system of current widespread interest. Interaction of silicon with the (0001) surface of trivalent La and Gd single-crystal layers grown on a W(110) surface is studied by Auger spectroscopy combined with layer-by-layer argon-ion etching of the system and photoelectron spectroscopy. It is found that silicon interacts with the La(0001) and Gd(0001) surfaces even at room temperature with the formation of silicide, but no mutual mixing of the silicon and substrate atoms occurs. When the Si/La(0001) and Si/Gd(0001) systems are heated at 400°C, silicon does not diffuse into the bulk of the metal substrate or to the REM/W(110) interface.     

Application of synchrotron radiation to investigation of the mechanism of increase in the yield of alkali metal ions in electron-stimulated desorption

Core-level photoelectron spectroscopy with synchrotron radiation (hv = 140 eV) has been applied to study the variation in the Si⁺ charge state in silicon films deposited on the W(100) surface after thermal annealing of the substrate. The purpose of this study is to check the mechanism responsible for the sharp increase in the yield of Na⁺ ions in electron-stimulated desorption from a sodium layer adsorbed on the Si/W(100) surface after high-temperature annealing. The evolution of the W 4f _7/2 and Si 2p photoelectron spectra and the valence band photoemission spectra is investigated for two silicon coverages (1 and 3 ML) on the W(100) surface in the temperature range 300<T<2200 K. It is shown that annealing of 1 ML Si on the W(100) surface results in the formation of a W-Si covalent bond, which can weaken the Si-Na bond and lead to an increase in the equilibrium distance X ₀ and, hence, to an increase in the yield of Na⁺ ions in electron-stimulated desorption. The variation in the photoelectron spectra under annealing of 3 ML Si differs from that observed after annealing of 1 ML Si in the direction of charge transfer, thus correlating with the opposite effect of annealing of 3 ML Si/W on the Na⁺ yield in electron-stimulated desorption.