Large magnetic entropy change in Nd<Subscript>2/3</Subscript>Sr<Subscript>1/3</Subscript>MnO<Subscript>3</Subscript>

In order to search for new materials for the application of magnetic refrigeration, the polycrystalline perovskite compound Nd_2/3Sr_1/3MnO₃ was prepared by a solid-state method. The dependence of the magnetization on the applied field and temperature was measured near the Curie temperature. In terms of Maxwells equation, the temperature dependence of the absolute value of the isothermal magnetic entropy change |S_M| at various applied fields from 1 T to 5 T was determined. The results showed that a large magnetic entropy change was observed in this compound. The maximum magnetic entropy change |S_M^max|can reach 3.25 J/kgK with an applied field of 1 T at the Curie temperature of 257.5 K, which equals that of Gd. At 5 T applied field, it is 7.57 J/kgK. Such good magnetocaloric properties make this compound a promising candidate for the application of magnetic refrigeration in the room-temperature range. PACS 74.25.Ha; 75.30.-m; 75.30.Sg; 75.50.-y; 75.60.-d     

Growth of polycrystalline LaNi<Subscript>1-x</Subscript>Co<Subscript>x</Subscript>O<Subscript>3</Subscript> (<Emphasis Type="BoldItalic">x</Emphasis> =0.3,0.5) thin films on Si(100) by pulsed laser deposition

Polycrystalline LaNi_1-xCo_xO₃ (x=0.5,0.3) thin films have been deposited on polished Si(100) substrates by pulsed laser deposition. The films are grown at 650 °C in ambient oxygen pressure of 0.4 mbar with an incident laser fluence of 1.5 J/cm² delivered by a KrF excimer laser. The lattice parameters of the as-grown films are slightly larger (0.05–0.4%) than those of the powders used to prepare the targets. The films exhibit weak texturing along the (012) direction. The low-temperature magnetic properties of the films, i.e. the coercive force, the remanence and the saturation magnetization, are enhanced compared to the powders. Furthermore, the x=0.3 film exhibits a low, almost temperature-independent resistivity above 200 K [(300 K)30 cm] and thus we propose it as a potential candidate material for electrode applications, e.g. in ferroelectric devices. PACS 68.55.-a; 73.61.-r; 81.15.Fg     

Fluorescence studies of polycrystalline Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composite constituents: piezo-spectroscopic calibration and applications

Optical fluorescence microscopy (OFM) was used to quantify the effect of applied stress or strain upon the position of the R fluorescence line of Al₂O₃ composite constituents (fibers and matrices) prior to composite processing. Polycrystalline Nextel^TM Nextel 720 fibers were tested under tension and compression by means of a cantilever beam technique, whereas the polycrystalline matrix was tested in compression. The position of the R fluorescence line was correlated to applied strain and stress in order to provide the piezo-spectroscopic calibration curve and the corresponding coefficients for both sensors, which form the basis for interpretation of frequency shifts from full, all-alumina, composites. The piezo-spectroscopic coefficients of the polycrystalline matrix were found to be 2.57 cm^-1GPa^-1 and 2.52 cm^-1GPa^-1 for the R1 and R2 lines respectively, whereas the coefficients for the polycrystalline Al₂O₃ Nextel 720 fibers were found to be 3.07 cm^-1GPa^-1 and 2.91 cm^-1GPa^-1 for the R1 and R2 lines, respectively. The effects of collection probe size, as well as penetration depth, are discussed. The established piezo-spectroscopic behavior is used inversely to quantify the residual stresses in the as-received fibers due to the presence of sizing, as well as in the thermally grown alumina layer of an industrial thermal barrier coating. PACS 87.64.Ni; 81.05.Je; 78.66.Sq     

A Generalized Hypergeometric Function II. Asymptotics and <Emphasis Type="Italic">D</Emphasis><Subscript><Emphasis Type="Italic">4</Emphasis></Subscript> Symmetry

In previous work we introduced and studied a function that generalizes the hypergeometric function. In this paper we focus on a similarity-transformed function , with parameters ⁴ related to the couplings c⁴ by a shift depending on a ₊ , a _– . We show that the -function is invariant under all maps w(), with w in the Weyl group of type D ₄ . Choosing a ₊ , a _– positive and real, we obtain detailed information on the |Re v| asymptotics of the -function. In particular, we explicitly determine the leading asymptotics in terms of plane waves and the c-function that implements the similarity R.     

Temperature effects in proton exchanged LiNbO<Subscript>3</Subscript> waveguides

Temperature effects on single, homogeneous phases of proton exchanged LiNbO₃ waveguides have been studied. The refractive index of -phase guides on z-cut and x-cut congruent substrates monotonically increases with temperature, the thermo-optical coefficient being similar to that of the substrate. In ₂-phases on z-cut congruent substrates and in ₁-phases on z-cut and x-cut congruent and quasi-stoichiometric substrates, the thermo-optical coefficient is smaller than that of the substrate below 60 °C and higher above this temperature. A rather similar effect has been observed in ₁-phases on z-cut and x-cut congruent substrates in the linear expansion coefficient. The microscopic origin of the phase transition is not known for the moment. PACS Provide PACS codes please.     

Structural and thermoelectric properties in (Sb<Subscript>1-x</Subscript>Bi<Subscript>x</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> thin films

We have investigated the structural and thermoelectric properties of (Sb_1-xBi_x)₂Te₃ thin films on CdTe(111)B. Analysis of X-ray diffraction patterns (–2 scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.1) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power, resistivity, and Hall coefficient of the films were performed with respect to the binary composition, x. For the samples in the range 0.2<x<0.3, the room-temperature thermopower values were in the range 159–184 V/K, the room-temperature carrier concentrations were 3.93–5.13×10¹⁹ cm^-3, and the room-temperature mobilities were 24.6–64.0 cm²V^-1s^-1. PACS 72.20.Pa; 72.80.Jc; 73.6l.Le     

Relationship between low frequency dielectric dispersion and ferroelectric phase transition in pulsed-laser-deposited Bi<Subscript>4-x</Subscript>La<Subscript>x</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin film

The frequency and temperature dependence of the complex dielectric constant of Bi_4-xLa_xTi₃O₁₂ (BLT, x=0.9) ferroelectric thin film was studied in the frequency range of 10^-110⁶ Hz and the temperature range of 298673 K. A low frequency dielectric dispersion (LFDD) was found. A model was proposed to account for this observed phenomena. The complex dielectric constant data obtained in the measured frequency and temperature ranges have been found to fit very well to the dielectric dispersion relation: ^*=+i/₀+[B(i)^n-1]/₀. The knee in the log of the electrical conductivity versus the reciprocal temperature curve occurs at T_c. The activation energies associated with charge conduction are E_a,II=0.73 eV below T_c and E_a,I=0.95 eV above T_c. The occurrence of an anomaly in both the n and parameters near T_c indicates a coupling between charge carries and phonons. PACS 77.55.+f; 77.80.-e; 77.22.Jp     

Crystal structure and dielectric properties of a new complex perovskite oxide Ba<Subscript>2</Subscript>LaSbO<Subscript>6</Subscript>

The crystal structure and dielectric properties of a new perovskite material Ba₂LaSbO₆ are reported. Ba₂LaSbO₆ was synthesized for the first time by conventional solid state reaction process. X-ray diffraction (XRD) measurements and Rietveld analysis revealed that, contrary to the other Ba₂RESbO₆ (RE=Rare-Earth other than La) complex perovskites, which are cubic, Ba₂LaSbO₆ crystallizes in a monoclinic system having space group P2₁/n. Dielectric properties of Ba₂LaSbO₆ at frequencies up to 40 GHz and in temperatures ranging from 50 to 350 K were determined by analyzing the resonant modes in cavities totally filled with the measured material. The dielectric constant ()=15.8±0.2% and at 77 K loss factor (tg)9×10^-4. Preliminary studies reveal that at the processing temperatures, Ba₂LaSbO₆ do not react with YBa₂Cu₃O_7- (YBCO) and Bi₂Sr₂CaCu₂O_x [Bi (2212)] superconductors. Having appropriate dielectric properties along with chemical stability with superconductors Ba₂LaSbO₆ can be used as a precursor as substrate for deposition of various passive HTS devices, or as an insulator in the active SIS structures. PACS 61.66.Fn; 61.10.Nz; 77.22.-d; 74.72.-h     

Structure,transport and magnetic properties of the double perovskite (Ca<Subscript>2-2x</Subscript>Sr<Subscript>2x</Subscript>)FeMoO<Subscript>6</Subscript>

In this paper we report the results of a detailed investigation of the double perovskite (Ca_2-2xSr_2x)FeMoO₆ system. Chemical size effects on structural, electrical, and magnetic properties caused by the substitution of isovalent, larger Sr ions into the smaller Ca sites, resulting in (Ca_2-2xSr_2x)FeMoO₆, have been examined. The compounds crystallize in the monoclinic space group P2₁/n for 0.0x<0.2, the orthorhombic space group Pbnm for 0.2x<0.4, and the tetragonal space group I4/m and I4/mmm for x0.4. Examination of the resistivity of all compounds reveals a metallic behavior which is well described by a Tⁿ dependence except for x=1.0. These n values change from 1 to 2 as T decreases lower than T_c. This is indicative of a variation in the transport mechanism at T_c. The ferrimagnetic transition temperature T_c increases with increasing x from 318 (x=0.0) to 393 K (x=1.0). For all samples, the saturation magnetization at 82 K obeys M_s3.5_B/(formula unit), compared to a theoretical spin-only moment of 4_B/(formula unit) for a perfectly ordered compound. PACS 74.25.Fy; 74.25.Ha     

Equilibrium points of the tilted perfect fluid Bianchi VI<Subscript><Emphasis Type="Italic">h</Emphasis></Subscript> state space

We present the full set of evolution equations for the spatially homogeneous cosmologies of type VI_h filled with a tilted perfect fluid and we provide the corresponding equilibrium points of the resulting dynamical state space. It is found that only when the group parameter satisfies h > –1 a self-similar solution exists. In particular we show that for h > – there exists a self-similar equilibrium point provided that whereas for h < – the state parameter belongs to the interval (1, . This family of new exact self-similar solutions belongs to the subclass n = 0 having non-zero vorticity. In both cases the equilibrium points have a six-dimensional stable manifold and may act as future attractors at least for the models satisfying n = 0. Also we give the exact form of the self-similar metrics in terms of the state and group parameter. As an illustrative example we provide the explicit form of the corresponding self-similar radiation model ( = ), parametrised by the group parameter h. Finally we show that there are no tilted self-similar models of type III and irrotational models of type VI_h.     

Collective structures of the <Superscript>131</Superscript>Cs nucleus

The collective structures of ¹³¹Cs have been investigated by in-beam -ray spectroscopic techniques following the ¹²⁴Sn (^11B , 4n) reaction at a beam energy E_lab = 57MeV. The previously established rotational bands, built on g_7/2, d_5/2 and the unique-parity h_11/2 orbitals, have been extended and evolve into new bands involving rotationally aligned (h_11/2)² and (h_11/2)² quasiparticles. In addition, a new multiquasiparticle band based on the g_7/2 g_7/2 h_11/2 configuration has also been observed. Theoretical interpretations for the assigned configurations are discussed in the framework of Total Routhian Surface (TRS) and Tilted Axis Cranking (TAC) model calculations. TAC model calculations predict a decrease in the B(M1) values with increasing rotational frequency for the g_7/2/d_5/2 (h_11/2)² and h_11/2 (h_11/2)² bands, thus indicating a magnetic rotation character for these bands.     

Effect of substitution of vanadium on the structure and electrical properties of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

The ferroelectric and dielectric properties of Bi_4-xLa_xTi₃O₁₂ (BLT) and Bi_4-xLa_xTi_2.97V_0.03O₁₂ (BLTV) thin films deposited on (111)Pt/Ti/SiO₂/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 C/cm²) than the BLT thin films (6.5 C/cm²), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleighs law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration. PACS 77.80.Bh; 77.55.+f     

Microscopic bonding and macroscopic strain relaxations at Si-SiO<Subscript>2</Subscript> interfaces

Optical second harmonic generation studies of the temperature dependence of the phase angle differences from contributions of terrace and edge bonding at silicon–silicon dioxide interfaces prepared on vicinal Si(111) wafers have revealed an interface relaxation process at an annealing temperature between 850 and 900 °C. Complementary studies by synchrotron soft X-ray photoelectron spectroscopy have established that this relaxation is associated with changes in the concentration and composition of local suboxide bonding environments in an ultrathin, interfacial transition region that is approximately one molecular layer thick. This relaxation occurs at a significantly lower temperature than an approximately 990±10 °C relaxation of macroscopic compressive strain in the bulk of the SiO₂ film. This paper establishes an analogy between i) the Si–SiO₂ interface in which there is a transition from a rigid substrate, Si, to an ideal continuous random covalent network, SiO₂, in which the average number of bonding constraints/atom matches the network dimensionality, and ii) a concentration dependent transition between under- and over-constrained local bonding in non-crystalline glass alloys such as Ge_xSe_1-x. The interfacial suboxide transition region is demonstrated to have properties in common with a regime of alloy compositions in which self-organization reduces bond constraint induced strain, thereby stabilizing these compositions against aging as for example in time-dependent changes in the glass transition temperature. These comparisons provide important new insights into defect formation at Si–SiO₂ interfaces, as well as interfaces between Si and alternative high-k dielectrics being considered for advanced Si devices including Al₂O₃ and transition metal silicate alloys, e.g., (ZrO₂)_x(SiO₂)_1-x. This new perspective is also extended to interfaces between GaN and SiO₂, where the interfacial transition region is a suboxide of Ga, GaO_x, with x<1.5. PACS 85.30.Tv; 42.65.-k; 79.40.+z; 73.20.-r; 77.55.+f     

Preparation and electrical properties of Bi<Subscript>3.25</Subscript>Pr<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric thin films

Bi_3.25Pr_0.75Ti₃O₁₂ (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600 °C rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90–100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700 °C annealed BPT films is around 20 C/cm² at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8×10⁹ cycles, while a 30% reduction of non-volatile polarization was observed. PACS 81.15.-z; 77.55.+f; 77.22.Gm     

Resonance-enhanced two-photon sum-frequency generation in NiO and KNiF<Subscript>3</Subscript>

Resonance-enhanced sum-frequency generation is introduced as a novel tool for investigation of magnetically ordered compounds. A tunable laser at frequency ₁ is used to excite an intermediate electronic transition resonantly while a second laser at frequency ₂ is used to scan the nonlinear spectrum at ₁+₂. The technique is particularly useful for investigation of centrosymmetric compounds since resonance enhancement at ₁ leads to large nonlinear signals even in the case of weakly allowed nonlinear processes. The technique is demonstrated on antiferromagnetic NiO and KNiF₃ and also shown to be useful for investigation of samples with large thickness or absorption. PACS 42.65.Ky; 78.20.Ls; 42.62.FiThis revised version was published in October 2004 with a correction to the name of Takuya Satoh.     

Continuous wave laser operation of Yb<Superscript>3+</Superscript>:YVO<Subscript>4</Subscript>

We have demonstrated the continuous wave laser operation of Yb³⁺:YVO₄. For Ti:Al₂O₃ laser pumping at 985 nm, a maximum slope efficiency of 41.1% and a threshold pump power of 76 mW were obtained. The maximum output power was 433 mW at a laser wavelength of 1037 nm.Using a cw diode laser around 974 nm as a pump source, a slope efficiency of 10.9% and a maximum output power of 152 mW were achieved at a laser wavelength of 1039 nm. The laser threshold pump power was 608 mW with respect to the absorbed pump power. The effective emission cross-sections for the ²F_5/2²F_7/2 transition were determined using the Füchtbauer–Ladenburg equation. The maxima of the effective absorption and emission cross-sections were found at 984.5 nm (6.74×10^-20 cm²) in -po larization and 985.5 nm (4.28×10^-20 cm²) also in -p olarization. The upper laser level lifetime was measured with suppression of radiation trapping and is around 318 s. PACS 42.55.Rz; 42.55.Xi; 42.70.Hj     

Interaction of running gratings of the space charge and conductivity in photorefractive Bi<Subscript>12</Subscript>Si(Ti)O<Subscript>20</Subscript> crystals

The simultaneous excitation and nonlinear interaction of the space-charge and photoconductivity gratings are studied experimentally in photorefractive Bi₁₂SiO₂₀ and Bi₁₂TiO₂₀. The measurements are performed using the diffraction technique, which implies the illumination of the crystal by an oscillating interference pattern (_r=532 nm) along with the application of dc and ac electric fields and detection of the diffracted probe beam (_p=650 nm). Such illumination excites the running photoconductivity grating, which interacts with the ac component of the applied field giving rise to the space-charge wave. Being the eigenmode of the space-charge oscillations, this wave reveals itself as a low-frequency resonant maximum at the frequency-transfer function of the detected signal. The drift mobilities of electrons are estimated using the developed technique: =(1.1–1.4)×10^-2 cm²/Vs (Bi₁₂SiO₂₀, T=296–298 K) and =2.8×10^-3 cm²/Vs (Bi₁₂TiO₂₀, T=293 K). PACS 42.65.Sf; 42.70.Nq     

Effects of thickness on the infrared optical properties of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films

Using infrared spectroscopic ellipsometry (IRSE), the optical properties of the Ba_0.9Sr_0.1TiO₃ (BST) ferroelectric thin films with different film thicknesses on Pt/Ti/SiO₂/Si substrates prepared by a modified sol-gel method have been investigated in the 2.5–12.6 m wavelength range. By fitting the measured ellipsometric parameter ( and ) data with a three-phase model (Air/BST/Pt) and the classical dispersion relation for the BST thin films, the optical constants and thicknesses of the thin films have been obtained. The average thickness of the single layer decreases with increasing film thickness. The refractive index of the BST films decreases with increasing thickness in the wavelength range 2.5–11 m, and increases with increasing thickness in the wavelength range 11–12.6 m. However, the extinction coefficient of the BST films monotonously decreases with increasing thickness. It is closely associated with the crystallinity of the thin films, the crystalline size effect and the influence of the interface layer. The absorption coefficient of the BST films with different thicknesses decreases with increasing thickness. PACS 77.55.+f; 78.20.Ci; 78.30.Am; 81.70.Fy; 81.40.Tv     

The random-phase-approximation in the weak coupling regime of the square lattice half-filled Hubbard model

We re-examine the random-phase approximation (RPA) in the antiferromagnetic spin-density-wave state of the half-filled square lattice repulsive Hubbard model. It is shown that forU/t1 the RPA yields a vanishing spinwave velocity, c(2t)^–1(U/t)^1/2, a diverging uniform transverse susceptibility, (2t)^–1(U/t ^–1/2, and a constant spin stiffness, _s 2t)^–2 t. The behavior of _s shows that the RPA cannot be correct in the weak coupling regime, because _s should vanish in the limitU/t0. We give a formally exact expression for _s and identify the term which is neglected within the RPA.     

Growth and characterization of a LaCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> crystal

The non-linear optical (NLO) crystal LaCa₄ O(BO₃)₃ (LaCOB ) has been grown by the Czochralski method. X-ray diffraction experiments show that LaCOB crystal possesses the space group Cm, and its unit cell constants have been measured to be a=0.8168(3) nm,b=1.6081(7) nm and c=0.3630(6) nm, with an angle =101.39°. The thermal properties of LaCOB have been studied; the specific heat of the crystal is 321.9 J/molK at 330 K, and the three principal coefficients of thermal expansion of the principal axes have been calculated from the measured data to be 5.61×10^-6 K^-1, 7.21×10^-6 K^-1 and 11.01×10^-6 K^-1, respectively. The transmission spectrum shows that LaCOB crystal has a wide transparency wavelength range, and may be used as a NLO crystal. PACS 81.10.Fq; 65.40.Ba; 65.40.De