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1.
In this study, we will develop the influences of the excess x wt% ( x=0, 1, 2, and 3) Bi 2O 3-doped and the different fabricating process on the sintering and dielectric characteristics of 0.95 (Na 0.5Bi 0.5)TiO 3–0.05 BaTiO 3 ferroelectric ceramics with the aid of SEM and X-ray diffraction patterns, and dielectric–temperature curves. The 0.95 (Na 0.5Bi 0.5)TiO 3–0.05 BaTiO 3+ x wt% Bi 2O 3 ceramics are fabricated by two different processes. The first process is that (Na 0.5Bi 0.5)TiO 3 composition is calcined at 850 °C and BaTiO 3 composition is calcined at 1100 °C, then the calcined (Na 0.5Bi 0.5)TiO 3 and BaTiO 3 powders are mixed in according to 0.95 (Na 0.5Bi 0.5)TiO 3–0.05 BaTiO 3+ x wt% Bi 2O 3 compositions. The second process is that the raw materials are mixed in accordance to the 0.95 (Na 0.5Bi 0.5)TiO 3–0.05 BaTiO 3+ x wt% Bi 2O 3 compositions and then calcining at 900 °C. The sintering process is carried out in air for 2 h from 1120 to 1240 °C. After sintering, the effects of process parameters on the dielectric characteristics will be developed by the dielectric–temperature curves. Dielectric–temperature properties are also investigated at the temperatures of 30–350 °C and at the frequencies of 10 kHz–1 MHz. 相似文献
2.
Nd 2Fe 14B Φ phase crystallites were formed in Nd 16.7Fe 65.5B 17.8 thin films prepared by RF sputtering with subsequent heat treatment. The 2 μm-thick films were deposited onto 0.1 mm Mo sheets at an average substrate temperature ( Ts) of 365°C. The enhanced magnetic properties of the magnetically anisotropic thin films were investigated using different heating rates ( hr) of 10°C, 20°C, 50°C and 100°C/min in an annealing experiment. Transformation from the amorphous phase to the crystalline phase is clearly manifested by the formation of fine crystallites embedded as a columnar matrix of Nd 2Fe 14B phase. High-resolution scanning electron microscope data of the cross-section of the annealed films show columnar stacking of Nd 2Fe 14B crystallites with sizes <500 nm. Transmission electron microscope observations revealed that the microstructure of these films having out-of-plane magnetization consists of uniformly distributed Φ phase with grain size around 400 nm together with small Nd rich particles. This grain size of Φ phase is comparable to the single domain particle diameter of Nd 2Fe 14B. Significant change in iHc, 4π Mr and 4π Ms with hr was confirmed. Annealing conditions with a heating rate of 50°C/min to an annealing temperature ( Ta) of 650°C for 30 min was consequently found to give optimum properties for the NdFeB thin films. The resulting magnetic properties, considered to be the effect of varying hr were iHc= 1307–1357 kA/m, 4π Mr=0.78–1.06 T and 4π Ms=0.81–1.07 T. 相似文献
3.
The perovskite-type oxides were synthesized in the series of Ln 1−xSr xCoO 3(Ln = Sm, Dy). The formation of solid solutions in Dy 1 − xSr xCoO 3 was limited, compared with that in Sm 1 − xSr xCoO 3. The electrical conductivities of the sintered samples were measured as a function of x in the temperature range 30 to 1000 °C. The highest conductivity of around 500 S/cm at 1000 °C was found in Sm 0.7Sr 0.3CoO 3. The reactivity of all the samples with YSZ was examined at 800–1000 °C for 96 h. The Sr-doped perovskite oxides were more reactive with YSZ and produced SrZrO 3 at 900 °C after 96 h. However, no reaction product between SmCoO 3 and YSZ was observed at 1000 °C for 96 h. The cathodic polarization of the oxide electrodes, sputtered on yttria stabilized zirconia (YSZ), was studied at 800–1000 °C in air. SmCoO 3 shows no degradation of the electrode performance at higher temperatures. The thermal expansion measurements on the sintered samples were carried out from room temperature to 1000 °C. Large thermal expansion coefficients were found in these samples. 相似文献
4.
A ceramic powder mixture corresponding to the stoichiometric ratio of YBa 1.95K 0.05Cu 3O y superconducting ceramic with 10% w/w Ag was heat treated at 950°C for 3 h in flowing oxygen. The resultant superconducting powder was consolidated in a silver tube by the explosive compaction technique (pre-heat treated ceramic). The same fabrication technique, i.e. explosive compaction, was employed to the initial stoichiometric powder mixture, without prior heat treatment and the green product was subsequently subjected to a series of heat-treating cycles (920°C, 70 h), in order to obtain the required superconducting properties (post-heat treated ceramic). The microstructure and physical properties of the pre- and post-heat treated ceramics were analyzed and compared using various characterization techniques. X-ray diffraction performed on the pre-heat and post-heat treated ceramics indicated that maximum 123-phase content retained in the former case (pre-heat treated ceramic), whilst DC magnetic susceptibility measurements have shown the characteristic Meissner shielding effect at 99 and 92 K, respectively. Furthermore, the pre-heat treated compacted billet was characterized by a critical current density, Jc equal to 2800 A/cm 2 at 77 K after suitable annealing at 850°C for 10 h in oxygen stream. 相似文献
5.
Nano-grained BaTiO 3 (BTO) ceramics were synthesized by pressureless sintering BTO nano-powders coated with Mn materials. The BTO ceramics, which were prepared at 800 °C from nano-powders of 40 nm size, are of a cubic structure with a small fraction of tetragonal phase, similar to that of the starting BTO nano-powders of the same size. On the other hand, the BTO ceramics with about grains of 1300 nm size, which were prepared at sintering temperature ranging from 1100 to 1200 °C, have a mainly tetragonal phase. By increasing the sintering temperature and/or the amount of the coating materials, the crystallinity of the tetragonal phase was increased. The relation of the dielectric features of the nano-grained BTO ceramics with the structural variation is discussed in terms of process parameters. 相似文献
6.
D 2 temperature-programmed desorption (TPD) was used to probe the structure of the Si(011)-(16 × 2) surface. Deuterium was adsorbed at 200°C to coverages θ D ranging up to complete saturation (approximately 1.1 ML) and the sample heated at 5°C s −1. TPD spectra exhibited three second-order desorption peaks labelled β 2, β* 1 and β 1 centered at 430, 520 and 550°C. Of the proposed models for the Si(011)-(16 × 2) reconstruction, the present TPD results as a function of θ D provide support for the adatom/dimer model with the β 2 peak assigned to D 2 desorption from the dihydride phase, while the β* 1 and β 1 peaks arise from adatom and surface-atom monohydride phases. 相似文献
7.
Vanadium oxide films with temperature coefficient of resistant of −2.6% K −1 have been fabricated on Si 3N 4-film-coated Si substrates by ion beam sputtering in a controlled Ar/O 2 atmosphere, at a relatively low growth temperature of 200 °C. The as-deposited films show no semiconductor-to-metal phase transitions even heated up to 150 °C. X-ray diffractometry shows that the main compound of the VO x film is a metastable phase of vanadium dioxide (VO 2(B)) and the VO 2(B) film can be transformed into VO 2 film by post-growth annealing at 450 °C in flowing Ar atmosphere. 相似文献
8.
The short wavelength transmittance limit or cut-off wavelength, λ co, of LiF, MgF 2, CaF 2, LaF 3, BaF 2, sapphire, synthetic crystal quartz and fused quartz has been measured from about 100°C to about 10°K. λ co is not a well denned quantity, so for the purpose of this experiment it has been arbitrarily taken as the wavelength where transmittance could just be measured, usually 0.1-0.5 per cent. With one exception λ co shifted to shorter wavelengths as the sample was cooled; the shift varied from about 40 to 80 Å over the temperature range from 100°C to 10°K, depending on the material, with the largest shift occurring in BaF 2;. The exception was LaF 3 which showed no measurable change in λ co wth temperature. Over the temperature range from 20° to 100°C the slope of λ co, with temperature for all materials was fairly constant, but below 20°C it decreased, approaching zero as the temperature approached 20°-10°K. In the case of synthetic crystal quartz, for example, the slope changed from about 0.28 Å/°K at room temperature to about 0.055 Å/°K at 80°K. 相似文献
9.
New phase formation at the La 0.9Sr 0.1MnO 3/YSZ interface and its effects on the cathodic performances were studied at 900 °C in air. The resistance caused by the interfacial product layer kept increasing with time to reach up to 40% of the total resistance after 500 h. The interfacial product was identified as La 2Zr 2O 7 by XRD measurement. The electrical conductivity of La 2Zr 2O 7 (2.4 × 10 −5 S cm −1 at 1000 °C), measured by AC impedance and current interruption methods, was 4 to 7 orders of magnitude smaller than those of La 0.9Sr 0.1MnO 3 electrode or YSZ electrolyte. Either the electronic conductivity or the electrochemical O 2 reduction activity of La 2Zr 2O 7 was negligible. Combining these results, a conclusion was made that the cathodic degradation comes mainly from the growth of interfacial product layer and its contribution to the cell resistance increment is ohmic in nature. 相似文献
10.
The annealing characteristics and the superconducting properties of Tl 2Ca 2Ba 2Cu 3O 10 thin films sputter-deposited onto yttrium- stabilized ZrO 2 substrate at up to 500°C from two stoichiometric oxide targets are reported. The films deposited at 400–500°C were found to require a lower post-annealing temperature than the films deposited at lower temperatures to attain the highest Tc superconducting state, due to a more pronounced Ba diffusion toward the substrate as indicated by their secondary ion mass spectrometry depth profiles. The highest Tc achieved tends to degrade with increasing substrate temperatures, a zero resistance Tc of 121 and ≈90 K, respectively, being observed for the films deposited at -ambient temperature and at 500°C. The formation of the highest Tc phase (Tl 2Ca 2Ba 2Cu 3O 10) generally is associated with a sheet type of crystal growth morphology with smooth and aligned surfaces which can be obtained only from the films capable of sustaining prolonged annealing at 900°C. Annealing at lower temperatures (≈860°C) results in the formation of rod or sphere type of morphologies with rough and randomly oriented crystals and the lower Tc phases such as Tl 2Ca 1Ba 2Cu 2O 8. 相似文献
11.
Densification of Na 4Zr 2Si 3O 12 (NZS) solid electrolytes was performed by dispersing TiO 2 (0.8–5.9 wt. %, corresponding to 5–30 mol %) in NZS powders prior to sintering at 1200°C. Increases in pellet density, from ca. 65 to 94% of the theoretical (X-ray density) value, and in electrical conductivity from 10 −7 to 10 −6 S/cm at 50°C were observed for small additions of TiO 2, which acts as a sintering aid. AC impedance spectroscopy reveals that the enhancement is not a bulk effect but instead is associated with a reduction in inter-granular constriction resistances within porous NZS ceramics. The presence of adsorbed water species in NZS powders prepared via a sol-gel route is found to have a dramatic effect on the conductivity enhancement. 相似文献
12.
The phase evolution during melting and recrystallization of (Bi,Pb) 2Sr 2Ca 2Cu 3O 10 ((Bi,Pb)-2223) core in a Ag-sheathed monofilamentary tape has been investigated. The tape was fabricated by PIT process with powders containing nearly pure (Bi,Pb)-2223 phase. Short samples were melted at 805 °C, 808 °C, 812 °C, 816 °C, 831 °C, slowly cooled at 1.5 °C/h under flowing 1.6% O 2 balanced with argon and quenched in air at room temperature. X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS) were applied for the phase identification. The results show that (Bi,Pb)-2223 core is partially melted into a liquid and alkaline earth cuprates (AECs), mainly 2:1-AEC, at 805 °C, 808 °C, 812 °C, and well reforms directly from the melt during the slow cooling. More (Bi,Pb)-2223 phase is decomposed at temperatures higher than 816 °C, but cannot recrystallize, indicating that a partial melting at some temperatures around a given temperature range is essential to (Bi,Pb)-2223 phase reformation. The melt composition moves from that between “2223” and “2212” stoichiometries towards 2212-like stoichiometry with increasing temperature. This seems to lead to the conclusion that (Bi,Pb)-2223 phase decomposes incongruently into a 2212-like liquid and (Ca,Sr)-cuprates. 2:1-AEC plays the most important role in (Bi,Pb)-2223 melt-recrystallization process. Our results also reveal that plate-like shape (Bi,Pb)-2223 grains can be obtained via melting and recrystallization if the optimum processing conditions are used. 相似文献
13.
The structural phase transition in tin-modified zirconium titanate was investigated using high-temperature X-ray, DTA, DSC and electrical conductivity. In a dilute solid solution of Sn ( x 0.2) in Zr 1−xSn xTiO 4, we ascribed to the successive phase transition from normal to incommensurate the break of electrical conductivity, thermal anomalies, and specific heat anomalies occurring at temperatures of 1121 °C, 1124 °C and 1125 °C on the heating run, and at temperatures of 1121 °C, 1116 °C and 1117 °C on the cooling run, respectively. Furthermore, the super-lattice reflection intensity was inversely proportional to the Sn content, cooling rate and electrical activation energy. With a composition of Zr 0.8Sn 0.2TiO 4, the phase transition from normal to incommensurate was completely inhibited. 相似文献
14.
The phase transition of LiNiO 2 has been studied by using impedance spectroscopy, DTA, and X-ray diffraction methods. At 720°C the hexagonal phase changes in air to the cubic phase. The phase transition process is rather slow and partially reversible. A peculiar conductivity behavior was observed. From 324°C the conductivity deviates from Arrhenius behavior and is temperature-invariant until 613°C. Subsequently, it decreases rapidly with increase of the temperature. This phenomenon is related to the occupation of Ni 2+ in Li + positions. The optimal sintering temperature for LiNiO 2 is suggested to be 700°C. 相似文献
15.
A powder of nominal composition (ZrO 2) 0.886(Sc 2O 3) 0.104(Al 2O 3) 0.01 was synthesized by spray drying with the purpose of testing the performance of solid oxide fuel cells containing scandia-stabilized zirconia (ScSZ) as electrolyte. The phases resulting from calcination and sintering at different temperatures were investigated by XRD, impedance and Raman spectroscopy. At sintering temperatures of 1200–1400 °C nearly equal amounts of cubic and rhombohedral ScSZ were detected, whereas heat treatment higher than 1500 °C led to a cubic single-phase material. A preliminary reaction mechanism of phase formation is proposed with respect to the various results depending on heat treatment. 相似文献
16.
LaAlO 3 crystals have been investigated with differential scanning calorimetry (DSC), high-precision X-ray powder diffraction (XRD) and scanning force microscopy (SFM). The DSC measurements show the second-order phase transition of LaAlO 3 at 544°C, where LaAlO 3 changes its symmetry from the cubic Pm3m high-temperature phase to the pseudocubic rhombohedral
low-temperature phase. This paraelastic to improper ferroelastic phase transition causes twinning in the {100} and {110} planes of the pseudocubic lattice. The twin angles between the surface {100} pseudocubic planes of twin domains were measured by SFM on the surface of a macroscopic (100) cubic cut crystal plate. The misorientation angle ω100 between {100} twins is 0.195(8)°, while {110} twinning gives an angle of ω110=0.276(7)°. The two twin kink angles correspond to a rhombohedral angle of the pseudocubic cell of the
phase as 1=90.0973(40)° and 2=90.0975(30)°, respectively. The XRD result for this rhombohedral angle is =90.096(1)°. The orientation of the misfit steps formed during annealing after mechanical surface polishing depends on the domain orientation and pattern during polishing. Any heating close to or above Tc changes the domain pattern. Footprints of previous domain patterns can thus be found on the surface in the form of surface corrugation and changes in the shape and orientation of misfit steps. 相似文献
17.
The dehydration of molybdic acid, MoO 3---H 2O, was studied by thermal analysis, X-ray diffractometry and FTIR spectroscopy. The results show that an intermediate phase, MoO 3-2/3H 2O is formed at 216 °C and the monoclinic form of MoO 3 is grown above 350 °C. The mechanism of dehydration and structural rearrangement were confirmed by the features of the infrared spectra showing formation of corner-shared MoO 6 octahedra. 相似文献
18.
The chemical compatibility between YBa 2Cu 3O 6.8 (Y123) and Pt, Ag or Au was studied using quasi-infinite diffusion couples which were encapsulated and annealed at 650 to 800°C for 5 to 80 h. The phase formation at the interface was analyzed in cross sections of these couples using optical and scanning electron microscopy together with energy- and wavelength dispersive X-ray microanalysis. In addition, bulk powder mixtures of Y123 with Pt, Ag or Au were annealed at 800°C for 100 h and phase analysis was performed using X-ray diffraction. At the Pt/Y123 interface a reaction zone grows slowly but decisively at 800°C. Its microstructure is multiphase with Y---Cu-oxides and a fine-grained dispersion of Y2BaCuO5 (Y211) with Ba---Cu-oxides. Additional Ba---Pt oxides and other phases are seen in powder mixtures annealed for longer times. Barium is suspected to diffuse out from the superconductor along grain boundaries from as deep as 1 mm, causing the decomposition of Y123 into Y---Cu-oxides in the depleted regions. Ag and Au form a stable contact at the interface to Y123 with no reaction zone or new phases. Interdiffusion at the Ag/Y123 interface at 800°C was too low to be clearly detected. In contrast, Au diffuses very fast into Y123 and at 800°C the solubility is 4.2 mass% Au. Yttrium and barium diffuse much slower into the (Au) phase, Cu diffusion was not detected. Weak traces of decomposition products, mostly Y211 and Ba---Cu-oxides, were observed in bulk powder mixtures of Y123 with Ag or Au annealed at 800°C for 100 h in closed capsules. These decomposition products are considered to be due to the high oxygen pressure in the closed capsule, exceeding the stability limit of Y123, and not due to the reduction of Y123. Both Ag and Au are virtually non-reactive with Y123. 相似文献
19.
Conditions for forming YbBa 2Cu 4O 8, Yb 2Ba 2Cu 3O 7−δ and YbBa 2Cu 3O 7−δ were determined in oxygen at 1.0 atm pressure by experiments with oxidized Yb---Ba---Cu---Ag alloys. YbBa 2Cu 3O 7−δ formed in less than 10 s when oxidized alloy ribbons were baked in the 805°C–890°C range. Large amounts of Ba 2Cu 3O 5 formed below 870°C. Yb 2Ba 4Cu 7O 15−δ and YbBa 2Cu 4O 8 then formed in the 10 2s–10 3s range at temperatures in the 840°C–870°C and <840°C ranges, respectively. Ba 2Cu 3O 5 decomposition supplied Cu 2+ and O 2− for the rapid transformation of YbBa 2Cu 3O 7−δ grains into Yb 2Ba 4Cu 7O 15−δ grains by intercalation. Intercalation was much slower in the absence of Ba 2Cu 3O 5. All of these transformation products underwent coarsening with increasing bake time. Rapid YbBa 2Cu 4O 8 and Yb 2Ba 4Cu 7O 15−δ formation, compared to the slow formation of these phase types when Yb was substituted by Y, Is due to the differing effects of Y and Yb on formation kinetics. Superconducting oxide-silver composite ribbons containing mainly YbBa 2Cu 3O 7−δ, Yb 2Ba 4Cu 7O 15−δ or YbBa 2Cu 4O 8 can be prepared from Yb---Ba ---Ba---Cu---Ag alloys. 相似文献
20.
In 2S 3 layers have been grown by close-spaced evaporation of pre-synthesized In 2S 3 powder from its constituent elements. The layers were deposited on glass substrates at temperatures in the range, 200–350 °C. The effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied. The synthesized powder exhibited cubic structure with a grain size of 63.92 nm and S/In ratio of 1.01. The films grown at 200 °C were amorphous in nature while its crystallinity increased with the increase of substrate temperature to 300 °C. The films exhibited pure tetragonal β-In 2S 3 phase at the substrate temperature of 350 °C. The surface morphological analysis revealed that the films grown at 300 °C had an average roughness of 1.43 nm. These films showed a S/In ratio of 0.98 and a lower electrical resistivity of 1.28 × 10 3 Ω cm. The optical band gap was found to be direct and the layers grown at 300 °C showed a higher optical transmittance of 78% and an energy band gap of 2.49 eV. 相似文献
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